JP2015504249A - 広帯域撮像素子 - Google Patents
広帯域撮像素子 Download PDFInfo
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- JP2015504249A JP2015504249A JP2014551322A JP2014551322A JP2015504249A JP 2015504249 A JP2015504249 A JP 2015504249A JP 2014551322 A JP2014551322 A JP 2014551322A JP 2014551322 A JP2014551322 A JP 2014551322A JP 2015504249 A JP2015504249 A JP 2015504249A
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- 230000003287 optical effect Effects 0.000 claims description 26
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- 238000012546 transfer Methods 0.000 claims description 17
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
- H04N13/20—Image signal generators
- H04N13/204—Image signal generators using stereoscopic image cameras
- H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
- H04N13/20—Image signal generators
- H04N13/204—Image signal generators using stereoscopic image cameras
- H04N13/254—Image signal generators using stereoscopic image cameras in combination with electromagnetic radiation sources for illuminating objects
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (10)
- 基板内に可視光に対して感受性のある少なくとも1つの領域を有した少なくとも1つの可視光ピクセルと、
前記基板内に赤外(IR)光に対して感受性のある領域を有したIRピクセルであって、前記IR感受性領域は前記少なくとも1つの可視光感受性領域の下方にある、IRピクセルと、
前記IR感受性領域で発生した電荷を蓄積するための電荷蓄積領域と、
前記IR感受性領域で発生した前記電荷を蓄積するように電圧を供給するための、前記電荷蓄積領域の上方にある電極と、
を備えた半導体光センサー。 - 前記電荷蓄積領域と前記少なくとも1つの可視光感受性領域との間にある少なくとも1つのウェルを更に備えた請求項1に記載の半導体光センサー。
- 前記少なくとも1つのウェルはpウェルである請求項1に記載の半導体光センサー。
- 前記少なくとも1つの可視ピクセルと前記IRピクセルの上に位置し可視光及びIR光を通す少なくとも1つのフィルターを更に備えた請求項1に記載の半導体光センサー。
- 異なる色の3つの可視光ピクセルとIRピクセルのための1つの電荷蓄積領域とからなる複数のグループを含んだパターンとして配置された請求項1に記載の半導体光センサー。
- 前記グループ内の前記3つの可視光ピクセルは、緑色ピクセル、青色ピクセル、及び赤色ピクセルを含み、前記緑色ピクセルは前記赤色ピクセルと前記青色ピクセルの約2倍の表面積である、請求項5に記載の半導体光センサー。
- 前記IR収集領域は前記可視ピクセルのいずれよりも小さい表面積にわたっている請求項6に記載の半導体光センサー。
- 前記電荷蓄積領域に関係したIR光感受性領域は複数の異なる可視光ピクセルの部分の下に有効収集領域を有している請求項5に記載の半導体光センサー。
- 前記電極を覆う光学シールドを更に備えた請求項1に記載の半導体光センサー。
- 半導体光センサーを動作させる方法であって、
少なくとも1つの可視光感受性領域の下方にあるIR感受性領域で発生した電荷を蓄積するための信号を、第1電荷蓄積領域の上方にある光ゲートに供給するステップと、
前記第1電荷蓄積領域からIR光感知ノードへ電荷を移動させるための信号を、第1転送ゲートに供給するステップと、
前記少なくとも1つの可視光ピクセルの第2電荷収集領域から第1可視光ピクセル用の可視光感知ノードへ電荷を移動させるための信号を、第2転送ゲートに供給するステップと、
前記IR光感知ノードと前記可視光感知ノードを読み取るステップと、
を含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/345,130 US9264676B2 (en) | 2012-01-06 | 2012-01-06 | Broadband imager |
US13/345,130 | 2012-01-06 | ||
PCT/US2013/020182 WO2013103745A1 (en) | 2012-01-06 | 2013-01-03 | Broadband imager |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015504249A true JP2015504249A (ja) | 2015-02-05 |
JP2015504249A5 JP2015504249A5 (ja) | 2016-02-25 |
JP6147276B2 JP6147276B2 (ja) | 2017-06-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014551322A Active JP6147276B2 (ja) | 2012-01-06 | 2013-01-03 | 広帯域撮像素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9264676B2 (ja) |
EP (1) | EP2801189B1 (ja) |
JP (1) | JP6147276B2 (ja) |
KR (1) | KR102000321B1 (ja) |
CN (1) | CN103236433B (ja) |
WO (1) | WO2013103745A1 (ja) |
Cited By (1)
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JP2023516410A (ja) * | 2020-03-03 | 2023-04-19 | ホアウェイ・テクノロジーズ・カンパニー・リミテッド | イメージセンサおよびイメージ光感知方法 |
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CN103229509B (zh) * | 2010-02-19 | 2016-08-17 | 双光圈国际株式会社 | 处理多孔径像数据 |
JP6251962B2 (ja) * | 2012-03-01 | 2017-12-27 | 日産自動車株式会社 | カメラ装置及び画像処理方法 |
JP6130221B2 (ja) * | 2013-05-24 | 2017-05-17 | ソニー株式会社 | 固体撮像装置、および電子機器 |
KR102277309B1 (ko) * | 2014-01-29 | 2021-07-14 | 엘지이노텍 주식회사 | 깊이 정보 추출 장치 및 방법 |
GB201421512D0 (en) * | 2014-12-03 | 2015-01-14 | Melexis Technologies Nv | A semiconductor pixel unit for simultaneously sensing visible light and near-infrared light, and a semiconductor sensor comprising same |
WO2016098912A1 (ko) * | 2014-12-15 | 2016-06-23 | 재단법인 다차원 스마트 아이티 융합시스템 연구단 | 멀티 애퍼처 카메라의 센서 어레이 및 그 동작 방법 |
US20160255323A1 (en) | 2015-02-26 | 2016-09-01 | Dual Aperture International Co. Ltd. | Multi-Aperture Depth Map Using Blur Kernels and Down-Sampling |
US9887235B2 (en) * | 2015-12-11 | 2018-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pixel isolation device and fabrication method |
WO2017203936A1 (ja) * | 2016-05-25 | 2017-11-30 | パナソニック・タワージャズセミコンダクター株式会社 | 固体撮像素子 |
JP2018207446A (ja) * | 2017-06-09 | 2018-12-27 | オリンパス株式会社 | 固体撮像素子,当該固体撮像素子を用いた観察装置,固体撮像素子の駆動方法及び駆動用プログラム |
KR102673656B1 (ko) | 2018-02-05 | 2024-06-07 | 삼성전자주식회사 | 이미지 센서 및 전자 장치 |
CN108573990A (zh) * | 2018-05-15 | 2018-09-25 | 德淮半导体有限公司 | 半导体装置及其制造方法 |
CN110505376B (zh) * | 2019-05-31 | 2021-04-30 | 杭州海康威视数字技术股份有限公司 | 图像采集装置及方法 |
CN110429093A (zh) * | 2019-08-05 | 2019-11-08 | 德淮半导体有限公司 | 图像传感器及其制造方法 |
CN111584673A (zh) * | 2020-05-22 | 2020-08-25 | 成都天马微电子有限公司 | 传感器、传感器的制造方法及电子设备 |
EP3979322A1 (en) * | 2020-09-30 | 2022-04-06 | AMS Sensors Belgium BVBA | Pixel structure and method for manufacturing a pixel structure |
CN115332274A (zh) * | 2021-05-10 | 2022-11-11 | 联华电子股份有限公司 | 影像传感器 |
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2012
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2013
- 2013-01-03 KR KR1020147021920A patent/KR102000321B1/ko active IP Right Grant
- 2013-01-03 JP JP2014551322A patent/JP6147276B2/ja active Active
- 2013-01-03 EP EP13733569.1A patent/EP2801189B1/en active Active
- 2013-01-03 WO PCT/US2013/020182 patent/WO2013103745A1/en active Application Filing
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Publication number | Publication date |
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EP2801189A4 (en) | 2015-08-05 |
WO2013103745A1 (en) | 2013-07-11 |
EP2801189B1 (en) | 2016-03-16 |
CN103236433A (zh) | 2013-08-07 |
KR102000321B1 (ko) | 2019-07-15 |
JP6147276B2 (ja) | 2017-06-14 |
KR20140111017A (ko) | 2014-09-17 |
US9264676B2 (en) | 2016-02-16 |
EP2801189A1 (en) | 2014-11-12 |
CN103236433B (zh) | 2016-01-27 |
US20130176396A1 (en) | 2013-07-11 |
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