JP6106389B2 - Pre-installed semiconductor sealing film - Google Patents
Pre-installed semiconductor sealing film Download PDFInfo
- Publication number
- JP6106389B2 JP6106389B2 JP2012201146A JP2012201146A JP6106389B2 JP 6106389 B2 JP6106389 B2 JP 6106389B2 JP 2012201146 A JP2012201146 A JP 2012201146A JP 2012201146 A JP2012201146 A JP 2012201146A JP 6106389 B2 JP6106389 B2 JP 6106389B2
- Authority
- JP
- Japan
- Prior art keywords
- component
- semiconductor
- film
- parts
- sealing film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 133
- 238000007789 sealing Methods 0.000 title claims description 86
- 239000003795 chemical substances by application Substances 0.000 claims description 49
- 239000003822 epoxy resin Substances 0.000 claims description 35
- 229920000647 polyepoxide Polymers 0.000 claims description 35
- 239000007788 liquid Substances 0.000 claims description 31
- 238000009434 installation Methods 0.000 claims description 21
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 19
- 238000005538 encapsulation Methods 0.000 claims description 15
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 12
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 229920006287 phenoxy resin Polymers 0.000 claims description 9
- 239000013034 phenoxy resin Substances 0.000 claims description 9
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 8
- 229920005992 thermoplastic resin Polymers 0.000 claims description 5
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000011256 inorganic filler Substances 0.000 claims description 3
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 3
- 230000020169 heat generation Effects 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 238000001723 curing Methods 0.000 description 71
- 239000000758 substrate Substances 0.000 description 39
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 26
- 239000000047 product Substances 0.000 description 18
- 238000011156 evaluation Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- -1 etc. Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 239000011342 resin composition Substances 0.000 description 11
- 239000004594 Masterbatch (MB) Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 150000001412 amines Chemical class 0.000 description 8
- 239000011800 void material Substances 0.000 description 8
- 238000000113 differential scanning calorimetry Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 150000008065 acid anhydrides Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- 238000001879 gelation Methods 0.000 description 4
- 150000002989 phenols Chemical class 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 3
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 2
- QCBSYPYHCJMQGB-UHFFFAOYSA-N 2-ethyl-1,3,5-triazine Chemical compound CCC1=NC=NC=N1 QCBSYPYHCJMQGB-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- GOYGTBXFJBGGLI-UHFFFAOYSA-N 7a-but-1-enyl-3a-methyl-4,5-dihydro-2-benzofuran-1,3-dione Chemical compound C1=CCCC2(C)C(=O)OC(=O)C21C=CCC GOYGTBXFJBGGLI-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000012644 addition polymerization Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 125000004978 cyclooctylene group Chemical group 0.000 description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 229960004337 hydroquinone Drugs 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 125000005591 trimellitate group Chemical group 0.000 description 2
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- HCNHNBLSNVSJTJ-UHFFFAOYSA-N 1,1-Bis(4-hydroxyphenyl)ethane Chemical compound C=1C=C(O)C=CC=1C(C)C1=CC=C(O)C=C1 HCNHNBLSNVSJTJ-UHFFFAOYSA-N 0.000 description 1
- RUFZNDNBXKOZQV-UHFFFAOYSA-N 2,3-dihydro-1h-pyrrolo[1,2-a]benzimidazole Chemical compound C1=CC=C2N(CCC3)C3=NC2=C1 RUFZNDNBXKOZQV-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical group ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- XRCRJFOGPCJKPF-UHFFFAOYSA-N 2-butylbenzene-1,4-diol Chemical compound CCCCC1=CC(O)=CC=C1O XRCRJFOGPCJKPF-UHFFFAOYSA-N 0.000 description 1
- LLOXZCFOAUCDAE-UHFFFAOYSA-N 2-diphenylphosphorylbenzene-1,4-diol Chemical compound OC1=CC=C(O)C(P(=O)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 LLOXZCFOAUCDAE-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- WVRNUXJQQFPNMN-VAWYXSNFSA-N 3-[(e)-dodec-1-enyl]oxolane-2,5-dione Chemical compound CCCCCCCCCC\C=C\C1CC(=O)OC1=O WVRNUXJQQFPNMN-VAWYXSNFSA-N 0.000 description 1
- RDNPPYMJRALIIH-UHFFFAOYSA-N 3-methylcyclohex-3-ene-1,1,2,2-tetracarboxylic acid Chemical compound CC1=CCCC(C(O)=O)(C(O)=O)C1(C(O)=O)C(O)=O RDNPPYMJRALIIH-UHFFFAOYSA-N 0.000 description 1
- NUDSREQIJYWLRA-UHFFFAOYSA-N 4-[9-(4-hydroxy-3-methylphenyl)fluoren-9-yl]-2-methylphenol Chemical compound C1=C(O)C(C)=CC(C2(C3=CC=CC=C3C3=CC=CC=C32)C=2C=C(C)C(O)=CC=2)=C1 NUDSREQIJYWLRA-UHFFFAOYSA-N 0.000 description 1
- QXBYUPMEYVDXIQ-UHFFFAOYSA-N 4-methyl-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound CC1CCCC2C(=O)OC(=O)C12 QXBYUPMEYVDXIQ-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- FKBMTBAXDISZGN-UHFFFAOYSA-N 5-methyl-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1C(C)CCC2C(=O)OC(=O)C12 FKBMTBAXDISZGN-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- SDDLEVPIDBLVHC-UHFFFAOYSA-N Bisphenol Z Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)CCCCC1 SDDLEVPIDBLVHC-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- YJHYCWCDDATXRQ-UHFFFAOYSA-N C1(=CC=CC=C1)P(=O)(C1=CC=CC=C1)POC1=CC=CC2=CC=CC=C12 Chemical compound C1(=CC=CC=C1)P(=O)(C1=CC=CC=C1)POC1=CC=CC2=CC=CC=C12 YJHYCWCDDATXRQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 241000233805 Phoenix Species 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229920002732 Polyanhydride Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- VANNPISTIUFMLH-UHFFFAOYSA-N glutaric anhydride Chemical compound O=C1CCCC(=O)O1 VANNPISTIUFMLH-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- FLBJFXNAEMSXGL-UHFFFAOYSA-N het anhydride Chemical compound O=C1OC(=O)C2C1C1(Cl)C(Cl)=C(Cl)C2(Cl)C1(Cl)Cl FLBJFXNAEMSXGL-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005040 ion trap Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006146 polyetheresteramide block copolymer Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Description
本発明は、先設置型半導体封止用フィルムに関し、詳細には、フリップチップボンディングで使用される先設置型半導体封止用フィルムに関する。 The present invention relates to a pre-installed semiconductor sealing film, and more particularly to a pre-installed semiconductor sealing film used in flip chip bonding.
近年、半導体装置のさらなる配線等の高密度化、高周波化に対応可能な半導体チップの実装方式として、フリップチップボンディングが利用されている。一般的に、フリップチップボンディングでは、半導体チップと基板の間隙を、アンダーフィルと呼ばれる材料で封止する。 In recent years, flip chip bonding has been used as a semiconductor chip mounting method that can cope with higher density and higher frequency of wiring and the like of semiconductor devices. Generally, in flip chip bonding, a gap between a semiconductor chip and a substrate is sealed with a material called underfill.
従来、フリップチップボンディングでは、半導体チップと基板をはんだ付け等で接合した後、半導体チップと基板の間隙に、熱硬化性の液状封止樹脂組成物であるアンダーフィル剤を充填して半導体装置を製造する方法が行われていた。近年では、まず、アンダーフィル剤を基板に塗布し、半導体チップを載せた後、アンダーフィル剤の硬化と、半導体チップと基板の接続とを同時に行うことにより、工程の短縮および硬化時間の短縮を可能とし、その結果、低コストかつ低エネルギーで半導体装置を作製できる、先供給型フリップチップボンディングプロセスが注目され、このプロセス向けの液状封止材樹脂組成物（以下、先供給型液状封止樹脂組成物という）が検討されている。 Conventionally, in flip chip bonding, after bonding a semiconductor chip and a substrate by soldering or the like, a gap between the semiconductor chip and the substrate is filled with an underfill agent, which is a thermosetting liquid sealing resin composition, and a semiconductor device is manufactured. The manufacturing method was performed. In recent years, first, after applying an underfill agent to a substrate and mounting a semiconductor chip, the underfill agent is cured and the semiconductor chip and the substrate are connected at the same time, thereby shortening the process and shortening the curing time. As a result, a pre-supplied flip chip bonding process that can manufacture a semiconductor device at low cost and low energy has attracted attention. A liquid encapsulant resin composition for this process (hereinafter referred to as a pre-supplied liquid encapsulating resin) Called composition).
しかしながら、先供給型液状封止樹脂組成物を用いたフリップチップボンディングプロセスでは、半導体チップ上面へのブリードが問題となっている。図１に、先供給型液状封止樹脂組成物を用いたフリップチップボンディングプロセスでのブリード現象を説明するための断面の模式図を示す。図１は、配線２２を形成した基板２１上に、先供給型液状封止樹脂組成物２０を塗布した後、バンプ２３を形成した半導体チップ２４を載せた図である。このとき、先供給型液状封止樹脂組成物２０の供給量が多くなってしまうと、半導体チップ２４の側面に先供給型液状封止樹脂組成物２０がはい上がるブリード２０Ｂが発生し、さらには半導体チップ２４の上面にまで先供給型液状封止樹脂組成物２０がはい上がるブリード２０Ｃが発生する、という問題がある。 However, in the flip chip bonding process using the pre-supplied liquid sealing resin composition, bleeding on the upper surface of the semiconductor chip is a problem. FIG. 1 is a schematic cross-sectional view for explaining a bleed phenomenon in a flip chip bonding process using a pre-supplied liquid sealing resin composition. FIG. 1 is a diagram in which a semiconductor chip 24 on which bumps 23 are formed is placed on a substrate 21 on which wirings 22 are formed after applying a pre-feed type liquid sealing resin composition 20. At this time, if the supply amount of the pre-feed type liquid sealing resin composition 20 is increased, a bleed 20B is generated on the side surface of the semiconductor chip 24, and the pre-feed type liquid sealing resin composition 20 rises. There is a problem that a bleed 20 </ b> C in which the pre-feed type liquid sealing resin composition 20 rises up to the upper surface of the semiconductor chip 24 is generated.
この問題を解決するために、先供給型液状封止樹脂組成物の替わりに、先設置型半導体封止用フィルムの使用する実装方法（以下、先設置型フリップチップ実装という）が検討されている。先設置型フリップチップ実装では、先設置型半導体封止用フィルムの厚さと面積により、先設置型半導体封止用フィルムの供給量を制御することができるため、先設置型半導体封止用フィルムの供給量の制御が容易になるためである。この先設置型半導体封止用フィルムには、一般的な封止材としての特性に加えて、可撓性や、フリップチップ実装のための、例えば６０〜８０℃での、プレヒート時に硬化しないことが要求される。なお、先供給型と同様に、先設置型フリップチップ実装も、低コストかつ低エネルギーでフリップチップ実装された半導体装置を作製することができる。 In order to solve this problem, a mounting method using a pre-installed semiconductor sealing film (hereinafter referred to as pre-installed flip chip mounting) is being considered instead of the pre-supplied liquid sealing resin composition. . In the pre-installation type flip chip mounting, the supply amount of the pre-installation type semiconductor encapsulation film can be controlled by the thickness and area of the pre-installation type semiconductor encapsulation film. This is because the supply amount can be easily controlled. In addition to the properties as a general sealing material, this pre-installed semiconductor sealing film may be flexible and not harden during preheating at, for example, 60 to 80 ° C. for flip chip mounting. Required. As in the case of the pre-feed type, the pre-installed flip chip mounting can produce a semiconductor device that is flip-chip mounted at low cost and low energy.
先設置型半導体封止用フィルムの成分としては、一般的な封止材としての要求を満たすためにエポキシ樹脂を用い、さらに、フィルムとした後に硬化させるために潜在性硬化剤を使用することが考えられる。潜在性硬化剤を使用したエポキシ樹脂組成物としては、（ａ）エポキシ樹脂、（ｂ）エポキシ樹脂に溶解可能な熱可塑性樹脂、（ｃ）７０〜９０℃で活性化する加熱硬化型の潜在性硬化剤から成るエポキシ樹脂組成物が開示されている（特許文献１）。しかしながら、このエポキシ樹脂組成物は、潜在性硬化剤が、７０〜９０℃で活性化するため、エポキシ樹脂組成物が硬化してしまい、先設置型半導体封止用フィルムとしては使用することができない。 As a component of the pre-installed semiconductor sealing film, an epoxy resin is used to satisfy the requirements as a general sealing material, and a latent curing agent may be used to cure after forming a film. Conceivable. The epoxy resin composition using a latent curing agent includes (a) an epoxy resin, (b) a thermoplastic resin that can be dissolved in the epoxy resin, and (c) a latent heat curing type that is activated at 70 to 90 ° C. An epoxy resin composition comprising a curing agent is disclosed (Patent Document 1). However, in this epoxy resin composition, since the latent curing agent is activated at 70 to 90 ° C., the epoxy resin composition is cured and cannot be used as a pre-installed semiconductor sealing film. .
一方、潜在性硬化剤としては、アミン系硬化剤（Ａ）を含むコアと、及び該コアを被覆するカプセル膜を含み、該カプセル膜が、アミン系硬化剤（Ａ）を硬化剤とするエポキシ樹脂の硬化物を含む、カプセル型硬化剤が開示されている（特許文献２）。しかしながら、このカプセル型硬化剤は、低温又は短時間の硬化条件であっても、高い接続信頼性、接着強度、及び高い封止性が得られることを目的とする（特許文献２の「発明の開示」の第２〜５行）ため、フリップチップ実装のためのプレヒート時に硬化してしまい、そのままでは、先設置型半導体封止用フィルムの潜在性硬化剤として使用することができない。 On the other hand, the latent curing agent includes an amine-based curing agent (A) -containing core, and a capsule film covering the core, and the capsule film has an amine-based curing agent (A) as a curing agent. A capsule-type curing agent containing a cured product of a resin is disclosed (Patent Document 2). However, this capsule-type curing agent is intended to obtain high connection reliability, adhesive strength, and high sealing performance even under low temperature or short-time curing conditions (see “Invention of Patent Document 2”). Therefore, it cannot be used as a latent curing agent for a pre-installed semiconductor sealing film as it is.
本発明は、フリップチップ実装のためのプレヒート時には硬化しないが、フリップチップ実装時には硬化するため、先設置型フリップチップ実装で使用可能な先設置型半導体封止用フィルムを提供することを課題とする。 SUMMARY OF THE INVENTION An object of the present invention is to provide a pre-installed semiconductor sealing film that can be used in pre-installation type flip chip mounting because it does not harden during pre-heating for flip chip mounting but cures during flip chip mounting. .
本発明は、以下の構成を有することによって上記問題を解決した先設置型半導体封止用フィルムに関する。
〔１〕（Ａ）液状エポキシ樹脂、（Ｂ）熱可塑性樹脂、（Ｃ）硬化剤、（Ｄ）５０〜１００℃で加熱処理した潜在性硬化促進剤、および（Ｅ）無機フィラーを含むことを特徴とする、先設置型半導体封止用フィルム。
〔２〕（Ｂ）成分が、先設置型半導体封止用フィルム：１００質量部に対して、１０〜３０質量部である、上記〔１〕記載の先設置型半導体封止用フィルム。
〔３〕（Ｂ）成分が、（Ａ）成分と（Ｂ）成分の合計：１００質量部に対して、１５〜６５質量部である、上記〔１〕または〔２〕記載の先設置型半導体封止用フィルム。
〔４〕（Ｄ）成分が、先設置型半導体封止用フィルム：１００質量部に対して、２〜５質量部である、上記〔１〕〜〔３〕のいずれか記載の先設置型半導体封止用フィルム。
〔５〕（Ｅ）成分が、先設置型半導体封止用フィルム：１００質量部に対して、４０〜７０質量部である、上記〔１〕〜〔４〕のいずれか記載の先設置型半導体封止用フィルム。
〔６〕上記〔１〕〜〔５〕のいずれか記載の先設置型半導体封止用フィルムを用いて製造された半導体装置。
The present invention relates to a pre-installed semiconductor sealing film that has solved the above problems by having the following configuration.
[1] It contains (A) a liquid epoxy resin, (B) a thermoplastic resin, (C) a curing agent, (D) a latent curing accelerator heat-treated at 50 to 100 ° C., and (E) an inorganic filler. A pre-installed film for semiconductor encapsulation, which is characterized.
[2] The pre-installed semiconductor sealing film according to [1], wherein the component (B) is 10 to 30 parts by mass with respect to 100 parts by mass of the pre-installed semiconductor sealing film.
[3] The preinstalled semiconductor according to [1] or [2], wherein the component (B) is 15 to 65 parts by mass with respect to 100 parts by mass of the total of the components (A) and (B). Film for sealing.
[4] The preinstalled semiconductor according to any one of [1] to [3], wherein the component (D) is 2 to 5 parts by mass with respect to 100 parts by mass of the preinstalled semiconductor sealing film. Film for sealing.
[5] The preinstalled semiconductor according to any one of [1] to [4], wherein the component (E) is 40 to 70 parts by mass with respect to 100 parts by mass of the preinstalled semiconductor sealing film. Film for sealing.
[6] A semiconductor device manufactured using the pre-installed semiconductor sealing film according to any one of [1] to [5].
本発明〔１〕によれば、フリップチップ実装のためのプレヒート時には硬化しないが、フリップチップ実装時には硬化するため、先設置型フリップチップ実装で使用可能な先設置型半導体封止用フィルムを提供することができる。 According to the present invention [1], there is provided a pre-installed semiconductor sealing film that is not cured during preheating for flip chip mounting but is cured during flip chip mounting. be able to.
本発明〔６〕によれば、低コストで、低エネルギーの先設置型フリップチップ実装で製造できる半導体装置を得ることができる。 According to the present invention [6], it is possible to obtain a semiconductor device that can be manufactured by low-cost, low-energy pre-installed flip chip mounting at low cost.
本発明の先設置型半導体封止用フィルム（以下、半導体封止用フィルムという）は、（Ａ）液状エポキシ樹脂、（Ｂ）熱可塑性樹脂、（Ｃ）硬化剤、（Ｄ）５０〜１００℃で加熱処理した潜在性硬化促進剤、および（Ｅ）無機フィラーを含むことを特徴とする。 The pre-installed semiconductor sealing film of the present invention (hereinafter referred to as a semiconductor sealing film) includes (A) a liquid epoxy resin, (B) a thermoplastic resin, (C) a curing agent, and (D) 50 to 100 ° C. And a latent curing accelerator heat-treated with (E) and an inorganic filler.
（Ａ）成分は、半導体封止用フィルムに、硬化性、耐熱性、接着性を付与し、硬化後の半導体封止用フィルムに、耐久性を付与する。（Ａ）成分としては、液状ビスフェノールＡ型エポキシ樹脂、液状ビスフェノールＦ型エポキシ樹脂、液状ナフタレン型エポキシ樹脂、液状アミノフェノール型エポキシ樹脂、液状ビフェニル型エポキシ樹脂、液状水添ビスフェノール型エポキシ樹脂、液状脂環式エポキシ樹脂、液状アルコールエーテル型エポキシ樹脂、液状環状脂肪族型エポキシ樹脂、液状フルオレン型エポキシ樹脂等が挙げられ、液状ナフタレン型エポキシ樹脂、液状ビスフェノールＦ型エポキシ樹脂、液状ビスフェノールＡ型エポキシ樹脂、液状アミノフェノール型エポキシ樹脂、および液状ビフェニル型エポキシ樹脂が、硬化性、耐熱性、接着性、耐久性の観点から好ましい。また、（Ａ）成分のエポキシ当量は、反応性、硬化密度の観点から、８０〜２５０ｇ／ｅｑが好ましい。市販品としては、新日鐵化学製ビスフェノールＡ型エポキシ樹脂（品名：ＹＤ−１２８）、新日鐵化学製ビスフェノールＦ型エポキシ樹脂（品名：ＹＤＦ８７０ＧＳ）、三菱化学製アミノフェノール型エポキシ樹脂（グレード：ＪＥＲ６３０、ＪＥＲ６３０ＬＳＤ）、ＤＩＣ製ナフタレン型エポキシ樹脂（品名：ＨＰ４０３２Ｄ）、モメンティブ・パフォーマンス・マテリアルズ・ジャパン製（品名：ＴＳＬ９９０６）等が挙げられる。（Ａ）成分は、単独でも２種以上を併用してもよい。 (A) A component provides sclerosis | hardenability, heat resistance, and adhesiveness to the film for semiconductor sealing, and provides durability to the film for semiconductor sealing after hardening. As component (A), liquid bisphenol A type epoxy resin, liquid bisphenol F type epoxy resin, liquid naphthalene type epoxy resin, liquid aminophenol type epoxy resin, liquid biphenyl type epoxy resin, liquid hydrogenated bisphenol type epoxy resin, liquid fat Cyclic epoxy resin, liquid alcohol ether type epoxy resin, liquid cyclic aliphatic type epoxy resin, liquid fluorene type epoxy resin, etc., liquid naphthalene type epoxy resin, liquid bisphenol F type epoxy resin, liquid bisphenol A type epoxy resin, A liquid aminophenol type epoxy resin and a liquid biphenyl type epoxy resin are preferred from the viewpoints of curability, heat resistance, adhesiveness, and durability. The epoxy equivalent of the component (A) is preferably 80 to 250 g / eq from the viewpoints of reactivity and curing density. Commercially available products include Nippon Steel Chemical's bisphenol A type epoxy resin (product name: YD-128), Nippon Steel Chemical's bisphenol F type epoxy resin (product name: YDF870GS), Mitsubishi Chemical's aminophenol type epoxy resin (grade: JER630, JER630LSD), DIC naphthalene type epoxy resin (product name: HP4032D), Momentive Performance Materials Japan (product name: TSL9906), and the like. (A) A component may be individual or may use 2 or more types together.
（Ｂ）成分は、半導体封止用フィルムに、可撓性を付与する。（Ｂ）成分としては、フェノキシ樹脂、ポリイミド樹脂、ポリエチレン樹脂、ポリスチレン樹脂、ポリエステル、ポリエーテル、ポリアミド、ポリエーテルエステルアミドが挙げられ、硬化後の半導体封止用フィルムの内部応力の緩和の観点から、フェノキシ樹脂が好ましい。ここで、フェノキシ樹脂は、二価フェノールとエピクロルヒドリンの直接反応による方法、または二価フェノールのジグリシジルエーテルと二価フェノールの付加重合反応により合成される高分子ポリヒドロキシポリエーテル（熱可塑性樹脂）であり、重量平均分子量が１０，０００以上の高分子をいう。重量平均分子量は、１０，０００〜１００，０００が好ましく、４０，０００〜８０，０００がより好ましい。ここで、重量平均分子量は、ゲルパーミエーションクロマトグラフィー法（ＧＰＣ）により、標準ポリスチレンによる検量線を用いた値とする。 The component (B) imparts flexibility to the semiconductor sealing film. Examples of the component (B) include phenoxy resins, polyimide resins, polyethylene resins, polystyrene resins, polyesters, polyethers, polyamides, and polyether ester amides. From the viewpoint of alleviating internal stress of the cured semiconductor sealing film. A phenoxy resin is preferred. Here, the phenoxy resin is a polymer polyhydroxy polyether (thermoplastic resin) synthesized by a direct reaction of a dihydric phenol and epichlorohydrin or an addition polymerization reaction of a diglycidyl ether of a dihydric phenol and a dihydric phenol. Yes, a polymer having a weight average molecular weight of 10,000 or more. The weight average molecular weight is preferably 10,000 to 100,000, more preferably 40,000 to 80,000. Here, the weight average molecular weight is a value obtained by gel permeation chromatography (GPC) using a standard polystyrene calibration curve.
二価フェノール類としては、ビスフェノールＡ、ビスフェノールＦ、ビスフェノールＳ、ジヒドロキシナフタレン、ビスフェノールＤ、ビスフェノールＥ、ビスフェノールＺ、ビスフェノールフルオレン、ビスクレゾールフルオレン、ビフェノール、カテコール、レゾルシン、ハイドロキノン、２，５−ジ−ｔ−ブチルハイドロキノン、もしくはブロム化ビスフェノールＡ等のハロゲン化ビスフェノール類、１０−（２，５−ジヒドロキシフェニル）−１０−ジヒドロ−９−オキサ−１０−ホスファフェナントレン−１０−オキサイド、１０−（２，７−ジヒドロキシナフチル）−１０−ジヒドロ−９−オキサ−１０−ホスファフェナントレン−１０−オキサイド、ジフェニルホスフィニルハイドロキノン、ジフェニルホスフィニルナフトキノン、シクロオクチレンホスフィニル−１，４−ベンゼンジオール、もしくはシクロオクチレンホスフィニル−１，４−ナフタレンジオール等のホスフィン含有フェノール類等が挙げられ、フェノキシ樹脂としては、これらの二価フェノール類とエピクロルヒドリンの直接反応によって製造されたもの、または上記二価フェノール類とそれらのジグリシジルエーテル化合物の付加重合反応によって合成されたもの等が挙げられる。（Ｂ）成分としては、ビスフェノールＡ型フェノキシ樹脂、ビスフェノールＦ型フェノキシ樹脂、ビスフェノールＡ−ビスフェノールＦ共重合型フェノキシ樹脂等が、より好ましい。（Ｂ）成分がフェノキシ樹脂であると、硬化後の先設置型半導体封止用フィルムの内部応力を緩和するため、半導体チップ−基板間の応力が緩和され、また、半導体チップ−基板間に（Ｂ）成分が存在することで密着性が向上する、と考えられる。（Ｂ）成分の市販品としては、新日鐵化学製フェノキシ樹脂（品名：ＹＰ−５０Ｓ）等が挙げられる。（Ｂ）成分は、単独でも２種以上を併用してもよい。 Dihydric phenols include bisphenol A, bisphenol F, bisphenol S, dihydroxynaphthalene, bisphenol D, bisphenol E, bisphenol Z, bisphenol fluorene, biscresol fluorene, biphenol, catechol, resorcin, hydroquinone, 2,5-di-t. -Halogenated bisphenols such as butyl hydroquinone or brominated bisphenol A, 10- (2,5-dihydroxyphenyl) -10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, 10- (2, 7-dihydroxynaphthyl) -10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, diphenylphosphinylhydroquinone, diphenylphosphinylnaphthoxy Phosphine-containing phenols such as cyclooctylene phosphinyl-1,4-benzenediol or cyclooctylene phosphinyl-1,4-naphthalenediol, and the like. Examples include those produced by direct reaction of phenols and epichlorohydrin, or those synthesized by addition polymerization reaction of the above dihydric phenols and their diglycidyl ether compounds. As the component (B), bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, bisphenol A-bisphenol F copolymer type phenoxy resin, and the like are more preferable. When the component (B) is a phenoxy resin, the stress between the semiconductor chip and the substrate is relieved to relieve the internal stress of the pre-installed semiconductor sealing film after curing, and between the semiconductor chip and the substrate ( It is considered that the adhesion is improved by the presence of the component B). (B) As a commercial item of a component, Nippon Steel Chemical phenoxy resin (product name: YP-50S) etc. are mentioned. (B) A component may be individual or may use 2 or more types together.
（Ｃ）成分は、（Ａ）成分の硬化能を有するものであればよく、（Ｃ）成分としては、フェノール系硬化剤、アミン系硬化剤、酸無水物系硬化剤が挙げられ、反応性、安定性の観点から、フェノール系硬化剤が好ましい。フェノール系硬化剤としては、フェノールノボラック、クレゾールノボラック等が挙げられ、フェノールノボラックが好ましい。アミン系硬化剤としては、鎖状脂肪族アミン、環状脂肪族アミン、脂肪芳香族アミン、芳香族アミン等が挙げられ、芳香族アミンが好ましい。酸無水物系硬化剤としては、テトラヒドロ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、メチルナジック酸無水物、水素化メチルナジック酸無水物、トリアルキルテトラヒドロ無水フタル酸、メチルシクロヘキセンテトラカルボン酸二無水物、無水フタル酸、無水トリメリット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸二無水物、エチレングリコールビスアンヒドロトリメリテート、グリセリンビス（アンヒドロトリメリテート）モノアセテート、ドデセニル無水コハク酸、脂肪族二塩基酸ポリ無水物、クロレンド酸無水物、メチルブテニルテトラヒドロフタル酸無水物、アルキル化テトラヒドロフタル酸無水物、メチルハイミック酸無水物、アルケニル基で置換されたコハク酸無水物、グルタル酸無水物等が挙げられ、メチルブテニルテトラヒドロフタル酸無水物が好ましい。市販品としては、ＤＩＣ製フェノール樹脂硬化剤（品名：ＫＡ−１１６０）、明和化成製フェノール硬化剤（品名：ＭＥＨ８０００、ＭＥＨ８００５）、日本化薬製アミン硬化剤（品名：カヤハードＡ−Ａ）、三菱化学製酸無水物（グレード：ＹＨ３０６、ＹＨ３０７）、日立化成工業製３ ｏｒ ４−メチル−ヘキサヒドロ無水フタル酸（品名：ＨＮ−５５００）等が挙げられる。（Ｃ）成分は、単独でも２種以上を併用してもよい。 The component (C) only needs to have the curing ability of the component (A). Examples of the component (C) include phenolic curing agents, amine-based curing agents, and acid anhydride-based curing agents, and are reactive. From the viewpoint of stability, a phenolic curing agent is preferred. Examples of the phenolic curing agent include phenol novolak and cresol novolak, and phenol novolak is preferable. Examples of amine-based curing agents include chain aliphatic amines, cycloaliphatic amines, aliphatic aromatic amines, aromatic amines, and the like, and aromatic amines are preferred. Examples of acid anhydride curing agents include tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic acid anhydride, hydrogenated methylnadic acid anhydride, and trialkyltetrahydroanhydride. Phthalic acid, methylcyclohexene tetracarboxylic dianhydride, phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic dianhydride, ethylene glycol bisanhydro trimellitate, glycerin bis (anhydro trimelli Tate) Monoacetate, dodecenyl succinic anhydride, aliphatic dibasic acid polyanhydride, chlorendic anhydride, methylbutenyl tetrahydrophthalic anhydride, alkylated tetrahydrophthalic anhydride, methyl hymic anhydride, alkenyl In succinic anhydride substituted, glutaric anhydride and the like, methyl butenyl tetrahydrophthalic acid anhydride are preferred. Commercially available products include DIC phenol resin curing agents (product name: KA-1160), Meiwa Kasei phenol curing agents (product names: MEH8000, MEH8005), Nippon Kayaku amine curing agents (product name: Kayahard A-A), Mitsubishi. Examples thereof include chemical acid anhydrides (grade: YH306, YH307), 3 or 4-methyl-hexahydrophthalic anhydride (product name: HN-5500) manufactured by Hitachi Chemical. (C) A component may be individual or may use 2 or more types together.
（Ｄ）成分により、フリップチップ実装のためのプレヒート時には半導体封止用フィルムを硬化させないが、フリップチップ実装時には半導体封止用フィルムを硬化させることが可能となる。ここで、潜在性硬化促進剤は、ウレタン樹脂などをシェルに、硬化促進剤をコアにして、マイクロカプセル化されたものであり、エポキシ樹脂とマスターバッチ化されたものが、作業性、硬化速度、保存安定性の観点から、好ましい。エポキシ樹脂とマスターバッチ化された潜在性硬化促進剤を５０〜１００℃で加熱処理することにより、シェルのウレタン樹脂が適度に重合する、と考えられる。潜在性硬化促進剤の加熱処理温度が５０℃未満では、プレヒート時での安定性、フリップチップ実装の接続性が十分ではなくなり、潜在性硬化促進剤の加熱処理温度が１００℃を超えると、エポキシ樹脂と潜在性硬化促進剤とのマスターバッチが、半硬化または硬化してしまう。（Ｄ）成分の加熱処理温度は、６０〜１００℃であると好ましく、７０〜１００℃であると、より好ましく、７０〜９０℃であると、さらに好ましい。 The component (D) does not cure the semiconductor sealing film during preheating for flip chip mounting, but allows the semiconductor sealing film to be cured during flip chip mounting. Here, the latent curing accelerator is microencapsulated with urethane resin as the shell and curing accelerator as the core, and the epoxy resin and masterbatch are the workability and curing speed. From the viewpoint of storage stability, it is preferable. It is considered that the urethane resin in the shell is appropriately polymerized by heat-treating the epoxy resin and the masterbatch latent curing accelerator at 50 to 100 ° C. If the heat treatment temperature of the latent curing accelerator is less than 50 ° C., the stability during preheating and the connectivity of flip chip mounting are not sufficient, and if the heat treatment temperature of the latent curing accelerator exceeds 100 ° C., epoxy The master batch of the resin and the latent curing accelerator is semi-cured or cured. (D) The heat processing temperature of a component is preferable in it being 60-100 degreeC, it is more preferable in it being 70-100 degreeC, and it is further more preferable in it being 70-90 degreeC.
（Ｄ）成分の加熱処理時間は、６〜７２時間であると好ましい。なお、（Ｄ）成分の加熱処理温度が５０℃の場合には、４８時間以上であると好ましく、（Ｄ）成分の加熱処理温度が１００℃の場合には、４８時間以下であると好ましく、１２時間以下であると、より好ましい。 (D) It is preferable that the heat processing time of a component is 6 to 72 hours. In addition, when the heat processing temperature of (D) component is 50 degreeC, it is preferable that it is 48 hours or more, and when the heat processing temperature of (D) component is 100 degreeC, it is preferable that it is 48 hours or less, It is more preferable that it is 12 hours or less.
また、（Ｄ）成分は、反応開始温度が、１１０〜１５０℃であると好ましく、１２０〜１４２℃であると、より好ましい。ここで、反応開始温度は、ＤＳＣ（示差走査熱量測定）で測定する。ここで、反応開始温度は、（Ｄ）成分が半導体封止用フィルム中で、潜在性硬化剤が硬化反応を開始させる温度をいい、ＤＳＣでは、（Ｄ）成分の発熱が開始する温度として観察される。 Moreover, (D) component has preferable reaction start temperature in 110-150 degreeC, and it is more preferable in it being 120-142 degreeC. Here, the reaction start temperature is measured by DSC (differential scanning calorimetry). Here, the reaction start temperature is a temperature at which the latent curing agent starts a curing reaction in the film for semiconductor encapsulation (D), and is observed as a temperature at which the exotherm of the (D) component starts in DSC. Is done.
潜在性硬化促進剤としては、ウレタン樹脂などでマイクロカプセル化されたイミダゾール化合物硬化促進剤が、保存安定性の観点から好ましく、液状ビスフェノールＡ型等の液状エポキシ樹脂中に分散され、マスターバッチ化された、マイクロカプセル化イミダゾール化合物硬化促進剤が、作業性、硬化速度、保存安定性の点からより好ましい。イミダゾール硬化剤としては、２−メチルイミダゾール、２−ウンデシルイミダゾール、２−ヘプタデシルイミダゾール、２−エチル−４−メチルイミダゾール、２−フェニルイミダゾール、２−フェニル−４−メチルイミダゾール、２，４−ジアミノ−６−〔２’−メチルイミダゾリル−（１’）］エチル−ｓ−トリアジン、２−フェニル−４，５−ジヒドロキシメチルイミダゾール、２−フェニル−４−メチル−５−ヒドロキシメチルイミダゾール、２，３−ジヒドロ−１Ｈ−ピロロ［１，２−ａ］ベンズイミダゾール等を挙げることができ、２，４−ジアミノ−６−〔２’−メチルイミダゾリル−（１’）］エチル−ｓ−トリアジン、２，４−ジアミノ−６−［２’−ウンデシルイミダゾリル−（１）−エチル−ｓ−トリアジン、２，４−ジアミノ−６−［２’−エチル−４’−メチルイミダゾリル−（１’）］−エチル−ｓ−トリアジン等が、硬化速度、作業性、耐湿性の観点から好ましい。 As the latent curing accelerator, an imidazole compound curing accelerator microencapsulated with a urethane resin or the like is preferable from the viewpoint of storage stability, and is dispersed in a liquid epoxy resin such as liquid bisphenol A to be masterbatched. Further, a microencapsulated imidazole compound curing accelerator is more preferable from the viewpoints of workability, curing speed, and storage stability. Examples of imidazole curing agents include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2,4- Diamino-6- [2'-methylimidazolyl- (1 ')] ethyl-s-triazine, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2, 3-dihydro-1H-pyrrolo [1,2-a] benzimidazole can be mentioned, and 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)] ethyl-s-triazine, 2 , 4-Diamino-6- [2'-undecylimidazolyl- (1) -ethyl-s-triazine, 2, - diamino-6- [2'-ethyl-4'-methylimidazolyl- - (1 ')] - ethyl -s- triazine, and curing rate, workability, preferable from the viewpoint of moisture resistance.
エポキシ樹脂とマスターバッチ化された潜在性硬化促進剤の市販品としては、旭化成イーマテリアルズ製マイクロカプセル化イミダゾール化合物硬化剤（品名：ノバキュア４９８２（極厚型）、ノバキュア３９３２（中厚型）、ノバキュア４９２１（薄型）、ＨＸ３７２２、ＨＸＡ３９３２ＨＰ）等が挙げられ、旭化成イーマテリアルズ製マイクロカプセル化イミダゾール化合物硬化剤（品名：ノバキュア４９８２（極厚型））が好ましい。ここで、極厚型は、ゲル化温度が１４０〜１５０℃の潜在性硬化促進剤であり、中厚型は、ゲル化温度が１００〜１１０℃の潜在性硬化促進剤であり、薄型は、ゲル化温度が７０〜８０℃の潜在性硬化促進剤である。ゲル化温度は、ＪＩＳ Ｋ５６００―９−１に準拠してゲルタイム５分未満の温度を測定する。（Ｄ）成分は、単独でも２種以上を併用してもよい。 As a commercial product of the epoxy resin and the masterbatch latent latent accelerator, a microencapsulated imidazole compound curing agent manufactured by Asahi Kasei E-materials (product name: NovaCure 4982 (very thick type), NovaCure 3932 (medium thickness type), NovaCure 4921 (thin type), HX3722, HXA3932HP), and the like, and a microencapsulated imidazole compound curing agent (product name: NovaCure 4982 (extra-thick type)) manufactured by Asahi Kasei E-Materials is preferred. Here, the very thick type is a latent curing accelerator having a gelation temperature of 140 to 150 ° C., the middle thickness type is a latent curing accelerator having a gelation temperature of 100 to 110 ° C., and the thin type is It is a latent curing accelerator having a gelation temperature of 70 to 80 ° C. The gelation temperature is measured at a gel time of less than 5 minutes according to JIS K5600-9-1. (D) A component may be individual or may use 2 or more types together.
（Ｅ）成分により、硬化後の半導体封止用フィルムの弾性率および熱膨張係数を、調整する。（Ｅ）成分としては、コロイダルシリカ、疎水性シリカ、微細シリカ、ナノシリカ等のシリカフィラー、窒化アルミニウム、アルミナ、窒化ケイ素、窒化ホウ素が挙げられ、汎用性、電気特性などの観点からシリカフィラーが好ましい。また、（Ｅ）成分の平均粒径（粒状でない場合は、その平均最大径）は、特に限定されないが、０．０５〜５０μｍであることが、半導体封止用フィルム中にフィラーを均一に分散させるうえで好ましい。０．０５μｍ未満だと、実装時に半導体封止用フィルムの粘度が上昇して、流動性が悪化するおそれがある。５０μｍ超だと、半導体封止用フィルム中にフィラーを均一に存在させることが困難になり、かつ半導体と基板の接続が困難になるおそれがある。（Ｅ）成分の平均粒径は、０．１〜３０μｍであることがより好ましく、０．１〜５μｍであることがさらに好ましい。市販品としては、アドマテックス製シリカ（製品名：ＳＯ−Ｅ２、平均粒径：０．５μｍ）、ＤＥＮＫＡ製シリカ（品名：ＦＢ−５Ｄ、平均粒径：５μｍ）、扶桑化学工業製（製品名：ＳＰ０３Ｂ、平均粒径：３００ｎｍ）等が挙げられる。ここで、（Ｅ）成分の平均粒径は、動的光散乱式ナノトラック粒度分析計により測定する。（Ｅ）成分は、単独でも２種以上を併用してもよい。 (E) The elasticity modulus and thermal expansion coefficient of the film for semiconductor sealing after hardening are adjusted with a component. Examples of the component (E) include silica fillers such as colloidal silica, hydrophobic silica, fine silica, and nano silica, aluminum nitride, alumina, silicon nitride, and boron nitride. Silica filler is preferable from the viewpoint of versatility and electrical characteristics. . Moreover, the average particle diameter of the component (E) (if it is not granular, the average maximum diameter) is not particularly limited, but is 0.05 to 50 μm, and the filler is uniformly dispersed in the film for semiconductor encapsulation It is preferable to make it. When the thickness is less than 0.05 μm, the viscosity of the semiconductor sealing film increases during mounting, and the fluidity may be deteriorated. If it exceeds 50 μm, it may be difficult to make the filler uniformly present in the semiconductor sealing film, and the connection between the semiconductor and the substrate may be difficult. (E) As for the average particle diameter of a component, it is more preferable that it is 0.1-30 micrometers, and it is further more preferable that it is 0.1-5 micrometers. Commercially available products include silica manufactured by Admatex (product name: SO-E2, average particle size: 0.5 μm), silica made by DENKA (product name: FB-5D, average particle size: 5 μm), manufactured by Fuso Chemical Industries (product name) : SP03B, average particle diameter: 300 nm) and the like. Here, the average particle diameter of the component (E) is measured by a dynamic light scattering nanotrack particle size analyzer. (E) A component may be individual or may use 2 or more types together.
半導体封止用フィルムは、（Ｂ）成分を、半導体封止用フィルム：１００質量部に対して、７〜３０質量部含むと好ましく、１０〜３０質量部含むと、より好ましい。７質量部以上であれば、半導体封止用フィルムの可撓性が十分になり、３０質量部以下であると、半導体封止用フィルムに十分に可撓性があるからである。３０重量部以上であると、半導体封止フィルムが脆くなり易く、可撓性があるフィルム状を保つことが困難になり易い。 The film for semiconductor encapsulation preferably contains the component (B) in an amount of 7 to 30 parts by mass, more preferably 10 to 30 parts by mass with respect to 100 parts by mass of the semiconductor encapsulation film. This is because if the amount is 7 parts by mass or more, the semiconductor sealing film has sufficient flexibility, and if it is 30 parts by mass or less, the semiconductor sealing film has sufficient flexibility. If it is 30 parts by weight or more, the semiconductor sealing film tends to be brittle and it is difficult to maintain a flexible film shape.
また、半導体封止用フィルムは、（Ｂ）成分が、（Ａ）成分と（Ｂ）成分の合計：１００質量部に対して、１５〜６５質量部であると好ましく、１５〜５５質量部であると、より好ましい。１５質量部以上であれば、半導体封止用フィルムの可撓性が十分になり、６５質量部以下であると、半導体封止用フィルムに十分に可撓性があるからである。 Moreover, as for the film for semiconductor sealing, as for (B) component, it is preferable in it being 15-65 mass parts with respect to the sum total: 100 mass parts of (A) component and (B) component. More preferably. This is because if the amount is 15 parts by mass or more, the flexibility of the semiconductor sealing film is sufficient, and if it is 65 parts by mass or less, the semiconductor sealing film is sufficiently flexible.
（Ｃ）成分の硬化剤当量は、（Ａ）成分のエポキシ当量の０．１〜１．１倍であると好ましく、０．１倍未満では、（Ａ）成分との硬化が十分では無くなり易く、接着が不十分になり易い。一方、（Ｃ）成分の硬化剤当量が１．１倍を超えると、（Ａ）成分との硬化が不十分になり易く、ボイド発生が起き易くなってしまう。また、（Ｃ）成分の硬化剤当量は、（Ｂ）成分の官能基当量の０．１〜０．５倍である、と好ましく、０．１倍未満では、硬化が不十分になり易く、０．５倍を超えると硬化後、硬く脆くなり易くなってしまう。以上から、（Ｃ）成分の硬化剤当量は、（Ａ）成分のエポキシ当量と（Ｂ）成分の官能基当量の合計に対して、０．２〜１．６倍であると、好ましい。ここで、（Ｃ）成分の硬化剤当量は、例えば、（Ｃ）成分がフェノール系硬化剤のときにはフェノール当量、アミン系硬化剤のときにはアミン当量、酸無水物系硬化剤のときには酸無水当量である。 The curing agent equivalent of the component (C) is preferably 0.1 to 1.1 times the epoxy equivalent of the component (A), and if it is less than 0.1 times, the curing with the component (A) tends to be insufficient. Adhesion tends to be insufficient. On the other hand, when the curing agent equivalent of the component (C) exceeds 1.1 times, curing with the component (A) tends to be insufficient, and voids are likely to occur. Further, the curing agent equivalent of the component (C) is preferably 0.1 to 0.5 times the functional group equivalent of the component (B), and if it is less than 0.1 times, curing tends to be insufficient. If it exceeds 0.5 times, it tends to be hard and brittle after curing. From the above, the curing agent equivalent of the component (C) is preferably 0.2 to 1.6 times the total of the epoxy equivalent of the component (A) and the functional group equivalent of the component (B). Here, the curing agent equivalent of the component (C) is, for example, a phenol equivalent when the component (C) is a phenolic curing agent, an amine equivalent when the component is an amine curing agent, and an acid anhydride equivalent when the component is an acid anhydride curing agent. is there.
（Ｄ）成分は、フリップチップ実装のためのプレヒート時には半導体封止用フィルムを硬化させないが、フリップチップ実装時には半導体封止用フィルムを硬化させるため、半導体封止用フィルム：１００質量部に対して、２〜５質量部であると好ましい。なお、潜在性硬化剤が、エポキシ樹脂とマスターバッチ化されている場合には、（Ｄ）成分の好ましい量は、当然、マスターバッチ中の潜在性硬化剤の量で計算する。 The component (D) does not cure the semiconductor sealing film during preheating for flip chip mounting, but cures the semiconductor sealing film during flip chip mounting. 2-5 parts by mass is preferable. In addition, when the latent hardening | curing agent is masterbatched with the epoxy resin, naturally the preferable amount of (D) component calculates with the quantity of the latent hardening | curing agent in a masterbatch.
（Ｅ）成分は、硬化後の半導体封止用フィルムの弾性率と熱膨張係数の観点から、先設置型半導体封止用フィルム：１００質量部に対して、３０〜８０質量部であると好ましく、４０〜７０質量部であると、より好ましい。 (E) From a viewpoint of the elasticity modulus and thermal expansion coefficient of the film for semiconductor sealing after hardening, it is preferable in it being 30-80 mass parts with respect to 100 mass parts of pre-installed type semiconductor sealing films. 40-70 parts by mass is more preferable.
半導体封止用フィルムには、本発明の目的を損なわない範囲で、更に必要に応じ、配線やバンプのマイグレーション防止のためのイオントラップ剤、ロジン系フラックス剤、酸無水物系、ヒドラジド系、カルボン酸系等のフラックス剤、シランカップリング剤等のカップリング剤、カーボンブラックなどの顔料、染料、消泡剤、酸化防止剤、レベリング剤、揺変剤、応力緩和剤、その他の添加剤等を配合することができる。特に、カーボンブラックは、隠蔽性の観点から添加されることが好ましい。なお、フリップチップ実装時のボイド抑制の観点から、有機溶媒、特に低沸点の有機溶媒は含有させないことが好ましい。 In the film for semiconductor encapsulation, an ion trap agent for preventing migration of wiring and bumps, rosin flux agent, acid anhydride, hydrazide, carbon, and the like, as long as the object of the present invention is not impaired. Acid-based fluxing agents, coupling agents such as silane coupling agents, pigments such as carbon black, dyes, antifoaming agents, antioxidants, leveling agents, thixotropic agents, stress relaxation agents, other additives, etc. Can be blended. In particular, carbon black is preferably added from the viewpoint of concealment. From the viewpoint of suppressing voids during flip chip mounting, it is preferable not to include an organic solvent, particularly a low boiling point organic solvent.
半導体封止用フィルムの厚さは、フリップチップと基板との間隙、ならびに半導体チップのバンプの高さと基板の配線の高さとの観点から、１０〜１００μｍであると好ましい。 The thickness of the semiconductor sealing film is preferably 10 to 100 μm from the viewpoint of the gap between the flip chip and the substrate, and the height of the bump of the semiconductor chip and the height of the wiring on the substrate.
半導体封止用フィルムの溶融粘度は、貼り付け時のボイド抑制、フリップチップ実装時のボイド抑制の観点から、１０，０００〜４０，０００Ｐａ・ｓであると好ましい。 The melt viscosity of the semiconductor sealing film is preferably 10,000 to 40,000 Pa · s from the viewpoint of suppressing voids at the time of bonding and suppressing voids at the time of flip chip mounting.
半導体封止用フィルムは、支持体上に、半導体封止用フィルム形成用組成物を塗布し、次いで乾燥させて形成することができる。支持体としては、ポリエチレンテレフタレート（ＰＥＴ）フィルム等が挙げられる。 The film for semiconductor encapsulation can be formed by applying a film-forming composition for semiconductor encapsulation on a support and then drying it. Examples of the support include a polyethylene terephthalate (PET) film.
半導体封止用フィルム形成用組成物は、例えば、（Ａ）成分〜（Ｅ）成分およびその他の添加剤等を同時にまたは別々に、必要により加熱処理を加えながら、撹拌、溶融、混合、分散させることにより得ることができる。これらの混合、撹拌、分散等の装置としては、特に限定されるものではないが、撹拌、加熱装置を備えたライカイ機、３本ロールミル、ボールミル、プラネタリーミキサー、ビーズミル等を使用することができる。また、これら装置を適宜組み合わせて使用してもよい。 The composition for forming a film for semiconductor encapsulation, for example, stirs, melts, mixes, and disperses components (A) to (E) and other additives simultaneously or separately, with heat treatment as necessary. Can be obtained. The mixing, stirring, dispersing and the like devices are not particularly limited, and a raikai machine equipped with a stirring and heating device, a three-roll mill, a ball mill, a planetary mixer, a bead mill and the like can be used. . Moreover, you may use combining these apparatuses suitably.
支持体上に、半導体封止用フィルム形成用組成物を塗布する方法は、特に限定されないが、薄膜化・膜厚制御の点からは、マイクログラビア法、スロットダイ法、ドクターブレード法が好ましい。 The method for applying the semiconductor sealing film-forming composition on the support is not particularly limited, but the microgravure method, the slot die method, and the doctor blade method are preferable from the viewpoint of thinning and film thickness control.
支持体上に塗布された半導体封止用フィルム形成用組成物の乾燥条件は、塗布の厚み等に応じて、適宜、設定することができ、例えば、６０〜１２０℃で、１〜３０分程度とすることができる。このようにして得られた半導体封止用フィルムは、未硬化の状態である。 The drying conditions of the film forming composition for encapsulating a semiconductor applied on a support can be appropriately set according to the thickness of the application, for example, at 60 to 120 ° C. for about 1 to 30 minutes. It can be. The semiconductor sealing film thus obtained is in an uncured state.
図２に、半導体封止用フィルムを用いた先設置型フリップチップ実装を説明するための断面の模式図を示す。図２（Ａ）に示すように、まず、配線１２が形成された基板１１を準備する。次に、図２（Ｂ）に示すように、配線１２が形成された基板１１上に、半導体封止用フィルム１０を設置し、プレヒートする。この後、図２（Ｃ）に示すように、基板１１上の配線１２に対応するように、半導体チップ１４に形成されたバンプ１３を位置合わせする。ここで、配線１２と、バンプ１３には、共に、表面にはんだ層が形成されている。最後に、図２（Ｄ）に示すように、基板１１上の配線１２と、半導体チップ１４上のバンプ１３を接触させた後、加熱し、基板１１上の配線１２と半導体チップ１４上のバンプ１３とのはんだ接合と、半導体封止用フィルムの硬化を同時に行う。半導体封止用フィルムは、硬化した先設置型半導体封止用フィルム１０Ａになる。 In FIG. 2, the schematic diagram of the cross section for demonstrating the front-installation type flip chip mounting using the film for semiconductor sealing is shown. As shown in FIG. 2A, first, a substrate 11 on which wirings 12 are formed is prepared. Next, as shown in FIG. 2B, the semiconductor sealing film 10 is placed on the substrate 11 on which the wiring 12 is formed, and preheated. Thereafter, as shown in FIG. 2C, the bumps 13 formed on the semiconductor chip 14 are aligned so as to correspond to the wirings 12 on the substrate 11. Here, both the wiring 12 and the bump 13 have a solder layer formed on the surface thereof. Finally, as shown in FIG. 2D, after the wiring 12 on the substrate 11 and the bump 13 on the semiconductor chip 14 are brought into contact with each other, the wiring 12 on the substrate 11 and the bump on the semiconductor chip 14 are heated. 13 and the semiconductor sealing film are simultaneously cured. The semiconductor sealing film becomes the cured first-installation type semiconductor sealing film 10A.
半導体封止用フィルムのフリップチップ実装時の硬化は、１８０〜３００℃で、５〜３０秒間行うことが好ましく、特に１５秒以内で硬化させると生産性向上の観点から好ましい。 Curing at the time of flip-chip mounting of the semiconductor sealing film is preferably performed at 180 to 300 ° C. for 5 to 30 seconds, and particularly preferably within 15 seconds from the viewpoint of improving productivity.
このように、本発明の先設置型半導体封止用フィルムは、フリップチップ実装のためのプレヒート時には硬化しないが、フリップチップ実装時には硬化するため、先設置型フリップチップ実装に使用可能である。また、実装後に加熱工程を入れ、半導体封止フィルムの硬化を促進させることもできる。 Thus, the pre-installed semiconductor sealing film of the present invention is not cured at the time of preheating for flip chip mounting, but is cured at the time of flip chip mounting, so that it can be used for the pre-installed flip chip mounting. Moreover, a heating process can be put after mounting and the hardening of a semiconductor sealing film can also be accelerated | stimulated.
本発明について、実施例により説明するが、本発明はこれらに限定されるものではない。なお、以下の実施例において、部、％はことわりのない限り、質量部、質量％を示す。 The present invention will be described with reference to examples, but the present invention is not limited thereto. In the following examples, parts and% indicate parts by mass and mass% unless otherwise specified.
〔実施例１〜２０、比較例１〜５、参考例１〜３〕
表１〜３に示す配合で、半導体封止用フィルム形成用組成物を調整した。メチルエチルケトンに、（Ａ）〜（Ｄ）成分を混合した後、（Ｅ）成分を混合し、半導体封止用フィルム形成用組成物を得た。得られた半導体封止用フィルム形成用組成物を、ドクターブレードを用いて塗布した後、乾燥して、厚さ：５０μｍの半導体封止用フィルムを得た。また、表１〜３に、ＮＥＴＺＳＣＨ製ＤＳＣ（型番：ＤＳＣ２０４ Ｆ１ Ｐｈｏｅｎｉｘ）で測定した（Ｄ）成分の反応開始温度を示す。なお、表３で、（Ｄ）成分の代わりにイミダゾールを使用した比較例４、５では、反応開始温度または活性開始温の欄に、イミダゾールの活性開始温度を示す。ここで、活性開始温度は、イミダゾールが単体で活性化する温度をいい、ＤＳＣで発熱が開始する温度から測定した。図３に、実施例１で用いた（Ｄ）成分のＤＳＣでの測定結果を示す。図３の破線は、ベースラインを示す。図３からわかるように、実施例１で用いた（Ｄ）成分の発熱開始温度は、１１０℃であった。
[Examples 1 to 20, Comparative Examples 1 to 5, Reference Examples 1 to 3]
The composition for film formation for semiconductor sealing was adjusted with the composition shown in Tables 1-3. The components (A) to (D) were mixed with methyl ethyl ketone, and then the component (E) was mixed to obtain a film forming composition for semiconductor encapsulation. The obtained semiconductor sealing film-forming composition was applied using a doctor blade and then dried to obtain a semiconductor sealing film having a thickness of 50 μm. In addition, Tables 1 to 3 show the reaction start temperatures of the component (D) measured by a NETZSCH DSC (model number: DSC204 F1 Phoenix). In Table 3, in Comparative Examples 4 and 5 using imidazole instead of the component (D), the activity start temperature of imidazole is shown in the column of reaction start temperature or activity start temperature. Here, the activation start temperature refers to the temperature at which imidazole is activated alone, and was measured from the temperature at which DSC started to generate heat. In FIG. 3, the measurement result in DSC of (D) component used in Example 1 is shown. A broken line in FIG. 3 indicates a baseline. As can be seen from FIG. 3, the heat generation start temperature of the component (D) used in Example 1 was 110 ° C.
〔先設置時の安定性の評価〕
先設置型フリップチップ実装での先設置時の安定性を評価するために、半導体封止用フィルムの最低溶融粘度（初期の最低溶融粘度）を、Ｖｉｓｃｏａｎａｌｙｓｅｒ製ＶＡＲ１００により測定した。次に、７０℃で３時間保持した後の最低溶融粘度を、同様に測定した。先設置時の安定性（単位：％）を、下記式：
（先設置時の安定性）＝（３時間後の最低溶融粘度）／（初期の最低溶融粘度）
×１００
により求めた。設置時の安定は、１６０％以下であれば、良好である。表１〜表３に、設置時の安定性の評価結果を示す。
[Evaluation of stability during installation]
In order to evaluate the stability at the time of pre-installation in the pre-installation type flip chip mounting, the minimum melt viscosity (initial minimum melt viscosity) of the semiconductor sealing film was measured by VAR100 manufactured by Viscoanalyzer. Next, the minimum melt viscosity after being held at 70 ° C. for 3 hours was similarly measured. The stability at the time of installation (unit:%) is expressed by the following formula:
(Stability at installation) = (Minimum melt viscosity after 3 hours) / (Initial minimum melt viscosity)
× 100
Determined by The stability at the time of installation is good if it is 160% or less. Tables 1 to 3 show the evaluation results of stability at the time of installation.
〔基板上の配線と半導体チップ上のバンプとの接続性の評価〕
３０μｍのバンプが、５０μｍピッチで５４４個形成された幅：７ｍｍ、長さ：７ｍｍ、厚さ：１２５μｍのＳｉチップを準備した。バンプは、Ｃｕピラーにはんだキャップされたバンプである。また、シリコンチップのバンプパターンに対応した配線を有する基板厚さ：３５０μｍのガラスエポキシ基板を準備した。この配線を有する基板に半導体封止用フィルムを載置し、７０℃でプレヒートを行った。プレヒートされた基板上の配線の上に、フリップチップボンダーを用いて、Ｓｉチップ上のバンプと、基板上の配線を、荷重３０Ｎ、２００℃で１．２秒接触させた後、昇温し、２８０℃で１０秒保持した後、２００℃まで冷却して、フリップチップボンダーから取り出し、評価サンプルを作製した。Ｓｉチップ上のバンプと、基板上の配線間の抵抗値をアジレント・テクノロジー社製マルチメーター（型番：ＨＰ３４４０１Ａ）で測定し、抵抗値が設計値の１．１倍未満である場合を「◎」、設計値の１．１倍以上であるが測定器の測定範囲内であった場合を「○」、測定器の測定レンジ外であるため、測定できなかった場合を「×」とした。ここで、抵抗値の設計値は、２９Ωであった。表１〜表３に、基板上の配線と半導体チップ上のバンプとの接続性の評価結果（表には、接続性と記載した）を示す。
[Evaluation of connectivity between wiring on substrate and bump on semiconductor chip]
A Si chip having a width of 7 mm, a length of 7 mm, and a thickness of 125 μm in which 544 bumps of 30 μm were formed at a pitch of 50 μm was prepared. The bumps are bumps that are solder-capped with Cu pillars. Further, a glass epoxy substrate having a substrate thickness: 350 μm having wiring corresponding to the bump pattern of the silicon chip was prepared. A film for sealing a semiconductor was placed on the substrate having the wiring and preheated at 70 ° C. Using a flip chip bonder, the bump on the Si chip and the wiring on the substrate were brought into contact with each other at a load of 30 N and 200 ° C. for 1.2 seconds on the preheated wiring on the substrate, and then the temperature was raised. After maintaining at 280 ° C. for 10 seconds, the sample was cooled to 200 ° C. and taken out from the flip chip bonder to prepare an evaluation sample. When the resistance value between the bump on the Si chip and the wiring on the substrate is measured with a multimeter (model number: HP34001A) manufactured by Agilent Technologies, the resistance value is less than 1.1 times the design value. The case where it was 1.1 times or more of the design value but was within the measurement range of the measuring device was “◯”, and the case where it was not possible to measure because it was outside the measuring range of the measuring device was “×”. Here, the design value of the resistance value was 29Ω. Tables 1 to 3 show the evaluation results of the connectivity between the wiring on the substrate and the bumps on the semiconductor chip (shown as connectivity in the table).
