JP6114972B2 - 増幅回路 - Google Patents
増幅回路 Download PDFInfo
- Publication number
- JP6114972B2 JP6114972B2 JP2013148927A JP2013148927A JP6114972B2 JP 6114972 B2 JP6114972 B2 JP 6114972B2 JP 2013148927 A JP2013148927 A JP 2013148927A JP 2013148927 A JP2013148927 A JP 2013148927A JP 6114972 B2 JP6114972 B2 JP 6114972B2
- Authority
- JP
- Japan
- Prior art keywords
- hemt
- layer
- resistance element
- capacitor
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 11
- 230000007423 decrease Effects 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013148927A JP6114972B2 (ja) | 2013-07-17 | 2013-07-17 | 増幅回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013148927A JP6114972B2 (ja) | 2013-07-17 | 2013-07-17 | 増幅回路 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015023098A JP2015023098A (ja) | 2015-02-02 |
| JP2015023098A5 JP2015023098A5 (enExample) | 2016-09-01 |
| JP6114972B2 true JP6114972B2 (ja) | 2017-04-19 |
Family
ID=52487319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013148927A Active JP6114972B2 (ja) | 2013-07-17 | 2013-07-17 | 増幅回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6114972B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017005139A (ja) * | 2015-06-11 | 2017-01-05 | 三菱電機株式会社 | トランジスタ |
| CN112585751B (zh) * | 2019-04-01 | 2021-11-12 | 新唐科技日本株式会社 | 电阻元件及功率放大电路 |
| CN113646888A (zh) | 2019-04-01 | 2021-11-12 | 新唐科技日本株式会社 | 单片半导体装置以及混合半导体装置 |
| WO2025046981A1 (ja) * | 2023-08-28 | 2025-03-06 | パナソニックホールディングス株式会社 | 窒化物半導体デバイス |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2549574B2 (ja) * | 1990-05-25 | 1996-10-30 | 三菱電機株式会社 | モノリシック集積回路 |
| JP2000101067A (ja) * | 1998-09-18 | 2000-04-07 | Hitachi Ltd | 半導体装置および集積回路装置 |
| JP2002299606A (ja) * | 2001-04-03 | 2002-10-11 | Hitachi Ltd | 半導体装置およびその製造方法 |
-
2013
- 2013-07-17 JP JP2013148927A patent/JP6114972B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015023098A (ja) | 2015-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5238633B2 (ja) | 半導体装置 | |
| CN103986421B (zh) | 用于电源电路的输入匹配网络 | |
| JP6156015B2 (ja) | 半導体装置及びその製造方法 | |
| CN106098769B (zh) | 电流感测比率补偿 | |
| US10608588B2 (en) | Amplifiers and related integrated circuits | |
| CN103117716B (zh) | 高频放大器 | |
| JP6114972B2 (ja) | 増幅回路 | |
| JP2010103236A (ja) | 窒化物半導体装置 | |
| CN111164886B (zh) | 具有环路稳定性的节点分裂的晶体管放大器及其相关方法 | |
| Huang et al. | Suppression of dispersive effects in AlGaN/GaN high-electron-mobility transistors using bilayer SiN x grown by low pressure chemical vapor deposition | |
| Lee et al. | A compact 30-W AlGaN/GaN HEMTs on silicon substrate with output power density of 8.1 W/mm at 8 GHz | |
| Schwantuschke et al. | Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power | |
| Wu et al. | 3-9-GHz GaN-based microwave power amplifiers with LCR broad-band matching | |
| JP5369388B2 (ja) | 半導体装置 | |
| US8427248B2 (en) | Stabilization network and a semiconductor device having the stabilization network | |
| CN105099376B (zh) | 线性化电路 | |
| JP6837602B2 (ja) | 分布型増幅器 | |
| Ersoy et al. | A high-gain X-band GaN-MMIC power amplifier | |
| JP4851577B2 (ja) | 検波回路、及び、高周波回路 | |
| JP2017228966A (ja) | 高周波半導体増幅器 | |
| US11522504B2 (en) | Wideband RF short/DC block circuit for RF devices and applications | |
| US11621672B2 (en) | Compensation of trapping in field effect transistors | |
| CN112003576A (zh) | 提供增益扩展的功率放大器偏置网络 | |
| JP2017005139A (ja) | トランジスタ | |
| US12438103B2 (en) | Transistor including a discontinuous barrier layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160715 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160715 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170221 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170223 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170302 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6114972 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |