JP6111442B2 - Organic EL element, organic EL panel, organic EL light emitting device, and organic EL display device - Google Patents

Description

  The present invention relates to a structure of an organic electroluminescent element (hereinafter referred to as “organic EL element”), and in particular, a technique for improving conductivity between an auxiliary electrode and a common electrode provided apart from a pixel electrode, The present invention relates to a display panel, a light emitting device, and a display device including the organic EL element.

  In recent years, various functional elements using organic semiconductors have been researched and developed, and an organic EL element is a typical functional element. The organic EL element is a current-driven light-emitting element and has a configuration in which a functional layer including a light-emitting layer made of an organic material is provided between an electrode pair made of a pixel electrode and a common electrode. The organic EL element applies a voltage between the electrode pair to recombine holes injected from the pixel electrode into the functional layer and electrons injected from the common electrode into the functional layer, thereby generating an electroluminescence phenomenon. To emit light. As described above, since the organic EL element performs self-emission and has high visibility and is a complete solid element, it is excellent in impact resistance. Use is drawing attention.

  Generally, the common electrode in the organic EL display panel is provided so as to cover the entire panel surface on which the organic EL elements are arranged. A voltage source is connected to the common electrode so that a voltage is applied from the outside at the periphery of the panel. Therefore, a voltage is applied from the voltage source to the central region of the panel via the electric resistance of the common electrode. As a result, even when the same voltage is output from the voltage source, the voltage applied to each light emitting layer varies greatly between the central region and the peripheral region in the panel surface, and the luminance of the organic EL element also varies. There is a fear. In order to solve this problem, by applying a voltage to each light emitting layer using an auxiliary wiring having a resistance lower than that of the common electrode together with the common electrode, variation in the voltage applied to each light emitting layer in the panel surface is suppressed. A light emitting device has been proposed (Patent Document 1).

JP 2007-73499 A

: Kaname Kanai et al. , Organic Electronics 11, 188 (2010).

  By the way, in recent years, various display panels provided with organic EL elements have become larger. When the display panel is enlarged, the electric resistance until a voltage is applied from the voltage source to the central region of the panel through the electric resistance of the common electrode is increased. Thereby, the variation of the voltage applied to each light emitting layer in a panel surface via a common electrode is large. When the variation of the voltage becomes large, uneven brightness in the panel surface becomes remarkable.

  This invention is made | formed in view of the above, Comprising: It aims at providing the organic EL element which suppressed further the dispersion | variation in the voltage applied to each light emitting layer in a panel surface.

  In order to achieve the above object, an organic EL element according to one embodiment of the present invention is an organic EL element in which a pixel region and an auxiliary region are provided adjacent to each other on a substrate as a base, A pixel electrode provided in a part corresponding to a pixel region; an auxiliary wiring provided in a part corresponding to an auxiliary region on the substrate; a first functional layer provided on the pixel electrode and on the auxiliary wiring; A light emitting layer including an organic light emitting material provided in a portion corresponding to a pixel region on one functional layer; a second functional layer provided in a portion corresponding to an auxiliary region on the light emitting layer and on the first functional layer; A common electrode provided continuously from the pixel region equivalent portion to the auxiliary region equivalent portion on the two functional layers, wherein the first functional layer includes an oxide of a transition metal, and the second functional layer is Less than alkali metal and alkaline earth metal Also includes one of a fluoride, the common electrode may include a metal having a reducing property to fluoride contained in the second functional layer.

  In the organic EL device according to one embodiment of the present invention, the first functional layer includes an oxide of a transition metal, the second functional layer includes at least one fluoride of an alkali metal and an alkaline earth metal, and the common electrode includes Since a metal having a reducing property with respect to the fluoride contained in the second functional layer is included, variation in voltage applied to each light emitting layer in the panel surface can be further suppressed.

It is a schematic block diagram which shows schematic structure of the organic electroluminescence display panel which concerns on embodiment. FIG. 2 is a top view showing a layout of light emitting layers and auxiliary wirings in the organic EL display panel shown in FIG. 1. It is sectional drawing of the organic electroluminescence display panel shown in FIG. 2A and 2B are cross-sectional views illustrating a method of manufacturing the organic EL display panel shown in FIG. 1, wherein FIG. 1A is a step of forming a pixel electrode and an auxiliary wiring, FIG. 2B is a step of forming a hole injection layer, and FIG. It is sectional drawing which shows the process of forming a layer, respectively. 2A and 2B are cross-sectional views showing a method for manufacturing the organic EL display panel shown in FIG. 1, wherein FIG. 1A shows a step of forming a hole transport layer and a light emitting layer, and FIG. FIG. (A) It is a schematic cross section of the organic EL display panel shown in FIG. 1, and (b) is a partially enlarged view of the cross section shown in (a). (A) It is a figure explaining the structure of each layer provided on the auxiliary | assistant wiring of the organic electroluminescence display panel shown in FIG. 1, (b) It was provided on the pixel electrode of the organic electroluminescence display panel shown in FIG. It is a figure explaining the structure of each layer. It is a figure which shows the coupling energy by the XPS measurement of the hole injection layer on the auxiliary wiring and pixel electrode of the organic EL display panel shown in FIG. It is a figure explaining the effect in the organic electroluminescence display panel shown in FIG.

[Background of obtaining one embodiment of the present invention]
Hereinafter, prior to specific description of the embodiments of the present invention, the background for obtaining the embodiments of the present invention will be described.

  As described above, in recent years, with the increase in size of various display panels including organic EL elements, there has been an increasing demand for suppressing variations in voltage applied to each light emitting layer in the panel surface. On the other hand, the inventors tried to respond to this request by improving the conductivity between the auxiliary wiring and the common electrode.

  Here, when considering a panel configured such that a pixel area on which a pixel electrode is provided and an auxiliary area on which an auxiliary wiring is provided adjacent to the substrate as a base, at least a portion corresponding to the pixel area on the substrate. It can be said that a functional layer for improving the hole injection property and the electron injection property is provided. Here, among the functional layers, those formed by a wet process method using an ink jet method or the like are formed only in a portion corresponding to the pixel region. On the other hand, among the functional layers, those formed by a sputtering method, a vacuum deposition method, or the like are often formed over the panel surface, and are often provided also in a portion corresponding to the auxiliary region. Therefore, the inventors have considered improving the conductivity between the auxiliary wiring and the common electrode by improving the conductivity of the portion corresponding to the auxiliary region of the functional layer.

  By the way, the functional layer may include an oxide of a transition metal that can have different valences. Then, the inventors configure a functional layer including an oxide of a transition metal that improves conductivity when a small valence is taken, and further reduce the valence of the transition metal contained in the portion corresponding to the auxiliary region of the functional layer. Thought to do. As a result, the conductivity of the functional layer corresponding to the auxiliary region can be improved, and the conductivity between the auxiliary wiring and the common electrode can be improved, and the variation in the voltage applied to each light emitting layer in the panel surface It has become clear that this can be further suppressed. The aspect of the present invention has been obtained by such circumstances.

Hereinafter, the organic EL element according to the embodiment of the present invention will be described, and then the results and discussion of each performance confirmation experiment of the present invention will be described. In addition, the member reduced scale in each drawing differs from an actual thing.

[Summary of One Embodiment]
An organic EL element according to an aspect of the present invention is an organic EL element according to an aspect of the present invention, in which a pixel region and an auxiliary region are provided adjacent to each other on a substrate. A pixel electrode provided in a portion corresponding to the pixel region on the substrate, an auxiliary wiring provided in a portion corresponding to the auxiliary region on the substrate, and a first function provided on the pixel electrode and the auxiliary wiring. A light emitting layer including an organic light emitting material, and a second function provided on a portion corresponding to an auxiliary region on the light emitting layer and on the first functional layer. And a common electrode provided continuously from the pixel region equivalent site to the auxiliary region equivalent site on the second functional layer, wherein the first functional layer includes an oxide of a transition metal, The second functional layer is made of alkali metal and alkaline earth metal Out comprises at least one fluoride, said common electrode comprises a metal having a reducing property to fluoride contained in the second functional layer.

  Thereby, the organic EL element which suppressed further the dispersion | variation in the voltage applied to each light emitting layer in a panel surface can be provided.

  Further, the maximum value of the thickness of the portion corresponding to the auxiliary region of the second functional layer may be equal to or less than the maximum height Rmax of the surface roughness of the portion corresponding to the auxiliary region of the first functional layer.

  In addition, at least the top of the portion corresponding to the auxiliary region of the first functional layer may be in contact with the common electrode.

  Further, the shape of the XPS spectrum from the peak position of the lowest binding energy in the portion corresponding to the auxiliary region of the first functional layer to the energy lower by 3.6 eV has the lowest binding energy in the portion corresponding to the pixel region of the first functional layer. The shape may be higher than the shape of the XPS spectrum from the peak position to an energy lower by 3.6 eV.

  The average value of the valence of the transition metal contained in the portion corresponding to the auxiliary region of the first functional layer is smaller than the average value of the valence of the transition metal contained in the portion corresponding to the pixel region of the first functional layer. Also good.

  The transition metal may be W, Mo, or V.

The second functional layer may include NaF, BaF ₂ , CaF ₂ , CsF, or MgF ₂ as the fluoride.

  Further, the metal having reducibility may be any of Al, Cu, Ag, and Mg.

  Furthermore, the organic EL panel which is one embodiment of the present invention includes a plurality of the organic EL elements.

  Furthermore, the organic EL light emitting device which is one embodiment of the present invention includes the organic EL element and a circuit for driving the organic EL element.

  Furthermore, the organic EL display device which is one embodiment of the present invention includes the organic EL element and a circuit for driving the organic EL element.

[Embodiment]
<Embodiment 1>
1. Overall Configuration Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic block diagram showing a schematic configuration of a light emitting device including an organic EL display panel 1 according to Embodiment 1 of the present invention. The organic EL display panel 1 is a top emission type in which light from the light emitting layer is extracted from the opposite side of the glass substrate. Specifically, the common electrode made of Al (aluminum) provided on the organic EL display panel 1 has a very small thickness, and the common electrode has a light transmitting property. The organic EL display panel 1 is, for example, a coating type that is manufactured by applying an organic functional layer by a wet process.

  As shown in FIG. 1, the organic EL display panel 1 is connected to a drive circuit 3, and the drive circuit 3 is controlled by a control circuit 5. The organic EL display panel 1 is a light emitting device that utilizes an electroluminescence phenomenon of an organic material, and is configured by arranging a plurality of organic EL elements. In the actual light emitting device, the arrangement of the drive circuit 3 and the control circuit 5 is not limited to this.

  FIG. 2A is a top view showing a layout of the light emitting layer and the auxiliary wiring in the organic EL display panel shown in FIG. The light emitting layers 107 formed in a rectangular shape having the same area are arranged in a matrix. The auxiliary wiring 110 is formed so as to extend in the column direction (Y direction), and is disposed so as to sandwich three light emitting layers 107 arranged in the row direction (X direction).

  FIG. 3 is a cross-sectional view of the organic EL display panel shown in FIG. FIG. 3 corresponds to the AA ′ sectional view of FIG. 2.

  The organic EL display panel 1 includes a glass substrate 100 and a TFT substrate 112 including a TFT (thin film transistor) layer 101, an interlayer insulating layer 102, and a planarizing layer 103. The TFT layer 101 includes electrodes 101a, 101b, and 101c, a source electrode 101d, and a drain electrode 101e. Further, the organic EL display panel 1 is provided with a pixel region 120 and an auxiliary region 121 adjacent to each other in the horizontal direction (X direction) on the TFT substrate 112 as a base. Hereinafter, the portion corresponding to the pixel region 120 of each layer refers to a portion of each layer provided above the pixel region 120 of the TFT substrate 112. Similarly, the portion corresponding to the auxiliary region 121 means a portion of each layer provided above the auxiliary region 121 of the TFT substrate 112.

In addition, the organic EL display panel 1 includes pixels adjacent to the pixel electrode 104 provided in the portion corresponding to the pixel region 120 on the TFT substrate 112 and the auxiliary wiring 110 provided in the portion corresponding to the auxiliary region 121 on the TFT substrate 112. A partition layer 111 formed between the electrodes 104 and between the adjacent pixel electrode 104 and the auxiliary wiring 110 is provided. The pixel electrode 104 is formed above the TFT layer 101 formed on the TFT substrate 112. The shape of the partition layer 111 is tapered in this cross section. Further, the organic EL display panel 1 is provided in a hole injection layer 105 continuously provided as a first functional layer on the pixel electrode 104 and the auxiliary wiring 110, and a portion corresponding to the pixel region 120 on the hole injection layer 105. A hole transport layer 106, a light emitting layer 107 provided on the hole transport layer 106, an electron injection layer 108 provided as a second functional layer on the light emitting layer 107 and a portion corresponding to the auxiliary region 121 on the hole injection layer 105, A common electrode 109 continuously provided on the electron injection layer 108. The hole injection layer 105 may be continuously provided on the pixel electrode 104 and the auxiliary wiring 110 as described above, or may be disconnected depending on the thickness of the hole injection layer 105 and the manufacturing method. A DC power supply is connected to the pixel electrode 104, the common electrode 109, and the auxiliary wiring 110 via the drive circuit 3 shown in FIG. 1, and a voltage is applied from the outside of the organic EL display panel 1. As a result, power is supplied to the organic EL display panel 1.
2. Material of Each Layer The glass substrate 100 is made of non-alkali glass. The material of the glass substrate 100 is not limited to this. For example, soda glass, non-fluorescent glass, phosphate glass, borate glass, quartz, acrylic resin, styrene resin, polycarbonate resin, epoxy resin, polyethylene, polyester, Either a silicon-based resin or an insulating material such as alumina can be used.

