JP6110693B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6110693B2
JP6110693B2 JP2013044631A JP2013044631A JP6110693B2 JP 6110693 B2 JP6110693 B2 JP 6110693B2 JP 2013044631 A JP2013044631 A JP 2013044631A JP 2013044631 A JP2013044631 A JP 2013044631A JP 6110693 B2 JP6110693 B2 JP 6110693B2
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JP
Japan
Prior art keywords
oxide semiconductor
semiconductor film
film
oxide
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013044631A
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English (en)
Japanese (ja)
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JP2013219335A (ja
JP2013219335A5 (enExample
Inventor
耕生 野田
耕生 野田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013044631A priority Critical patent/JP6110693B2/ja
Publication of JP2013219335A publication Critical patent/JP2013219335A/ja
Publication of JP2013219335A5 publication Critical patent/JP2013219335A5/ja
Application granted granted Critical
Publication of JP6110693B2 publication Critical patent/JP6110693B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2013044631A 2012-03-14 2013-03-06 半導体装置 Expired - Fee Related JP6110693B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013044631A JP6110693B2 (ja) 2012-03-14 2013-03-06 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012057738 2012-03-14
JP2012057738 2012-03-14
JP2013044631A JP6110693B2 (ja) 2012-03-14 2013-03-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2013219335A JP2013219335A (ja) 2013-10-24
JP2013219335A5 JP2013219335A5 (enExample) 2016-04-14
JP6110693B2 true JP6110693B2 (ja) 2017-04-05

Family

ID=49156825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013044631A Expired - Fee Related JP6110693B2 (ja) 2012-03-14 2013-03-06 半導体装置

Country Status (2)

Country Link
US (1) US20130240872A1 (enExample)
JP (1) JP6110693B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6001308B2 (ja) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 半導体装置
US10529740B2 (en) * 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
JP6541398B2 (ja) 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
US9722090B2 (en) * 2014-06-23 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first gate oxide semiconductor film, and second gate
EP2960943B1 (en) * 2014-06-27 2019-08-07 LG Display Co., Ltd. Thin film transistor of display apparatus
US10580798B2 (en) 2016-01-15 2020-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN114792701B (zh) * 2021-01-24 2025-02-25 张葳葳 一种主动驱动无机发光二极管显示和照明器件及其制作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP3415602B2 (ja) * 2000-06-26 2003-06-09 鹿児島日本電気株式会社 パターン形成方法
JP4211250B2 (ja) * 2000-10-12 2009-01-21 セイコーエプソン株式会社 トランジスタ及びそれを備える表示装置
JP4604440B2 (ja) * 2002-02-22 2011-01-05 日本電気株式会社 チャネルエッチ型薄膜トランジスタ
JP2005084416A (ja) * 2003-09-09 2005-03-31 Sharp Corp アクティブマトリクス基板およびそれを用いた表示装置
TWI279916B (en) * 2005-01-31 2007-04-21 Au Optronics Corp TFT array substrate of a LCD, LCD panel and method of fabricating the same
KR101085451B1 (ko) * 2005-02-11 2011-11-21 삼성전자주식회사 표시장치용 박막트랜지스터 기판과 그 제조방법
KR101410926B1 (ko) * 2007-02-16 2014-06-24 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
EP2073255B1 (en) * 2007-12-21 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Diode and display device comprising the diode
JP5409024B2 (ja) * 2008-02-15 2014-02-05 株式会社半導体エネルギー研究所 表示装置
JP5587591B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
KR101671210B1 (ko) * 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
BR112012028690A2 (pt) * 2010-05-10 2018-05-15 Sharp Kk dispositivo semicondutor, substrato de matriz ativa, e dispositivo de exibição
JP5610855B2 (ja) * 2010-06-04 2014-10-22 京セラディスプレイ株式会社 液晶表示装置および液晶表示装置の製造方法

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Publication number Publication date
JP2013219335A (ja) 2013-10-24
US20130240872A1 (en) 2013-09-19

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