JP6175964B2 - 撮像素子、撮像装置、並びに、製造装置および方法 - Google Patents

撮像素子、撮像装置、並びに、製造装置および方法 Download PDF

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JP6175964B2
JP6175964B2 JP2013158558A JP2013158558A JP6175964B2 JP 6175964 B2 JP6175964 B2 JP 6175964B2 JP 2013158558 A JP2013158558 A JP 2013158558A JP 2013158558 A JP2013158558 A JP 2013158558A JP 6175964 B2 JP6175964 B2 JP 6175964B2
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Japan
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protective film
silicon substrate
film
light
optical filter
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JP2013158558A
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Japanese (ja)
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JP2015032590A (ja
JP2015032590A5 (enExample
Inventor
慎太郎 中食
慎太郎 中食
征博 狭山
征博 狭山
祥哲 東宮
祥哲 東宮
忠幸 堂福
忠幸 堂福
豊美 神脇
豊美 神脇
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Sony Corp
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Sony Corp
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Priority to JP2013158558A priority Critical patent/JP6175964B2/ja
Priority to US14/340,350 priority patent/US9263493B2/en
Priority to CN201410356266.XA priority patent/CN104347659B/zh
Publication of JP2015032590A publication Critical patent/JP2015032590A/ja
Publication of JP2015032590A5 publication Critical patent/JP2015032590A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013158558A 2013-07-31 2013-07-31 撮像素子、撮像装置、並びに、製造装置および方法 Expired - Fee Related JP6175964B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013158558A JP6175964B2 (ja) 2013-07-31 2013-07-31 撮像素子、撮像装置、並びに、製造装置および方法
US14/340,350 US9263493B2 (en) 2013-07-31 2014-07-24 Image pickup element, imaging apparatus, manufacturing apparatus for image pickup element, and manufacturing method for image pickup element
CN201410356266.XA CN104347659B (zh) 2013-07-31 2014-07-24 图像拾取元件、其制造设备及制造方法以及成像设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013158558A JP6175964B2 (ja) 2013-07-31 2013-07-31 撮像素子、撮像装置、並びに、製造装置および方法

Publications (3)

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JP2015032590A JP2015032590A (ja) 2015-02-16
JP2015032590A5 JP2015032590A5 (enExample) 2016-02-18
JP6175964B2 true JP6175964B2 (ja) 2017-08-09

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JP2013158558A Expired - Fee Related JP6175964B2 (ja) 2013-07-31 2013-07-31 撮像素子、撮像装置、並びに、製造装置および方法

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Country Link
US (1) US9263493B2 (enExample)
JP (1) JP6175964B2 (enExample)
CN (1) CN104347659B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015076475A (ja) * 2013-10-08 2015-04-20 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
US9980257B2 (en) * 2014-09-26 2018-05-22 Qualcomm Incorporated Ultra-low latency LTE reference signal transmission
US9955462B2 (en) 2014-09-26 2018-04-24 Qualcomm Incorporated Ultra-low latency LTE control data communication
JP6493087B2 (ja) * 2015-08-24 2019-04-03 株式会社デンソー 車載カメラ装置
CN108353121B (zh) * 2015-11-06 2020-11-03 Lg伊诺特有限公司 相机模组
WO2018199065A1 (ja) * 2017-04-25 2018-11-01 富士フイルム株式会社 撮像装置および積層体
JP7503399B2 (ja) * 2020-03-16 2024-06-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02312274A (ja) * 1989-05-26 1990-12-27 Fujitsu Ltd カラー固体撮像装置及びその製造方法
JPH08125153A (ja) * 1994-10-24 1996-05-17 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
JP2003197897A (ja) * 2001-12-28 2003-07-11 Fuji Film Microdevices Co Ltd 半導体光電変換装置
JP2005049636A (ja) * 2003-07-29 2005-02-24 Toyo Ink Mfg Co Ltd カラーフィルタ用着色組成物およびカラーフィルタ
JP4867160B2 (ja) * 2004-11-26 2012-02-01 ソニー株式会社 光電変換素子及び光電変換装置
CN101263201B (zh) * 2005-09-16 2012-10-17 松下电器产业株式会社 复合材料、及使用该材料的光学部件
JP2008060464A (ja) * 2006-09-01 2008-03-13 Fujifilm Corp マイクロレンズ用材料、マイクロレンズおよびその製造方法
KR100875178B1 (ko) * 2007-09-07 2008-12-22 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
JP2009168872A (ja) * 2008-01-11 2009-07-30 Sony Corp レンズの製造方法および固体撮像装置の製造方法
JP4835719B2 (ja) * 2008-05-22 2011-12-14 ソニー株式会社 固体撮像装置及び電子機器
JP5434252B2 (ja) * 2009-05-14 2014-03-05 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5573417B2 (ja) * 2010-06-29 2014-08-20 東洋インキＳｃホールディングス株式会社 カラーフィルタ用青色着色組成物、およびカラー固体撮像素子に用いるカラーフィルタ
JP5663925B2 (ja) * 2010-03-31 2015-02-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP2012023251A (ja) * 2010-07-15 2012-02-02 Sony Corp 固体撮像素子及び固体撮像素子の製造方法、電子機器
JP2012234968A (ja) * 2011-04-28 2012-11-29 Sharp Corp 固体撮像装置およびその製造方法、並びに電子情報機器
JP2013077740A (ja) * 2011-09-30 2013-04-25 Sony Corp 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
US20130100324A1 (en) * 2011-10-21 2013-04-25 Sony Corporation Method of manufacturing solid-state image pickup element, solid-state image pickup element, image pickup device, electronic apparatus, solid-state image pickup device, and method of manufacturing solid-state image pickup device
JP2013120886A (ja) * 2011-12-08 2013-06-17 Sony Corp 固体撮像素子およびその製造方法、並びに、電子機器

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Publication number Publication date
JP2015032590A (ja) 2015-02-16
US20150035105A1 (en) 2015-02-05
US9263493B2 (en) 2016-02-16
CN104347659A (zh) 2015-02-11
CN104347659B (zh) 2019-07-26

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