JP6203503B2 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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JP6203503B2
JP6203503B2 JP2013029110A JP2013029110A JP6203503B2 JP 6203503 B2 JP6203503 B2 JP 6203503B2 JP 2013029110 A JP2013029110 A JP 2013029110A JP 2013029110 A JP2013029110 A JP 2013029110A JP 6203503 B2 JP6203503 B2 JP 6203503B2
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damming
light emitting
semiconductor light
sealing resin
narrow width
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JP2014157976A (en
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佳織 立花
佳織 立花
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Description

本発明は、半導体発光装置に関するものであり、詳しくは、基板上に実装された半導体発光素子を封止樹脂で樹脂封止してなる半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device in which a semiconductor light emitting element mounted on a substrate is sealed with a sealing resin.

従来、この種の半導体発光装置としては、例えば、図１２にあるような、基板８０上に形成された一対の回路パターン（電極）８１の夫々に架かるように半導体発光素子（ＬＥＤ素子）８２が実装され、半導体発光素子８２の周囲を囲むように線状に且つ環状に形成された堰き止め部（環状被膜）８３の内側に封止樹脂（封止部）８４をドーム状に充填することにより半導体発光素子８２を樹脂封止する構成からなるものが開示されている（特許文献１参照）。   Conventionally, as this type of semiconductor light-emitting device, for example, a semiconductor light-emitting element (LED element) 82 is provided so as to be placed on each of a pair of circuit patterns (electrodes) 81 formed on a substrate 80 as shown in FIG. A sealing resin (sealing portion) 84 is filled in a dome shape inside a damming portion (annular coating) 83 that is mounted and formed linearly and annularly so as to surround the periphery of the semiconductor light emitting element 82. A semiconductor light emitting device 82 having a structure in which resin sealing is performed is disclosed (see Patent Document 1).

この場合、封止樹脂８４は、半導体発光素子８２を水分、塵埃及び悪性ガス等の外部環境要因から保護して信頼性を確保する機能を有すると同時に、半導体発光素子８２の光出射面と界面を形成することにより半導体発光素子８２の発光部で発光した光を半導体発光素子８２の光出射面から封止樹脂８４内に効率良く出射させる機能も有している。   In this case, the sealing resin 84 has a function of protecting the semiconductor light emitting element 82 from external environmental factors such as moisture, dust, and malignant gas to ensure reliability, and at the same time, the light emitting surface and the interface of the semiconductor light emitting element 82. , The light emitted from the light emitting portion of the semiconductor light emitting element 82 is efficiently emitted from the light emitting surface of the semiconductor light emitting element 82 into the sealing resin 84.

特開２０１１−２５８８５１号公報JP2011-258851A

ところで、上記特許文献１のものは、半導体発光素子８２が点灯（発光）と消灯（非発光）を繰り返すことにより、半導体発光素子８２を封止した封止樹脂８４が該半導体発光素子８２の点灯時の発熱による熱膨張と消灯時の冷却による熱収縮を繰り返し、封止樹脂８４と堰き止め部８３の接する面（界面）において剥離（界面剥離）が生じることがある。   By the way, the thing of the said patent document 1 is that the semiconductor light-emitting element 82 encapsulates the semiconductor light-emitting element 82 by lighting (light-emitting) and light-extinguishing (non-light-emitting) repeatedly. Thermal expansion due to heat generation at the time and thermal contraction due to cooling at the time of extinction are repeated, and peeling (interface peeling) may occur on the surface (interface) where the sealing resin 84 and the damming portion 83 are in contact with each other.

その結果、光出力の低下、指向特性の劣化及び色度分布の悪化（封止樹脂８４に蛍光体を分散した場合）等の光学的特性不良、回路パターンに対する半導体発光素子８２の電極オープン等の電気的特性不良、水分や悪性ガス等の外部環境要因が半導体発光素子８２に到達することによる電気的リークや半導体発光素子８２の劣化等の信頼性不良及び見た目の外観不良などの不具合が生じる恐れがある。   As a result, optical characteristics such as a decrease in light output, a deterioration in directional characteristics, and a deterioration in chromaticity distribution (when phosphors are dispersed in the sealing resin 84), an electrode opening of the semiconductor light emitting element 82 with respect to the circuit pattern, etc. There is a risk that defects such as poor electrical characteristics, reliability due to external environmental factors such as moisture and malignant gas reaching the semiconductor light emitting device 82, poor reliability such as deterioration of the semiconductor light emitting device 82, and poor appearance. There is.

これは、堰き止め部８３と封止樹脂８４との接着性が乏しいことに起因するものである。   This is because the adhesiveness between the damming portion 83 and the sealing resin 84 is poor.

そこで、本発明は上記問題に鑑みて創案なされたもので、その目的とするところは、堰き止め部における封止樹脂のアンカー効果によって該堰き止め部と該封止樹脂との接着力を補強する構成とすることにより、光学的特性、電気的特性及び信頼性等の諸特性、及び外観の夫々が良好な半導体発光装置を実現することにある。   Therefore, the present invention was devised in view of the above problems, and its object is to reinforce the adhesive force between the damming portion and the sealing resin by the anchor effect of the sealing resin in the damming portion. By configuring the semiconductor light emitting device, a semiconductor light emitting device having excellent characteristics such as optical characteristics, electrical characteristics, reliability, and appearance can be realized.

上記課題を解決するために、本発明の請求項１に記載された発明は、半導体発光素子を実装するダイボンディングパッド部と、当該ダイボンディングパッド部と離間し、前記ダイボンディングパッド部の一辺に並んで形成した第１パッド部と、前記ダイボンディングパッド部の前記第１パッド部と反対側に形成した第２パッド部を導電部材により形成した基板と、前記基板上に実装された半導体発光素子と、前記基板表面であって前記半導体発光素子、前記ダイボンディングパッド部、前記第１パッド部及び前記第２パッド部の周囲を切れ目なく囲むように形成された第１堰き止め部と、前記第１堰き止め部に堰き止められて、前記半導体発光素子を封止する第１封止樹脂と、を有し、前記第１堰き止め部は、太幅部、細幅部、前記太幅部と前記細幅部との間の幅が変化する部分である遷移部とを含み、前記第１封止樹脂は前記第１堰き止め部の上面外側端部から外側面の延長方向に立ち上がる形状であり、前記遷移部は、前記第１パッド部もしくは前記第２パッド部の、前記第１パッド部、前記ダイボンディングパッド部及び前記第２パッド部が並んでいる方向と直交する方向側の側面の近くに位置し、前記並んでいる方向と前記第１堰き止め部とが交差する部分は前記細幅部が位置して前記第１封止樹脂が前記第１堰き止め部に対するアンカー効果を持つように作用することを特徴とするものである。 In order to solve the above-mentioned problem, the invention described in claim 1 of the present invention is characterized in that a die bonding pad part for mounting a semiconductor light emitting element and a die bonding pad part are spaced apart from each other and are formed on one side of the die bonding pad part. A substrate in which a first pad portion formed side by side, a second pad portion formed on a side opposite to the first pad portion of the die bonding pad portion is formed of a conductive member, and a semiconductor light emitting device mounted on the substrate A first damming portion formed on the substrate surface so as to surround the semiconductor light emitting element, the die bonding pad portion, the first pad portion, and the second pad portion without any breaks; A first sealing resin that is dammed by one damming portion and seals the semiconductor light emitting element, and the first damming portion includes a wide width portion, a narrow width portion, and the wide width portion. The first sealing resin has a shape that rises in the extending direction of the outer surface from the upper outer end of the first damming portion. The transition portion is near a side surface of the first pad portion or the second pad portion on the direction side perpendicular to the direction in which the first pad portion, the die bonding pad portion, and the second pad portion are arranged. The narrow portion is located at a portion where the line-up direction and the first damming portion intersect with each other so that the first sealing resin has an anchoring effect on the first damming portion. It is characterized by acting.

また、本発明の請求項２に記載された発明は、請求項１において、前記細幅部は前記第１堰き止め部の外周方向に凹んだ凹み部を形成しており、前記凹み部に前記半導体発光素子とは別の素子の少なくとも一部分が配置されていることを特徴とするものである。   Further, in the invention described in claim 2 of the present invention, in the first aspect, the narrow width portion forms a dent portion recessed in an outer peripheral direction of the first damming portion, and the dent portion includes the dent portion. At least a part of an element different from the semiconductor light emitting element is arranged.

また、本発明の請求項３に記載された発明は、請求項１において、前記第１堰き止め部の外側に該第１堰き止め部の周囲を切れ目なく囲むように設けられた、太幅部、細幅部、前記太幅部と前記細幅部との間の幅が変化する部分である遷移部とを含む第２堰き止め部と、前記２堰き止めに堰き止められて、前記第１堰き止め部及び前記第１封止樹脂を封止する第２封止樹脂と、を有し、前記第２堰き止め部の遷移部は、前記第２封止樹脂が前記第２堰き止め部に対するアンカー効果を持つように作用することを特徴とするものである。 Moreover, the invention described in claim 3 of the present invention is the thick portion according to claim 1 , which is provided outside the first damming portion so as to surround the first damming portion without any breaks. A second damming portion including a narrow width portion, a transition portion that is a portion in which a width between the wide width portion and the narrow width portion changes, and the first damming portion is dammed by the two damming portions, And a second sealing resin that seals the first sealing resin, and the transition portion of the second damming portion has the second sealing resin with respect to the second damming portion. It is characterized by acting to have an anchor effect .

また、本発明の請求項４に記載された発明は、請求項３において、前記第１堰き止め部の細幅部は、該第１堰き止め部の外周方向に凹んだ第１凹み部及び内周方向に凹んだ第２凹み部の２種類の凹み部を形成し、前記第２堰き止め部の細幅部は、該第２堰き止め部の外周方向に凹んだ凹み部を形成していることを特徴とするものである。 According to a fourth aspect of the present invention, in the third aspect , the narrow portion of the first damming portion includes a first dent portion and an inner portion recessed in the outer peripheral direction of the first damming portion. Two types of dent portions, a second dent portion recessed in the circumferential direction, are formed, and the narrow width portion of the second damming portion forms a dent portion recessed in the outer circumferential direction of the second damming portion. It is characterized by this.

また、本発明の請求項５に記載された発明は、請求項４において、前記第１堰き止め部の前記第１凹み部に、前記半導体発光素子とは別の素子の少なくとも一部分が配置されていることを特徴とするものである。 According to a fifth aspect of the present invention, in the fourth aspect, at least a part of an element different from the semiconductor light emitting element is disposed in the first recess of the first damming portion. it is characterized in that there.

また、本発明の請求項６に記載された発明は、半導体発光素子を実装するダイボンディングパッド部と、当該ダイボンディングパッド部と離間し、前記ダイボンディングパッド部の一辺に並んで形成した第１パッド部と、前記ダイボンディングパッド部の前記第１パッド部と反対側に形成した第２パッド部を導電部材により形成した基板と、前記基板上に実装された半導体発光素子と、前記基板表面であって前記半導体発光素子、前記ダイボンディングパッド部、前記第１パッド部及び前記第２パッド部の周囲を切れ目なく囲むように形成された第１堰き止め部と、前記第１堰き止め部に堰き止められて、前記半導体発光素子を封止する第１封止樹脂と、を有し、前記第１堰き止め部の外側に該第１堰き止め部の周囲を切れ目なく囲むように形成された、太幅部、細幅部、前記太幅部と前記細幅部との間の幅が変化する部分である遷移部とを含む第２堰き止め部と、前記第２堰き止め部に堰き止められて、前記第１堰き止め部及び前記第１封止樹脂を封止する第２封止樹脂と、を有し、前記第２封止樹脂は前記第２堰き止め部の上面外側端部から外側面の延長方向に立ち上がる形状であり、前記第２堰き止め部の遷移部は、前記第２封止樹脂が前記第２堰き止め部に対するアンカー効果を持つように作用することを特徴とするものである。 According to a sixth aspect of the present invention, there is provided a die bonding pad portion for mounting a semiconductor light emitting element, a first portion formed apart from the die bonding pad portion and arranged side by side on the die bonding pad portion. A pad portion; a substrate on which a second pad portion formed on the opposite side of the die bonding pad portion from the first pad portion is formed of a conductive member; a semiconductor light emitting device mounted on the substrate; and a surface of the substrate. A first damming portion formed so as to surround the semiconductor light emitting element, the die bonding pad portion, the first pad portion, and the second pad portion without a break; and a dam on the first damming portion. And a first sealing resin that seals the semiconductor light emitting device, and surrounds the first damming portion without any breaks outside the first damming portion. A second damming portion including a wide width portion, a narrow width portion, and a transition portion that is a portion in which a width between the wide width portion and the narrow width portion is changed, and the second damming portion And a second sealing resin that seals the first damming portion and the first sealing resin, and the second sealing resin is outside the upper surface of the second damming portion. It has a shape that rises from the end in the extending direction of the outer surface, and the transition portion of the second damming portion acts so that the second sealing resin has an anchoring effect on the second damming portion. It is what.

また、本発明の請求項７に記載された発明は、請求項６において、前記第１堰き止め部の細幅部は、該第１堰き止め部の外周方向に凹んだ第１凹み部及び内周方向に凹んだ第２凹み部の２種類の凹み部を形成し、前記第２堰き止め部の細幅部は、該第２堰き止め部の外周方向に凹んだ凹み部を形成していることを特徴とするものである。
また、本発明の請求項８に記載された発明は、請求項７において、前記第１堰き止め部の前記第１凹み部に、前記半導体発光素子とは別の素子の少なくとも一部分が配置されていることを特徴とするものである。
また、本発明の請求項９に記載された発明は、請求項４〜請求項６のいずれかにおいて、前記第１堰き止め部の上面まで前記第２封止樹脂が配置されていることを特徴とするものである。 According to a seventh aspect of the present invention, in the sixth aspect , the narrow width portion of the first damming portion includes a first dent portion and an inner portion recessed in the outer peripheral direction of the first damming portion. Two types of dent portions, a second dent portion recessed in the circumferential direction, are formed, and the narrow width portion of the second damming portion forms a dent portion recessed in the outer circumferential direction of the second damming portion. It is characterized by this.
According to an eighth aspect of the present invention, in the seventh aspect, at least a part of an element different from the semiconductor light emitting element is disposed in the first recess of the first damming portion. It is characterized by being.
Moreover, the invention described in claim 9 of the present invention is any one of claims 4 to 6, wherein the second sealing resin is arranged up to the upper surface of the first damming portion. It is what.

本発明の半導体発光装置は、基板上に実装された半導体発光素子の周囲を、同様に基板上に形成された、細幅部、太幅部、前記細幅部と前記太幅部との間の幅が変化する部分である遷移部を有する堰き止め部で囲み、堰き止め部で堰き止められた封止樹脂で半導体発光素子を樹脂封止した。これにより、遷移部が、封止樹脂が堰き止め部に対するアンカー効果を持つように機能する。   In the semiconductor light emitting device of the present invention, the periphery of the semiconductor light emitting element mounted on the substrate is similarly formed on the substrate between the narrow width portion, the wide width portion, and the narrow width portion and the wide width portion. The semiconductor light emitting device was resin-sealed with a sealing resin surrounded by a damming portion having a transition portion, which is a portion where the width of the semiconductor layer changes, and dammed by the damming portion. Thereby, a transition part functions so that sealing resin may have an anchor effect with respect to a damming part.

その結果、堰き止め部と封止樹脂との接着力が補強され、光学的特性、電気的特性及び信頼性等の諸特性、及び外観の夫々が良好な半導体発光装置が実現する。   As a result, the adhesive force between the damming portion and the sealing resin is reinforced, and a semiconductor light emitting device with excellent characteristics such as optical characteristics, electrical characteristics, reliability, and appearance is realized.

実施形態の半導体発光装置に係わる製造工程の説明図である。It is explanatory drawing of the manufacturing process concerning the semiconductor light-emitting device of embodiment. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 同じく、製造工程の説明図である。Similarly, it is explanatory drawing of a manufacturing process. 実施形態の説明図である。It is explanatory drawing of embodiment. 応用例の説明図である。It is explanatory drawing of an application example. 他の応用例の平面説明図である。It is a plane explanatory view of other application examples. 図７のＧ−Ｇ断面説明図である。It is GG cross-section explanatory drawing of FIG. 図７及び図８に係わる斜視説明図である。It is a perspective explanatory view concerning FIG.7 and FIG.8. 遷移部の説明図である。It is explanatory drawing of a transition part. 同じく、遷移部の説明図である。Similarly, it is explanatory drawing of a transition part. 従来例の説明図である。It is explanatory drawing of a prior art example.

以下、この発明の好適な実施形態を図１〜図１１を参照しながら、詳細に説明する（同一部分については同じ符号を付す）。尚、以下に述べる実施形態は、本発明の好適な具体例であるから、技術的に好ましい種々の限定が付されているが、本発明の範囲は、以下の説明において特に本発明を限定する旨の記載がない限り、これらの実施形態に限られるものではない。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 11 (the same parts are given the same reference numerals). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

まず、本発明の半導体発光装置に係わる実施形態について、製造方法を図１〜図４を参照して以下に説明する。   First, a manufacturing method according to an embodiment of the semiconductor light emitting device of the present invention will be described below with reference to FIGS.

最初に、図１（ａ：平面図、ｂ：ａのＡ−Ａ断面図）のような基板１を用意する。基板１は絶縁材料あるいは金属材料からなり、絶縁材料の場合はガラスエポキシ、ポリイミド、液晶ポリマー又はセラミック等の材料が用いられ、金属材料の場合は鉄、アルミニウム又は銅等の材料が用いられる。   First, a substrate 1 as shown in FIG. 1 (a: plan view, b: a cross-sectional view taken along line AA) is prepared. The substrate 1 is made of an insulating material or a metal material. In the case of an insulating material, a material such as glass epoxy, polyimide, liquid crystal polymer, or ceramic is used. In the case of a metal material, a material such as iron, aluminum, or copper is used.

基板１の表面１ａ上及び裏面１ｂ上には導電部材からなる回路パターン２が形成され、表面１ａ上の回路パターン２には部分的に、後述する半導体発光素子３をダイボンディングするダイボンディングパッド２ａとボンディングワイヤ４をワイヤボンディングするワイヤボンディングパッド２ｂが形成されている。また、裏面１ｂ上の回路パターン２には外部の電源部に接続して電力を受電する外部接続電極２ｃが形成されている。回路パターン２は、基板１が絶縁基板の場合は直接基板表面上に設けられるが、基板１が金属基板の場合は基板表面上に形成された絶縁層を介して設けられる。   A circuit pattern 2 made of a conductive member is formed on the front surface 1a and the back surface 1b of the substrate 1, and the circuit pattern 2 on the front surface 1a is partially bonded to a die bonding pad 2a for die-bonding a semiconductor light emitting element 3 to be described later. Wire bonding pads 2b for bonding the bonding wires 4 to each other are formed. The circuit pattern 2 on the back surface 1b is formed with an external connection electrode 2c that is connected to an external power supply unit and receives power. The circuit pattern 2 is provided directly on the substrate surface when the substrate 1 is an insulating substrate, but is provided via an insulating layer formed on the substrate surface when the substrate 1 is a metal substrate.

次に、図２（ａ：平面図、ｂ：ａのＢ−Ｂ断面図）のように、基板１の表面１ａ上に、ダイボンディングパッド２ａ及びワイヤボンディングパッド２ｂの周囲を切れ目なく囲むように所定の高さで環状に延びる線状の堰き止め部５を形成する。   Next, as shown in FIG. 2 (a: plan view, b: BB sectional view of a), the periphery of the die bonding pad 2a and the wire bonding pad 2b is surrounded on the surface 1a of the substrate 1 without a break. A linear damming portion 5 extending in a ring shape at a predetermined height is formed.

堰き止め部５は、レジストインキをスクリーン印刷して形成したレジスト層又は金属材料のメッキにより形成した金属層で構成され、幅の細い細幅部５ａの領域、幅の太い太幅部５ｂの領域及び細幅部５ａと太幅部５ｂとの間の幅が変化する部分である遷移部５ｃの領域で構成されている。そのうち、細幅部５ａと太幅部５ｂの夫々は、基板１を表面１ａ側上方から見た上方視において、互いに平行に延長された外周線６と内周線７で形成されると共に、外周線６と、内周線７の前記外周線６に対して接近した線分７ａと離反した線分７ｂとにより設定される。また、遷移部５ｃは、接近した線分７ａに対向する線（本実施例においては外周線６）に対して略垂線方向に延びる線分７ｃで形成されている。   The damming portion 5 is composed of a resist layer formed by screen printing of resist ink or a metal layer formed by plating of a metal material, and a narrow narrow portion 5a region and a wide wide portion 5b region. And a region of a transition portion 5c, which is a portion where the width between the narrow width portion 5a and the wide width portion 5b changes. Among them, each of the narrow width portion 5a and the wide width portion 5b is formed by an outer peripheral line 6 and an inner peripheral line 7 that extend in parallel with each other when the substrate 1 is viewed from above the surface 1a side. It is set by the line 6, the line segment 7 a that is closer to the outer peripheral line 6 of the inner peripheral line 7, and the line segment 7 b that is separated from the outer peripheral line 6. Moreover, the transition part 5c is formed with the line segment 7c extended in a substantially perpendicular direction with respect to the line (an outer periphery line 6 in a present Example) which opposes the approached line segment 7a.

堰き止め部５は、細幅部５ａ及び太幅部５ｂの夫々の幅及び厚みは任意であるが、細幅部５ａと太幅部５ｂの幅の比率は、（１／２）〜（２／３）：１であることが好ましい。細幅部５ａと太幅部５ｂの幅の差が大きいと、後述する封止樹脂１０との界面の面積（特に、上面５ｆにおける接触面積）の差が大きくなって接着強度に強度差が生じ、封止樹脂１０に対して接着強度が相対的に弱い細幅部５ａで封止樹脂１０の剥離が発生する。一方、細幅部５ａと太幅部５ｂの幅の差が小さいと、後述する封止樹脂１０のアンカー効果が低減して堰き止め部５に細幅部５ａと太幅部５ｂを設ける意味が薄れるか、あるいは意味が無くなる。   The damming portion 5 has an arbitrary width and thickness of the narrow width portion 5a and the wide width portion 5b, but the ratio of the width of the narrow width portion 5a to the wide width portion 5b is (1/2) to (2 / 3): 1 is preferable. If the width difference between the narrow width portion 5a and the wide width portion 5b is large, the difference in the area of the interface with the sealing resin 10 described later (particularly, the contact area on the upper surface 5f) increases, resulting in a difference in strength in the adhesive strength. The peeling of the sealing resin 10 occurs at the narrow width portion 5a having relatively weak adhesive strength with respect to the sealing resin 10. On the other hand, if the difference in width between the narrow width portion 5a and the wide width portion 5b is small, the anchor effect of the sealing resin 10 described later is reduced, and the meaning that the narrow width portion 5a and the wide width portion 5b are provided in the damming portion 5 is meant. Fade or lose meaning.

換言すると、堰き止め部５で囲まれた領域（ボンディング領域）８は、堰き止め部５の細幅部５ａにおいて外周線６側に拡張された拡張部８ａを有している。   In other words, the region (bonding region) 8 surrounded by the damming portion 5 has an expanded portion 8 a that is expanded toward the outer peripheral line 6 in the narrow width portion 5 a of the damming portion 5.

次に、図３（ａ：平面図、ｂ：ａのＣ−Ｃ断面図）のように、基板１のダイボンディングパッド２ａ上にダイボンディング材（接着剤）９を介して半導体発光素子３をダイボンディングし、半導体発光素子３の上面に位置する一対の電極３ａの夫々と一対のワイヤボンディングパッド２ｂの夫々とにボンディングワイヤ４をワイヤボンディングすることにより、半導体発光素子３の上面に位置する電極３ａとワイヤボンディングパッド２ｂとをボンディングワイヤ４を介して電気的に接続する。   Next, as shown in FIG. 3 (a: plan view, b: a CC cross-sectional view), the semiconductor light emitting element 3 is placed on the die bonding pad 2a of the substrate 1 via a die bonding material (adhesive) 9. Electrodes located on the upper surface of the semiconductor light emitting element 3 are bonded by die bonding and wire-bonding the bonding wires 4 to each of the pair of electrodes 3a located on the upper surface of the semiconductor light emitting element 3 and each of the pair of wire bonding pads 2b. 3 a and the wire bonding pad 2 b are electrically connected through the bonding wire 4.

最後に、図４（ａ：平面図、ｂ：ａのＤ−Ｄ断面図）に示すように、堰き止め部５の上面にかかるように、封止樹脂１０を該堰き止め部５内に充填して、半導体発光素子３及びボンディングワイヤ４を樹脂封止する。この場合、封止樹脂１０の充填はディスペンサ（液体定量吐出装置）を用いて一定量に設定され、充填された封止樹脂１０は、表面張力によって堰き止め部５の上面外側端部５ｄで広がりが抑えられると同時に、同様に表面張力によって堰き止め部５の上面外側端部５ｄから該堰き止め部５の外側面５ｅの延長方向に立ち上がるドーム状に形成される。   Finally, as shown in FIG. 4 (a: plan view, b: DD cross-sectional view of a), the sealing resin 10 is filled into the damming portion 5 so as to cover the upper surface of the damming portion 5. Then, the semiconductor light emitting element 3 and the bonding wire 4 are sealed with resin. In this case, the filling of the sealing resin 10 is set to a constant amount using a dispenser (liquid metering discharge device), and the filled sealing resin 10 spreads at the upper outer end 5d of the damming portion 5 due to surface tension. At the same time, it is formed in a dome shape that rises from the upper surface outer end portion 5d of the damming portion 5 in the extending direction of the outer surface 5e of the damming portion 5 by surface tension.

封止樹脂１０は、半導体発光素子３を水分、塵埃及び悪性ガス等の外部環境要因から保護し且つボンディングワイヤ４を振動及び衝撃等の機械的応力から保護して信頼性を確保する機能を有している。また、半導体発光素子３の光出射面と界面を形成することにより半導体発光素子３の発光部で発光した光を半導体発光素子３の光出射面３ｂから封止樹脂１０内に効率良く出射させる機能も有している。   The sealing resin 10 has a function of ensuring reliability by protecting the semiconductor light emitting element 3 from external environmental factors such as moisture, dust and malignant gas, and protecting the bonding wire 4 from mechanical stresses such as vibration and impact. doing. The function of efficiently emitting light emitted from the light emitting portion of the semiconductor light emitting element 3 into the sealing resin 10 from the light emitting surface 3 b of the semiconductor light emitting element 3 by forming an interface with the light emitting surface of the semiconductor light emitting element 3. Also have.

以上により、半導体発光装置の一連の製造工程が終了する。なお、上記製造工程においても説明しているので重複することもあるが、改めて半導体発光装置２０の構成について以下に図５（ａ：平面図、ｂ：ａのＥ−Ｅ断面図）を参照して説明する。   Thus, a series of manufacturing steps of the semiconductor light emitting device is completed. Although the manufacturing process has been described, it may be duplicated, but the structure of the semiconductor light emitting device 20 will be referred to below again with reference to FIG. 5 (a: plan view, b: a sectional view taken along line EE). I will explain.

半導体発光装置２０は、基板１の表面１ａ上及び裏面１ｂに回路パターン２が形成されており、そのうち、表面１ａ上にはダイボンディングパッド２ａ及び一対のワイヤボンディングパッド２ｂが形成されている。一方、裏面１ｂ上には外部の電源部に接続して電力を受電する外部接続電極２ｃが形成されている。   In the semiconductor light emitting device 20, the circuit pattern 2 is formed on the front surface 1a and the back surface 1b of the substrate 1, and among them, the die bonding pad 2a and the pair of wire bonding pads 2b are formed on the front surface 1a. On the other hand, an external connection electrode 2c that is connected to an external power supply unit and receives power is formed on the back surface 1b.

ダイボンディングパッド２ａ上には、ダイボンディング材（接着剤）９を介して半導体発光素子３がダイボンディングされると共に、半導体発光素子３の上面に位置する一対の電極３ａの夫々と一対のワイヤボンディングパッド２ｂの夫々とにボンディングワイヤ４をワイヤボンディングすることにより、半導体発光素子３の上面に位置する電極３ａとワイヤボンディングパッド２ｂとがボンディングワイヤ４を介して電気的に接続されている。   On the die bonding pad 2a, the semiconductor light emitting element 3 is die bonded via a die bonding material (adhesive) 9, and each of the pair of electrodes 3a located on the upper surface of the semiconductor light emitting element 3 and a pair of wire bonding. By bonding the bonding wire 4 to each of the pads 2 b, the electrode 3 a located on the upper surface of the semiconductor light emitting element 3 and the wire bonding pad 2 b are electrically connected via the bonding wire 4.

また、同様に基板１の表面１ａ上には、半導体発光素子３及びボンディングワイヤ４の周囲を切れ目なく囲むように所定の高さで環状に延びる線状の堰き止め部５が形成されており、幅の細い細幅部５ａの領域、幅の太い太幅部５ｂの領域及び細幅部５ａと太幅部５ｂとの間の幅が変化する部分である遷移部５ｃの領域で構成されており、そのうち、細幅部５ａと太幅部５ｂの夫々は、基板１を表面１ａ側上方から見た上方視において、互いに平行に延長された外周線６と内周線７で形成されると共に、外周線６と、内周線７の前記外周線６に対して接近した線分７ａと離反した線分７ｂとにより設定されている。また、遷移部５ｃは、接近した線分７ａに対向する線（本実施例においては外周線６）に対して略垂線方向に延びる線分７ｃで形成されている。   Similarly, on the surface 1a of the substrate 1, there is formed a linear damming portion 5 extending annularly at a predetermined height so as to surround the periphery of the semiconductor light emitting element 3 and the bonding wire 4 without interruption. It is composed of a narrow narrow portion 5a region, a thick wide portion 5b region, and a transition portion 5c region where the width changes between the narrow width portion 5a and the wide width portion 5b. Of these, each of the narrow width portion 5a and the wide width portion 5b is formed of an outer peripheral line 6 and an inner peripheral line 7 that extend in parallel with each other when the substrate 1 is viewed from above the surface 1a side, and It is set by the outer peripheral line 6, and the line segment 7a which approached the said outer peripheral line 6 of the inner peripheral line 7, and the separated line segment 7b. Moreover, the transition part 5c is formed with the line segment 7c extended in a substantially perpendicular direction with respect to the line (an outer periphery line 6 in a present Example) which opposes the approached line segment 7a.

堰き止め部５は、細幅部５ａ及び太幅部５ｂの夫々の幅及び厚みは任意であるが、細幅部５ａと太幅部５ｂの幅の比率は、（１／２）〜（２／３）：１であることが好ましい。細幅部５ａと太幅部５ｂの幅の差が大きいと、封止樹脂１０との界面の面積（接触面積）の差が大きくなって接着強度に強度差が生じ、封止樹脂１０に対して接着強度が相対的に弱い細幅部５ａで封止樹脂１０の剥離が発生する。一方、細幅部５ａと太幅部５ｂの幅の差が小さいと、封止樹脂１０のアンカー効果が低減し、堰き止め部５に細幅部５ａと太幅部５ｂを設ける意味が薄れるか、あるいは意味が無くなる。   The damming portion 5 has an arbitrary width and thickness of the narrow width portion 5a and the wide width portion 5b, but the ratio of the width of the narrow width portion 5a to the wide width portion 5b is (1/2) to (2 / 3): 1 is preferable. If the width difference between the narrow width portion 5a and the wide width portion 5b is large, the difference in the area (contact area) of the interface with the sealing resin 10 increases, resulting in a difference in strength in the adhesive strength. Therefore, the sealing resin 10 is peeled off at the narrow width portion 5a having relatively low adhesive strength. On the other hand, if the difference in width between the narrow width portion 5a and the wide width portion 5b is small, the anchor effect of the sealing resin 10 is reduced, and the meaning of providing the narrow width portion 5a and the wide width portion 5b in the damming portion 5 is diminished. Or the meaning is lost.

したがって、堰き止め部５で囲まれた領域８は、堰き止め部５の細幅部５ａにおいて外周線６側に拡張された拡張部８ａを有している。   Therefore, the region 8 surrounded by the damming portion 5 has an expanded portion 8 a that is expanded toward the outer peripheral line 6 in the narrow width portion 5 a of the damming portion 5.

更に、堰き止め部５の上面にかかるように、封止樹脂１０が該堰き止め部５の内側に該堰き止め部５で堰き止めした状態に充填されて、半導体発光素子３及びボンディングワイヤ４が樹脂封止されている。充填された封止樹脂１０は、表面張力によって堰き止め部５の上面外側端部５ｄで広がりが抑えられると同時に、同様に表面張力によって堰き止め部５の上面外側端部５ｄから該堰き止め部５の外側面５ｅの延長方向に立ち上がるドーム状に形成されている。   Further, the sealing resin 10 is filled inside the damming portion 5 in a state of being dammed by the damming portion 5 so as to cover the upper surface of the damming portion 5, so that the semiconductor light emitting element 3 and the bonding wire 4 are formed. Resin-sealed. The filled sealing resin 10 is suppressed from spreading at the upper surface outer end portion 5d of the damming portion 5 by the surface tension, and at the same time, similarly from the upper surface outer end portion 5d of the damming portion 5 by the surface tension. 5 is formed in a dome shape that rises in the extending direction of the outer surface 5e.

半導体発光装置をこのような構成にすることにより、封止樹脂１０の一部が、堰き止め部５で囲まれた領域８の、堰き止め部５の細幅部５ａにおいて外周線６側に拡張された拡張部８ａに入り込み、拡張部８ａに入り込んだ封止樹脂１０に堰き止め部５の細幅部５ａの内側面によるアンカー効果が生じて拡張部８ａに固定される。   With this configuration of the semiconductor light emitting device, a part of the sealing resin 10 is expanded toward the outer peripheral line 6 in the narrow width portion 5a of the damming portion 5 in the region 8 surrounded by the damming portion 5. An anchor effect is generated by the inner surface of the narrow width portion 5a of the damming portion 5 in the sealing resin 10 that has entered the expanded portion 8a, and is fixed to the expanded portion 8a.

そのため、堰き止め部５（特に、堰き止め部５の上面）と封止樹脂１０の接する界面において、半導体発光素子３の点灯時の発熱による熱膨張及び消灯時の冷却による熱収縮の繰り返しに起因する熱応力が抑制されて堰き止め部と封止樹脂との接着性が補強されることになり、これにより界面剥離が防止される。   Therefore, at the interface where the damming portion 5 (in particular, the upper surface of the damming portion 5) and the sealing resin 10 are in contact, the thermal expansion due to heat generation during the lighting of the semiconductor light emitting element 3 and the thermal contraction due to cooling during the extinction are caused. The thermal stress is suppressed and the adhesion between the damming portion and the sealing resin is reinforced, thereby preventing interfacial peeling.

その結果、光学的特性、電気的特性及び信頼性等の諸特性、及び外観の夫々が良好な半導体発光装置を実現することができる。   As a result, it is possible to realize a semiconductor light emitting device that has excellent characteristics such as optical characteristics, electrical characteristics, reliability, and appearance.

また、堰き止め部５で囲まれた領域８の拡張部８ａに、ダイボンディングパッド２ａや本実施形態のようにワイヤボンディングパッド２ｂの夫々の一部を配設することによりその上面に半導体発光素子３やボンディングワイヤ４等の部品・部材を実装することができると共に、拡散部８ａを、製造工程の製造装置に係わる部品（半導体発光素子３）搭載用のコレットやワイヤボンディング用のキャピラリ等の工程ツールのワークエリヤとして活用することができる。   Further, by disposing a part of each of the die bonding pad 2a and the wire bonding pad 2b as in the present embodiment in the extended portion 8a of the region 8 surrounded by the damming portion 5, the semiconductor light emitting element is formed on the upper surface thereof. 3 and a bonding wire 4 and other components / members can be mounted, and the diffusion portion 8a can be used for a process such as a collet for mounting a component (semiconductor light emitting element 3) related to a manufacturing apparatus in a manufacturing process or a capillary for wire bonding. It can be used as a tool work area.

そのため、製造工程上の制約が低減して設計の自由度が高まると共に、それに伴って半導体発光装置の小型化が実現できる。   Therefore, restrictions on the manufacturing process are reduced and the degree of freedom of design is increased, and accordingly, the semiconductor light emitting device can be downsized.

なお、上記実施形態においては、環状に設けられた堰き止め部５で囲まれた内側の領域８内に半導体発光素子３とボンディングワイヤ４を有するものであるが、半導体発光装置はこれに限られるものではなく、半導体発光素子３と半導体発光素子３以外の素子とを組み合わせて配置することも可能である。   In the above embodiment, the semiconductor light emitting element 3 and the bonding wire 4 are provided in the inner region 8 surrounded by the damming portion 5 provided in a ring shape, but the semiconductor light emitting device is limited to this. The semiconductor light emitting element 3 and an element other than the semiconductor light emitting element 3 may be combined and arranged.

例えば、図６（ａ：平面図、ｂ：ａのＦ−Ｆ断面図）にあるように、基板１の表面１ａ上の、堰き止め部５で囲まれた内側の領域８内に、ダイボンディングパッド２ａにダイボンディング材９を介してダイボンディングされた半導体発光素子３と共に、例えばツェナーダイオード素子３０を接着剤３１を介して載置する。そして、ツェナーダイオード素子３０の上面に位置する一対の電極３０ａの夫々と一対のワイヤボンディングパッド２ｂの夫々とにボンディングワイヤ４をワイヤボンディングすることにより、ツェナーダイオード素子３０の上面に位置する電極３０ａとワイヤボンディングパッド２ｂとをボンディングワイヤ４を介して電気的に接続する。   For example, as shown in FIG. 6 (a: plan view, b: cross section of FF in FIG. 6a), die bonding is performed in the inner region 8 surrounded by the damming portion 5 on the surface 1a of the substrate 1. For example, a Zener diode element 30 is mounted via an adhesive 31 together with the semiconductor light emitting element 3 die-bonded to the pad 2 a via the die bonding material 9. Then, by bonding the bonding wire 4 to each of the pair of electrodes 30a located on the upper surface of the Zener diode element 30 and each of the pair of wire bonding pads 2b, the electrode 30a located on the upper surface of the Zener diode element 30 and The wire bonding pad 2 b is electrically connected through the bonding wire 4.

この場合、堰き止め部５は、ツェナーダイオード素子３０に対応する位置をワイヤボンディングパッド２ｂに対応する位置と同様に細幅部５ａで構成し、ツェナーダイオード素子３０がワイヤボンディングパッド２ｂと同様にその一部が堰き止め部５で囲まれた領域８の拡張部８ａに位置するように配置されている。   In this case, the damming portion 5 is configured by the narrow width portion 5a in the same manner as the position corresponding to the wire bonding pad 2b at the position corresponding to the Zener diode element 30, and the Zener diode element 30 is formed in the same manner as the wire bonding pad 2b. It arrange | positions so that a part may be located in the expansion part 8a of the area | region 8 enclosed by the damming part 5. FIG.

その結果、半導体発光素子と半導体発光素子以外の素子とを組み合わせて搭載した半導体発光装置の小型化を実現することができる。この場合も、堰き止め部５を、細幅部５ａの領域、太幅部５ｂの領域及び遷移部５ｃの領域で構成することにより、拡張部８ａに入り込んだ封止樹脂１０によるアンカー効果によって、半導体発光素子３の点灯時の発熱による熱膨張及び消灯時の冷却による熱収縮の繰り返しに起因する熱応力が抑制されて堰き止め部と封止樹脂との界面における接着性が補強されることになり、これにより界面剥離が防止される。   As a result, it is possible to reduce the size of a semiconductor light emitting device in which a semiconductor light emitting element and an element other than the semiconductor light emitting element are mounted in combination. Also in this case, by configuring the damming portion 5 in the region of the narrow width portion 5a, the region of the thick width portion 5b, and the region of the transition portion 5c, by the anchor effect by the sealing resin 10 that has entered the expanded portion 8a, Thermal stress caused by repeated thermal expansion due to heat generation during lighting of the semiconductor light emitting element 3 and thermal contraction due to cooling during light extinction is suppressed, and adhesion at the interface between the damming portion and the sealing resin is reinforced. This prevents interfacial delamination.

また、半導体発光素子３のみを実装した上記半導体発光装置２０に対して更に、堰き止め部５で囲まれた領域８の拡張部８ａにツェナーダイオード素子３０の一部が位置した状態で実装することができると共に、拡散部８ａを、製造工程の製造装置に係わる部品（半導体発光素子３及びツェナーダイオード素子３０）搭載用のコレットやワイヤボンディング用のキャピラリ等の工程ツールのワークエリヤとして活用することができる。   Further, the semiconductor light emitting device 20 in which only the semiconductor light emitting element 3 is mounted is further mounted in a state where a part of the Zener diode element 30 is located in the extended portion 8 a of the region 8 surrounded by the damming portion 5. In addition, the diffusion portion 8a can be used as a work area for a process tool such as a collet for mounting parts (semiconductor light emitting element 3 and Zener diode element 30) related to a manufacturing apparatus in a manufacturing process or a capillary for wire bonding. it can.

そのため、製造工程上の制約が低減して設計の自由度が高まると共に、それに伴って半導体発光装置の小型化が実現できる。   Therefore, restrictions on the manufacturing process are reduced and the degree of freedom of design is increased, and accordingly, the semiconductor light emitting device can be downsized.

図７〜図９（図７は平面図、図８は図７のＧ−Ｇ断面図、図９は斜視図）に示す半導体発光装置７０は、環状の堰き止め部を二重に設け、内側に設けられた堰き止め部で囲まれた内側の領域に半導体発光素子を実装すると共に内側の堰き止め部で堰き止められた封止樹脂で半導体発光素子を樹脂封止し、更にその上を外側の堰き止め部で堰き止められた封止樹脂で二重に樹脂封止した構成を有すものである。以下に具体的に説明する。   The semiconductor light emitting device 70 shown in FIGS. 7 to 9 (FIG. 7 is a plan view, FIG. 8 is a cross-sectional view taken along the line GG in FIG. 7, and FIG. 9 is a perspective view) The semiconductor light emitting device is mounted on the inner region surrounded by the damming portion provided on the inner side, and the semiconductor light emitting device is resin-sealed with the sealing resin dammed by the inner damming portion, and further on the outer side It has the structure which double-resin-sealed with the sealing resin dammed up by this damming part. This will be specifically described below.

基板４１の表面４１ａ上及び裏面４１ｂに回路パターン４２が形成されており、そのうち、表面４１ａ上にはフリップチップ実装型の半導体発光素子４３が実装される一対の電極パッド４２ａが形成されており、裏面４１ｂ上には外部の電源部に接続して電力を受電する外部接続電極４２ｂが形成されている。   A circuit pattern 42 is formed on the front surface 41a and the back surface 41b of the substrate 41, and a pair of electrode pads 42a on which the flip-chip mounting type semiconductor light emitting element 43 is mounted is formed on the front surface 41a. An external connection electrode 42b that is connected to an external power supply unit and receives power is formed on the back surface 41b.

一対の電極パッド４２ａ上には、バンプ５８を介して半導体発光素子４３が実装されて、半導体発光素子４３の下面に位置する電極（図示せず）と電極パッド４２ａとがバンプ５８を介して電気的に接続されている。   The semiconductor light emitting device 43 is mounted on the pair of electrode pads 42 a via the bumps 58, and an electrode (not shown) located on the lower surface of the semiconductor light emitting device 43 and the electrode pads 42 a are electrically connected via the bumps 58. Connected.

同様に、基板４１の表面４１ａ上には、半導体発光素子４３の周囲を切れ目なく囲むように所定の高さで環状に延びる線状の第１の堰き止め部（以下、「第１堰き止め部」と呼称する）４４が形成され、その外側に第１堰き止め部４４の周囲を切れ目なく囲むように所定の高さで環状に延びる線状の第２の堰き止め部（以下、「第２堰き止め部」と呼称する）５４が形成されている。   Similarly, on the surface 41 a of the substrate 41, a linear first damming portion (hereinafter referred to as “first damming portion”) extending annularly at a predetermined height so as to surround the periphery of the semiconductor light emitting element 43 without a break. ”44, and a linear second damming portion (hereinafter referred to as“ second ”) that extends in a ring shape at a predetermined height so as to surround the first damming portion 44 without any breaks. 54) (referred to as a “damming portion”).

第１堰き止め部４４は、幅の細い細幅部４４ａの領域、幅の太い太幅部４４ｂの領域及び細幅部４４ａと太幅部４４ｂとの間の幅が変化する部分である遷移部４４ｃの領域で構成されており、そのうち、細幅部４４ａと太幅部４４ｂの夫々は、基板４１を表面４１ａ側上方から見た上方視において、互いに平行に延長された外周線４５と内周線４６で形成されている。   The first damming portion 44 is a transition portion that is a narrow width portion 44a region, a thick wide portion 44b region, and a portion where the width between the narrow width portion 44a and the wide width portion 44b changes. 44c, of which the narrow portion 44a and the wide portion 44b each have an outer peripheral line 45 and an inner periphery extending in parallel with each other when the substrate 41 is viewed from above the surface 41a. It is formed by a line 46.

太幅部４４ｂに対して細幅部４４ａは上方視において、内周線４６の、外周線４５に対して接近した線分４６ａにより設定される第１の細幅部（以下、「第１細幅部」と呼称する）４４ａａと、外周線４５の、内周線４６に対して接近した線分４５ａにより設定される第２の細幅部（以下、「第２細幅部」と呼称する）４４ａｂを有している。また、遷移部４４ｃは、第１細幅部４４ａａにおいては接近した線分４６ａに対向する外周線４５に対して略垂線方向に延び、第２細線部においては接近した線分４５ａに対向する内周線４６に対して略垂線方向に延びる線分４９で形成されている。   The narrow portion 44a is a first narrow portion (hereinafter referred to as "first narrow portion") set by a line segment 46a of the inner peripheral line 46 that is closer to the outer peripheral line 45 when viewed from above. 44aa and a second narrow portion (hereinafter referred to as "second narrow portion") set by the line segment 45a of the outer peripheral line 45 close to the inner peripheral line 46. ) 44ab. The transition portion 44c extends in a direction substantially perpendicular to the outer peripheral line 45 facing the line segment 46a approached in the first narrow width portion 44aa, and is opposed to the line segment 45a approached in the second thin line portion. It is formed by a line segment 49 extending in a direction substantially perpendicular to the peripheral line 46.

したがって、第１堰き止め部４４で囲まれた領域（ボンディング領域）４７は、第１堰き止め部４４の第１細幅部４４ａａにおいて外周線４５側に拡張された第１の拡張部（以下、「第１拡張部」と呼称する）４７ａを有している。同時に、第１堰き止め部４４の外側の、第２堰き止め部５４との間の領域（外側領域）４８は、第１堰き止め部４４の第２細幅部４４ａｂにおいて内周線４６側に拡張された第２の拡張部（以下、「第２拡張部」と呼称する）４８ａを有している。   Therefore, a region (bonding region) 47 surrounded by the first damming portion 44 is a first expansion portion (hereinafter, referred to as an outer peripheral line 45 side) of the first narrow portion 44aa of the first damming portion 44. 47a) (referred to as "first extension"). At the same time, the region (outer region) 48 between the first damming portion 44 and the second damming portion 54 is located on the inner circumferential line 46 side in the second narrow width portion 44ab of the first damming portion 44. An extended second extension part (hereinafter referred to as “second extension part”) 48 a is provided.

更に、第１の封止樹脂（以下、「第１封止樹脂」と呼称する）５０が、第１堰き止め部４４の内側面４４ｄで堰き止められた状態で該第１堰き止め部４４の内側に充填されて、半導体発光素子４３が樹脂封止されている。充填された第１封止樹脂５０は、表面張力によって第１堰き止め部４４の上面内側端部４４ｆで広がりが抑えられると同時に、同様に表面張力によって第１堰き止め部５の上面内側端部４４ｆから該１堰き止め部４４の内側面４４ｄの延長方向に立ち上がるドーム状に形成されている。   Furthermore, the first sealing resin (hereinafter referred to as “first sealing resin”) 50 is blocked by the inner surface 44 d of the first damming portion 44. Filled inside, the semiconductor light emitting element 43 is resin-sealed. The filled first sealing resin 50 is suppressed from spreading at the upper surface inner end portion 44f of the first damming portion 44 by the surface tension, and at the same time, similarly, the upper surface inner end portion of the first damming portion 5 by the surface tension. It is formed in a dome shape that rises from 44 f in the extending direction of the inner surface 44 d of the one damming portion 44.

