JP6129902B2 - 電子パッケージ及び第1のダイを第2のダイに接続して電子パッケージを形成する方法 - Google Patents
電子パッケージ及び第1のダイを第2のダイに接続して電子パッケージを形成する方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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Description
別の従来の解決策は、モールドアンダーフィル(MUF)プロセスを使用する。このMUFプロセスは、薄いパッケージについてストレス低減及び反り制御を提供するために通常使用される。
図1に示されるように、SR及びUFにおける100%に近い応力低減が、本明細書で説明する電子パッケージ及びこの方法の一部に含まれ得る例示的な隅肉形状によって達成することができる。
支持体14は、ダイ12を取り囲む。支持体14は、有益な同じ隅肉形状を全てのダイ12のエッジ部に提供する。こうして、支持体14は、同様のストレス低減を全てのダイエッジ部に提供する。
電子パッケージ20のいくつかの形態では、ダイ22は、基板21に接合されたフリップチップである。ダイ22を基板21に接合する方法は、(他の要因の中でも特に)電子パッケージ20の製造に関連するコスト、製造上の考慮事項、及び機能に部分的に依存する。
いくつかの形態では、本明細書で説明した電子パッケージ及びこの方法は、改善した信頼性を提供することができる。例として、100%を超える応力低減を得ることができる。また、大きいダイパッケージについて、低い故障率を得ることができる。
実施例1は、電子パッケージを含む。この電子パッケージは、基板と;この基板に取り付けられたダイと;毛細管現象によってダイ及び基板との間に位置付けされたアンダーフィルと;ダイを取り囲む支持体と;を有する。
実施例3は、実施例1又は2に記載の電子パッケージを含んでおり、ここでアンダーフィルは、支持体を基板に固定する。
実施例4は、実施例1〜3のいずれかに記載の電子パッケージを含んでおり、ここでアンダーフィルは、支持体をダイに固定する。
実施例6は、実施例1〜5のいずれかに記載の電子パッケージを含んでおり、ここで支持体は、内側底部エッジと外側底部エッジとを有しており、内側底部エッジは、支持体をダイの周囲に搭載するときに、アンダーフィルを受容するように面取りされている。
実施例8は、実施例1〜7のいずれかに記載の電子パッケージを含んでおり、ここで支持体の断面は、この断面が、ダイ上の相対的に高いストレスの領域においてより大きく、且つダイ上の相対的に低いストレスの領域においてより小さくなるように変化する。
実施例10は、実施例9に記載の電子パッケージを含んでおり、ここで通路は、支持体の外面から支持体の1つの側面に延びる。
実施例12は、実施例11に記載の方法を含んでおり、ここでダイを基板に取り付けるステップは、フリップチップ・ボンディングを用いて、ダイを基板に取り付けるステップを含む。
実施例14は、実施例11〜13のいずれかに記載の方法を含んでおり、ここで支持体をダイの周囲に配置してこの支持体によってダイを取り囲むステップは、アンダーフィルを用いて支持体を基板に取り付けるステップを含む。
実施例16は、実施例11〜15のいずれかに記載の方法を含んでおり、ここで支持体の開口領域を介してアンダーフィルを除去するステップを含む。
実施例17は、実施例11〜16のいずれかに記載の方法を含んでおり、毛細管現象を利用してダイと基板との間にアンダーフィルを挿入するステップは、支持体の通路を介して支持体の外面から支持体の内側下部エッジにアンダーフィルを挿入するステップを含む。
実施例19は、実施例18に記載の電子パッケージを含んでおり、ここでダイは、基板に接合されたフリップチップである。
実施例21は、実施例18〜20のいずれかに記載の電子パッケージを含んでおり、支持体は、実質的に均一な断面を有する。
実施例23は、実施例22に記載の方法を含んでおり、ダイ及び支持体を基板に隣接して配置するステップは、フリップチップ・ボンディングを用いて、ダイを基板に取り付けるステップを含む。
実施例25は、実施例22〜24のいずれかに記載の方法を含んでおり、複数のダイ及び複数の支持体を含むウエハからダイ及び支持体を切り離すステップをさらに含む。
Claims (8)
- 電子パッケージであって、当該電子パッケージは、
基板と、
前記基板に取り付けられたダイと、
毛細管現象によって前記ダイと前記基板との間に位置付けされたアンダーフィルと、
前記ダイを取り囲む支持体と、を備えており、
前記支持体は、内側上部エッジと内部の外側上部エッジとを有しており、前記内側上部エッジは、前記支持体を前記ダイの周囲に搭載するときに、前記ダイと前記支持体との間で上向きに流れる過剰なアンダーフィルを受容するためのチャネルを含む、
電子パッケージ。 - 電子パッケージであって、当該電子パッケージは、
基板と、
前記基板に取り付けられたダイと、
毛細管現象によって前記ダイと前記基板との間に位置付けされたアンダーフィルと、
前記ダイを取り囲む支持体と、を備えており、
前記支持体の断面積は、該断面積が、前記ダイ上の相対的に高い応力がかかる領域でより大きくなり、且つ前記ダイ上の相対的に低い応力がかかる領域でより小さくなるように変化する、
電子パッケージ。 - 電子パッケージであって、当該電子パッケージは、
基板と、
前記基板に取り付けられたダイと、
毛細管現象によって前記ダイと前記基板との間に位置付けされたアンダーフィルと、
前記ダイを取り囲む支持体と、を備えており、
前記支持体は、内側下部エッジと外側下部エッジとを有しており、前記支持体は、通路と外面とを含んでおり、前記通路は、前記支持体の内側下部エッジから前記支持体の外面に延びており、それによって、前記アンダーフィルは、前記支持体を前記ダイの周囲に搭載するときに、前記外面から前記通路を通って前記内側下部エッジに流れる、
電子パッケージ。 - 前記通路は、前記支持体の1つの側面で前記支持体の外面から延びる、
請求項3に記載の電子パッケージ。 - 前記ダイは、前記基板に接着されたフリップチップである、
請求項1乃至3のいずれか一項に記載の電子パッケージ。 - 前記アンダーフィルは、前記支持体を前記基板に固定する、
請求項1乃至3のいずれか一項に記載の電子パッケージ。 - 前記アンダーフィルは、前記支持体を前記ダイに固定する、
請求項1乃至3のいずれか一項に記載の電子パッケージ。 - 前記支持体は、実質的に均一な断面を有する、
請求項1乃至3のいずれか一項に記載の電子パッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US14/323,077 | 2014-07-03 | ||
US14/323,077 US9887104B2 (en) | 2014-07-03 | 2014-07-03 | Electronic package and method of connecting a first die to a second die to form an electronic package |
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Publication Number | Publication Date |
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JP2016015486A JP2016015486A (ja) | 2016-01-28 |
JP6129902B2 true JP6129902B2 (ja) | 2017-05-17 |
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Country Status (5)
Country | Link |
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US (1) | US9887104B2 (ja) |
JP (1) | JP6129902B2 (ja) |
KR (1) | KR101912491B1 (ja) |
CN (1) | CN105280581B (ja) |
TW (1) | TWI626698B (ja) |
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US9721906B2 (en) * | 2015-08-31 | 2017-08-01 | Intel Corporation | Electronic package with corner supports |
KR102406668B1 (ko) | 2016-04-26 | 2022-06-08 | 삼성전자주식회사 | 결함 발생 방지를 위한 반도체 소자 제조 방법 |
KR102565715B1 (ko) | 2019-05-03 | 2023-08-10 | 삼성전자주식회사 | 반도체 패키지 |
US11264349B2 (en) * | 2019-12-19 | 2022-03-01 | Micron Technology, Inc. | Semiconductor die with capillary flow structures for direct chip attachment |
KR102499888B1 (ko) * | 2021-06-22 | 2023-02-16 | 인하대학교 산학협력단 | 반도체칩 구조변형 개선공정 |
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US278046A (en) | 1883-05-22 | Benjamin ehodes | ||
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US1476634A (en) | 1921-08-22 | 1923-12-04 | Deere & Co | Swivel connection for elevator conveyers |
WO1996033201A1 (en) | 1995-04-21 | 1996-10-24 | Centre National De La Recherche Scientifique (Cnrs) | Acyclovir derivatives as antiviral agents |
US6048656A (en) * | 1999-05-11 | 2000-04-11 | Micron Technology, Inc. | Void-free underfill of surface mounted chips |
US6617682B1 (en) | 2000-09-28 | 2003-09-09 | Intel Corporation | Structure for reducing die corner and edge stresses in microelectronic packages |
CN101246833A (zh) * | 2007-02-12 | 2008-08-20 | Psk有限公司 | 基底位置检测方法、基底处理方法和基底处理装置 |
US7982309B2 (en) | 2007-02-13 | 2011-07-19 | Infineon Technologies Ag | Integrated circuit including gas phase deposited packaging material |
KR101481577B1 (ko) * | 2008-09-29 | 2015-01-13 | 삼성전자주식회사 | 잉크 젯 방식의 댐을 구비하는 반도체 패키지 및 그 제조방법 |
JP2010263108A (ja) * | 2009-05-08 | 2010-11-18 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8143110B2 (en) * | 2009-12-23 | 2012-03-27 | Intel Corporation | Methods and apparatuses to stiffen integrated circuit package |
US8399300B2 (en) * | 2010-04-27 | 2013-03-19 | Stats Chippac, Ltd. | Semiconductor device and method of forming adjacent channel and DAM material around die attach area of substrate to control outward flow of underfill material |
JP2012156389A (ja) | 2011-01-27 | 2012-08-16 | Panasonic Corp | 半導体装置 |
KR101246883B1 (ko) | 2011-12-09 | 2013-03-25 | 박수진 | 결로방지용 엘이디 표지판 |
KR101323925B1 (ko) * | 2012-03-30 | 2013-10-31 | 주식회사 네패스 | 반도체 패키지 및 그 제조 방법 |
KR20130122218A (ko) * | 2012-04-30 | 2013-11-07 | 삼성전기주식회사 | 언더필 플립칩 패키지 제조방법 |
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- 2014-07-03 US US14/323,077 patent/US9887104B2/en active Active
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CN105280581B (zh) | 2018-04-06 |
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KR101912491B1 (ko) | 2018-10-26 |
US9887104B2 (en) | 2018-02-06 |
CN105280581A (zh) | 2016-01-27 |
TWI626698B (zh) | 2018-06-11 |
KR20160004922A (ko) | 2016-01-13 |
TW201618195A (zh) | 2016-05-16 |
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