JP6147276B2 - 広帯域撮像素子 - Google Patents

広帯域撮像素子 Download PDF

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Publication number
JP6147276B2
JP6147276B2 JP2014551322A JP2014551322A JP6147276B2 JP 6147276 B2 JP6147276 B2 JP 6147276B2 JP 2014551322 A JP2014551322 A JP 2014551322A JP 2014551322 A JP2014551322 A JP 2014551322A JP 6147276 B2 JP6147276 B2 JP 6147276B2
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region
visible light
charge storage
pixel
storage region
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JP2015504249A5 (enExample
JP2015504249A (ja
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コーヘン，デーヴィッド
ヤハヴ，ジオラ
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Microsoft Corp
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Microsoft Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/20—Image signal generators
    • H04N13/204—Image signal generators using stereoscopic image cameras
    • H04N13/254—Image signal generators using stereoscopic image cameras in combination with electromagnetic radiation sources for illuminating objects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/20—Image signal generators
    • H04N13/204—Image signal generators using stereoscopic image cameras
    • H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014551322A 2012-01-06 2013-01-03 広帯域撮像素子 Active JP6147276B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/345,130 2012-01-06
US13/345,130 US9264676B2 (en) 2012-01-06 2012-01-06 Broadband imager
PCT/US2013/020182 WO2013103745A1 (en) 2012-01-06 2013-01-03 Broadband imager

Publications (3)

Publication Number Publication Date
JP2015504249A JP2015504249A (ja) 2015-02-05
JP2015504249A5 JP2015504249A5 (enExample) 2016-02-25
JP6147276B2 true JP6147276B2 (ja) 2017-06-14

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014551322A Active JP6147276B2 (ja) 2012-01-06 2013-01-03 広帯域撮像素子

Country Status (6)

Country Link
US (1) US9264676B2 (enExample)
EP (1) EP2801189B1 (enExample)
JP (1) JP6147276B2 (enExample)
KR (1) KR102000321B1 (enExample)
CN (1) CN103236433B (enExample)
WO (1) WO2013103745A1 (enExample)

Cited By (1)

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US12027555B2 (en) 2021-05-10 2024-07-02 United Microelectronics Corp. Image sensor

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JP6130221B2 (ja) * 2013-05-24 2017-05-17 ソニー株式会社 固体撮像装置、および電子機器
KR102277309B1 (ko) * 2014-01-29 2021-07-14 엘지이노텍 주식회사 깊이 정보 추출 장치 및 방법
GB201421512D0 (en) * 2014-12-03 2015-01-14 Melexis Technologies Nv A semiconductor pixel unit for simultaneously sensing visible light and near-infrared light, and a semiconductor sensor comprising same
WO2016098912A1 (ko) * 2014-12-15 2016-06-23 재단법인 다차원 스마트 아이티 융합시스템 연구단 멀티 애퍼처 카메라의 센서 어레이 및 그 동작 방법
US20160255323A1 (en) 2015-02-26 2016-09-01 Dual Aperture International Co. Ltd. Multi-Aperture Depth Map Using Blur Kernels and Down-Sampling
US9887235B2 (en) * 2015-12-11 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Pixel isolation device and fabrication method
WO2017203936A1 (ja) * 2016-05-25 2017-11-30 パナソニック・タワージャズセミコンダクター株式会社 固体撮像素子
JP2018207446A (ja) * 2017-06-09 2018-12-27 オリンパス株式会社 固体撮像素子，当該固体撮像素子を用いた観察装置，固体撮像素子の駆動方法及び駆動用プログラム
KR102673656B1 (ko) 2018-02-05 2024-06-07 삼성전자주식회사 이미지 센서 및 전자 장치
CN108573990A (zh) * 2018-05-15 2018-09-25 德淮半导体有限公司 半导体装置及其制造方法
US11473969B2 (en) 2018-08-09 2022-10-18 Ouster, Inc. Channel-specific micro-optics for optical arrays
US10739189B2 (en) * 2018-08-09 2020-08-11 Ouster, Inc. Multispectral ranging/imaging sensor arrays and systems
JP2021534412A (ja) 2018-08-16 2021-12-09 センス・フォトニクス, インコーポレイテッドSense Photonics, Inc. 統合されたｌｉｄａｒ画像センサデバイス及びシステム並びに関連した動作方法
CN110505376B (zh) * 2019-05-31 2021-04-30 杭州海康威视数字技术股份有限公司 图像采集装置及方法
CN110429093A (zh) * 2019-08-05 2019-11-08 德淮半导体有限公司 图像传感器及其制造方法
WO2021174425A1 (zh) * 2020-03-03 2021-09-10 华为技术有限公司 图像传感器和图像感光方法
CN111355901B (zh) * 2020-03-14 2025-02-28 北京大学深圳研究生院 光电传感器、像素电路、图像传感器及光电感测方法
CN111584673A (zh) * 2020-05-22 2020-08-25 成都天马微电子有限公司 传感器、传感器的制造方法及电子设备
CN114335031A (zh) * 2020-09-28 2022-04-12 宁波飞芯电子科技有限公司 图像传感器及像素电路
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US12027555B2 (en) 2021-05-10 2024-07-02 United Microelectronics Corp. Image sensor
US12142624B2 (en) 2021-05-10 2024-11-12 United Microelectronics Corp. Image sensor
US12262564B2 (en) 2021-05-10 2025-03-25 United Microelectronics Corp. Image sensor

Also Published As

Publication number Publication date
US20130176396A1 (en) 2013-07-11
KR20140111017A (ko) 2014-09-17
US9264676B2 (en) 2016-02-16
CN103236433B (zh) 2016-01-27
KR102000321B1 (ko) 2019-07-15
EP2801189A4 (en) 2015-08-05
WO2013103745A1 (en) 2013-07-11
EP2801189B1 (en) 2016-03-16
CN103236433A (zh) 2013-08-07
EP2801189A1 (en) 2014-11-12
JP2015504249A (ja) 2015-02-05

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