JP6128758B2 - 発光素子の製造方法 - Google Patents
発光素子の製造方法 Download PDFInfo
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- JP6128758B2 JP6128758B2 JP2012129457A JP2012129457A JP6128758B2 JP 6128758 B2 JP6128758 B2 JP 6128758B2 JP 2012129457 A JP2012129457 A JP 2012129457A JP 2012129457 A JP2012129457 A JP 2012129457A JP 6128758 B2 JP6128758 B2 JP 6128758B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 81
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 114
- 239000004065 semiconductor Substances 0.000 description 43
- 239000000463 material Substances 0.000 description 30
- 229910052719 titanium Inorganic materials 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 229910052787 antimony Inorganic materials 0.000 description 8
- 229910052793 cadmium Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 229910001020 Au alloy Inorganic materials 0.000 description 4
- 229910017398 Au—Ni Inorganic materials 0.000 description 4
- 229910017518 Cu Zn Inorganic materials 0.000 description 4
- 229910017752 Cu-Zn Inorganic materials 0.000 description 4
- 229910017943 Cu—Zn Inorganic materials 0.000 description 4
- 229910018100 Ni-Sn Inorganic materials 0.000 description 4
- 229910018532 Ni—Sn Inorganic materials 0.000 description 4
- 229910020218 Pb—Zn Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052699 polonium Inorganic materials 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 229910052702 rhenium Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 229910052716 thallium Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- -1 Co. Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910017755 Cu-Sn Inorganic materials 0.000 description 2
- 229910017927 Cu—Sn Inorganic materials 0.000 description 2
- 229910010093 LiAlO Inorganic materials 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910003070 TaOx Inorganic materials 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012129457A JP6128758B2 (ja) | 2012-06-07 | 2012-06-07 | 発光素子の製造方法 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012129457A JP6128758B2 (ja) | 2012-06-07 | 2012-06-07 | 発光素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013254841A JP2013254841A (ja) | 2013-12-19 |
| JP2013254841A5 JP2013254841A5 (enExample) | 2015-07-02 |
| JP6128758B2 true JP6128758B2 (ja) | 2017-05-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012129457A Active JP6128758B2 (ja) | 2012-06-07 | 2012-06-07 | 発光素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6128758B2 (enExample) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003338468A (ja) * | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子 |
| JP5232375B2 (ja) * | 2006-10-13 | 2013-07-10 | アイシン精機株式会社 | 半導体発光素子の分離方法 |
| WO2010098186A1 (ja) * | 2009-02-25 | 2010-09-02 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
| JP2011243875A (ja) * | 2010-05-20 | 2011-12-01 | Disco Abrasive Syst Ltd | サファイアウェーハの分割方法 |
| JP5528904B2 (ja) * | 2010-05-20 | 2014-06-25 | 株式会社ディスコ | サファイアウェーハの分割方法 |
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2012
- 2012-06-07 JP JP2012129457A patent/JP6128758B2/ja active Active
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| Publication number | Publication date |
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| JP2013254841A (ja) | 2013-12-19 |
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