JP6121860B2 - Wiring board and electronic device - Google Patents

Wiring board and electronic device Download PDF

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Publication number
JP6121860B2
JP6121860B2 JP2013200033A JP2013200033A JP6121860B2 JP 6121860 B2 JP6121860 B2 JP 6121860B2 JP 2013200033 A JP2013200033 A JP 2013200033A JP 2013200033 A JP2013200033 A JP 2013200033A JP 6121860 B2 JP6121860 B2 JP 6121860B2
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insulating substrate
mounting portion
electronic component
wiring board
plan
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JP2015069981A (en
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憲章 平田
憲章 平田
剛士 川代
剛士 川代
陽介 森山
陽介 森山
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device

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  • Structure Of Printed Boards (AREA)

Description

本発明は、配線基板および電子装置に関するものである。   The present invention relates to a wiring board and an electronic device.

従来、上面に電子部品を搭載するための搭載部を有する配線基板が知られている。（例えば、特許文献１を参照。）。   2. Description of the Related Art Conventionally, a wiring board having a mounting portion for mounting electronic components on an upper surface is known. (For example, see Patent Document 1).

特開2003−133454号公報Japanese Patent Laid-Open No. 2003-133454

しかしながら、配線基板の中には搭載部が上面側に湾曲したものがある。配線基板の搭載部が上面側に湾曲していると、電子部品を搭載部に搭載する場合に電子部品が傾いてしまい、例えば、電子部品が撮像素子の場合には正常な画像が得られなくなり、電子部品が発光素子の場合には、所定の方向に良好に光を放射することができなくなることが懸念される。   However, in some wiring boards, the mounting portion is curved upward. If the mounting portion of the wiring board is curved to the upper surface side, the electronic component is inclined when the electronic component is mounted on the mounting portion. For example, when the electronic component is an image sensor, a normal image cannot be obtained. When the electronic component is a light emitting element, there is a concern that light cannot be emitted well in a predetermined direction.

本発明の一つの態様による配線基板は、上面にキャビティおよび電子部品を搭載するための搭載部を有する絶縁基板を含み、該絶縁基板は、下面に平面透視で前記搭載部の外周部と重なり、該外周部に沿った形状の凹部を有し、前記搭載部の中央部は下面側に湾曲しており、平面透視において、前記凹部は前記キャビティの側壁よりも内側から外側となる位置に設けられている。
Wiring board according to one aspect of the present invention comprises an insulating substrate having a mounting portion for mounting the cavity and the electronic component on the upper surface, the insulating substrate overlaps with the outer peripheral portion of the mounting portion in a plan perspective underneath surface And a concave portion having a shape along the outer peripheral portion, the central portion of the mounting portion is curved to the lower surface side, and the concave portion is provided at a position from the inner side to the outer side than the side wall of the cavity in a plan view. It has been.

本発明の他の態様による電子装置は、上記構成の配線基板と、前記搭載部に搭載された前記電子部品とを有する。   An electronic device according to another aspect of the present invention includes the wiring board configured as described above and the electronic component mounted on the mounting portion.

本発明の一つの態様による配線基板によれば、上面にキャビティおよび電子部品を搭載するための搭載部を有する絶縁基板を含み、絶縁基板は、下面に平面透視で搭載部の外周
部と重なり、外周部に沿った形状の凹部を有し、搭載部の中央部は下面側に湾曲しており、平面透視において、凹部はキャビティの側壁よりも内側から外側となる位置に設けられている。上記構成により、電子部品を搭載部に搭載する場合に電子部品が傾くことはなく、電子部品が撮像素子の場合には正常な画像が得られるものとすることができる。 According to the wiring board according to one aspect of the present invention comprises an insulating substrate having a mounting portion for mounting the cavity and the electronic component on the upper surface, an insulating substrate overlaps with the outer peripheral portion of the mounting portion in a plan perspective underneath surface The concave portion has a shape along the outer peripheral portion, the central portion of the mounting portion is curved to the lower surface side , and the concave portion is provided at a position on the inner side to the outer side than the side wall of the cavity in a plan view . With the above configuration, the electronic component is not inclined when the electronic component is mounted on the mounting portion, and a normal image can be obtained when the electronic component is an image sensor.

本発明の他の態様による電子装置によれば、上記構成の配線基板を有していることによって、電子部品が搭載部に良好に搭載され、特性に関して向上されたものとなる。   According to the electronic device according to another aspect of the present invention, since the wiring board having the above-described configuration is provided, the electronic component is favorably mounted on the mounting portion, and the characteristics are improved.

（ａ）は、本発明の第１の実施形態における電子装置を示す上面図であり、（ｂ）は（ａ）の下面図である。(A) is a top view which shows the electronic device in the 1st Embodiment of this invention, (b) is a bottom view of (a). （ａ）は、図１（ａ）に示された電子装置のＡ−Ａ線における断面図、（ｂ）は、（ａ）のＡ部おける要部拡大断面図である。(A) is sectional drawing in the AA of the electronic device shown by Fig.1 (a), (b) is a principal part expanded sectional view in the A section of (a). （ａ）〜（ｃ）は、本発明の第１の実施形態における配線基板の製造方法における工程の一例を示す断面図である。(A)-(c) is sectional drawing which shows an example of the process in the manufacturing method of the wiring board in the 1st Embodiment of this invention. （ａ）は、本発明の第２の実施形態における電子装置を示す上面図であり、（ｂ）は（ａ）の下面図である。(A) is a top view which shows the electronic device in the 2nd Embodiment of this invention, (b) is a bottom view of (a). 図４（ａ）に示された電子装置のＡ−Ａ線における断面図である。It is sectional drawing in the AA of the electronic device shown by Fig.4 (a).

本発明のいくつかの例示的な実施形態について、添付の図面を参照しつつ説明する。   Several exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

（第１の実施形態）
本発明の第１の実施形態における電子装置は、図１および図２に示されているように、配線基板１と、配線基板１の上面に搭載された電子部品２とを含んでいる。電子装置は、例えば電子部品モジュールを構成する回路基板上に実装される。 (First embodiment)
As shown in FIGS. 1 and 2, the electronic device according to the first embodiment of the present invention includes a wiring board 1 and an electronic component 2 mounted on the upper surface of the wiring board 1. The electronic device is mounted on a circuit board that constitutes an electronic component module, for example.

配線基板１は、上面に電子部品２を搭載するための搭載部11ａすなわちキャビティ11ｂの底面を有している絶縁基板11と、絶縁基板11の表面および内部に設けられている配線導体12とを有している。絶縁基板11は、絶縁基板11の下面に平面透視で搭載部11ａの外周部と重なり、外周部に沿った形状の凹部13を有している。絶縁基板11は、搭載部11ａの中央部が下面側に湾曲している。図１および図２において、電子装置は仮想のｘｙｚ空間におけるｘｙ平面に実装されている。図１および図２において、上方向とは、仮想のｚ軸の正方向のことをいう。   The wiring substrate 1 includes an insulating substrate 11 having a mounting portion 11a for mounting the electronic component 2 on the upper surface, that is, a bottom surface of the cavity 11b, and a wiring conductor 12 provided on the surface and inside of the insulating substrate 11. Have. The insulating substrate 11 has a recess 13 having a shape along the outer peripheral portion, overlapping the outer peripheral portion of the mounting portion 11a on a lower surface of the insulating substrate 11 in a plan view. The insulating substrate 11 has a central portion of the mounting portion 11a curved to the lower surface side. 1 and 2, the electronic device is mounted on an xy plane in a virtual xyz space. 1 and 2, the upward direction refers to the positive direction of the virtual z axis.

絶縁基板11は、複数の絶縁層からなり、電子部品２の搭載領域11ａを含む上面を有しており、平面視において矩形の板状の形状を有している。絶縁基板11は、電子部品２を支持するための支持体として機能し、上面中央部の搭載領域11ａ上に電子部品２が樹脂等の接合剤を介して接着され固定される。   The insulating substrate 11 is composed of a plurality of insulating layers, has an upper surface including the mounting area 11a of the electronic component 2, and has a rectangular plate shape in plan view. The insulating substrate 11 functions as a support for supporting the electronic component 2, and the electronic component 2 is bonded and fixed to the mounting region 11 a at the center of the upper surface via a bonding agent such as a resin.

絶縁基板11は、例えば、酸化アルミニウム質焼結体（アルミナセラミックス），窒化アルミニウム質焼結体，ムライト質焼結体またはガラスセラミックス焼結体等のセラミックスを用いることができる。   As the insulating substrate 11, for example, ceramics such as an aluminum oxide sintered body (alumina ceramic), an aluminum nitride sintered body, a mullite sintered body, or a glass ceramic sintered body can be used.

絶縁基板11が、例えば酸化アルミニウム質焼結体から成る場合であれば、酸化アルミニウム，酸化珪素，酸化マグネシウムおよび酸化カルシウム等の原料粉末に適当な有機バインダーおよび溶剤等を添加混合して泥漿状とし、これをドクターブレード法、カレンダーロール法等によってシート状に成形してセラミックグリーンシートを得て、しかる後、セラミックグリーンシートに適当な打ち抜き加工を施すとともにこれを複数枚積層し、高温（約1600℃）で焼成することによって製作される。   If the insulating substrate 11 is made of, for example, an aluminum oxide sintered body, a suitable organic binder and solvent are added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide to form a slurry. Then, this is formed into a sheet by the doctor blade method, calender roll method, etc. to obtain a ceramic green sheet. After that, the ceramic green sheet is subjected to appropriate punching processing, and a plurality of these are laminated to obtain a high temperature (about 1600 Manufactured by baking at a temperature of ° C.

