JP6123561B2 - 発光素子及びその製造方法、並びに、表示装置 - Google Patents

発光素子及びその製造方法、並びに、表示装置 Download PDF

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Publication number
JP6123561B2
JP6123561B2 JP2013164884A JP2013164884A JP6123561B2 JP 6123561 B2 JP6123561 B2 JP 6123561B2 JP 2013164884 A JP2013164884 A JP 2013164884A JP 2013164884 A JP2013164884 A JP 2013164884A JP 6123561 B2 JP6123561 B2 JP 6123561B2
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JP
Japan
Prior art keywords
layer
compound semiconductor
semiconductor layer
light emitting
light
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2013164884A
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English (en)
Japanese (ja)
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JP2015035465A5 (https=
JP2015035465A (ja
Inventor
賢太郎 藤井
賢太郎 藤井
大野　智輝
智輝 大野
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2013164884A priority Critical patent/JP6123561B2/ja
Priority to US14/449,785 priority patent/US9293637B2/en
Priority to CN201410379685.5A priority patent/CN104348085B/zh
Publication of JP2015035465A publication Critical patent/JP2015035465A/ja
Publication of JP2015035465A5 publication Critical patent/JP2015035465A5/ja
Application granted granted Critical
Publication of JP6123561B2 publication Critical patent/JP6123561B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/042—Superluminescent diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment

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  • Led Devices (AREA)
JP2013164884A 2013-08-08 2013-08-08 発光素子及びその製造方法、並びに、表示装置 Expired - Fee Related JP6123561B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013164884A JP6123561B2 (ja) 2013-08-08 2013-08-08 発光素子及びその製造方法、並びに、表示装置
US14/449,785 US9293637B2 (en) 2013-08-08 2014-08-01 Light emitting element and display device including a light-emitting region having ridge stripe structures
CN201410379685.5A CN104348085B (zh) 2013-08-08 2014-08-04 发光元件、其制造方法和显示设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013164884A JP6123561B2 (ja) 2013-08-08 2013-08-08 発光素子及びその製造方法、並びに、表示装置

Publications (3)

Publication Number Publication Date
JP2015035465A JP2015035465A (ja) 2015-02-19
JP2015035465A5 JP2015035465A5 (https=) 2016-03-31
JP6123561B2 true JP6123561B2 (ja) 2017-05-10

Family

ID=52447841

Family Applications (1)

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JP2013164884A Expired - Fee Related JP6123561B2 (ja) 2013-08-08 2013-08-08 発光素子及びその製造方法、並びに、表示装置

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Country Link
US (1) US9293637B2 (https=)
JP (1) JP6123561B2 (https=)
CN (1) CN104348085B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES3047667T3 (en) 2013-02-22 2025-12-04 Univ Leland Stanford Junior Methods relating to telomere extension
CN107251241B (zh) 2015-03-03 2019-12-13 索尼公司 半导体发光器件和显示装置
JP2017037948A (ja) * 2015-08-10 2017-02-16 セイコーエプソン株式会社 発光装置およびプロジェクター
JP6551672B2 (ja) * 2015-08-17 2019-07-31 セイコーエプソン株式会社 発光装置およびプロジェクター
EP3506438B1 (en) * 2016-08-25 2021-01-13 Sony Corporation Semiconductor laser, electronic apparatus, and drive method for semiconductor laser
US11593918B1 (en) * 2017-05-16 2023-02-28 Apple Inc. Gradient-based noise reduction
DE102020106113A1 (de) 2020-03-06 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterkörper, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterkörpers
WO2023223676A1 (ja) * 2022-05-19 2023-11-23 パナソニックホールディングス株式会社 半導体レーザ素子

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2778985B2 (ja) 1989-05-26 1998-07-23 日本電信電話株式会社 スーパールミネツセントダイオード
JP3761240B2 (ja) * 1996-02-28 2006-03-29 浜松ホトニクス株式会社 光検出装置
JPH11112081A (ja) * 1997-10-01 1999-04-23 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
US6034380A (en) * 1997-10-07 2000-03-07 Sarnoff Corporation Electroluminescent diode with mode expander
US6058124A (en) * 1997-11-25 2000-05-02 Xerox Corporation Monolithic independently addressable Red/IR side by side laser
JP2000022262A (ja) * 1998-06-29 2000-01-21 Rohm Co Ltd 半導体レーザ装置
JP3683416B2 (ja) * 1998-08-21 2005-08-17 アンリツ株式会社 スーパールミネッセントダイオード
JP4589080B2 (ja) * 2004-10-29 2010-12-01 シャープ株式会社 エッチング方法
JP4411540B2 (ja) * 2005-09-15 2010-02-10 ソニー株式会社 半導体レーザ装置
DE102006059612A1 (de) * 2006-12-12 2008-06-19 Forschungsverbund Berlin E.V. Halbleiterbauelement und Verfahren zu dessen Herstellung
JP4999583B2 (ja) 2007-07-18 2012-08-15 キヤノン株式会社 光走査装置及び走査型画像表示装置
JP2009088425A (ja) * 2007-10-03 2009-04-23 Sony Corp 半導体レーザおよびその製造方法
JP5307466B2 (ja) * 2008-07-29 2013-10-02 ソニー株式会社 半導体レーザ及びその駆動方法、並びに、半導体レーザ装置
JP2012204671A (ja) * 2011-03-25 2012-10-22 Panasonic Corp 半導体発光素子

Also Published As

Publication number Publication date
CN104348085A (zh) 2015-02-11
JP2015035465A (ja) 2015-02-19
US9293637B2 (en) 2016-03-22
US20150041757A1 (en) 2015-02-12
CN104348085B (zh) 2019-04-16

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