JP5763789B2 - 光電素子及びその製造方法 - Google Patents
光電素子及びその製造方法 Download PDFInfo
- Publication number
- JP5763789B2 JP5763789B2 JP2013553761A JP2013553761A JP5763789B2 JP 5763789 B2 JP5763789 B2 JP 5763789B2 JP 2013553761 A JP2013553761 A JP 2013553761A JP 2013553761 A JP2013553761 A JP 2013553761A JP 5763789 B2 JP5763789 B2 JP 5763789B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- transition
- pore structure
- pore
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011148 porous material Substances 0.000 claims description 129
- 230000007704 transition Effects 0.000 claims description 116
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- 239000004038 photonic crystal Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims 4
- 230000005693 optoelectronics Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 153
- 230000008859 change Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910010093 LiAlO Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- CBXWGGFGZDVPNV-UHFFFAOYSA-N so4-so4 Chemical compound OS(O)(=O)=O.OS(O)(=O)=O CBXWGGFGZDVPNV-UHFFFAOYSA-N 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Photovoltaic Devices (AREA)
- Semiconductor Lasers (AREA)
Description
102 遷移スタック層
103 第一半導体層
104 能動層
105 第二半導体層
106、107 電極
Claims (10)
- 光電素子であって、
基板と、
前記基板に位置する遷移スタック層と、
前記遷移スタック層に位置する発光スタック層と、を含み、
前記遷移スタック層は、反射構造であり、少なくとも、第一遷移層及び第二遷移層を含み、
前記第一遷移層は、前記基板に位置し、内部に第一細孔構造を有し、
前記第二遷移層は、前記第一遷移層に位置し、内部に第二細孔構造を有し、
前記第一細孔構造及び前記第二細孔構造は、それぞれ、幅及び密度を有し、前記第一細孔構造の幅又は密度は、前記第二細孔構造の幅又は密度とは異なり、
前記遷移スタック層は、第一型添加層であり、
前記第一遷移層及び前記第二遷移層の不純物の添加濃度は異なる、光電素子。 - 請求項1に記載の光電素子であって、
前記光電素子は、複数の前記第一細孔構造及び複数の前記第二細孔構造を含み、
前記複数の第一細孔構造及び前記複数の第二細孔構造は、互いに連結されて一つ又は複数の網状細孔群を形成し、及び/又は、前記複数の第一細孔構造及び前記複数の第二細孔構造は、規則なアレー構造を成し、前記複数の第一細孔構造及び前記複数の第二細孔構造の平均間隔は、10nm〜2000nmであり、孔隙率は、5%〜90%である、光電素子。 - 請求項1に記載の光電素子であって、
前記発光スタック層は、第一半導体層、能動層、及び第二半導体層を含み、
前記第一半導体層、前記能動層、及び前記第二半導体層の材料は、Ga、Al、In、As、P、N、及びSiからなるグループから選択される1種又は1種以上の元素を含む、光電素子。 - 請求項1に記載の光電素子であって、
前記第一型添加層は、不純物の添加濃度が1E15〜1E19cm-3であるn型不純物添加層である、光電素子。 - 請求項1に記載の光電素子であって、
前記第一細孔構造及び前記第二細孔構造は、フォトニック結晶構造である、光電素子。 - 請求項1に記載の光電素子であって、
前記遷移スタック層に形成される接続層を更に含み、
前記接続層は、不純物非故意添加層(unintentional doped layer)又は不純物未添加層(undoped layer)である、光電素子。 - 請求項1に記載の光電素子であって、
前記遷移スタック層は、前記第二遷移層に形成される第三遷移層を更に含み、
前記第三遷移層は、内部に少なくとも一つの第三細孔構造を有し、前記第三細孔構造は、幅及び密度を有し、前記第一細孔構造の幅又は密度、並びに、前記第二細孔構造の幅又は密度は、前記第三細孔構造の幅又は密度とは異なる、光電素子。 - 光電素子を製造する方法であって、
基板を提供し、
第一遷移層を前記基板に形成し、
少なくとも一つの第一細孔構造を前記第一遷移層内に形成し、
第二遷移層を前記第一遷移層に形成し、
少なくとも一つの第二細孔構造を前記第二遷移層内に形成し、及び
前記第一遷移層及び前記第二遷移層を含む遷移スタック層に位置する発光スタック層を形成するステップを含み、
前記第一細孔構造及び前記第二細孔構造は、それぞれ、幅及び密度を有し、前記第一細孔構造の幅又は密度は、前記第二細孔構造の幅又は密度とは異なり、
前記遷移スタック層は、第一型添加層であり、
前記第一遷移層及び前記第二遷移層の不純物の添加濃度は異なり、
前記第一遷移層及び前記第二遷移層を含む前記遷移スタック層は、反射構造である、方法。 - 請求項8に記載の方法であって、
前記第一遷移層及び前記第二遷移層に前記第一細孔構造及び前記第二細孔構造をそれぞれ形成するステップは、電気化学エッチング、電気化学エッチング、異方性ドライエッチング、又は異方性ウェットエッチングを含む、方法。 - 請求項8に記載の方法であって、
前記第一細孔構造及び前記第二細孔構造は、電気化学エッチングにより形成され、
前記第一型添加層は、不純物の添加濃度が1E15〜1E19cm-3であるn型不純物添加層である、方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2011/071105 WO2012109797A1 (zh) | 2011-02-18 | 2011-02-18 | 光电元件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014507069A JP2014507069A (ja) | 2014-03-20 |
JP5763789B2 true JP5763789B2 (ja) | 2015-08-12 |
Family
ID=46671927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013553761A Active JP5763789B2 (ja) | 2011-02-18 | 2011-02-18 | 光電素子及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20130334555A1 (ja) |
JP (1) | JP5763789B2 (ja) |
KR (1) | KR101550117B1 (ja) |
CN (1) | CN103339747A (ja) |
DE (1) | DE112011104913T5 (ja) |
WO (1) | WO2012109797A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11631782B2 (en) | 2018-01-26 | 2023-04-18 | Cambridge Enterprise Limited | Method for electrochemically etching a semiconductor structure |
US11651954B2 (en) | 2017-09-27 | 2023-05-16 | Cambridge Enterprise Ltd | Method for porosifying a material and semiconductor structure |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2529394A4 (en) | 2010-01-27 | 2017-11-15 | Yale University | Conductivity based selective etch for gan devices and applications thereof |
WO2014004261A1 (en) * | 2012-06-28 | 2014-01-03 | Yale University | Lateral electrochemical etching of iii-nitride materials for microfabrication |
TWI575776B (zh) | 2013-05-24 | 2017-03-21 | 晶元光電股份有限公司 | 具有高效率反射結構之發光元件 |
CN104218128B (zh) * | 2013-05-31 | 2018-12-14 | 晶元光电股份有限公司 | 具有高效率反射结构的发光元件 |
US11095096B2 (en) | 2014-04-16 | 2021-08-17 | Yale University | Method for a GaN vertical microcavity surface emitting laser (VCSEL) |
US11043792B2 (en) | 2014-09-30 | 2021-06-22 | Yale University | Method for GaN vertical microcavity surface emitting laser (VCSEL) |
US11018231B2 (en) | 2014-12-01 | 2021-05-25 | Yale University | Method to make buried, highly conductive p-type III-nitride layers |
US10554017B2 (en) | 2015-05-19 | 2020-02-04 | Yale University | Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer |
CN105449057B (zh) * | 2015-11-11 | 2017-12-26 | 厦门乾照光电股份有限公司 | 一种集成多孔状反射层的发光二极管 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6107213A (en) * | 1996-02-01 | 2000-08-22 | Sony Corporation | Method for making thin film semiconductor |
JP3631724B2 (ja) * | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
JP2006313771A (ja) * | 2005-05-06 | 2006-11-16 | Showa Denko Kk | Iii族窒化物半導体素子用エピタキシャル基盤 |
JP4933193B2 (ja) * | 2005-08-11 | 2012-05-16 | キヤノン株式会社 | 面発光レーザ、該面発光レーザにおける二次元フォトニック結晶の製造方法 |
KR100695118B1 (ko) * | 2005-12-27 | 2007-03-14 | 삼성코닝 주식회사 | 다중-프리스탠딩 GaN 웨이퍼의 제조방법 |
JP5250999B2 (ja) * | 2006-06-08 | 2013-07-31 | ソニー株式会社 | 面発光型半導体レーザ |
US8174025B2 (en) * | 2006-06-09 | 2012-05-08 | Philips Lumileds Lighting Company, Llc | Semiconductor light emitting device including porous layer |
TWI396297B (zh) * | 2007-01-24 | 2013-05-11 | Tera Xtal Technology Corp | 發光二極體結構及其製造方法 |
US7601989B2 (en) * | 2007-03-27 | 2009-10-13 | Philips Lumileds Lighting Company, Llc | LED with porous diffusing reflector |
US20100200881A1 (en) * | 2007-06-28 | 2010-08-12 | Kyocera Corporation | Light Emitting Element and Illumination Device |
US8525200B2 (en) * | 2008-08-18 | 2013-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-emitting diode with non-metallic reflector |
JP2010251698A (ja) * | 2009-03-27 | 2010-11-04 | Furukawa Electric Co Ltd:The | 面発光レーザ素子、面発光レーザアレイ素子、面発光レーザ装置、光源装置、および光モジュール |
EP2529394A4 (en) * | 2010-01-27 | 2017-11-15 | Yale University | Conductivity based selective etch for gan devices and applications thereof |
TWI501421B (zh) | 2010-09-21 | 2015-09-21 | Epistar Corp | 光電元件及其製造方法 |
CN102122691B (zh) * | 2011-01-18 | 2015-06-10 | 王楚雯 | Led外延片、led结构及led结构的形成方法 |
CN102064186A (zh) * | 2010-11-15 | 2011-05-18 | 王楚雯 | 半导体结构及其形成方法 |
CN102104060B (zh) * | 2010-11-15 | 2013-03-20 | 王楚雯 | 一种半导体结构及其形成方法 |
TWI419367B (zh) | 2010-12-02 | 2013-12-11 | Epistar Corp | 光電元件及其製造方法 |
-
2011
- 2011-02-18 KR KR1020137021606A patent/KR101550117B1/ko active IP Right Grant
- 2011-02-18 DE DE112011104913T patent/DE112011104913T5/de not_active Withdrawn
- 2011-02-18 WO PCT/CN2011/071105 patent/WO2012109797A1/zh active Application Filing
- 2011-02-18 JP JP2013553761A patent/JP5763789B2/ja active Active
- 2011-02-18 CN CN2011800658379A patent/CN103339747A/zh active Pending
-
2013
- 2013-08-16 US US13/968,659 patent/US20130334555A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11651954B2 (en) | 2017-09-27 | 2023-05-16 | Cambridge Enterprise Ltd | Method for porosifying a material and semiconductor structure |
US11631782B2 (en) | 2018-01-26 | 2023-04-18 | Cambridge Enterprise Limited | Method for electrochemically etching a semiconductor structure |
Also Published As
Publication number | Publication date |
---|---|
DE112011104913T5 (de) | 2013-12-24 |
US20130334555A1 (en) | 2013-12-19 |
CN103339747A (zh) | 2013-10-02 |
KR20140030135A (ko) | 2014-03-11 |
WO2012109797A1 (zh) | 2012-08-23 |
JP2014507069A (ja) | 2014-03-20 |
KR101550117B1 (ko) | 2015-09-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5763789B2 (ja) | 光電素子及びその製造方法 | |
TWI419367B (zh) | 光電元件及其製造方法 | |
TWI451597B (zh) | 光電元件及其製造方法 | |
US8519430B2 (en) | Optoelectronic device and method for manufacturing the same | |
TWI501421B (zh) | 光電元件及其製造方法 | |
US9070827B2 (en) | Optoelectronic device and method for manufacturing the same | |
US8946736B2 (en) | Optoelectronic device and method for manufacturing the same | |
TWI431810B (zh) | 光電元件及其製造方法 | |
CN102544287B (zh) | 光电元件及其制造方法 | |
TWI618264B (zh) | 光電元件及其製造方法 | |
CN102420281B (zh) | 光电元件及其制造方法 | |
CN102623580B (zh) | 光电元件及其制造方法 | |
TWI495155B (zh) | 光電元件及其製造方法 | |
JP2012094752A (ja) | 光電素子及びその製造方法 | |
KR101643213B1 (ko) | 광전소자 및 그 제조방법 | |
KR20120040426A (ko) | 광전 소자 및 그 제조 방법 | |
JP2012142473A (ja) | 光電素子及びその製造方法 | |
JP6128758B2 (ja) | 発光素子の製造方法 | |
KR101435512B1 (ko) | 혼성 구조를 갖는 발광다이오드 | |
US20140167097A1 (en) | Optoelectronic device and method for manufacturing the same | |
KR20130139581A (ko) | 발광소자 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131206 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141016 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141021 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150120 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150501 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150519 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150611 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5763789 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |