JP6092528B2 - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 135
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 79
- 229910052710 silicon Inorganic materials 0.000 claims description 55
- 239000010703 silicon Substances 0.000 claims description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 10
- 239000010408 film Substances 0.000 description 197
- 239000007789 gas Substances 0.000 description 64
- 238000000151 deposition Methods 0.000 description 40
- 230000008021 deposition Effects 0.000 description 39
- 239000001257 hydrogen Substances 0.000 description 23
- 229910052739 hydrogen Inorganic materials 0.000 description 23
- 239000000758 substrate Substances 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- 150000002431 hydrogen Chemical class 0.000 description 11
- 230000003071 parasitic effect Effects 0.000 description 11
- 229910004205 SiNX Inorganic materials 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- 238000010790 dilution Methods 0.000 description 9
- 239000012895 dilution Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 229910052743 krypton Inorganic materials 0.000 description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 6
- 229910052754 neon Inorganic materials 0.000 description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図1は、本発明の一態様に係るボトムゲート型TFTを示す断面図である。
ガラス基板(図示せず)上にはゲート電極101が形成されている。ゲート電極101およびガラス基板の上には第1のゲート絶縁膜102が形成されており、第1のゲート絶縁膜102上には第2のゲート絶縁膜103が形成されている。第1のゲート絶縁膜102は例えば窒化シリコン膜(以下、「SiNx膜」という。)からなることが好ましく、第2のゲート絶縁膜103は例えば酸化シリコン膜(以下、「SiOx膜」という。)からなることが好ましい。ただし、x>0である。
図3(A)は、本発明の一態様に係るボトムゲート型TFTを示す上面図であり、図3(B)は、図3(A)に示す3B−3B'断面図である。図4(A)は、図3に示すボトムゲート型TFTと同一基板上に形成された配線部の上面図であり、図4(B)は、図4(A)に示す4B−4B'断面図である。
また、本実施の形態を高解像度パネルに適用した場合に、配線間で生じる寄生容量を低減できるため高速駆動化が可能となる。
本実施の形態では、本発明の一態様に係るボトムゲート型TFTの作製方法について、図5乃至図9を参照して説明する。
なお、堆積温度は、室温〜300℃とすることが好ましく、より好ましくは150〜280℃とする。なお、プラズマCVD装置の上部電極及び下部電極の間隔は、プラズマが発生しうる間隔とすればよい。
このときの堆積温度は、室温〜300℃とすることが好ましく、より好ましくは150〜280℃とする。なお、プラズマCVD装置の上部電極及び下部電極の間隔は、プラズマが発生しうる間隔とすればよい。
102 第1のゲート絶縁膜
103 第2のゲート絶縁膜
104 μc−Si層
104a 結晶成長している領域
105 a−Si層
106 n+Si層
107a ソース電極
107b ドレイン電極
108 チャネルストップ膜
109 保護絶縁膜
137 絶縁膜
139 バックゲート電極
Claims (2)
- ゲート電極を覆うようにゲート絶縁膜を形成し、
前記ゲート絶縁膜上に、前記ゲート電極の上方に位置する微結晶シリコン層を形成し、
前記微結晶シリコン層及び前記ゲート絶縁膜の上にアモルファスシリコン層を形成し、
前記アモルファスシリコン層上に不純物シリコン層を形成し、
前記不純物シリコン層上にソース電極およびドレイン電極を形成し、
前記アモルファスシリコン層を形成する条件は、前記微結晶シリコン層に接して形成されるアモルファスシリコン層では結晶成長し、前記ゲート絶縁膜に接して形成されるアモルファスシリコン層では結晶成長しない条件とし、
前記ゲート絶縁膜を形成する際は、前記ゲート電極を覆うように窒化シリコン膜を形成し、前記窒化シリコン膜上に酸化シリコン膜を形成することとし、
前記酸化シリコン膜は、前記微結晶シリコン層と接して形成され、
前記窒化シリコン膜は、前記アモルファスシリコン層と接して形成されることを特徴とする半導体装置の作製方法。 - ゲート電極を覆うようにゲート絶縁膜を形成し、
前記ゲート絶縁膜上に、前記ゲート電極の上方に位置する微結晶シリコン層および前記微結晶シリコン層上に位置するチャネルストップ膜を形成し、