図４に、実施例７の断面の走査型電子顕微鏡写真を示す。図５に、実施例１の断面の走査型電子顕微鏡写真を示す。図６に、比較例１の断面の走査型電子顕微鏡写真を示す。図４は、この接続性評価の結果が「◎」の場合であり、図５は、「○」の場合であり、図６は「×」の場合である。図６では、基板上の配線と半導体チップ上のバンプとの間に、半導体封止用フィルムが残存していた。 In FIG. 4, the scanning electron micrograph of the cross section of Example 7 is shown. In FIG. 5, the scanning electron micrograph of the cross section of Example 1 is shown. In FIG. 6, the scanning electron micrograph of the cross section of the comparative example 1 is shown. FIG. 4 shows a case where the connectivity evaluation result is “◎”, FIG. 5 shows a case where “◯”, and FIG. 6 shows a case where “×”. In FIG. 6, the semiconductor sealing film remains between the wiring on the substrate and the bump on the semiconductor chip.
〔ボイド発生率の評価〕
基板上の配線と半導体チップ上のバンプとの接続性の評価のために作製した評価サンプルを、超音波顕微鏡で測定し、ボイド発生率の評価を行った。ボイド発生率（単位：％）は、下記式：
（ボイド発生率）＝（ボイド面積）／（チップ面積）×１００
で求めた。表１〜表３に、ボイド発生率の評価結果を示す。
[Evaluation of void generation rate]
An evaluation sample prepared for evaluating the connectivity between the wiring on the substrate and the bump on the semiconductor chip was measured with an ultrasonic microscope, and the void generation rate was evaluated. The void generation rate (unit:%) is expressed by the following formula:
(Void occurrence rate) = (Void area) / (Chip area) × 100
I asked for it. Tables 1 to 3 show the evaluation results of the void generation rate.
〔基板と半導体チップとの接着強度の評価〕
基板上の配線と半導体チップ上のバンプとの接続性の評価のために作製した評価サンプルを用いた。図７に、基板と半導体チップとの接着強度の評価方法を説明する模式図を示す。基板３１として、１５０℃で２０分乾燥したＦＲ−４基板と、半導体チップ３４として、２ｍｍ角のＳｉＮ膜付きＳｉチップを準備した。１ｍｍ角の半導体封止用フィルムを、基板３１上に載置して、半導体封止用フィルム上に、半導体チップ３４をマウントした。この後、１６０℃で６０分間、半導体封止用フィルムを硬化させ、硬化した半導体封止用フィルム３０Ａを形成した。アイコ−エンジニアリング製卓上強度試験器（型番：１６０５ＨＴＰ）を使用して、剪断強度（単位：Ｎ／ｍｍ２）を測定した。剪断強度は、３．０Ｎ／ｍｍ２以上であると良好である。表１〜表３に、基板と半導体チップとの剪断強度（表には接着強度と記載した）の評価結果を示す。
[Evaluation of bonding strength between substrate and semiconductor chip]
An evaluation sample prepared for evaluating the connectivity between the wiring on the substrate and the bump on the semiconductor chip was used. FIG. 7 is a schematic diagram illustrating a method for evaluating the adhesive strength between the substrate and the semiconductor chip. An FR-4 substrate dried at 150 ° C. for 20 minutes as a substrate 31 and a 2 mm square SiN film-attached Si chip as a semiconductor chip 34 were prepared. A 1 mm square semiconductor sealing film was placed on the substrate 31, and the semiconductor chip 34 was mounted on the semiconductor sealing film. Thereafter, the semiconductor sealing film was cured at 160 ° C. for 60 minutes to form a cured semiconductor sealing film 30A. Shear strength (unit: N / mm 2 ) was measured using an Aiko-Engineering tabletop strength tester (model number: 1605HTP). The shear strength is preferably 3.0 N / mm 2 or more. Tables 1 to 3 show the evaluation results of the shear strength (described as adhesive strength in the table) between the substrate and the semiconductor chip.
試験結果をまとめると、実施例１〜２１の全てで、先設置時の安定性、基板上の配線と半導体チップ上のバンプとの接続性、ボイド発生率、基板と半導体チップとの接着強度の評価結果が良好であった。特に、実施例２〜１８、２０では、基板上の配線と半導体チップ上のバンプとの接続性の評価結果が、非常に良好であった。これに対して、潜在性硬化促進剤を４０℃で加熱処理した比較例１は、先設置時の安定性と接続性が悪く、潜在性硬化促進剤を１１０℃で加熱処理した比較例２は、エポキシ樹脂と潜在性硬化剤とのマスターバッチを加熱処理したときに、マスターバッチが半硬化してしまい、半導体封止用フィルム形成用組成物の混合ができなかった。加熱処理をしていない潜在性硬化促進剤を使用した比較例３は、先設置時の安定性と接続性が悪かった。参考例１は、エポキシ樹脂と潜在性硬化剤とのマスターバッチを加熱処理したときに、マスターバッチが硬化してしまい、半導体封止用フィルム形成用組成物の混合ができなかった。（Ｄ）成分の代わりにイミダゾール１を用いた比較例４は、ボイド発生率が高かった。（Ｄ）成分の代わりにイミダゾール２を用いた比較例５は、基板上の配線と半導体チップ上のバンプとの接続性が悪く、先設置時の安定性の評価試験で半硬化してしまった。（Ｄ）成分として、５０℃で１２時間の加熱処理をした潜在性硬化剤を用いた参考例２は、先設置時の安定性と接続性が悪かった。 To summarize the test results, in all of Examples 1 to 21, the stability of the previous installation, the connectivity between the wiring on the substrate and the bump on the semiconductor chip, the void generation rate, the adhesive strength between the substrate and the semiconductor chip. The evaluation result was good. In particular, in Examples 2 to 18 and 20, the evaluation results of the connectivity between the wiring on the substrate and the bump on the semiconductor chip were very good. In contrast, Comparative Example 1 in which the latent curing accelerator was heat-treated at 40 ° C. had poor stability and connectivity at the time of installation, and Comparative Example 2 in which the latent curing accelerator was heat-treated at 110 ° C. When the master batch of the epoxy resin and the latent curing agent was heat-treated, the master batch was semi-cured, and the film forming composition for semiconductor encapsulation could not be mixed. Comparative Example 3 using a latent curing accelerator that was not heat-treated had poor stability and connectivity at the time of installation. In Reference Example 1, when the master batch of the epoxy resin and the latent curing agent was heat-treated, the master batch was cured, and the composition for forming a film for semiconductor encapsulation could not be mixed. In Comparative Example 4 using imidazole 1 instead of the component (D), the void generation rate was high. In Comparative Example 5 using imidazole 2 instead of the component (D), the connectivity between the wiring on the substrate and the bump on the semiconductor chip was poor, and it was semi-cured in the stability evaluation test at the time of installation. . Reference Example 2 using a latent curing agent that was heat-treated at 50 ° C. for 12 hours as the component (D) had poor stability and connectivity at the time of previous installation.
本発明の先設置型半導体封止用フィルムは、フリップチップ実装のためのプレヒート時には硬化しないが、フリップチップ実装時には硬化するため、先設置型フリップチップ実装に使用可能である。このため、本発明の先設置型半導体封止用フィルムを用いることにより、低コストで、低エネルギーの先設置型フリップチップ実装で製造された半導体装置を得ることができる。 The pre-installed semiconductor sealing film of the present invention is not cured during preheating for flip chip mounting, but is cured during flip chip mounting, and thus can be used for pre-installed flip chip mounting. For this reason, by using the pre-installed semiconductor sealing film of the present invention, a semiconductor device manufactured by low-cost, low-energy pre-installed flip chip mounting can be obtained.
１、２ 半導体装置
１０ 先設置型半導体封止用フィルム
１０Ａ、３０Ａ 硬化した先設置型半導体封止用フィルム
１１、２１、３１ 基板
１２、２２ 配線
１３、２３ バンプ
１４、２４、３４ 半導体チップ
２０ 先供給型液状封止樹脂組成物
２０Ｂ、２０Ｃ ブリード
３５ シェアツール
DESCRIPTION OF SYMBOLS 1, 2 Semiconductor device 10 Pre-installation type semiconductor sealing film 10A, 30A Cured pre-installation type semiconductor sealing film 11, 21, 31 Substrate 12, 22 Wiring 13, 23 Bump 14, 24, 34 Semiconductor chip 20 Supply type liquid sealing resin composition 20B, 20C Bleed 35 Share tool
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