JP6195369B2 - 固体撮像装置、カメラ、および、固体撮像装置の製造方法 - Google Patents

固体撮像装置、カメラ、および、固体撮像装置の製造方法 Download PDF

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Publication number
JP6195369B2
JP6195369B2 JP2013235388A JP2013235388A JP6195369B2 JP 6195369 B2 JP6195369 B2 JP 6195369B2 JP 2013235388 A JP2013235388 A JP 2013235388A JP 2013235388 A JP2013235388 A JP 2013235388A JP 6195369 B2 JP6195369 B2 JP 6195369B2
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JP
Japan
Prior art keywords
microlenses
solid
imaging device
group
state imaging
Prior art date
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Expired - Fee Related
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JP2013235388A
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English (en)
Japanese (ja)
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JP2015095603A (ja
JP2015095603A5 (https=
Inventor
晃聖 上平
晃聖 上平
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013235388A priority Critical patent/JP6195369B2/ja
Priority to US14/533,312 priority patent/US9362323B2/en
Publication of JP2015095603A publication Critical patent/JP2015095603A/ja
Publication of JP2015095603A5 publication Critical patent/JP2015095603A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013235388A 2013-11-13 2013-11-13 固体撮像装置、カメラ、および、固体撮像装置の製造方法 Expired - Fee Related JP6195369B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013235388A JP6195369B2 (ja) 2013-11-13 2013-11-13 固体撮像装置、カメラ、および、固体撮像装置の製造方法
US14/533,312 US9362323B2 (en) 2013-11-13 2014-11-05 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013235388A JP6195369B2 (ja) 2013-11-13 2013-11-13 固体撮像装置、カメラ、および、固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2015095603A JP2015095603A (ja) 2015-05-18
JP2015095603A5 JP2015095603A5 (https=) 2016-11-10
JP6195369B2 true JP6195369B2 (ja) 2017-09-13

Family

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Family Applications (1)

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JP2013235388A Expired - Fee Related JP6195369B2 (ja) 2013-11-13 2013-11-13 固体撮像装置、カメラ、および、固体撮像装置の製造方法

Country Status (2)

Country Link
US (1) US9362323B2 (https=)
JP (1) JP6195369B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016103430A1 (ja) * 2014-12-25 2016-06-30 キヤノン株式会社 ラインセンサ、画像読取装置、画像形成装置
CN104867951B (zh) * 2015-04-23 2018-05-04 豪威科技(上海)有限公司 一种背照式传感器芯片及其制造方法
JP2023002152A (ja) 2021-06-22 2023-01-10 キヤノン株式会社 光電変換装置、光電変換装置の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3551437B2 (ja) 1992-10-29 2004-08-04 ソニー株式会社 固体撮像装置
JPH07113983A (ja) 1993-10-14 1995-05-02 Sony Corp 固体撮像素子
JPH08288481A (ja) * 1995-04-13 1996-11-01 Sony Corp 固体撮像素子の製造方法および固体撮像素子
KR100223853B1 (ko) 1996-08-26 1999-10-15 구본준 고체촬상소자의 구조 및 제조방법
JP4186238B2 (ja) 1996-08-30 2008-11-26 ソニー株式会社 マイクロレンズアレイの形成方法及び固体撮像素子の製造方法
US5948281A (en) 1996-08-30 1999-09-07 Sony Corporation Microlens array and method of forming same and solid-state image pickup device and method of manufacturing same
JPH1098173A (ja) 1996-09-25 1998-04-14 Sony Corp オンチップマイクロレンズの形成方法
JP3462736B2 (ja) * 1997-11-17 2003-11-05 ペンタックス株式会社 固体撮像素子
JP2000164838A (ja) 1998-11-25 2000-06-16 Sony Corp 固体撮像素子及び固体撮像素子の製造方法
JP2002209226A (ja) * 2000-12-28 2002-07-26 Canon Inc 撮像装置
JP2005116939A (ja) * 2003-10-10 2005-04-28 Nikon Corp 固体撮像素子
JP4882224B2 (ja) * 2004-11-26 2012-02-22 ソニー株式会社 固体撮像装置の製造方法
KR100693927B1 (ko) * 2005-02-03 2007-03-12 삼성전자주식회사 마이크로 렌즈 제조방법, 마이크로 렌즈 어레이 제조방법및 이미지 센서 제조방법
KR100710208B1 (ko) * 2005-09-22 2007-04-20 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
JP2010192705A (ja) * 2009-02-18 2010-09-02 Sony Corp 固体撮像装置、電子機器、および、その製造方法
JP5568934B2 (ja) 2009-09-29 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、電子機器、レンズアレイ
JP2012064924A (ja) * 2010-08-17 2012-03-29 Canon Inc マイクロレンズアレイの製造方法、固体撮像装置の製造方法および固体撮像装置
JP2012134261A (ja) 2010-12-20 2012-07-12 Sharp Corp レンズおよびその製造方法、固体撮像素子およびその製造方法、電子情報機器
JP6029266B2 (ja) * 2011-08-09 2016-11-24 キヤノン株式会社 撮像装置、撮像システムおよび撮像装置の製造方法

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Publication number Publication date
JP2015095603A (ja) 2015-05-18
US9362323B2 (en) 2016-06-07
US20150130006A1 (en) 2015-05-14

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