CN104347659B - 图像拾取元件、其制造设备及制造方法以及成像设备 - Google Patents
图像拾取元件、其制造设备及制造方法以及成像设备 Download PDFInfo
- Publication number
- CN104347659B CN104347659B CN201410356266.XA CN201410356266A CN104347659B CN 104347659 B CN104347659 B CN 104347659B CN 201410356266 A CN201410356266 A CN 201410356266A CN 104347659 B CN104347659 B CN 104347659B
- Authority
- CN
- China
- Prior art keywords
- protective film
- silicon substrate
- film
- image pickup
- forming unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013158558A JP6175964B2 (ja) | 2013-07-31 | 2013-07-31 | 撮像素子、撮像装置、並びに、製造装置および方法 |
| JP2013-158558 | 2013-07-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104347659A CN104347659A (zh) | 2015-02-11 |
| CN104347659B true CN104347659B (zh) | 2019-07-26 |
Family
ID=52426918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410356266.XA Expired - Fee Related CN104347659B (zh) | 2013-07-31 | 2014-07-24 | 图像拾取元件、其制造设备及制造方法以及成像设备 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9263493B2 (enExample) |
| JP (1) | JP6175964B2 (enExample) |
| CN (1) | CN104347659B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015076475A (ja) * | 2013-10-08 | 2015-04-20 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| US9980257B2 (en) * | 2014-09-26 | 2018-05-22 | Qualcomm Incorporated | Ultra-low latency LTE reference signal transmission |
| US9955462B2 (en) | 2014-09-26 | 2018-04-24 | Qualcomm Incorporated | Ultra-low latency LTE control data communication |
| JP6493087B2 (ja) * | 2015-08-24 | 2019-04-03 | 株式会社デンソー | 車載カメラ装置 |
| CN108353121B (zh) * | 2015-11-06 | 2020-11-03 | Lg伊诺特有限公司 | 相机模组 |
| WO2018199065A1 (ja) * | 2017-04-25 | 2018-11-01 | 富士フイルム株式会社 | 撮像装置および積層体 |
| JP7503399B2 (ja) * | 2020-03-16 | 2024-06-20 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及びその製造方法、並びに電子機器 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101888489A (zh) * | 2009-05-14 | 2010-11-17 | 索尼公司 | 固体摄像器件、其制造方法以及电子装置 |
| CN103066082A (zh) * | 2011-10-21 | 2013-04-24 | 索尼公司 | 固体摄像元件及其制造方法、摄像装置、电子设备、固体摄像装置及其制造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02312274A (ja) * | 1989-05-26 | 1990-12-27 | Fujitsu Ltd | カラー固体撮像装置及びその製造方法 |
| JPH08125153A (ja) * | 1994-10-24 | 1996-05-17 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
| JP2003197897A (ja) * | 2001-12-28 | 2003-07-11 | Fuji Film Microdevices Co Ltd | 半導体光電変換装置 |
| JP2005049636A (ja) * | 2003-07-29 | 2005-02-24 | Toyo Ink Mfg Co Ltd | カラーフィルタ用着色組成物およびカラーフィルタ |
| JP4867160B2 (ja) * | 2004-11-26 | 2012-02-01 | ソニー株式会社 | 光電変換素子及び光電変換装置 |
| CN101263201B (zh) * | 2005-09-16 | 2012-10-17 | 松下电器产业株式会社 | 复合材料、及使用该材料的光学部件 |
| JP2008060464A (ja) * | 2006-09-01 | 2008-03-13 | Fujifilm Corp | マイクロレンズ用材料、マイクロレンズおよびその製造方法 |
| KR100875178B1 (ko) * | 2007-09-07 | 2008-12-22 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
| JP2009168872A (ja) * | 2008-01-11 | 2009-07-30 | Sony Corp | レンズの製造方法および固体撮像装置の製造方法 |
| JP4835719B2 (ja) * | 2008-05-22 | 2011-12-14 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP5573417B2 (ja) * | 2010-06-29 | 2014-08-20 | 東洋インキScホールディングス株式会社 | カラーフィルタ用青色着色組成物、およびカラー固体撮像素子に用いるカラーフィルタ |
| JP5663925B2 (ja) * | 2010-03-31 | 2015-02-04 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| JP2012023251A (ja) * | 2010-07-15 | 2012-02-02 | Sony Corp | 固体撮像素子及び固体撮像素子の製造方法、電子機器 |
| JP2012234968A (ja) * | 2011-04-28 | 2012-11-29 | Sharp Corp | 固体撮像装置およびその製造方法、並びに電子情報機器 |
| JP2013077740A (ja) * | 2011-09-30 | 2013-04-25 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、及び、電子機器 |
| JP2013120886A (ja) * | 2011-12-08 | 2013-06-17 | Sony Corp | 固体撮像素子およびその製造方法、並びに、電子機器 |
-
2013
- 2013-07-31 JP JP2013158558A patent/JP6175964B2/ja not_active Expired - Fee Related
-
2014
- 2014-07-24 CN CN201410356266.XA patent/CN104347659B/zh not_active Expired - Fee Related
- 2014-07-24 US US14/340,350 patent/US9263493B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101888489A (zh) * | 2009-05-14 | 2010-11-17 | 索尼公司 | 固体摄像器件、其制造方法以及电子装置 |
| CN103066082A (zh) * | 2011-10-21 | 2013-04-24 | 索尼公司 | 固体摄像元件及其制造方法、摄像装置、电子设备、固体摄像装置及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015032590A (ja) | 2015-02-16 |
| US20150035105A1 (en) | 2015-02-05 |
| US9263493B2 (en) | 2016-02-16 |
| CN104347659A (zh) | 2015-02-11 |
| JP6175964B2 (ja) | 2017-08-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190726 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |