JP6147276B2 - 広帯域撮像素子 - Google Patents
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- H01L27/144—Devices controlled by radiation
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
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- H—ELECTRICITY
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- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
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- H—ELECTRICITY
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- Solid State Image Pick-Up Elements (AREA)
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Description
Claims (10)
- それぞれが基板内に可視光感受性領域を有した少なくとも1つの可視光ピクセルと、
前記基板内に赤外(IR)光感受性領域を有したIRピクセルであって、前記IR光感受性領域は、少なくとも1つの可視光ピクセルの前記可視光感受性領域の下方にある、IRピクセルと、
前記基板内の電荷蓄積領域と、
前記電荷蓄積領域と少なくとも1つの可視光ピクセルの前記可視光感受性領域の間にある前記基板内のウェルであって、前記ウェルは、前記電荷蓄積領域と少なくとも1つの可視光ピクセルの前記可視光感受性領域の間に電気的な絶縁を与えるように構成される、ウェルと、
前記IR光感受性領域で発生した電荷を蓄積するためのポテンシャル井戸を前記電荷蓄積領域内に生じさせる電圧を供給するように構成された、前記電荷蓄積領域の上方にある電極と、
を備えた半導体光センサー。 - 前記ウェルはpウェルである、請求項1に記載の半導体光センサー。
- 少なくとも1つの可視光ピクセルの前記可視光感受性領域と前記IRピクセルの前記IR光感受性領域の少なくとも一部分の上に位置し、可視光及びIR光を通すように構成されたフィルターを更に備えた請求項1に記載の半導体光センサー。
- 異なる色の3つの可視光ピクセルと、IRピクセルのための1つの電荷蓄積領域とからなる複数のグループを含んだパターンとして配置された請求項1に記載の半導体光センサー。
- 前記グループ内の前記3つの可視光ピクセルは、緑色ピクセル、青色ピクセル、及び赤色ピクセルを含み、前記緑色ピクセルは、前記赤色ピクセルと前記青色ピクセルの約2倍の表面積である、請求項4に記載の半導体光センサー。
- 前記電荷蓄積領域は、前記可視光ピクセルのいずれよりも小さい表面積にわたっている、請求項5に記載の半導体光センサー。
- 前記電荷蓄積領域に関係した前記IR光感受性領域は、複数の異なる可視光ピクセルの部分の下に有効収集領域を有している、請求項4に記載の半導体光センサー。
- 前記電極を覆う光学シールドを更に備えた請求項1に記載の半導体光センサー。
- 半導体光センサーを動作させる方法であって、
基板の電荷蓄積領域にポテンシャル井戸を生成するための高電位を、前記電荷蓄積領域の上方にある光ゲートに供給するステップであって、前記電荷蓄積領域は、前記基板のpウェルによって囲まれており、前記ポテンシャル井戸は、前記基板の可視光感受性領域の下方にある前記基板のIR光感受性領域で発生した電荷を蓄積する、ステップと、
前記電荷蓄積領域からIR光感知ノードへ電荷を移動させるための信号を、第1転送ゲートに供給するステップと、
前記可視光感受性領域から第1可視光ピクセル用の可視光感知ノードへ電荷を移動させるための信号を、第2転送ゲートに供給するステップであって、前記電荷蓄積領域は、前記電荷蓄積領域と前記可視光感受性領域との間に電気的な絶縁を与える前記pウェルによって前記可視光感受性領域から離れている、ステップと、
前記IR光感知ノードと前記可視光感知ノードを読み取るステップと、
を含む方法。 - 半導体光センサーアレイを備えた3D深度カメラであって、前記半導体光センサーアレイは、
それぞれが基板内にフォトダイオードを含んだ複数の可視光ピクセルと、
それぞれが前記フォトダイオードの少なくとも1つの少なくとも一部分の下方において前記基板内に赤外(IR)光感受性領域を含んだ複数のIRピクセルと、
前記IRピクセルのそれぞれに関連する、前記基板内の電荷蓄積領域であって、前記関連するIRピクセルの前記IR光感受性領域で発生した電荷を蓄積するように構成された電荷蓄積領域と、
前記電荷蓄積領域のそれぞれに関連するpウェル領域であって、各pウェル領域は、前記関連する電荷蓄積領域を1又は複数の隣接したフォトダイオードから分離するように構成され、前記pウェル領域は、前記関連する電荷蓄積領域と前記1又は複数の隣接したフォトダイオードとの間に電気的な絶縁を与えるように構成される、pウェル領域と、
前記電荷蓄積領域のそれぞれに関連する光ゲートであって、前記IR光感受性領域で発生した電荷を前記関連する蓄積領域に蓄積するためのポテンシャル井戸を、前記電荷蓄積領域の内部に生じさせる電圧を供給するように構成された光ゲートと、
を含む、3D深度カメラ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US13/345,130 US9264676B2 (en) | 2012-01-06 | 2012-01-06 | Broadband imager |
US13/345,130 | 2012-01-06 | ||
PCT/US2013/020182 WO2013103745A1 (en) | 2012-01-06 | 2013-01-03 | Broadband imager |
Publications (3)
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JP2015504249A JP2015504249A (ja) | 2015-02-05 |
JP2015504249A5 JP2015504249A5 (ja) | 2016-02-25 |
JP6147276B2 true JP6147276B2 (ja) | 2017-06-14 |
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Country Status (6)
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US (1) | US9264676B2 (ja) |
EP (1) | EP2801189B1 (ja) |
JP (1) | JP6147276B2 (ja) |
KR (1) | KR102000321B1 (ja) |
CN (1) | CN103236433B (ja) |
WO (1) | WO2013103745A1 (ja) |
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US12027555B2 (en) | 2021-05-10 | 2024-07-02 | United Microelectronics Corp. | Image sensor |
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