  The pixel electrode 104 has a laminated structure of an aluminum alloy and ITO (indium tin oxide). The material of the pixel electrode 104 is not limited to this, and for example, a silver alloy and a laminated structure made of any one of IZO and ZnO can be used.

The hole injection layer 105 is made of WO _x (tungsten oxide).

  The hole transport layer 106 is an amine compound TFB (poly (9,9-di-n-octylfluorene-alt- (1,4-phenylene-((4-sec-butylphenyl) imino) -1,4-phenylene). )).

  The light-emitting layer 107 is made of F8BT (poly (9, 9-di-n-octylfluorene-alt-benzothiazole)), which is an organic polymer. The material of the light emitting layer 107 is not limited to this, and a known organic material may be used. Examples of the material of the light emitting layer 107 include an oxinoid compound, a perylene compound, a coumarin compound, an azacoumarin compound, an oxazole compound, an oxadiazole compound, a perinone compound, a pyrrolopyrrole compound, a naphthalene compound, and anthracene described in JP-A-5-163488. Compound, fluorene compound, fluoranthene compound, tetracene compound, pyrene compound, coronene compound, quinolone compound and azaquinolone compound, pyrazoline derivative and pyrazolone derivative, rhodamine compound, chrysene compound, phenanthrene compound, cyclopentadiene compound, stilbene compound, diphenylquinone compound, styryl Compound, butadiene compound, dicyanomethylenepyran compound, dicyanomethylenethiopyran compound, fluorescein compound , Pyrylium compound, thiapyrylium compound, serenapyrylium compound, telluropyrylium compound, aromatic ardadiene compound, oligophenylene compound, thioxanthene compound, cyanine compound, acridine compound, metal complex of 8-hydroxyquinoline compound, metal complex of 2-bipyridine compound A fluorescent substance such as a complex of a Schiff salt and a group III metal, an oxine metal complex, or a rare earth complex can be used.

  The electron injection layer 108 is made of NaF (sodium fluoride).

  The common electrode 109 is made of Al.

The auxiliary wiring 110 has a laminated structure of the same aluminum alloy and ITO (indium tin oxide) as the pixel electrode 104.
3. Manufacturing Method of Organic EL Display Panel 1 Next, a manufacturing method of the organic EL display panel 1 will be exemplified.

  4 and 5 are cross-sectional views showing a method for manufacturing the organic EL display panel 1 shown in FIG.

  First, as shown in FIG. 4A, the pixel electrode 104 and the auxiliary wiring 110 made of aluminum alloy and ITO are formed on the TFT substrate 112. Specifically, first, the TFT substrate 112 is placed in a chamber of a sputter deposition apparatus. Then, an aluminum alloy or ITO film is formed on the TFT substrate 112 by sputtering the target material while introducing a reactive gas into the chamber. Further, a photoresist film is applied on the ITO film, and pattern exposure, development, and baking are performed on the photoresist film to form a mask pattern. The shape of the mask pattern corresponds to the pixel electrode 104 and the auxiliary wiring 110, respectively. Thereafter, the ITO film on which the mask pattern is formed is etched using an etching solution. Through these steps, the pixel electrode 104 and the auxiliary wiring 110 having a laminated structure of an aluminum alloy and ITO (indium tin oxide) are formed on the TFT substrate 112.

Next, as shown in FIG. 4B, a hole injection layer 105 containing WO _x is formed continuously on the pixel electrode 104 and the auxiliary wiring 110. In order to form a metal film such as WO _x , a sputtering method is used to form the hole injection layer 105. Specifically, argon is ionized by applying a high voltage in a chamber into which argon gas and oxygen gas are introduced, and the argon ions collide with the target. Due to the collision of argon ions with the target, W particles released from the target react with oxygen gas to become WO _x . Thereby, a hole injection layer 105 made of WO _x is formed over the pixel electrode 104 and the auxiliary wiring 110. Here, since the hole injection layer 105 is a thin film having a thickness of 1 nm to 50 nm, the maximum height Rmax of the surface roughness of the hole injection layer 105 is about 1 nm to 15 nm.

  Further, as shown in FIG. 4C, a partition wall layer 111 is formed between the adjacent pixel electrodes 104 and between the adjacent pixel electrodes 104 and the auxiliary wiring 110. Specifically, first, a material layer of the partition wall layer 111 is stacked using, for example, a spin coat method so as to cover the hole injection layer 105. Next, a mask is formed above the material layer of the partition wall layer 111. The shape of the mask is a shape in which an opening is provided at a position where the partition layer 111 is to be formed. By patterning using the photolithography method in this state, the partition wall layer 111 can be formed between the adjacent pixel electrodes 104 and between the adjacent pixel electrodes 104 and the auxiliary wiring 110.

  Next, as shown in FIG. 5A, a hole transport layer 106 and a light emitting layer 107 are sequentially formed on the hole injection layer 105 in a portion corresponding to the pixel region 120. Specifically, for example, an ink containing an organic material and a solvent may be dropped onto a portion corresponding to the pixel region 120 on the surface of the hole injection layer 105 by a wet process using an inkjet method, and the solvent may be volatilized and removed. Accordingly, the hole transport layer 106 and the light emitting layer 107 can be sequentially formed on the hole injection layer 105 in a portion corresponding to the pixel region 120. Note that the method for forming the hole transport layer 106 and the light emitting layer 107 is not limited to the ink jet method. For example, the ink may be dropped and applied by a known method such as spin coating, gravure printing, dispenser, nozzle coating, intaglio printing, or relief printing.

  Finally, as shown in FIG. 5B, the electron injection layer 108 and the common electrode 109 are sequentially formed on the surface of the light emitting layer 107 and the hole injection layer 105 corresponding to the auxiliary region 121. In order to form a metal film such as NaF or Al, a vacuum evaporation method is used to form the electron injection layer 108 and the common electrode 109.

  Although not shown in FIG. 3, after the organic EL display panel 1 is completed, a sealing layer may be further provided on the surface of the common electrode 109 in order to suppress exposure of the electrode pair and various functional layers to the atmosphere. it can. Specifically, for example, a sealing layer made of SiN (silicon nitride), SiON (silicon oxynitride) or the like may be provided so as to internally seal the organic EL display panel 1. Further, instead of the sealing layer, a sealing can that spatially isolates the entire organic EL display panel 1 from the outside may be provided. Specifically, for example, a sealing can made of the same material as the glass substrate 100 may be provided, and a getter agent that adsorbs moisture or the like may be provided inside the sealed space.

The organic EL display panel 1 is completed through the above steps.
4). Conductivity between the auxiliary wiring 110 and the common electrode 109 Hereinafter, after describing the configuration of each layer provided on the auxiliary wiring 110 and the pixel electrode 104, the conductivity between the auxiliary wiring 110 and the common electrode 109 is described. The improvement mechanism is described.
4-1. Configuration of Each Layer Provided on Auxiliary Wiring 110 and Pixel Electrode 104 FIG. 6A is a schematic cross-sectional view of the organic EL display panel 1 shown in FIG. FIG. 6B is an enlarged view of a region on the auxiliary wiring 110 in the cross-sectional view shown in FIG. 6A, that is, a region β surrounded by a dotted line.

  As shown in FIG. 6A, a hole injection layer 105, a hole transport layer 106, a light emitting layer 107, an electron injection layer 108, and a common electrode 109 are provided on the pixel electrode 104. On the other hand, a hole injection layer 105, an electron injection layer 108, and a common electrode 109 are provided on the auxiliary wiring 110.

As shown in FIG. 6B, the surface of the hole injection layer 105 is rough on the auxiliary wiring 110. This is because the hole injection layer 105 is a thin film having a thickness of 1 nm to 50 nm as described above. In addition, the maximum thickness value Lmax of the electron injection layer 108 is equal to or less than the maximum roughness value Rmax of the hole injection layer 105. Here, since the thickness of the electron injection layer 108 is 0.5 nm to 10 nm, when the surface of the underlying hole injection layer 105 is rough, the electron injection layer 108 is formed by vacuum evaporation. However, the electron injection layer 108 has a portion having a large thickness and a portion having a small thickness. In this configuration, the smallest thickness of the electron injection layer 108 is zero. Therefore, the electron injection layer 108 is buried in the recess of the hole injection layer 105, and a portion where the common electrode 109 is in contact with the top 105 a of the hole injection layer 105 is generated.
4-2. Conductivity between Auxiliary Wiring 110 and Common Electrode 109 FIG. 7A is a diagram for explaining the configuration of each layer provided on the auxiliary wiring 110 of the organic EL display panel 1 shown in FIG. Immediately after the common electrode 109 is formed, and the right side corresponds to a certain time after the common electrode 109 is formed. FIG. 7B is a diagram illustrating the configuration of each layer provided on the pixel electrode 104 of the organic EL display panel 1 shown in FIG.

