JP6118288B2 - 窒化物半導体中の炭素濃度測定方法および窒化物半導体の製造方法 - Google Patents
窒化物半導体中の炭素濃度測定方法および窒化物半導体の製造方法 Download PDFInfo
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- JP6118288B2 JP6118288B2 JP2014072250A JP2014072250A JP6118288B2 JP 6118288 B2 JP6118288 B2 JP 6118288B2 JP 2014072250 A JP2014072250 A JP 2014072250A JP 2014072250 A JP2014072250 A JP 2014072250A JP 6118288 B2 JP6118288 B2 JP 6118288B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 79
- 229910052799 carbon Inorganic materials 0.000 title claims description 79
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 150000004767 nitrides Chemical class 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000001237 Raman spectrum Methods 0.000 claims description 23
- 238000001069 Raman spectroscopy Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- 229910002601 GaN Inorganic materials 0.000 description 15
- 238000005259 measurement Methods 0.000 description 13
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 12
- 238000001228 spectrum Methods 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000000691 measurement method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000001530 Raman microscopy Methods 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Description
4インチのSi単結晶基板上に、気相成長法によって、原料としてトリメチルアルミニウム、トリメチルガリウム、アンモニアを適時選択して用い、1000℃の温度にてAlNとGaNを交互に積層して厚さ1μmのバッファ層を形成した。このバッファ層上にトリメチルガリウムとアンモニアを用いて、厚さ1μmの高炭素濃度GaN層を形成した。
得て、図3に示すように、横軸にSIMS炭素濃度値、縦軸に対応する面積強度値をプロットした。
実験1において、740±5cm−1にあるピークの代わりに775±5cm−1にあるピークを用いて、実験1と同様に面積強度値の算出、SIMSとの相関取りを行った。
得て、図4に示すように、横軸にSIMS炭素濃度値、縦軸に対応する面積強度値をプロットした。
2 入射レーザ光
3 鏡
4 散乱光
5 GaN
6 対物レンズ
7 集光レンズ
8 空間スリット
9 検出器
10 分光器
Claims (3)
- AlxGa1-xN(0≦x≦0.3)で表される窒化物半導体中の炭素濃度をラマン分光法で測定する方法であって、690cm−1以上785cm−1以下の範囲に存在するピークを有するラマンスペクトルの面積強度値から前記炭素濃度を同定することを特徴とする窒化物半導体中の炭素濃度測定方法。
- ラマンスペクトルの面積強度値を算出するのに用いるピークは、740±5cm−1、763±5cm−1、775±5cm−1の範囲に存在する各ピークのうち少なくともいずれか1つであることを特徴とする請求項1に記載の窒化物半導体中の炭素濃度測定方法。
- 請求項1または2のいずれかに記載の窒化物半導体中の不純物濃度測定方法を用いて、前記窒化物半導体中の炭素濃度を調節することを特徴とする窒化物半導体の製造方法。
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JPH05160040A (ja) * | 1991-12-04 | 1993-06-25 | Fujitsu Ltd | 半導体結晶成長装置および該装置を用いた結晶成長方法 |
JP2002124702A (ja) * | 2000-10-18 | 2002-04-26 | Sharp Corp | 窒化ガリウム系半導体発光素子 |
JP5381382B2 (ja) * | 2009-06-19 | 2014-01-08 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
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