CN103236433B - 宽带成像仪 - Google Patents

宽带成像仪 Download PDF

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Publication number
CN103236433B
CN103236433B CN201310002216.7A CN201310002216A CN103236433B CN 103236433 B CN103236433 B CN 103236433B CN 201310002216 A CN201310002216 A CN 201310002216A CN 103236433 B CN103236433 B CN 103236433B
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China
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pixel
visible ray
light
region
charge accumulation
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CN201310002216.7A
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Chinese (zh)
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CN103236433A (zh
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D·科恩
G·叶海弗
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Microsoft Technology Licensing LLC
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Microsoft Technology Licensing LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/20—Image signal generators
    • H04N13/204—Image signal generators using stereoscopic image cameras
    • H04N13/254—Image signal generators using stereoscopic image cameras in combination with electromagnetic radiation sources for illuminating objects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/20—Image signal generators
    • H04N13/204—Image signal generators using stereoscopic image cameras
    • H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201310002216.7A 2012-01-06 2013-01-04 宽带成像仪 Active CN103236433B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/345,130 2012-01-06
US13/345,130 US9264676B2 (en) 2012-01-06 2012-01-06 Broadband imager

Publications (2)

Publication Number Publication Date
CN103236433A CN103236433A (zh) 2013-08-07
CN103236433B true CN103236433B (zh) 2016-01-27

Family

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Family Applications (1)

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CN201310002216.7A Active CN103236433B (zh) 2012-01-06 2013-01-04 宽带成像仪

Country Status (6)

Country Link
US (1) US9264676B2 (enExample)
EP (1) EP2801189B1 (enExample)
JP (1) JP6147276B2 (enExample)
KR (1) KR102000321B1 (enExample)
CN (1) CN103236433B (enExample)
WO (1) WO2013103745A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5670481B2 (ja) * 2010-02-19 2015-02-18 デュアル・アパーチャー・インコーポレーテッド 多開口画像データの処理
JP6251962B2 (ja) * 2012-03-01 2017-12-27 日産自動車株式会社 カメラ装置及び画像処理方法
JP6130221B2 (ja) * 2013-05-24 2017-05-17 ソニー株式会社 固体撮像装置、および電子機器
KR102277309B1 (ko) * 2014-01-29 2021-07-14 엘지이노텍 주식회사 깊이 정보 추출 장치 및 방법
GB201421512D0 (en) * 2014-12-03 2015-01-14 Melexis Technologies Nv A semiconductor pixel unit for simultaneously sensing visible light and near-infrared light, and a semiconductor sensor comprising same
WO2016098912A1 (ko) * 2014-12-15 2016-06-23 재단법인 다차원 스마트 아이티 융합시스템 연구단 멀티 애퍼처 카메라의 센서 어레이 및 그 동작 방법
US20160255323A1 (en) 2015-02-26 2016-09-01 Dual Aperture International Co. Ltd. Multi-Aperture Depth Map Using Blur Kernels and Down-Sampling
US9887235B2 (en) * 2015-12-11 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Pixel isolation device and fabrication method
WO2017203936A1 (ja) * 2016-05-25 2017-11-30 パナソニック・タワージャズセミコンダクター株式会社 固体撮像素子
JP2018207446A (ja) * 2017-06-09 2018-12-27 オリンパス株式会社 固体撮像素子，当該固体撮像素子を用いた観察装置，固体撮像素子の駆動方法及び駆動用プログラム
KR102673656B1 (ko) 2018-02-05 2024-06-07 삼성전자주식회사 이미지 센서 및 전자 장치
CN108573990A (zh) * 2018-05-15 2018-09-25 德淮半导体有限公司 半导体装置及其制造方法
US11473969B2 (en) 2018-08-09 2022-10-18 Ouster, Inc. Channel-specific micro-optics for optical arrays
US10739189B2 (en) * 2018-08-09 2020-08-11 Ouster, Inc. Multispectral ranging/imaging sensor arrays and systems
JP2021534412A (ja) 2018-08-16 2021-12-09 センス・フォトニクス, インコーポレイテッドSense Photonics, Inc. 統合されたｌｉｄａｒ画像センサデバイス及びシステム並びに関連した動作方法
CN110505376B (zh) * 2019-05-31 2021-04-30 杭州海康威视数字技术股份有限公司 图像采集装置及方法
CN110429093A (zh) * 2019-08-05 2019-11-08 德淮半导体有限公司 图像传感器及其制造方法
WO2021174425A1 (zh) * 2020-03-03 2021-09-10 华为技术有限公司 图像传感器和图像感光方法
CN111355901B (zh) * 2020-03-14 2025-02-28 北京大学深圳研究生院 光电传感器、像素电路、图像传感器及光电感测方法
CN111584673A (zh) * 2020-05-22 2020-08-25 成都天马微电子有限公司 传感器、传感器的制造方法及电子设备
CN114335031A (zh) * 2020-09-28 2022-04-12 宁波飞芯电子科技有限公司 图像传感器及像素电路
EP3979322A1 (en) * 2020-09-30 2022-04-06 AMS Sensors Belgium BVBA Pixel structure and method for manufacturing a pixel structure
CN115332274A (zh) * 2021-05-10 2022-11-11 联华电子股份有限公司 影像传感器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1377181A (zh) * 2001-03-05 2002-10-30 佳能株式会社 图象拾取模块以及图象拾取设备
US6704050B1 (en) * 1999-04-23 2004-03-09 Polaroid Corporation Active-pixel image sensing device with linear mode voltage to current conversion

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6324296B1 (en) 1997-12-04 2001-11-27 Phasespace, Inc. Distributed-processing motion tracking system for tracking individually modulated light points
US6198147B1 (en) 1998-07-06 2001-03-06 Intel Corporation Detecting infrared and visible light
US7224384B1 (en) 1999-09-08 2007-05-29 3Dv Systems Ltd. 3D imaging system
US7154157B2 (en) 2002-12-30 2006-12-26 Intel Corporation Stacked semiconductor radiation sensors having color component and infrared sensing capability
US7477304B2 (en) 2004-08-26 2009-01-13 Micron Technology, Inc. Two narrow band and one wide band color filter for increasing color image sensor sensitivity
WO2006127971A2 (en) 2005-05-26 2006-11-30 Araz Yacoubian Broadband imager
US7714368B2 (en) 2006-06-26 2010-05-11 Aptina Imaging Corporation Method and apparatus providing imager pixel array with grating structure and imager device containing the same
JP2008078258A (ja) * 2006-09-20 2008-04-03 Sharp Corp 固体撮像装置
KR100863497B1 (ko) 2007-06-19 2008-10-14 마루엘에스아이 주식회사 이미지 감지 장치, 이미지 신호 처리 방법, 광 감지 소자, 제어 방법 및 화소 어레이
US8446470B2 (en) 2007-10-04 2013-05-21 Magna Electronics, Inc. Combined RGB and IR imaging sensor
KR101475464B1 (ko) 2008-05-09 2014-12-22 삼성전자 주식회사 적층형 이미지 센서
US8773352B1 (en) * 2008-07-16 2014-07-08 Bby Solutions, Inc. Systems and methods for gesture recognition for input device applications
JP2010056345A (ja) * 2008-08-28 2010-03-11 Brookman Technology Inc 増幅型固体撮像装置
US8436909B2 (en) * 2008-10-21 2013-05-07 Stmicroelectronics S.R.L. Compound camera sensor and related method of processing digital images
US7915652B2 (en) 2008-10-24 2011-03-29 Sharp Laboratories Of America, Inc. Integrated infrared and color CMOS imager sensor
TWI445166B (zh) 2008-11-07 2014-07-11 Sony Corp 固態成像裝置，製造固態成像裝置之方法、及電子設備
KR20110040402A (ko) * 2009-10-14 2011-04-20 삼성전자주식회사 필터 어레이, 이를 포함하는 이미지 센서, 및 신호 보간 방법
JP2011166477A (ja) * 2010-02-10 2011-08-25 Konica Minolta Opto Inc 固体撮像素子及び画像入力装置
JP2011243862A (ja) * 2010-05-20 2011-12-01 Sony Corp 撮像デバイス及び撮像装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6704050B1 (en) * 1999-04-23 2004-03-09 Polaroid Corporation Active-pixel image sensing device with linear mode voltage to current conversion
CN1377181A (zh) * 2001-03-05 2002-10-30 佳能株式会社 图象拾取模块以及图象拾取设备

Also Published As

Publication number Publication date
US20130176396A1 (en) 2013-07-11
JP6147276B2 (ja) 2017-06-14
KR20140111017A (ko) 2014-09-17
US9264676B2 (en) 2016-02-16
KR102000321B1 (ko) 2019-07-15
EP2801189A4 (en) 2015-08-05
WO2013103745A1 (en) 2013-07-11
EP2801189B1 (en) 2016-03-16
CN103236433A (zh) 2013-08-07
EP2801189A1 (en) 2014-11-12
JP2015504249A (ja) 2015-02-05

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