JP6141197B2 - 三次元構造を製造する方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000002245 particle Substances 0.000 claims description 148
- 239000000758 substrate Substances 0.000 claims description 34
- 238000000576 coating method Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000001746 injection moulding Methods 0.000 description 3
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- 238000010884 ion-beam technique Methods 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
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- 239000012811 non-conductive material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81C99/00—Subject matter not provided for in other groups of this subclass
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- B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/03—Processes for manufacturing substrate-free structures
- B81C2201/034—Moulding
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249955—Void-containing component partially impregnated with adjacent component
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- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Measuring Fluid Pressure (AREA)
- Chemical Vapour Deposition (AREA)
- Pressure Sensors (AREA)
- Powder Metallurgy (AREA)
Description
Claims (16)
- 三次元構造を製造する方法であって、
複数の粒子が担体要素に配置又は塗布され、前記複数の粒子の間に形成される複数の空洞が少なくとも一部相互結合され、前記複数の粒子が互いに接点において接触する段階と、
前記複数の粒子及び前記担体要素を被覆する被覆工程によって、前記複数の粒子を互いに前記接点において接続させる段階と、
を備え、
前記被覆工程の前に、前記複数の粒子が、互いにゆるく接触した状態に配置され、
前記被覆工程で形成される層が、前記複数の空洞の少なくとも一部に入り込み、
前記層が、1原子層から5μmの間の厚みを有し、
前記複数の粒子は、ランダムな方向及びランダムな配列で塗布される又は配置され、
前記複数の粒子は、前記複数の粒子が接続される時に、基本的に不可逆的に変形せず、
前記複数の粒子が被覆され接続された後に、前記担体要素が、少なくとも部分的に取り除かれる、
方法。 - 三次元構造を製造する方法であって、
複数の粒子が担体要素に配置又は塗布され、前記複数の粒子の間に形成される複数の空洞が少なくとも一部相互結合され、前記複数の粒子が互いに接点において接触する段階と、
前記複数の粒子の一粒子あたりの平均体積の少なくとも10倍の大きさの要素を埋め込む段階と、
前記複数の粒子及び前記担体要素を被覆する被覆工程によって、前記複数の粒子を互いに前記接点において接続させる段階と、
を備え、
前記被覆工程で形成される層が、前記複数の空洞の少なくとも一部に入り込み、
前記被覆工程の間に、前記要素が、前記複数の粒子及び前記担体要素と接続される、
方法。 - 三次元構造を製造する方法であって、
複数の粒子が担体要素に配置又は塗布され、前記複数の粒子の間に形成される複数の空洞が少なくとも一部相互結合され、前記複数の粒子が互いに接点において接触する段階と、
前記複数の粒子及び前記担体要素を被覆する被覆工程によって、前記複数の粒子を互いに前記接点において接続させる段階と、
前記複数の粒子が被覆され接続された後に、前記担体要素を、少なくとも部分的に取り除く段階と、
を備え、
前記被覆工程で形成される層が、前記複数の空洞の少なくとも一部に入り込み、
前記担体要素の一部が取り除かれた後に、接続された前記複数の粒子が、前記担体要素の残りの部分上で自己支持構造を形成する、又は、自己支持膜を形成する、
方法。 - 前記担体要素が完全に取り除かれ、接続された前記複数の粒子が、異なる基板に移される段階を更に備える、
請求項3に記載の方法。 - 前記被覆工程が、化学気相成長法法(CVD)によって実行される、
請求項1から請求項4までの何れか一項に記載の方法。 - 前記複数の粒子及び/又は前記担体要素は、少なくとも100℃の耐熱性を有する、
請求項1から請求項5までの何れか一項に記載の方法。 - 前記複数の粒子が接続される時に、前記複数の粒子が基本的に不可逆的に変形しない、
請求項2から請求項6までの何れか一項に記載の方法。 - 少なくとも2つの異なる材料で形成される前記複数の粒子の混合物が配置される、
請求項1から請求項7までの何れか一項に記載の方法。 - 塗布された又は配置された前記複数の粒子の基本的に全てが、前記層によって互いに接続される、
請求項1から請求項8までの何れか一項に記載の方法。 - 前記被覆工程の前に、前記複数の粒子が互いにゆるく接触した状態に配置される、
請求項2から請求項9までの何れか一項に記載の方法。 - 配置された又は塗布された高さ構造を有する基板を用意する段階を更に備え、
凹部もしくは空洞部、及び/又は、基板に設けられた構造化層が、前記担体要素として使用される、
請求項1から請求項10までの何れか一項に記載の方法。 - 前記基板は、シリコン、ガラス又はセラミックで形成されている、
請求項11に記載の方法。 - 前記複数の粒子及び前記担体要素が被覆された後に、カバー層を設ける段階を更に備え、
請求項1から請求項12までの何れか一項に記載の方法。 - 別の材料を、接続された前記複数の粒子に塗布する段階を更に備え、
接続された前記複数の粒子の少なくとも一部が、後で取り除かれる、
請求項1から請求項13までの何れか一項に記載の方法。 - 前記被覆工程の間に、安定した不揮発性層が形成され、
請求項1から請求項14までの何れか一項に記載の方法。 - 前記複数の粒子が被覆され接続された後に、複数の粒子が被覆されずに残っている場合、前記被覆されていない複数の粒子が、少なくとも部分的に取り除かれる、
請求項1及び3から15までの何れか一項に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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DE102011010899.8 | 2011-02-04 | ||
DE201110010899 DE102011010899A1 (de) | 2011-02-04 | 2011-02-04 | Verfahren zum Erzeugen einer dreidimensionalen Struktur sowie dreidimensionale Struktur |
PCT/EP2012/000696 WO2012104106A1 (de) | 2011-02-04 | 2012-02-03 | Verfahren zum erzeugen einer dreidimensionalen struktur sowie dreidimensionale struktur |
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JP2014511433A JP2014511433A (ja) | 2014-05-15 |
JP6141197B2 true JP6141197B2 (ja) | 2017-06-07 |
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US (1) | US9221217B2 (ja) |
EP (1) | EP2670880B1 (ja) |
JP (1) | JP6141197B2 (ja) |
DE (1) | DE102011010899A1 (ja) |
WO (1) | WO2012104106A1 (ja) |
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DE102014226138A1 (de) * | 2014-12-16 | 2016-06-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen einer Vorrichtung mit einer dreidimensionalen magnetischen Struktur |
DE102015206377A1 (de) * | 2015-04-09 | 2016-10-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung mit einer vielzahl von partikeln und verfahren zum herstellen derselben |
DE102016106841B3 (de) * | 2015-12-18 | 2017-03-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Konverter zur Erzeugung eines Sekundärlichts aus einem Primärlicht, Leuchtmittel, die solche Konverter enthalten, sowie Verfahren zur Herstellung der Konverter und Leuchtmittel |
DE102016215617A1 (de) | 2016-08-19 | 2018-02-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen eines Hohlraums mit poröser Struktur |
DE102016215616B4 (de) * | 2016-08-19 | 2020-02-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen einer magnetischen Struktur und Vorrichtung |
DE102016119031A1 (de) | 2016-10-07 | 2018-04-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Wärmeisoliertes Mikrosystem |
US10886437B2 (en) | 2016-11-03 | 2021-01-05 | Lumileds Llc | Devices and structures bonded by inorganic coating |
DE102019201744B4 (de) * | 2018-12-04 | 2020-06-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mems-schallwandler |
DE102019201889A1 (de) | 2019-02-13 | 2020-08-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | MEMS und Verfahren zum Herstellen desselben |
DE102019210177B4 (de) | 2019-07-10 | 2021-05-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen einer gegenläufig magnetisierten Magnetstruktur |
DE102019212091A1 (de) | 2019-08-13 | 2021-02-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mikrosystem und verfahren zum herstellen desselben |
DE102020209525A1 (de) | 2020-07-29 | 2022-02-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren zum Befüllen von Mikrokavitäten |
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DE10114306B4 (de) * | 2001-03-23 | 2005-06-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Kompositschicht, Verfahren zur Herstellung einer Kompositschicht und deren Verwendung |
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JP4334972B2 (ja) * | 2003-10-24 | 2009-09-30 | 株式会社リコー | 三次元周期構造体の製造方法 |
US7253104B2 (en) * | 2003-12-01 | 2007-08-07 | Micron Technology, Inc. | Methods of forming particle-containing materials |
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US8273407B2 (en) * | 2006-01-30 | 2012-09-25 | Bergendahl Albert S | Systems and methods for forming magnetic nanocomposite materials |
WO2008100963A1 (en) * | 2007-02-12 | 2008-08-21 | Lotus Applied Technology, Llc | Fabrication of composite materials using atomic layer deposition |
DE102007029445A1 (de) * | 2007-06-22 | 2008-12-24 | Werner A. Goedel | Verfahren zur Darstellung hierarchisch strukturierter Filme mittels Inkjet-Druck |
US8071160B2 (en) * | 2007-10-29 | 2011-12-06 | Integrated Surface Technologies | Surface coating process |
EP2687365B1 (en) * | 2007-12-27 | 2019-02-20 | Lockheed Martin Corporation | Method for fabricating refractory metal carbides |
US9601234B2 (en) * | 2011-01-06 | 2017-03-21 | The Board Of Trustees Of The University Of Illinois | Three-dimensional (3D) porous device and method of making a 3D porous device |
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- 2012-02-03 EP EP12705067.2A patent/EP2670880B1/de active Active
- 2012-02-03 US US13/983,637 patent/US9221217B2/en active Active
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DE102011010899A1 (de) | 2012-08-09 |
WO2012104106A1 (de) | 2012-08-09 |
EP2670880B1 (de) | 2018-07-18 |
EP2670880A1 (de) | 2013-12-11 |
US9221217B2 (en) | 2015-12-29 |
JP2014511433A (ja) | 2014-05-15 |
US20140023849A1 (en) | 2014-01-23 |
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