As shown on the left side of FIG. 7A, in the hole injection layer 105 made of WO _x on the auxiliary wiring 110, W having a valence of +6 (hereinafter referred to as W ⁶⁺ ) and a valence of +5 W (hereinafter referred to as W ⁵⁺ ) and W having a valence of +4 (hereinafter referred to as W ⁴⁺ ) are mixed. Note that W can take a valence of +6, +5, +4, +3, or the like.

When a certain time has elapsed since the formation of the common electrode 109, W ⁶⁺ in the hole injection layer 105 is reduced in a region γ where the common electrode 109 and the hole injection layer 105 are in contact with each other, as shown on the right side of FIG. And change to W ⁵⁺ . This is because aluminum constituting the common electrode 109 has a reducing property. Even when the common electrode 109 and the hole injection layer 105 are not in contact, if the electron injection layer 108 is sufficiently thin, reduction of W ⁶⁺ in the hole injection layer 105 by aluminum constituting the common electrode 109 can occur. . Here, sufficiently thin means that the thickness of the electron injection layer 108 is, for example, 0.1 nm to 1 nm.

By the way, in WO _x , the maximum valence that W can take is +6. Therefore, it can be said that WO _x containing W ⁵⁺ has a structure similar to oxygen defects. Here, there is a report that the material constituting the hole injection layer 105 has a structure similar to an oxygen defect, whereby the hole conduction efficiency of the hole injection layer is improved by the electron level based on the structure (Non-Patent Document 1). ). Based on this report, it is considered that the conductivity of W ⁵⁺ is larger than the conductivity of W ⁶⁺ .

By the way, when Al constituting the common electrode 109 reduces W ⁶⁺ , O ²⁻ is generated from WO _x , and AlO _x (aluminum oxide) is formed by O ²⁻ and Al ³⁺ . However, the possibility that AlO _x is formed in the entire vicinity of the region γ is low. This will be described below.

Al constituting the common electrode 109 has a function of reducing Na ⁺ contained in NaF constituting the electron injection layer 108 to Na as well as W ⁶⁺ constituting the hole injection layer. Here, even if Al constituting the common electrode 109 reduces Na ⁺ , no O ²⁻ is generated, so that AlO _x is not formed. As a result, AlO _x having a lower conductivity than Al is formed in a part near the region γ. Therefore, the current that flows from the auxiliary wiring 110 through W ⁵⁺ of the hole injection layer 105 can flow to Al of the common electrode 109.

From the above, it can be said that the conductivity between the common electrode 109 and the hole injection layer 105 is improved on the auxiliary wiring 110.
4-3. Conductivity between the pixel electrode 104 and the common electrode 109 On the auxiliary wiring 110, the conductivity between the common electrode 109 and the hole injection layer 105 is required to be further improved. As a function required for the hole injection layer 105, holes that are balanced with electrons injected from the common electrode 109 are injected from the pixel electrode 104, and among the electrons injected from the common electrode 109, holes are emitted from the light emitting layer. For example, the electrons flowing out to the injection layer 105 side are blocked and stayed in the light emitting layer. As shown in FIG. 7B, on the pixel electrode 104, a hole transport layer 106, a light emitting layer 107, and an electron injection layer 108 are provided between the common electrode 109 and the hole injection layer 105. Therefore, the reducing property of aluminum constituting the common electrode 109 does not reach the W of the hole injection layer 105. As a result, it is possible to achieve both an appropriate hole injecting property and an electron blocking property required for the light emitting characteristics, and to improve the light emitting characteristics of the light emitting layer 107.
5. Effect 5-1. Measurement of resistance between the auxiliary wiring 110 and the common electrode 109 In order to confirm the effect of the present embodiment, a resistance measurement experiment between the auxiliary wiring 110 and the common electrode 109 is performed, and the auxiliary wiring 110 and the common electrode 109 are measured. The electrical conductivity between was investigated. FIG. 8 is a diagram illustrating the measurement results of the resistance by the structure on each auxiliary wiring, and explaining the effect of the organic EL display panel 1 shown in FIG. Sample A has a structure in which a common electrode made of WO _x , which is a first functional layer, an organic electron injection layer material doped with alkaline earth metal, and ITO is laminated on an auxiliary wiring. Sample B, on the auxiliary wiring is the first functional layer WO _x, functional layer comprising NaF, a structure formed by laminating a common electrode made of an alkaline earth metal doped organic electron injection layer material, and the ITO. Sample C has a structure in which a common electrode made of aluminum is stacked on an electrode made of WO _{x as} a first functional layer on an auxiliary wiring. Sample D has a structure in which a functional layer containing NaF and a common electrode made of aluminum are laminated on an electrode made of WO _x which is the first functional layer on the auxiliary wiring, and corresponds to this embodiment.

As shown in FIG. 8, the contact resistances of samples A, B, C, and D are 2.74E + 5 [Ω], 1.80E + 6 [Ω], 4.22E + 3 [Ω], and 2.34E + 3 [Ω], respectively. It has become. Thus, it can be said that the conductivity is highest in the sample D, that is, in the present embodiment.
5-2. XPS Measurement In order to confirm the valence of WO _x contained in the hole injection layer 105 on the auxiliary wiring 110 and the pixel electrode 104, an X-ray photoelectron spectroscopy (XPS) measurement experiment was performed.

(XPS measurement conditions)
Equipment used: X-ray photoelectron spectrometer PHI5000 VersaProbe (manufactured by ULVAC-PHI)
Light source: Al Kα ray Photoelectron emission angle: 45 degrees with respect to the substrate normal direction Measurement point interval: 0.1 eV
The analysis of the peak was performed using photoelectron spectroscopic analysis software “PHI Multipak”.

  FIG. 9 is a diagram showing the binding energy by XPS measurement of the hole injection layer 105 on the auxiliary wiring 110 and the pixel electrode 104 of the organic EL display panel 1 shown in FIG. The horizontal axis in FIG. 9 indicates relative binding energy (ev), and the binding energy decreases from the left to the right of the page. The vertical axis in FIG. 9 indicates the relative intensity. In FIG. 9, graph a corresponds to the hole injection layer 105 on the pixel electrode 104, and graph b corresponds to the hole injection layer 105 on the auxiliary wiring 110.

As shown in FIG. 9, the shape of the XPS spectrum from the lowest binding energy peak position to 3.6 eV lower energy in the portion corresponding to the auxiliary region 121 of the hole injection layer 105 is in the portion corresponding to the pixel region 120 of the hole injection layer 105. The shape is higher than the shape of the XPS spectrum from the peak position of the lowest binding energy to the energy lower by 3.6 eV. Thus, it was confirmed that the conductivity of the hole injection layer 105 was different on the auxiliary wiring 110 and the pixel electrode 104. Since the portion corresponding to the pixel region 120 of the hole injection layer 105 is a WO _x having a structure that is raised (not necessarily a peak) in a region of binding energy that is about 3.6 eV lower than the lowest binding energy peak position. It is considered that excellent conductivity can be exhibited in the organic EL element.
5-3. Effect As described above, it can be said that the portion of the hole injection layer 105 provided on the auxiliary wiring 110 has higher conductivity than the portion of the hole injection layer 105 provided on the pixel electrode 104. Specifically, WO _x constituting the hole injection layer 105 is a collection of Ws having various valences such as the above-mentioned maximum valence (+6) and valences lower than the maximum valence (+5, +4). Although it is configured, when viewed as a whole of the hole injection layer 105, the average valence of these various valences is obtained. The average value of the valence of W included in the portion corresponding to the auxiliary region 121 of the hole injection layer 105 is smaller than the average value of the valence of W included in the portion corresponding to the pixel region 120 of the hole injection layer 105. Therefore, in the organic EL element having this configuration, it is possible to further suppress variations in the voltage applied to each light emitting layer 107 within the panel surface. As a result, luminance unevenness within the panel surface can be further suppressed.
[Modification]
The organic EL element according to one embodiment of the present invention is not limited to the structure described in the above embodiment mode. Hereinafter, the modification will be specifically described.
1. Layer Configuration of Organic EL Element The organic EL element according to one embodiment of the present invention is not limited to the top emission type, and may be a so-called bottom emission type configuration.

