JP6135275B2 - 保護膜形成用スパッタリングターゲット - Google Patents
保護膜形成用スパッタリングターゲット Download PDFInfo
- Publication number
- JP6135275B2 JP6135275B2 JP2013089721A JP2013089721A JP6135275B2 JP 6135275 B2 JP6135275 B2 JP 6135275B2 JP 2013089721 A JP2013089721 A JP 2013089721A JP 2013089721 A JP2013089721 A JP 2013089721A JP 6135275 B2 JP6135275 B2 JP 6135275B2
- Authority
- JP
- Japan
- Prior art keywords
- mass
- protective film
- sputtering target
- film
- wiring film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000001681 protective effect Effects 0.000 title claims description 90
- 238000005477 sputtering target Methods 0.000 title claims description 53
- 230000015572 biosynthetic process Effects 0.000 title description 19
- 239000012535 impurity Substances 0.000 claims description 7
- 239000010949 copper Substances 0.000 description 64
- 238000005530 etching Methods 0.000 description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 23
- 229910052802 copper Inorganic materials 0.000 description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 18
- 238000002845 discoloration Methods 0.000 description 14
- 239000011572 manganese Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 239000011701 zinc Substances 0.000 description 14
- 238000011156 evaluation Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 229910000881 Cu alloy Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000005097 cold rolling Methods 0.000 description 5
- 238000005098 hot rolling Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VMWYVTOHEQQZHQ-UHFFFAOYSA-N methylidynenickel Chemical compound [Ni]#[C] VMWYVTOHEQQZHQ-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C18/00—Alloys based on zinc
- C22C18/02—Alloys based on zinc with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
- C22C30/02—Alloys containing less than 50% by weight of each constituent containing copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
- C22C30/06—Alloys containing less than 50% by weight of each constituent containing zinc
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/04—Alloys based on copper with zinc as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12778—Alternative base metals from diverse categories
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013089721A JP6135275B2 (ja) | 2013-04-22 | 2013-04-22 | 保護膜形成用スパッタリングターゲット |
US14/247,591 US10538059B2 (en) | 2013-04-22 | 2014-04-08 | Sputtering target for forming protective film, and laminated wiring film |
TW103113232A TWI627295B (zh) | 2013-04-22 | 2014-04-10 | 保護膜形成用濺射靶及層疊配線膜 |
CN201410151582.3A CN104109837B (zh) | 2013-04-22 | 2014-04-15 | 保护膜形成用溅射靶及层叠配线膜 |
KR1020140045869A KR102220851B1 (ko) | 2013-04-22 | 2014-04-17 | 보호막 형성용 스퍼터링 타깃 및 적층 배선막 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013089721A JP6135275B2 (ja) | 2013-04-22 | 2013-04-22 | 保護膜形成用スパッタリングターゲット |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014214318A JP2014214318A (ja) | 2014-11-17 |
JP6135275B2 true JP6135275B2 (ja) | 2017-05-31 |
Family
ID=51706821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013089721A Expired - Fee Related JP6135275B2 (ja) | 2013-04-22 | 2013-04-22 | 保護膜形成用スパッタリングターゲット |
Country Status (5)
Country | Link |
---|---|
US (1) | US10538059B2 (zh) |
JP (1) | JP6135275B2 (zh) |
KR (1) | KR102220851B1 (zh) |
CN (1) | CN104109837B (zh) |
TW (1) | TWI627295B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5979034B2 (ja) | 2013-02-14 | 2016-08-24 | 三菱マテリアル株式会社 | 保護膜形成用スパッタリングターゲット |
CN104685977B (zh) * | 2013-05-13 | 2016-09-28 | 株式会社爱发科 | 装载装置及其制造方法 |
JP5757318B2 (ja) * | 2013-11-06 | 2015-07-29 | 三菱マテリアル株式会社 | 保護膜形成用スパッタリングターゲットおよび積層配線膜 |
JP6384267B2 (ja) * | 2014-10-24 | 2018-09-05 | 大同特殊鋼株式会社 | 積層体 |
JP6250614B2 (ja) * | 2015-02-19 | 2017-12-20 | 株式会社神戸製鋼所 | Cu積層膜、およびCu合金スパッタリングターゲット |
KR20170083611A (ko) * | 2015-09-25 | 2017-07-18 | 울박, 인크 | 스퍼터링 타겟, 타겟 제조 방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4110132A (en) * | 1976-09-29 | 1978-08-29 | Olin Corporation | Improved copper base alloys |
JPS5976453A (ja) * | 1982-10-19 | 1984-05-01 | Mitsubishi Metal Corp | 半導体装置のリ−ド材用Cu合金クラツド材 |
AU6279296A (en) * | 1996-06-12 | 1998-01-07 | International Business Machines Corporation | Lead-free, high tin ternary solder alloy of tin, silver, and indium |
US6123783A (en) * | 1997-02-06 | 2000-09-26 | Heraeus, Inc. | Magnetic data-storage targets and methods for preparation |
JPH111735A (ja) * | 1997-04-14 | 1999-01-06 | Mitsubishi Shindoh Co Ltd | プレス打抜き加工性に優れた耐食性高強度Cu合金 |
US6123738A (en) | 1998-08-19 | 2000-09-26 | The Dow Chemical Company | Process for the production of low color 2,3-epoxypropyltrialkylammonium halide |
TWI223673B (en) * | 2002-07-25 | 2004-11-11 | Hitachi Metals Ltd | Target and manufacturing method thereof |
US20060233692A1 (en) * | 2004-04-26 | 2006-10-19 | Mainstream Engineering Corp. | Nanotube/metal substrate composites and methods for producing such composites |
TWI254747B (en) * | 2005-03-01 | 2006-05-11 | Ritdisplay Corp | Alloy target for conductive film or its protection layer and manufacturing method thereof |
JP5532767B2 (ja) * | 2009-09-04 | 2014-06-25 | 大同特殊鋼株式会社 | Cu電極保護膜用NiCu合金ターゲット材 |
JP5895370B2 (ja) | 2010-08-30 | 2016-03-30 | 大同特殊鋼株式会社 | パネル用Cu電極保護膜用NiCu合金ターゲット材及び積層膜 |
-
2013
- 2013-04-22 JP JP2013089721A patent/JP6135275B2/ja not_active Expired - Fee Related
-
2014
- 2014-04-08 US US14/247,591 patent/US10538059B2/en not_active Expired - Fee Related
- 2014-04-10 TW TW103113232A patent/TWI627295B/zh not_active IP Right Cessation
- 2014-04-15 CN CN201410151582.3A patent/CN104109837B/zh not_active Expired - Fee Related
- 2014-04-17 KR KR1020140045869A patent/KR102220851B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20140126252A (ko) | 2014-10-30 |
TWI627295B (zh) | 2018-06-21 |
JP2014214318A (ja) | 2014-11-17 |
CN104109837A (zh) | 2014-10-22 |
US10538059B2 (en) | 2020-01-21 |
US20140315043A1 (en) | 2014-10-23 |
KR102220851B1 (ko) | 2021-02-25 |
TW201510247A (zh) | 2015-03-16 |
CN104109837B (zh) | 2018-01-16 |
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