JP6168331B2 - 撮像素子、および撮像装置 - Google Patents

撮像素子、および撮像装置 Download PDF

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Publication number
JP6168331B2
JP6168331B2 JP2012117194A JP2012117194A JP6168331B2 JP 6168331 B2 JP6168331 B2 JP 6168331B2 JP 2012117194 A JP2012117194 A JP 2012117194A JP 2012117194 A JP2012117194 A JP 2012117194A JP 6168331 B2 JP6168331 B2 JP 6168331B2
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Japan
Prior art keywords
light
trench
shielding layer
imaging device
layer formed
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Expired - Fee Related
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JP2012117194A
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English (en)
Japanese (ja)
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JP2013243324A5 (https=
JP2013243324A (ja
Inventor
裕美 岡崎
裕美 岡崎
内山　正之
正之 内山
渡辺　一史
一史 渡辺
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2012117194A priority Critical patent/JP6168331B2/ja
Priority to CN201380025543.2A priority patent/CN104303305B/zh
Priority to US14/401,396 priority patent/US10074684B2/en
Priority to PCT/JP2013/003135 priority patent/WO2013175742A1/en
Priority to KR1020147030033A priority patent/KR102115046B1/ko
Publication of JP2013243324A publication Critical patent/JP2013243324A/ja
Publication of JP2013243324A5 publication Critical patent/JP2013243324A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2012117194A 2012-05-23 2012-05-23 撮像素子、および撮像装置 Expired - Fee Related JP6168331B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012117194A JP6168331B2 (ja) 2012-05-23 2012-05-23 撮像素子、および撮像装置
CN201380025543.2A CN104303305B (zh) 2012-05-23 2013-05-16 成像装置
US14/401,396 US10074684B2 (en) 2012-05-23 2013-05-16 Image pickup device with pixels having non-intersecting substrate trenches therebetween
PCT/JP2013/003135 WO2013175742A1 (en) 2012-05-23 2013-05-16 Imaging device
KR1020147030033A KR102115046B1 (ko) 2012-05-23 2013-05-16 촬상 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012117194A JP6168331B2 (ja) 2012-05-23 2012-05-23 撮像素子、および撮像装置

Publications (3)

Publication Number Publication Date
JP2013243324A JP2013243324A (ja) 2013-12-05
JP2013243324A5 JP2013243324A5 (https=) 2015-03-19
JP6168331B2 true JP6168331B2 (ja) 2017-07-26

Family

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Family Applications (1)

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JP2012117194A Expired - Fee Related JP6168331B2 (ja) 2012-05-23 2012-05-23 撮像素子、および撮像装置

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US (1) US10074684B2 (https=)
JP (1) JP6168331B2 (https=)
KR (1) KR102115046B1 (https=)
CN (1) CN104303305B (https=)
WO (1) WO2013175742A1 (https=)

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KR102450562B1 (ko) * 2014-03-13 2022-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
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JP6570844B2 (ja) * 2015-02-26 2019-09-04 株式会社東芝 光検出器、その製造方法、放射線検出器、および放射線検出装置
US9653511B2 (en) 2015-08-11 2017-05-16 Omnivision Technologies, Inc. CMOS image sensor with peninsular ground contracts and method of manufacturing the same
JP2017168566A (ja) * 2016-03-15 2017-09-21 ソニー株式会社 固体撮像素子、および電子機器
CN108231809A (zh) * 2017-12-12 2018-06-29 上海集成电路研发中心有限公司 一种背照式图像传感器及其制备方法
JP2019145544A (ja) 2018-02-16 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子
JP2020031136A (ja) 2018-08-22 2020-02-27 キヤノン株式会社 撮像装置およびカメラ
US11121160B2 (en) 2018-10-17 2021-09-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region
US11244978B2 (en) 2018-10-17 2022-02-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment including the same
JP7479801B2 (ja) * 2019-08-27 2024-05-09 ソニーセミコンダクタソリューションズ株式会社 撮像素子、製造方法、および電子機器
KR102696965B1 (ko) * 2019-09-03 2024-08-21 에스케이하이닉스 주식회사 이미지 센서
WO2021095668A1 (ja) * 2019-11-13 2021-05-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法
JP2021086881A (ja) * 2019-11-26 2021-06-03 キヤノン株式会社 光電変換装置、光電変換装置の製造方法、および機器
US11393861B2 (en) * 2020-01-30 2022-07-19 Omnivision Technologies, Inc. Flare-suppressing image sensor
US11469264B2 (en) * 2020-01-30 2022-10-11 Omnivision Technologies, Inc. Flare-blocking image sensor
CN115176343A (zh) * 2020-04-20 2022-10-11 索尼半导体解决方案公司 固态摄像元件和电子设备
JP2022157160A (ja) * 2021-03-31 2022-10-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置
WO2022220084A1 (ja) * 2021-04-15 2022-10-20 ソニーセミコンダクタソリューションズ株式会社 撮像装置
JP2022185900A (ja) * 2021-06-03 2022-12-15 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
JP2023069162A (ja) * 2021-11-05 2023-05-18 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器

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JP2004104203A (ja) * 2002-09-05 2004-04-02 Toshiba Corp 固体撮像装置
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Also Published As

Publication number Publication date
WO2013175742A1 (en) 2013-11-28
US20150091122A1 (en) 2015-04-02
JP2013243324A (ja) 2013-12-05
CN104303305B (zh) 2019-01-25
KR102115046B1 (ko) 2020-05-25
CN104303305A (zh) 2015-01-21
US10074684B2 (en) 2018-09-11
KR20150027044A (ko) 2015-03-11

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