キャビティ11ｂは、絶縁基板11の上面側に開口しており、電子部品２を収納し、搭載するための領域となる。このようなキャビティ11ｂは、絶縁基板11用のセラミックグリーンシートのいくつかに、レーザー加工、金型による打ち抜き加工等によって、キャビティ11ｂとなる貫通孔を形成しておくことにより形成される。   The cavity 11b is opened on the upper surface side of the insulating substrate 11, and serves as a region for housing and mounting the electronic component 2. Such cavities 11b are formed by forming through holes to be cavities 11b in some of the ceramic green sheets for the insulating substrate 11 by laser machining, punching with a mold, or the like.

配線導体12は、絶縁基板11の表面および内部に設けられている。配線導体12の一端部は、キャビティ11ｂ内に導出されており、配線導体12の他端部は、絶縁基板11の下面に導出している。配線導体12は、配線基板１に搭載された電子部品２と外部の回路基板とを電気的に接続するためのものである。配線導体12は、絶縁基板11の表面または内部に設けられた配線導体と、絶縁基板11を構成する絶縁層を貫通して上下に位置する配線導体同士を電気的に接続する貫通導体とを含んでいる。   The wiring conductor 12 is provided on the surface and inside of the insulating substrate 11. One end of the wiring conductor 12 is led out into the cavity 11b, and the other end of the wiring conductor 12 is led out to the lower surface of the insulating substrate 11. The wiring conductor 12 is for electrically connecting the electronic component 2 mounted on the wiring board 1 and an external circuit board. The wiring conductor 12 includes a wiring conductor provided on the surface of or inside the insulating substrate 11, and a through conductor that electrically connects the wiring conductors that are positioned above and below the insulating layer constituting the insulating substrate 11. It is out.

配線導体12は、タングステン（Ｗ），モリブデン（Ｍｏ），マンガン（Ｍｎ），銀（Ａｇ）または銅（Ｃｕ）等の金属材料を用いることができる。例えば、絶縁基板11が酸化アルミニウム質焼結体から成る場合であれば、Ｗ，ＭｏまたはＭｎ等の高融点金属粉末に適当な有機バインダーおよび溶媒等を添加混合して得た導体ペーストを、絶縁基板11となる
セラミックグリーンシートに予めスクリーン印刷法によって所定のパターンに印刷塗布して、絶縁基板11となるセラミックグリーンシートと同時に焼成することによって、絶縁基板11の所定位置に被着形成される。配線導体12が貫通導体である場合は、金型、パンチングによる打ち抜き加工、レーザー加工によってグリーンシートに貫通孔を形成して、この貫通孔に印刷法によって配線導体12用の導体ペーストを充填しておくことによって形成される。 The wiring conductor 12 can be made of a metal material such as tungsten (W), molybdenum (Mo), manganese (Mn), silver (Ag), or copper (Cu). For example, when the insulating substrate 11 is made of an aluminum oxide sintered body, a conductive paste obtained by adding and mixing a suitable organic binder and solvent to a refractory metal powder such as W, Mo or Mn is insulated. The ceramic green sheet to be the substrate 11 is preliminarily printed and applied in a predetermined pattern by a screen printing method, and is fired simultaneously with the ceramic green sheet to be the insulating substrate 11, thereby being deposited on a predetermined position of the insulating substrate 11. When the wiring conductor 12 is a through conductor, a through hole is formed in the green sheet by a die, punching by punching, and laser processing, and the through paste is filled with a conductor paste for the wiring conductor 12 by a printing method. It is formed by placing.

配線導体12の露出する表面には、電解めっき法によってめっき層が被着される。めっき層は、ニッケル，銅，金または銀等の耐食性、接続部材３との接続性に優れる金属から成るものであり、例えば、厚さ0.5〜５μｍ程度のニッケルめっき層と0.1〜３μｍ程度の金めっき層とが、あるいは厚さ１〜10μｍ程度のニッケルめっき層と0.1〜１μｍ程度の銀
めっき層とが、順次被着される。これによって、配線導体12が腐食することを効果的に抑制できるとともに、配線導体12と電子部品２との固着、配線導体12とボンディングワイヤ等の接続部材３との接合、配線導体12と外部の回路基板の配線との接合を強固にできる。 A plating layer is deposited on the exposed surface of the wiring conductor 12 by electrolytic plating. The plating layer is made of a metal having excellent corrosion resistance such as nickel, copper, gold, or silver, and excellent connection with the connection member 3, for example, a nickel plating layer having a thickness of about 0.5 to 5 μm and a gold having a thickness of about 0.1 to 3 μm. A plating layer, or a nickel plating layer having a thickness of about 1 to 10 μm and a silver plating layer having a thickness of about 0.1 to 1 μm are sequentially deposited. As a result, corrosion of the wiring conductor 12 can be effectively suppressed, the wiring conductor 12 and the electronic component 2 are fixed, the wiring conductor 12 is bonded to the connecting member 3 such as a bonding wire, and the wiring conductor 12 is connected to the outside. Bonding with circuit board wiring can be strengthened.

絶縁基板11は、図１および図２に示す例のように、絶縁基板11の下面に平面透視で搭載部11ａの外周部と重なり、外周部に沿った形状の凹部13を有しており、搭載部11ａの中央部は下面側に湾曲している。図１および図２に示す例において、一対の溝状の凹部13が、絶縁基板11の最下層の絶縁層に形成されている。キャビティ11ｂの底面は、平面透視にて凹部13と重なる領域が上面側に凸状に湾曲して形成されている。湾曲部14は、絶縁基板11の上面が、一対の凹部13に挟まれる部分において下面側に凸状に湾曲して形成されている。   As shown in FIGS. 1 and 2, the insulating substrate 11 overlaps with the outer periphery of the mounting portion 11a on the lower surface of the insulating substrate 11 in a plan view, and has a recess 13 having a shape along the outer periphery. The central portion of the mounting portion 11a is curved to the lower surface side. In the example shown in FIGS. 1 and 2, a pair of groove-like recesses 13 are formed in the lowermost insulating layer of the insulating substrate 11. The bottom surface of the cavity 11b is formed such that a region overlapping the concave portion 13 in a plan view is curved in a convex shape on the upper surface side. The curved portion 14 is formed such that the upper surface of the insulating substrate 11 is curved in a convex shape on the lower surface side at a portion sandwiched between the pair of concave portions 13.

凹部13および湾曲部14の形成は、例えば、以下の製造方法により製作できる。   Formation of the recessed part 13 and the curved part 14 can be manufactured with the following manufacturing methods, for example.

絶縁基板11用のセラミックグリーンシート111、211、311、411を準備し、図３（ａ）に示された例のように、それぞれのセラミックグリーンシート111、211、311、411に配線導体12用の導体ペーストをクリーン印刷法等によって所定のパターンに印刷塗布あるいは配線導体12用の貫通孔に充填する。また、上面側となるセラミックグリーンシート111、112には、キャビティ11ｂとなる貫通孔113を形成する。下面側となるセラミックグリーンシ
ート411には、絶縁基板11の下面に平面透視で搭載部11ａの外周部と重なる領域に、外周
部に沿った形状の凹部13となる貫通孔113を形成する。 Prepare ceramic green sheets 111, 211, 311 and 411 for the insulating substrate 11, and use them for the wiring conductor 12 on each ceramic green sheet 111, 211, 311 and 411 as in the example shown in FIG. The conductor paste is printed and applied in a predetermined pattern by a clean printing method or the like, or the through hole for the wiring conductor 12 is filled. Further, through holes 113 serving as cavities 11b are formed in the ceramic green sheets 111 and 112 on the upper surface side. In the ceramic green sheet 411 on the lower surface side, a through-hole 113 serving as a recess 13 having a shape along the outer peripheral portion is formed in a region overlapping the outer peripheral portion of the mounting portion 11a on a lower surface of the insulating substrate 11 in a plan view.

次に、これらのセラミックグリーンシートを積層して加圧することにより、図３（ｂ）に示された例のように、上面側にキャビティ11ｂと下面側に凹部13とを有するセラミック積層体511を形成する。   Next, by laminating and pressing these ceramic green sheets, a ceramic laminate 511 having a cavity 11b on the upper surface side and a recess 13 on the lower surface side is obtained as in the example shown in FIG. 3B. Form.

そして、このセラミック積層体511を焼成することにより、図３（ｃ）に示された例の
ように、湾曲部14を有する絶縁基板11を形成する。セラミック積層体511の下面に平面透
視で搭載部11ａの外周部と重なり、外周部に沿った形状の凹部13となる貫通孔113を設け
ることによって、セラミック積層体511を焼成した際に、焼成時に発生する搭載部11ａの
反りをセラミック積層体511の下面側に凸とすることが可能となり、下面に平面透視で搭
載部11ａの外周部と重なり、外周部に沿った形状の凹部13を有し、搭載部11ａの中央部は下面側に湾曲している絶縁基板11とすることができる。 Then, by firing this ceramic laminate 511, an insulating substrate 11 having a curved portion 14 is formed as in the example shown in FIG. When the ceramic laminate 511 is fired by providing a through hole 113 that overlaps with the outer periphery of the mounting portion 11a in a plan view on the lower surface of the ceramic laminate 511 and becomes a recess 13 having a shape along the outer periphery. The generated warp of the mounting portion 11a can be convex on the lower surface side of the ceramic laminate 511. The lower surface overlaps with the outer peripheral portion of the mounting portion 11a in a plan view and has a concave portion 13 shaped along the outer peripheral portion. The central portion of the mounting portion 11a can be the insulating substrate 11 curved to the lower surface side.

なお、図３（ｂ）に示す例のように、平面透視にて、セラミック積層体511のキャビテ
ィ11ｂの底面の凹部13と重なる領域が予め上面側に凸状となるようにしておくと、焼成時に、下面に平面透視で搭載部11ａの外周部と重なり、外周部に沿った形状の凹部13を有し、搭載部11ａの中央部は下面側に湾曲している絶縁基板11を形成しやすくなる。 In addition, as shown in the example shown in FIG. 3B, when the region overlapping with the concave portion 13 on the bottom surface of the cavity 11b of the ceramic laminate 511 is projected in advance on the upper surface side in a plan view, firing is performed. Sometimes, it is easy to form an insulating substrate 11 that has a concave portion 13 that overlaps with the outer peripheral portion of the mounting portion 11a on the lower surface and has a shape along the outer peripheral portion, and the central portion of the mounting portion 11a is curved on the lower surface side. Become.

また、キャビティ11ｂ内の凹部13とは平面透視にて重ならない領域と凹部13内とにそれぞれ焼成用治具を入れておくと、セラミック積層体511を焼成する際に、キャビティ11ｂ
の底面において、平面透視にて凹部13と重なる領域を上面側に凸状にするとともに、絶縁基板11の搭載部11ａの中央部が下面側に凸状に湾曲している湾曲部14を形成することができる。 Further, if a firing jig is placed in each of the region that does not overlap with the concave portion 13 in the cavity 11b and the concave portion 13, when the ceramic laminate 511 is fired, the cavity 11b
In the bottom surface, a region overlapping with the concave portion 13 in a plan view is made convex toward the upper surface side, and a central portion of the mounting portion 11a of the insulating substrate 11 is formed to be curved convexly toward the lower surface side. be able to.

なお、上述の例では、セラミック積層体511を焼成する際に、絶縁基板11の上面に湾曲
部14を形成しているが、セラミック積層体511の上面を予め下面側に凸状となるように湾
曲状に形成した後、セラミック積層体511を焼成することにより、湾曲部14を有する絶縁
基板11を形成しても構わない。このようなセラミック積層体511は、例えば、セラミック
積層体511のキャビティ11ｂの底面を押圧したり、あるいはセラミック積層体511の下面側から吸引することにより形成することができる。 In the above example, when the ceramic laminate 511 is fired, the curved portion 14 is formed on the upper surface of the insulating substrate 11, but the upper surface of the ceramic laminate 511 is previously convex on the lower surface side. After forming into a curved shape, the insulating substrate 11 having the curved portion 14 may be formed by firing the ceramic laminate 511. Such a ceramic laminate 511 can be formed, for example, by pressing the bottom surface of the cavity 11b of the ceramic laminate 511 or by sucking from the lower surface side of the ceramic laminate 511.

また、セラミック積層体511の下面に設けられる凹部13は、平面透視において、上面に
設けられたキャビティ11ｂの側壁よりも内側から外側となる位置に設けておくことにより、下面に平面透視で搭載部11ａの外周部と重なり、外周部に沿った形状の凹部13を有する配線基板１を効率よく製作することができる。 Further, the concave portion 13 provided on the lower surface of the ceramic laminate 511 is provided at a position that is located on the lower side from the inner side to the outer side of the side wall of the cavity 11b provided on the upper surface in a plan view, so that the mounting portion is provided on the lower surface in a plan view It is possible to efficiently manufacture the wiring board 1 having the concave portion 13 which overlaps with the outer peripheral portion of 11a and has a shape along the outer peripheral portion.

また、上述に示す例では、絶縁基板11は４層の絶縁層より形成しているが、これ以外の層数であっても構わない。   In the example described above, the insulating substrate 11 is formed of four insulating layers, but the number of layers may be other than this.

配線基板１の上面に、電子部品２が搭載することによって電子装置を作製できる。配線基板１に搭載される電子部品２は、ＩＣチップ，ＬＳＩチップ等の半導体素子，発光素子および各種センサ等である。例えば、電子部品２がワイヤボンディング型の半導体素子である場合には、半導体素子は、接合部材によって搭載領域11ａに固定された後、ボンディングワイヤ等の接続部材３を介して半導体素子の電極と配線導体12とが電気的に接続されることによって配線基板１に搭載される。また、配線基板１には、複数の電子部品２を搭載しても良いし、必要に応じて、抵抗素子、容量素子等の小型の電子部品を搭載しても良い。また、電子部品２は必要に応じて、樹脂、ガラス等からなる封止材、樹脂、ガラス、セラミックス、金属等からなる蓋体等により封止される。   An electronic device can be manufactured by mounting the electronic component 2 on the upper surface of the wiring board 1. The electronic component 2 mounted on the wiring board 1 is a semiconductor element such as an IC chip or an LSI chip, a light emitting element, various sensors, and the like. For example, when the electronic component 2 is a wire bonding type semiconductor element, the semiconductor element is fixed to the mounting region 11a by a bonding member, and then the electrodes and wiring of the semiconductor element are connected via the connection member 3 such as a bonding wire. The conductor 12 is mounted on the wiring board 1 by being electrically connected. In addition, a plurality of electronic components 2 may be mounted on the wiring board 1, or small electronic components such as a resistance element and a capacitive element may be mounted as necessary. Further, the electronic component 2 is sealed with a sealing material made of resin, glass or the like, a lid made of resin, glass, ceramics, metal, or the like, as necessary.

本実施形態の配線基板１によれば、上面に電子部品２を搭載するための搭載部11ａを有する絶縁基板11を含み、絶縁基板11は、絶縁基板11の下面に平面透視で搭載部11ａの外周部と重なり、外周部に沿った形状の凹部13を有し、搭載部11ａの中央部は下面側に湾曲していることにより、電子部品２を搭載部11ａに搭載する場合に電子部品２が傾くことはなくなる。   According to the wiring substrate 1 of the present embodiment, the insulating substrate 11 including the mounting portion 11a for mounting the electronic component 2 on the upper surface is included, and the insulating substrate 11 is formed on the lower surface of the insulating substrate 11 with a plan view of the mounting portion 11a. When the electronic component 2 is mounted on the mounting portion 11a, the electronic component 2 overlaps with the outer peripheral portion and has a concave portion 13 having a shape along the outer peripheral portion, and the central portion of the mounting portion 11a is curved to the lower surface side. Will not tilt.

電子部品２が、例えば、撮像素子の場合には、正常な画像が得られるものとすることができる。電子部品２が、例えば、発光素子の場合には、所定の方向に良好に光を放射することができる。   When the electronic component 2 is, for example, an image sensor, a normal image can be obtained. In the case where the electronic component 2 is, for example, a light emitting element, light can be emitted well in a predetermined direction.

本実施形態の電子装置によれば、上記構成の配線基板１と、配線基板１に搭載された電子部品２とを有していることから、電子部品が搭載部に良好に搭載され、特性に関して向上されたものとなる。   According to the electronic device of the present embodiment, since the wiring board 1 having the above-described configuration and the electronic component 2 mounted on the wiring board 1 are included, the electronic component can be satisfactorily mounted on the mounting portion, and the characteristics can be improved. It will be improved.

（第２の実施形態）
次に、本発明の第２の実施形態による電子装置について、図４および図５を参照しつつ説明する。 (Second Embodiment)
Next, an electronic device according to a second embodiment of the present invention will be described with reference to FIGS.

本発明の第２の実施形態における電子装置において、上記した第１の実施形態の電子装
置と異なる点は、図４および図５に示された例のように、絶縁基板11の下面に、平面透視において絶縁基板11の搭載部11ａよりも小さい領域に、金属層15が形成されている点である。 The electronic device according to the second embodiment of the present invention differs from the electronic device according to the first embodiment described above in that a flat surface is formed on the lower surface of the insulating substrate 11 as in the examples shown in FIGS. The metal layer 15 is formed in a region smaller than the mounting portion 11a of the insulating substrate 11 in perspective.