第１堰き止め部４４の外側に設けられた第２堰き止め部５４は、幅の細い細幅部５４ａの領域、幅の太い太幅部５４ｂの領域及び細幅部５４ａと太幅部５４ｂとの間の幅が変化する部分である遷移部５４ｃの領域で構成されており、そのうち、細幅部５４ａと太幅部５４ｂの夫々は、基板４１を表面４１ａ側上方から見た上方視において、互いに平行に延長された外周線５５と内周線５６で形成されると共に、外周線５５と、内周線５６の前記外周線５５に対して接近した線分５６ａと離反した線分５６ｂとにより設定されている。また、遷移部５４ｃは、接近した線分５６ａに対向する外周線５５に対して略垂線方向に延びる線分５６ｃで形成されている。   The second damming portion 54 provided outside the first damming portion 44 includes a narrow narrow width portion 54a region, a wide wide width portion 54b region, and a narrow width portion 54a and a wide width portion 54b. Of the transition portion 54c, which is a portion where the width between the narrow portion 54a and the wide width portion 54b is viewed from above when the substrate 41 is viewed from above the surface 41a side. The outer circumferential line 55 and the inner circumferential line 56 are formed to extend in parallel to each other, and the outer circumferential line 55, a line segment 56a approaching the outer circumferential line 55 of the inner circumferential line 56, and a line segment 56b separated from the outer circumferential line 55. Is set. Moreover, the transition part 54c is formed with the line segment 56c extended in a substantially perpendicular direction with respect to the outer peripheral line 55 which opposes the approached line segment 56a.

したがって、第２堰き止め部５４で囲まれた領域５７は、第２堰き止め部５４の細幅部５４ａにおいて外周線５５側に拡張された拡張部５７ａを有している。   Therefore, the region 57 surrounded by the second damming portion 54 has an extended portion 57 a that is extended toward the outer peripheral line 55 in the narrow width portion 54 a of the second damming portion 54.

更に、第２の封止樹脂（以下、「第２封止樹脂」と呼称する）６０が、第２堰き止め部５４の内側面５４ｄで堰き止められた状態で該第２堰き止め部５４の内側に充填されて、第１封止樹脂５０の上面５０ａ、第１堰き止め部４４の上面４４ｅ及び外側面４４ｇを覆うように樹脂封止されている。充填された第２封止樹脂６０は、表面張力によって第２堰き止め部５４の上面内側端部５４ｆで広がりが抑えられると同時に、同様に表面張力によって第２堰き止め部５４の上面内側端部５４ｆから該２堰き止め部５４の内側面５４ｄの延長方向に立ち上がるドーム状に形成されている。   Further, the second sealing resin (hereinafter referred to as “second sealing resin”) 60 is blocked by the inner surface 54d of the second blocking part 54 and the second blocking part 54 Filled inside, resin-sealed so as to cover the upper surface 50a of the first sealing resin 50, the upper surface 44e and the outer surface 44g of the first damming portion 44. The filling of the filled second sealing resin 60 is suppressed by the surface tension at the upper surface inner end portion 54f of the second damming portion 54, and at the same time, similarly, the upper surface inner end portion of the second damming portion 54 by the surface tension. It is formed in a dome shape that rises from 54 f in the extending direction of the inner surface 54 d of the two damming portion 54.

半導体発光装置７０をこのような構成とすることにより、第１封止樹脂５０の一部が、第１堰き止め部４４で囲まれた領域４７の、第１堰き止め部４４の第１細幅部４４ａａにおいて外周線４５側に拡張された第１拡張部４７ａに入り込み、第１拡張部４７ａに入り込んだ第１封止樹脂５０に第１堰き止め部４４の第１細幅部４４ａａの内側面によるアンカー効果が生じて第１拡張部４７ａに固定される。そのため、第１堰き止め部４４（特に、第１堰き止め部４４の内側面４４ｄ）と第１封止樹脂５０の接する界面における接着性が補強されて向上し、熱応力に起因する界面剥離が防止される。   By configuring the semiconductor light emitting device 70 in such a configuration, a first narrow width of the first damming portion 44 in a region 47 in which a part of the first sealing resin 50 is surrounded by the first damming portion 44. The inner surface of the first narrow portion 44aa of the first damming portion 44 enters the first expansion portion 47a extended to the outer peripheral line 45 side in the portion 44aa and enters the first sealing resin 50 that has entered the first expansion portion 47a. The anchor effect is caused and is fixed to the first extension portion 47a. Therefore, the adhesion at the interface between the first damming portion 44 (particularly the inner surface 44d of the first damming portion 44) and the first sealing resin 50 is reinforced and improved, and interfacial delamination due to thermal stress occurs. Is prevented.

また、第２封止樹脂６０の一部が、第１堰き止め部４４の外側の、第２堰き止め部５４との間の領域（外側領域）４８の、第１堰き止め部４４の第２細幅部４４ａｂにおいて内周線４６側に拡張された第２拡張部４８ａに入り込み、第２拡張部４８ａに入り込んだ第２封止樹脂６０に第１堰き止め部４４の第２細幅部４４ａｂの内側面によるアンカー効果が生じて第２拡張部４８ａに固定される。そのため、第１堰き止め部４４（特に、第１堰き止め部４４の上面４４ｅ及び外側面４４ｇ）と第２止樹脂６０の接する界面における接着性が補強されて向上し、熱応力に起因する界面剥離が防止される。   In addition, a part of the second sealing resin 60 is in the second region of the first damming portion 44 in the region (outer region) 48 between the outer side of the first damming portion 44 and the second damming portion 54. The narrow portion 44ab enters the second extension portion 48a extended to the inner peripheral line 46 side, and the second sealing resin 60 that enters the second extension portion 48a enters the second narrow portion 44ab of the first damming portion 44. An anchor effect is generated by the inner surface of the second expansion portion 48a and is fixed to the second expansion portion 48a. Therefore, the adhesion at the interface between the first damming portion 44 (particularly, the upper surface 44e and the outer surface 44g of the first damming portion 44) and the second stopper resin 60 is reinforced and improved, and the interface caused by thermal stress. Peeling is prevented.

更に、第２封止樹脂６０の一部は、第２堰き止め部５４で囲まれた領域５７の、第２堰き止め部５４の細幅部５４ａにおいて外周線５５側に拡張された拡張部５７ａに入り込み、拡張部５７ａに入り込んだ第２封止樹脂６０に第２堰き止め部５４の細幅部５４ａの内側面によるアンカー効果が生じて拡張部５７ａに固定される。そのため、第２堰き止め部５４（特に、第２堰き止め部５４の内側面５４ｄ）と第２封止樹脂６０の接する界面における接着性が補強されて向上し、熱応力に起因する界面剥離が防止される。   Further, a part of the second sealing resin 60 is an expanded portion 57 a that is expanded to the outer peripheral line 55 side in the narrow width portion 54 a of the second damming portion 54 in the region 57 surrounded by the second damming portion 54. The anchor effect by the inner side surface of the narrow width portion 54a of the second damming portion 54 is generated in the second sealing resin 60 that has entered the expansion portion 57a and is fixed to the expansion portion 57a. Therefore, the adhesion at the interface between the second damming portion 54 (particularly the inner surface 54d of the second damming portion 54) and the second sealing resin 60 is reinforced and improved, and the interfacial peeling due to thermal stress is improved. Is prevented.

なお、第１堰き止め部４４の細幅部４４ａと太幅部４４ｂの夫々の幅及び厚み、及び第２堰き止め部５４の細幅部５４ａと太幅部５４ｂの夫々の幅及び厚みは任意であるが、第１堰き止め部４４の細幅部４４ａと太幅部４４ｂの幅の比率は、（１／２）〜（２／３）：１であることが好ましい。細幅部４４ａと太幅部４４ｂの幅の差が大きいと、第２封止樹脂６０との界面の面積（特に、上面４４ｅにおける接触面積）の差が大きくなって接着強度に強度差が生じ、第２封止樹脂６０に対して接着強度が相対的に弱い細幅部４４ａで第２封止樹脂６０の剥離が発生する。一方、細幅部４４ａと太幅部４４ｂの幅の差が小さいと、第２封止樹脂６０のアンカー効果が低減し、第１堰き止め部４４に細幅部４４ａと太幅部４４ｂを設ける意味が薄れるか、あるいは意味が無くなる。   Note that the width and thickness of the narrow width portion 44a and the wide width portion 44b of the first damming portion 44 and the width and thickness of the narrow width portion 54a and the wide width portion 54b of the second damming portion 54 are arbitrary. However, it is preferable that the ratio of the width of the narrow width portion 44a and the wide width portion 44b of the first damming portion 44 is (1/2) to (2/3): 1. If the width difference between the narrow width portion 44a and the wide width portion 44b is large, the difference in the area of the interface with the second sealing resin 60 (particularly, the contact area on the upper surface 44e) increases, resulting in a difference in strength in the adhesive strength. The second sealing resin 60 is peeled off at the narrow width portion 44 a having relatively weak adhesive strength with respect to the second sealing resin 60. On the other hand, if the difference in width between the narrow width portion 44a and the wide width portion 44b is small, the anchor effect of the second sealing resin 60 is reduced, and the narrow width portion 44a and the wide width portion 44b are provided in the first damming portion 44. Meaning fades or disappears.

また、第２堰き止め部５４の細幅部５４ａと太幅部５４ｂの幅の比率は、（２／３）以下：１であることが好ましい。細幅部５４ａと太幅部５４ｂの幅の差が小さいと、第２封止樹脂６０のアンカー効果が低減し、第２堰き止め部５４に細幅部５４ａと太幅部５４ｂを設ける意味が薄れるか、あるいは意味が無くなる。   Moreover, it is preferable that the ratio of the width | variety of the narrow part 54a of the 2nd damming part 54 and the wide part 54b is (2/3) or less: 1. When the difference in width between the narrow width portion 54a and the wide width portion 54b is small, the anchor effect of the second sealing resin 60 is reduced, and the meaning of providing the narrow width portion 54a and the wide width portion 54b in the second damming portion 54 is meant. Fade or lose meaning.

なお、第１堰き止め部４４の上面４４ｅは第１封止樹脂５０で覆わないことが好ましい。第１堰き止め部４４の上面４４ｅを第１封止樹脂５０で覆わないことにより、第１拡張部４７ａに第１封止樹脂５０が入り込んで第１堰き止め部４４と第１封止樹脂５０との間でアンカー効果が生じる。それと同時に、第１封止樹脂５０の、第１拡張部４７ａから上方に立ち上がる部分が他の部分に対して外側に出っ張った凸状部として形成され、第１封止樹脂５０と該第１樹脂５０を覆う第２封止樹脂６０との間で前記凸状部によるアンカー効果が生じて両者の密着性が強化される。   The upper surface 44e of the first damming portion 44 is preferably not covered with the first sealing resin 50. By not covering the upper surface 44 e of the first damming portion 44 with the first sealing resin 50, the first sealing resin 50 enters the first expansion portion 47 a and the first damming portion 44 and the first sealing resin 50. An anchor effect occurs between At the same time, a portion of the first sealing resin 50 that rises upward from the first expansion portion 47a is formed as a convex portion that protrudes outward with respect to the other portions, and the first sealing resin 50 and the first resin An anchor effect due to the convex portion is generated between the second sealing resin 60 and the second sealing resin 60, thereby enhancing the adhesion between the two.

第２堰き止め部５４の上面５４ｅは、第１封止樹脂５０及び第２封止樹脂６０のいずれにも覆われておらず、外部に直接露出した状態となっている。そのため、細幅部５４ａを、環状の第２堰き止め部５４の略中心に対して非対称の位置で且つ外部接続電極４２ｂとの位置関係を適宜設定することにより、極性マークとして用いることができる。これにより、基板４１上に別途極性表示部を設ける必要がないため装置の小型化が可能となると共に極性表示部の作成工程が不要なため製造コストの低減が図れる。   The upper surface 54e of the second damming portion 54 is not covered with either the first sealing resin 50 or the second sealing resin 60, and is directly exposed to the outside. Therefore, the narrow width portion 54a can be used as a polarity mark by appropriately setting the positional relationship with the external connection electrode 42b at an asymmetrical position with respect to the approximate center of the annular second damming portion 54. Thereby, since it is not necessary to separately provide the polarity display part on the substrate 41, the apparatus can be miniaturized, and the manufacturing cost can be reduced because the process of creating the polarity display part is unnecessary.

また、第２堰き止め部５４を例えば黒色のような、他の部分に対して鮮明なコントラストを得ることができるような色で形成することにより、細幅部５４ａによる極性マークを確実に認識することができるようになる。   Further, by forming the second damming portion 54 in a color that can obtain a clear contrast with respect to other portions, such as black, for example, the polar mark due to the narrow width portion 54a is reliably recognized. Will be able to.

なお、第１封止樹脂５０と第２封止樹脂６０は同一の透光性樹脂でも良いし、異なる透光性樹脂でも良い。同一の樹脂の場合、例えば、第１封止樹脂５０を透光性樹脂に蛍光体を分散した蛍光体分散樹脂とし、第２封止樹脂６０を添加剤を含まない透光性樹脂とすることも可能である。また、異なる樹脂の場合、例えば、第１封止樹脂５０を柔軟性を有するシリコーン樹脂とし、第２封止樹脂６０を硬質なエポキシ樹脂とすることも可能である。   The first sealing resin 50 and the second sealing resin 60 may be the same translucent resin or different translucent resins. In the case of the same resin, for example, the first sealing resin 50 is a phosphor-dispersed resin in which a phosphor is dispersed in a light-transmitting resin, and the second sealing resin 60 is a light-transmitting resin containing no additive. Is also possible. In the case of different resins, for example, the first sealing resin 50 may be a flexible silicone resin, and the second sealing resin 60 may be a hard epoxy resin.

ところで、上記いずれの半導体発光装置においても、堰き止め部の細幅部と太幅部との間の幅が変化する部分である遷移部を形成する線分は、外周線と内周線のうち細幅部を形成する線分（上記、接近した線分）に対向する線に対して略垂線方向に延びる線分で形成されるものであるが、必ずしもこれに限られるものではなく、図１０（遷移部の説明図）のように、外周線（Ａ）と内周線（Ｂ）のうち細幅部（Ｃ）を形成する線分（上記、接近した線分）（Ｄ）に対向する線（Ａ）に対して略垂線方向に延びる線ａを０°の方向とした場合、遷移部を形成する線分（Ｅ）を線ａに対して適宜な角度θに設定することができる。この場合、角度θを０°以上、９０°未満とすることにより、封止樹脂とのアンカー効果を得ることができるが、角度θが０°に近づくほど大きなアンカー効果を得ることができる。   By the way, in any of the above semiconductor light emitting devices, the line segment forming the transition portion, which is the portion where the width between the narrow width portion and the thick width portion of the damming portion changes, is the outer line and the inner line. Although it is formed by a line segment that extends in a direction substantially perpendicular to a line that opposes the line segment that forms the narrow width portion (the above-mentioned approached line segment), the present invention is not necessarily limited to this. As shown in (an explanatory diagram of the transition part), it is opposed to the line segment (the above-mentioned close line segment) (D) forming the narrow width part (C) of the outer peripheral line (A) and the inner peripheral line (B). When the line a extending substantially perpendicular to the line (A) is set to a direction of 0 °, the line segment (E) forming the transition portion can be set to an appropriate angle θ with respect to the line a. In this case, by setting the angle θ to 0 ° or more and less than 90 °, an anchor effect with the sealing resin can be obtained, but a larger anchor effect can be obtained as the angle θ approaches 0 °.

なお、図１１（遷移部の説明図）のように、遷移部を形成する線分（Ｅ）を線ａに対し−方向の適度な確度（−θ）とすることも可能である。これによっても封止樹脂とのアンカー効果を得ることができる。   As shown in FIG. 11 (an explanatory diagram of the transition portion), the line segment (E) that forms the transition portion can have an appropriate accuracy (−θ) in the − direction with respect to the line a. Also by this, the anchor effect with the sealing resin can be obtained.

更に、線分（Ｅ）と線分（Ｄ）との接続部分及び線分（Ｅ）と内周線（Ｂ）との接続部分は、図１０及び図１１のようにいずれも直線的に接続されてもよいし、曲線状に接続（図６ａの太幅部５ｂ、遷移部５ｃ）されてもよい。   Further, the connecting portion between the line segment (E) and the line segment (D) and the connecting portion between the line segment (E) and the inner peripheral line (B) are both connected linearly as shown in FIGS. Alternatively, they may be connected in a curved shape (the wide width portion 5b and the transition portion 5c in FIG. 6a).

１… 基板
１ａ… 表面
１ｂ… 裏面
２… 回路パターン
２ａ… ダイボンディングパッド
２ｂ… ワイヤボンディングパッド
２ｃ… 外部接続電極
３… 半導体発光素子
３ａ… 電極
３ｂ… 光出射面
４… ボンディングワイヤ
５… 堰き止め部
５ａ… 細幅部
５ｂ… 太幅部
５ｃ… 遷移部
５ｄ… 上面外側端部
５ｅ… 外側面
５ｆ… 上面
６… 外周線
７… 内周線
７ａ… 線分
７ｂ… 線分
７ｃ… 線分
８… 領域（ボンディング領域）
８ａ… 拡張部
９… ダイボンディング材（接着剤）
１０… 封止樹脂
１０ａ… 表面
２０… 半導体発光装置
３０・・・ ツェナーダイオード
３１… 接着剤
４１… 基板
４１ａ… 表面
４１ｂ… 裏面
４２… 回路パターン
４２ａ… 電極パッド
４２ｂ… 外部接続電極
４３… 半導体発光素子
４４… 第１堰き止め部
４４ａ… 細幅部
４４ａａ… 第１細幅部
４４ａｂ… 第２細幅部
４４ｂ… 太幅部
４４ｃ… 遷移部
４４ｄ… 内側面
４４ｅ… 上面
４４ｆ… 上面内側端部
４４ｇ… 外側面
４５… 外周線
４５ａ… 線分
４６… 内周線
４６ａ… 線分
４７… 領域（ボンディング領域）
４７ａ… 第１拡張部
４８… 領域（外側領域）
４８ａ… 第２拡張部
４９… 線分
５０… 第１封止樹脂
５０ａ… 上面
５４… 第２堰き止め部
５４ａ… 細幅部
５４ｂ… 太幅部
５４ｃ… 遷移部
５４ｄ… 内側面
５４ｅ… 上面
５４ｆ… 上面内側端部
５５… 外周線
５６… 内周線
５６ａ… 線分
５６ｂ… 線分
５６ｃ… 線分
５７… 領域
５７ａ… 拡張部
５８… バンプ
６０… 第２封止樹脂
７０… 半導体発光装置 DESCRIPTION OF SYMBOLS 1 ... Board | substrate 1a ... Front surface 1b ... Back surface 2 ... Circuit pattern 2a ... Die bonding pad 2b ... Wire bonding pad 2c ... External connection electrode 3 ... Semiconductor light emitting element 3a ... Electrode 3b ... Light-emitting surface 4 ... Bonding wire 5 ... Damping part 5a ... Narrow part 5b ... Wide part 5c ... Transition part 5d ... Upper surface outer edge part 5e ... Outer side surface 5f ... Upper surface 6 ... Outer peripheral line 7 ... Inner peripheral line 7a ... Line segment 7b ... Line segment 7c ... Line segment 8 ... Area (bonding area)
8a ... Expansion part 9 ... Die bonding material (adhesive)
DESCRIPTION OF SYMBOLS 10 ... Sealing resin 10a ... Surface 20 ... Semiconductor light-emitting device 30 ... Zener diode 31 ... Adhesive 41 ... Substrate 41a ... Front surface 41b ... Back surface 42 ... Circuit pattern 42a ... Electrode pad 42b ... External connection electrode 43 ... Semiconductor light emitting element 44 ... 1st damming part 44a ... Narrow part 44aa ... 1st narrow part 44ab ... 2nd narrow part 44b ... Wide part 44c ... Transition part 44d ... Inner side surface 44e ... Upper surface 44f ... Upper surface inner side edge part 44g ... Outer side surface 45 ... Outer peripheral line 45a ... Line segment 46 ... Inner peripheral line 46a ... Line segment 47 ... Area (bonding area)
47a ... 1st expansion part 48 ... area | region (outside area | region)
48a ... 2nd extended part 49 ... Line segment 50 ... 1st sealing resin 50a ... Upper surface 54 ... 2nd damming part 54a ... Narrow part 54b ... Wide part 54c ... Transition part 54d ... Inner side surface 54e ... Upper surface 54f ... Upper end inner surface 55 ... Outer peripheral line 56 ... Inner peripheral line 56a ... Line segment 56b ... Line segment 56c ... Line segment 57 ... Area 57a ... Expansion part 58 ... Bump 60 ... Second sealing resin 70 ... Semiconductor light emitting device