前記チャネルストップ膜、前記微結晶シリコン層及び前記ゲート絶縁膜の上にアモルファスシリコン層を形成し、
前記アモルファスシリコン層上に不純物シリコン層を形成し、
前記不純物シリコン層上に導電膜を形成し、
前記チャネルストップ膜によって前記微結晶シリコン層を保護しながら、前記導電膜、前記不純物シリコン層および前記アモルファスシリコン層をエッチングすることにより、前記導電膜からなるソース電極およびドレイン電極を形成し、
前記アモルファスシリコン層を形成する条件は、前記微結晶シリコン層に接して形成されるアモルファスシリコン層では結晶成長し、前記ゲート絶縁膜に接して形成されるアモルファスシリコン層では結晶成長しない条件とし、
前記ゲート絶縁膜を形成する際は、前記ゲート電極を覆うように窒化シリコン膜を形成し、前記窒化シリコン膜上に酸化シリコン膜を形成することとし、
前記酸化シリコン膜は、前記微結晶シリコン層と接して形成され、
前記窒化シリコン膜は、前記アモルファスシリコン層と接して形成されることを特徴とする半導体装置の作製方法。
Priority Applications (1)
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JP2012117148A JP6092528B2 (ja) | 2011-05-24 | 2012-05-23 | 半導体装置およびその作製方法 |
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JP2011116173 | 2011-05-24 | ||
JP2011116173 | 2011-05-24 | ||
JP2012117148A JP6092528B2 (ja) | 2011-05-24 | 2012-05-23 | 半導体装置およびその作製方法 |
Publications (2)
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JP2013008956A JP2013008956A (ja) | 2013-01-10 |
JP6092528B2 true JP6092528B2 (ja) | 2017-03-08 |
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JP2012117148A Expired - Fee Related JP6092528B2 (ja) | 2011-05-24 | 2012-05-23 | 半導体装置およびその作製方法 |
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US (1) | US20120298999A1 (ja) |
JP (1) | JP6092528B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US10304859B2 (en) | 2013-04-12 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having an oxide film on an oxide semiconductor film |
EP2858118B1 (en) * | 2013-10-07 | 2016-09-14 | IMEC vzw | Selector for RRAM |
JP6822114B2 (ja) * | 2016-12-13 | 2021-01-27 | 天馬微電子有限公司 | 表示装置、トランジスタ回路及び薄膜トランジスタの駆動方法 |
Family Cites Families (9)
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JPH02156676A (ja) * | 1988-12-09 | 1990-06-15 | Fuji Xerox Co Ltd | 薄膜半導体装置 |
JPH05107560A (ja) * | 1991-10-21 | 1993-04-30 | Hitachi Ltd | 液晶表示装置とその製造方法 |
CN101765917B (zh) * | 2007-08-07 | 2012-07-18 | 株式会社半导体能源研究所 | 显示器件及具有该显示器件的电子设备及其制造方法 |
JP2009070861A (ja) * | 2007-09-11 | 2009-04-02 | Hitachi Displays Ltd | 表示装置 |
JP5562603B2 (ja) * | 2008-09-30 | 2014-07-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2010113253A (ja) * | 2008-11-07 | 2010-05-20 | Hitachi Displays Ltd | 表示装置及び表示装置の製造方法 |
JP4923069B2 (ja) * | 2009-01-14 | 2012-04-25 | 三菱電機株式会社 | 薄膜トランジスタ基板、及び半導体装置 |
JP2010225780A (ja) * | 2009-03-23 | 2010-10-07 | Casio Computer Co Ltd | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
JP2012182225A (ja) * | 2011-02-28 | 2012-09-20 | Japan Display East Co Ltd | 表示装置及び表示装置の製造方法 |
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- 2012-05-22 US US13/477,353 patent/US20120298999A1/en not_active Abandoned
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