金属層15は、上述の配線導体12と同様の方法により製作されるが、金属層15用の導体ペーストは、セラミック積層体を焼成した際に、セラミック積層体よりも焼成収縮率が小さい、すなわち、セラミック積層体の焼成収縮率よりも小さくなるように焼成収縮率を調整したものが有効に用いられる。例えば、セラミック積層体のキャビティ11ｂの底面を予め上面側に凸状に湾曲となるように形成した後、焼成時に、平面透視で金属層15と重なる領域が下面側に凸状に湾曲するようにしても構わない。   The metal layer 15 is manufactured by the same method as the wiring conductor 12 described above, but the conductor paste for the metal layer 15 has a firing shrinkage rate smaller than that of the ceramic laminate when the ceramic laminate is fired, that is, And what adjusted the firing shrinkage rate so that it may become smaller than the firing shrinkage rate of a ceramic laminated body is used effectively. For example, after the bottom surface of the cavity 11b of the ceramic laminate is formed so as to be curved in a convex shape on the upper surface side in advance, a region overlapping with the metal layer 15 is curved in a convex shape on the lower surface side when seen in plan view. It doesn't matter.

本発明の第２の実施形態の配線基板１によれば、上面に電子部品２を搭載するための搭載部11ａを有する絶縁基板11を含み、絶縁基板11は、絶縁基板11の下面に平面透視で搭載部11ａの外周部と重なり、外周部に沿った形状の凹部13を有し、搭載部11ａの中央部は下面側に湾曲していることにより、電子部品２を搭載部11ａに搭載する場合に電子部品２が傾くことはなくなる。   According to the wiring substrate 1 of the second embodiment of the present invention, the insulating substrate 11 including the mounting portion 11a for mounting the electronic component 2 on the upper surface is included. The electronic component 2 is mounted on the mounting portion 11a by overlapping the outer peripheral portion of the mounting portion 11a and having a concave portion 13 having a shape along the outer peripheral portion, and the central portion of the mounting portion 11a is curved to the lower surface side. In this case, the electronic component 2 does not tilt.

第２の実施形態は、第１の実施形態と比較して、絶縁基板１の厚みが薄い場合に有効に利用することが出来る。   The second embodiment can be effectively used when the thickness of the insulating substrate 1 is smaller than that of the first embodiment.

また、配線基板１は、図１〜図５に示す例のように、搭載部11ａは平面視で矩形状であり、平面透視で矩形状の搭載部11ａの対向する２辺にそれぞれ重なる２つの凹部を有していることから、平面透視で矩形状の搭載部11ａの対向する４辺にそれぞれ重なる４つの凹部を有している場合よりも、搭載部11ａの中央部を下面側に容易に湾曲させることができ、また電子部品２を搭載部11ａに搭載する場合に電子部品２が傾くのを効果的に抑制することができる。   Further, in the wiring board 1, as in the example illustrated in FIGS. 1 to 5, the mounting portion 11 a has a rectangular shape in plan view, and two overlapping portions respectively overlap two opposing sides of the rectangular mounting portion 11 a in plan view. Since it has a concave portion, the center portion of the mounting portion 11a can be more easily placed on the lower surface side than when it has four concave portions that respectively overlap the four opposing sides of the rectangular mounting portion 11a in a plan view. In addition, the electronic component 2 can be effectively bent from being inclined when the electronic component 2 is mounted on the mounting portion 11a.

なお、第２の実施形態においては、絶縁基板11の下面に金属層15を設けているが、金属層15の代わりに、セラミック積層体を焼成する際に、セラミック積層体よりも焼成収縮率が小さい絶縁補助層を用いても構わないし、金属層15の表面を、部分的あるいは全体的に絶縁補助層により被覆しても構わない。   In the second embodiment, the metal layer 15 is provided on the lower surface of the insulating substrate 11. However, when the ceramic laminate is fired instead of the metal layer 15, the firing shrinkage rate is higher than that of the ceramic laminate. A small insulating auxiliary layer may be used, or the surface of the metal layer 15 may be partially or entirely covered with the insulating auxiliary layer.

このような絶縁補助層は、絶縁基板11と実質的に同質のセラミック粉末に適当な有機バインダーおよび溶媒等を添加混合して得たセラミックペーストを、絶縁基板11となるセラミックグリーンシートに予めスクリーン印刷法によって所定のパターンに印刷塗布して、絶縁基板11となるセラミックグリーンシートと同時に焼成することができる。   Such an auxiliary insulation layer is preliminarily screen-printed on a ceramic green sheet to be the insulating substrate 11 by adding a suitable organic binder and solvent to a ceramic powder substantially the same as the insulating substrate 11 and mixing them. A predetermined pattern can be printed and applied by a method and fired simultaneously with the ceramic green sheet to be the insulating substrate 11.

本発明は、上述の実施の形態の例に限定されるものではなく、種々の変更は可能である。例えば、配線導体12の他端部は、絶縁基板11の下面に導出しているが、絶縁基板11の上面や側面に導出しても構わない。例えば、絶縁基板11の側面に溝が設けられており、溝の内面に導体の被着された、いわゆるキャスタレーション導体を有していてもよい。   The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the other end portion of the wiring conductor 12 is led out to the lower surface of the insulating substrate 11, but may be led to the upper surface and side surfaces of the insulating substrate 11. For example, a groove may be provided on the side surface of the insulating substrate 11, and a so-called castellation conductor having a conductor attached to the inner surface of the groove may be provided.

また、図１に示される例のように、絶縁基板11の下面に凹部13が形成されている場合、凹部13の下面に配線導体12の他端部を導出させていても構わない。   Further, as in the example shown in FIG. 1, when the recess 13 is formed on the lower surface of the insulating substrate 11, the other end of the wiring conductor 12 may be led out to the lower surface of the recess 13.

また、図１〜図５に示す例において、凹部13は、平面透視において、電子部品２の対向する２辺に沿って設けているが、例えば、平面透視において、電子部品２の４辺に沿ってて形成しても構わない。   Moreover, in the example shown in FIGS. 1-5, although the recessed part 13 is provided along 2 sides which the electronic component 2 opposes in planar perspective, for example, along 4 sides of the electronic component 2 in planar perspective May be formed.

また、図１〜図５に示す例において、キャビティ11ｂは、平面視における開口が矩形状
であって、断面視における内壁面が垂直形状としているが、平面視における開口が円形状であって、断面視における内壁面が傾斜した形状であっても構わない。キャビティ11ｂが円形状である場合には、搭載される電子部品２の大きさに合わせて、絶縁基板11の下面に平面透視で搭載部11ａの外周に部と重なり、外周部に沿った形状の凹部13を形成しておけばよい。 In the example shown in FIGS. 1 to 5, the cavity 11b has a rectangular opening in a plan view, and the inner wall surface in a sectional view has a vertical shape, but the opening in a plan view has a circular shape, The inner wall surface in cross-sectional view may have an inclined shape. When the cavity 11b has a circular shape, it overlaps with the outer periphery of the mounting portion 11a in plan view on the lower surface of the insulating substrate 11 according to the size of the electronic component 2 to be mounted, and has a shape along the outer peripheral portion. A recess 13 may be formed.

また、配線基板１は、平板形状のものであっても構わないし、絶縁基板11の両面にキャビティ11ｂを有するものであっても構わない。   Further, the wiring board 1 may have a flat plate shape or may have cavities 11b on both surfaces of the insulating substrate 11.

また、配線基板１は、多数個取り配線基板の形態で製作されていても構わない。   Further, the wiring board 1 may be manufactured in the form of a multi-piece wiring board.

１・・・・配線基板
11・・・・絶縁基板
11ａ・・・搭載部
11ｂ・・・キャビティ
12・・・・配線導体
13・・・・凹部
14・・・・湾曲部
15・・・・金属層
２・・・・電子部品
３・・・・接続部材 1 ... Wiring board
11 ... Insulating substrate
11a ・ ・ ・ Mounting part
11b ・ ・ ・ Cavity
12 ... Wiring conductor
13 ... Recess
14 ... Bending part
15 ... Metal layer 2 ... Electronic component 3 ... Connection member

Claims (3)

上面にキャビティおよび電子部品を搭載するための搭載部を有する絶縁基板を含み、
該絶縁基板は、下面に平面透視で前記搭載部の外周部と重なり、該外周部に沿った形状の凹部を有し、前記搭載部の中央部は下面側に湾曲しており、
平面透視において、前記凹部は前記キャビティの側壁よりも内側から外側となる位置に設けられていることを特徴とする配線基板。 Including an insulating substrate having a mounting portion for mounting a cavity and an electronic component on the upper surface;
Insulating substrate overlaps with the outer peripheral portion of the mounting portion in a plan perspective under surface has a recess shape along the outer peripheral portion, the central portion of the mounting portion is curved on the bottom side,
The wiring board according to claim 1 , wherein the concave portion is provided at a position that is on the inner side to the outer side than the side wall of the cavity in a plan view . 前記搭載部は平面視で矩形状であり、平面透視で前記矩形状の前記搭載部の対向する２辺にそれぞれ重なる２つの前記凹部を有していることを特徴とする請求項１に記載の配線基板。   2. The mounting portion according to claim 1, wherein the mounting portion has a rectangular shape in plan view, and has two concave portions that respectively overlap two opposite sides of the mounting portion having a rectangular shape in plan view. Wiring board. 請求項１または請求項２に記載の配線基板と、
前記搭載部に搭載された前記電子部品とを有することを特徴とする電子装置。 The wiring board according to claim 1 or 2 ,
An electronic device comprising: the electronic component mounted on the mounting portion.
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