Claims (9)

半導体発光素子を実装するダイボンディングパッド部と、
当該ダイボンディングパッド部と離間し、前記ダイボンディングパッド部の一辺に並んで形成した第１パッド部と、
前記ダイボンディングパッド部の前記第１パッド部と反対側に形成した第２パッド部を導電部材により形成した基板と、
前記基板上に実装された半導体発光素子と、
前記基板表面であって前記半導体発光素子、前記ダイボンディングパッド部、前記第１パッド部及び前記第２パッド部の周囲を切れ目なく囲むように形成された第１堰き止め部と、
前記第１堰き止め部に堰き止められて、前記半導体発光素子を封止する第１封止樹脂と、を有し、
前記第１堰き止め部は、太幅部、細幅部、前記太幅部と前記細幅部との間の幅が変化する部分である遷移部とを含み、
前記第１封止樹脂は前記第１堰き止め部の上面外側端部から外側面の延長方向に立ち上がる形状であり、
前記遷移部は、前記第１パッド部もしくは前記第２パッド部の、前記第１パッド部、前記ダイボンディングパッド部及び前記第２パッド部が並んでいる方向と直交する方向側の側面の近くに位置し、前記並んでいる方向と前記第１堰き止め部とが交差する部分は前記細幅部が位置して前記第１封止樹脂が前記第１堰き止め部に対するアンカー効果を持つように作用することを特徴とする半導体発光装置。 A die bonding pad portion for mounting a semiconductor light emitting element;
A first pad portion that is spaced apart from the die bonding pad portion and formed along one side of the die bonding pad portion;
A substrate in which a second pad portion formed on the opposite side of the die bonding pad portion from the first pad portion is formed of a conductive member;
A semiconductor light emitting device mounted on the substrate;
A first damming portion formed on the substrate surface so as to surround the semiconductor light emitting element, the die bonding pad portion, the first pad portion, and the second pad portion without any breaks;
A first sealing resin that is blocked by the first blocking portion and seals the semiconductor light emitting element;
The first damming portion includes a wide width portion, a narrow width portion, and a transition portion that is a portion where a width between the wide width portion and the narrow width portion changes,
The first sealing resin has a shape that rises in the extending direction of the outer surface from the upper surface outer end of the first damming portion,
The transition portion is near a side surface of the first pad portion or the second pad portion on the direction side orthogonal to the direction in which the first pad portion, the die bonding pad portion, and the second pad portion are arranged. The portion where the lined-up direction and the first damming portion intersect is positioned so that the narrow width portion is located so that the first sealing resin has an anchoring effect on the first damming portion. A semiconductor light emitting device. 前記細幅部は前記第１堰き止め部の外周方向に凹んだ凹み部を形成しており、前記凹み部に前記半導体発光素子とは別の素子の少なくとも一部分が配置されていることを特徴とする請求項１に記載の半導体発光装置。   The narrow width portion forms a recessed portion recessed in the outer peripheral direction of the first damming portion, and at least a part of an element different from the semiconductor light emitting element is disposed in the recessed portion. The semiconductor light emitting device according to claim 1. 前記第１堰き止め部の外側に該第１堰き止め部の周囲を切れ目なく囲むように設けられた、太幅部、細幅部、前記太幅部と前記細幅部との間の幅が変化する部分である遷移部とを含む第２堰き止め部と、
前記２堰き止めに堰き止められて、前記第１堰き止め部及び前記第１封止樹脂を封止する第２封止樹脂と、を有し、
前記第２堰き止め部の遷移部は、前記第２封止樹脂が前記第２堰き止め部に対するアンカー効果を持つように作用することを特徴とする請求項１に記載の半導体発光装置。 A wide width portion, a narrow width portion, and a width between the wide width portion and the narrow width portion, which are provided outside the first damming portion so as to surround the periphery of the first damming portion without interruption. A second damming portion including a transition portion that is a changing portion;
A second sealing resin sealed by the two dams and sealing the first damming part and the first sealing resin;
The semiconductor light emitting device according to claim 1, wherein the transition portion of the second damming portion acts so that the second sealing resin has an anchor effect with respect to the second damming portion. 前記第１堰き止め部の細幅部は、該第１堰き止め部の外周方向に凹んだ第１凹み部及び内周方向に凹んだ第２凹み部の２種類の凹み部を形成し、前記第２堰き止め部の細幅部は、該第２堰き止め部の外周方向に凹んだ凹み部を形成していることを特徴とする請求項３に記載の半導体発光装置。   The narrow width portion of the first damming portion forms two types of dent portions, a first dent portion recessed in the outer circumferential direction of the first damming portion and a second dent portion recessed in the inner circumferential direction, 4. The semiconductor light emitting device according to claim 3, wherein the narrow width portion of the second damming portion forms a dent portion recessed in the outer peripheral direction of the second damming portion. 前記第１堰き止め部の前記第１凹み部に、前記半導体発光素子とは別の素子の少なくとも一部分が配置されていることを特徴とする請求項４に記載の半導体発光装置。   5. The semiconductor light emitting device according to claim 4, wherein at least a part of an element different from the semiconductor light emitting element is disposed in the first recess portion of the first damming portion. 半導体発光素子を実装するダイボンディングパッド部と、
当該ダイボンディングパッド部と離間し、前記ダイボンディングパッド部の一辺に並んで形成した第１パッド部と、
前記ダイボンディングパッド部の前記第１パッド部と反対側に形成した第２パッド部を導電部材により形成した基板と、
前記基板上に実装された半導体発光素子と、
前記基板表面であって前記半導体発光素子、前記ダイボンディングパッド部、前記第１パッド部及び前記第２パッド部の周囲を切れ目なく囲むように形成された第１堰き止め部と、
前記第１堰き止め部に堰き止められて、前記半導体発光素子を封止する第１封止樹脂と、を有し、
前記第１堰き止め部の外側に該第１堰き止め部の周囲を切れ目なく囲むように形成された、太幅部、細幅部、前記太幅部と前記細幅部との間の幅が変化する部分である遷移部とを含む第２堰き止め部と、
前記第２堰き止め部に堰き止められて、前記第１堰き止め部及び前記第１封止樹脂を封止する第２封止樹脂と、を有し、
前記第２封止樹脂は前記第２堰き止め部の上面外側端部から外側面の延長方向に立ち上がる形状であり、
前記第２堰き止め部の遷移部は、前記第２封止樹脂が前記第２堰き止め部に対するアンカー効果を持つように作用することを特徴とする半導体発光装置。 A die bonding pad portion for mounting a semiconductor light emitting element;
A first pad portion that is spaced apart from the die bonding pad portion and formed along one side of the die bonding pad portion;
A substrate in which a second pad portion formed on the opposite side of the die bonding pad portion from the first pad portion is formed of a conductive member;
A semiconductor light emitting device mounted on the substrate;
A first damming portion formed on the substrate surface so as to surround the semiconductor light emitting element, the die bonding pad portion, the first pad portion, and the second pad portion without any breaks;
A first sealing resin that is blocked by the first blocking portion and seals the semiconductor light emitting element;
A wide width portion, a narrow width portion, and a width between the wide width portion and the narrow width portion, which are formed outside the first damming portion so as to surround the periphery of the first damming portion without breaks. A second damming portion including a transition portion that is a changing portion;
A second sealing resin that is dammed to the second damming portion and seals the first damming portion and the first sealing resin;
The second sealing resin has a shape that rises in the extending direction of the outer surface from the upper surface outer end of the second damming portion,
The transition portion of the second damming portion acts so that the second sealing resin has an anchor effect with respect to the second damming portion. 前記第１堰き止め部の細幅部は、該第１堰き止め部の外周方向に凹んだ第１凹み部及び内周方向に凹んだ第２凹み部の２種類の凹み部を形成し、前記第２堰き止め部の細幅部は、該第２堰き止め部の外周方向に凹んだ凹み部を形成していることを特徴とする請求項６に記載の半導体発光装置。   The narrow width portion of the first damming portion forms two types of dent portions, a first dent portion recessed in the outer circumferential direction of the first damming portion and a second dent portion recessed in the inner circumferential direction, The semiconductor light emitting device according to claim 6, wherein the narrow width portion of the second damming portion forms a dent portion recessed in the outer peripheral direction of the second damming portion. 前記第１堰き止め部の前記第１凹み部に、前記半導体発光素子とは別の素子の少なくとも一部分が配置されていることを特徴とする請求項７に記載の半導体発光装置。   The semiconductor light emitting device according to claim 7, wherein at least a part of an element different from the semiconductor light emitting element is disposed in the first recess of the first damming portion. 前記第１堰き止め部の上面まで前記第２封止樹脂が配置されていることを特徴とする請求項４〜請求項６のいずれかに記載の半導体発光装置。   The semiconductor light emitting device according to claim 4, wherein the second sealing resin is disposed up to an upper surface of the first damming portion.
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