In the above embodiment, the hole transport layer and the light emitting layer are provided between the hole injection layer and the electron injection layer. However, the present invention is not limited to this, and the hole transport layer can be omitted when the combination of layers included between the anode and the light emitting layer smoothly injects holes from the anode to the light emitting layer. . That is, only the light emitting layer may be provided between the hole injection layer and the electron injection layer.
2. Auxiliary Wiring, Electron Injection Layer, and Common Electrode Material In the above-described embodiments and the like, the auxiliary wiring includes WO _x , the electron injection layer includes NaF, and the common electrode includes aluminum. However, the present invention is not limited thereto. Hereinafter, modified examples of the material will be described.
2-1. Auxiliary Wiring In the above-described embodiment and the like, the auxiliary wiring is configured to include WO _x , but is not limited thereto. The auxiliary wiring is not limited to WO _x and may be any structure including any transition metal oxide. The transition metal refers to Mo (molybdenum), V (vanadium), and the like.
2-2. Electron Injection Layer In the above-described embodiment and the like, the electron injection layer is configured to contain NaF, but the present invention is not limited to this. The electron injection layer is not limited to NaF, but may be any structure that includes an alkali metal fluoride or an alkaline earth metal fluoride. Moreover, the structure containing several types of alkali metal fluoride and alkaline-earth metal may be sufficient. The alkali metal refers to Na, Li (lithium), and Cs (cesium), and the alkaline earth metal refers to Ca (calcium), Ba (barium), and Mg (magnesium). In addition, the electron injection layer is not limited to fluoride, and may be configured to include an alkali metal simple substance or an alkaline earth metal simple substance.
2-3. Common electrode In the above-described embodiment and the like, the common electrode is configured to contain Al, but this is not a limitation. As the common electrode, any of metals having reducibility such as Cu, Ag, and Mg can be considered.
3. Application Example of Organic EL Element The organic EL element according to one embodiment of the present invention can be applied to an organic EL panel, an organic EL light emitting device, and an organic EL display device. By applying to an organic EL panel, an organic EL light emitting device, and an organic EL display device, it is possible to suppress luminance unevenness of these devices and realize a device having excellent light emission characteristics.

  For the organic EL panel, one organic EL element may be arranged, or a plurality of organic EL elements corresponding to red, green, and blue pixels emitting the same color may be arranged, or the same color. A plurality of organic EL elements may be arranged. The organic EL light emitting device can be used for, for example, a lighting device. The organic EL display device can be used for an organic EL display, for example.

  The organic EL element of the present invention can be suitably used for an organic EL device used for, for example, various display devices for home use or public facilities, or for business use, television devices, displays for portable electronic devices, and the like.

DESCRIPTION OF SYMBOLS 1 Organic EL display panel 3 Drive circuit 5 Control circuit 100 Substrate 101 TFT layer 102 Interlayer insulation layer 103 Planarization layer 104 Pixel electrode 105 Hole injection layer 106 Hole transport layer 107 Light emitting layer 108 Electron injection layer 109 Common electrode 110 Auxiliary wiring 111 Partition Layer 112 TFT substrate

Claims (11)

An organic EL element in which a pixel region and an auxiliary region are provided adjacent to each other with a substrate as a base,
A pixel electrode provided in a portion corresponding to a pixel region on the substrate;
Auxiliary wiring provided in a portion corresponding to the auxiliary region on the substrate,
A first functional layer provided on the pixel electrode and the auxiliary wiring;
A light emitting layer that is provided in a portion corresponding to the pixel region on the first functional layer and includes an organic light emitting material;
A second functional layer provided in a portion corresponding to the auxiliary region on the light emitting layer and the first functional layer;
A common electrode continuously provided from the pixel region equivalent portion on the second functional layer to the auxiliary region equivalent portion;
With
Wherein the first functional layer is made of oxide of a transition metal,
The second functional layer includes at least one fluoride of alkali metal and alkaline earth metal,
The common electrode includes a metal having reducibility with respect to fluoride contained in the second functional layer.
Organic EL element. The maximum value of the thickness of the portion corresponding to the auxiliary region of the second functional layer is equal to or less than the maximum height Rmax of the surface roughness of the portion corresponding to the auxiliary region of the first functional layer.
The organic EL element according to claim 1. At least the top of the portion corresponding to the auxiliary region of the first functional layer is in contact with the common electrode;
The organic EL device according to claim 2. The shape of the XPS spectrum from the lowest binding energy peak position in the auxiliary region corresponding portion of the first functional layer to the lower energy of 3.6 eV is the lowest binding energy peak position in the pixel region corresponding portion of the first functional layer. From the shape of the XPS spectrum up to 3.6 eV lower energy,
The organic EL element according to claim 1. The average value of the valence of the transition metal contained in the portion corresponding to the auxiliary region of the first functional layer is smaller than the average value of the valence of the transition metal contained in the portion corresponding to the pixel region of the first functional layer.
The organic EL element according to claim 1. The transition metal is any one of W, Mo, and V.
The organic EL element according to claim 1. The second functional layer contains any one of NaF, BaF ₂ , CaF ₂ , CsF, and MgF ₂ as the fluoride.
The organic EL element according to claim 1. The metal having the reducing property is any one of Al, Cu, Ag, and Mg.
The organic EL element according to claim 1.   An organic EL panel comprising a plurality of the organic EL elements according to claim 1.   An organic EL light emitting device comprising the organic EL element according to claim 1 and a circuit for driving the organic EL element.   An organic EL display device comprising the organic EL element according to claim 1 and a circuit for driving the organic EL element.

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