JP6148024B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6148024B2 JP6148024B2 JP2013016496A JP2013016496A JP6148024B2 JP 6148024 B2 JP6148024 B2 JP 6148024B2 JP 2013016496 A JP2013016496 A JP 2013016496A JP 2013016496 A JP2013016496 A JP 2013016496A JP 6148024 B2 JP6148024 B2 JP 6148024B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide semiconductor
- insulating film
- oxide
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013016496A JP6148024B2 (ja) | 2012-02-09 | 2013-01-31 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012026733 | 2012-02-09 | ||
| JP2012026733 | 2012-02-09 | ||
| JP2013016496A JP6148024B2 (ja) | 2012-02-09 | 2013-01-31 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013179284A JP2013179284A (ja) | 2013-09-09 |
| JP2013179284A5 JP2013179284A5 (https=) | 2016-03-17 |
| JP6148024B2 true JP6148024B2 (ja) | 2017-06-14 |
Family
ID=49270624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013016496A Expired - Fee Related JP6148024B2 (ja) | 2012-02-09 | 2013-01-31 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6148024B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6506545B2 (ja) * | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015188062A (ja) | 2014-02-07 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2017081579A1 (en) * | 2015-11-13 | 2017-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US10714633B2 (en) * | 2015-12-15 | 2020-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5128733A (en) * | 1991-05-17 | 1992-07-07 | United Technologies Corporation | Silicon mesa transistor structure |
| JP5111867B2 (ja) * | 2007-01-16 | 2013-01-09 | 株式会社ジャパンディスプレイイースト | 表示装置 |
| WO2011132529A1 (en) * | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2011132591A1 (en) * | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101938726B1 (ko) * | 2010-06-11 | 2019-01-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
-
2013
- 2013-01-31 JP JP2013016496A patent/JP6148024B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013179284A (ja) | 2013-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7427054B2 (ja) | 半導体装置 | |
| JP6184698B2 (ja) | 半導体装置の作製方法 | |
| JP6656334B2 (ja) | 半導体装置 | |
| JP6496439B2 (ja) | 半導体装置 | |
| JP6077868B2 (ja) | 半導体装置の作製方法 | |
| JP6106477B2 (ja) | 半導体装置の作製方法 | |
| JP6140551B2 (ja) | 半導体装置 | |
| JP6230808B2 (ja) | 半導体装置 | |
| JP6128906B2 (ja) | 半導体装置 | |
| KR102112872B1 (ko) | 반도체 장치 및 반도체 장치의 제작 방법 | |
| JP2013175710A (ja) | 半導体装置、及び半導体装置の作製方法 | |
| JP6148024B2 (ja) | 半導体装置 | |
| JP6175244B2 (ja) | 半導体装置およびその作製方法 | |
| JP6131060B2 (ja) | 半導体装置 | |
| JP2017126791A (ja) | 半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160128 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160128 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161222 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161227 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170223 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170418 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170518 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6148024 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |