JP6088659B2 - 基板処理装置及びヒータの温度調節方法 - Google Patents

基板処理装置及びヒータの温度調節方法 Download PDF

Info

Publication number
JP6088659B2
JP6088659B2 JP2015545382A JP2015545382A JP6088659B2 JP 6088659 B2 JP6088659 B2 JP 6088659B2 JP 2015545382 A JP2015545382 A JP 2015545382A JP 2015545382 A JP2015545382 A JP 2015545382A JP 6088659 B2 JP6088659 B2 JP 6088659B2
Authority
JP
Japan
Prior art keywords
heater
gas flow
cooling ring
outside
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015545382A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016506070A (ja
Inventor
ジェ，ソン−テ
ヤン，イル−クヮン
ホ イ，ジェ
ホ イ，ジェ
キム，キョン−フン
キム，ミョン−イン
シン，ヤン−シク
Original Assignee
ユ−ジーン テクノロジー カンパニー．リミテッド
ユ−ジーン テクノロジー カンパニー．リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ユ−ジーン テクノロジー カンパニー．リミテッド, ユ−ジーン テクノロジー カンパニー．リミテッド filed Critical ユ−ジーン テクノロジー カンパニー．リミテッド
Publication of JP2016506070A publication Critical patent/JP2016506070A/ja
Application granted granted Critical
Publication of JP6088659B2 publication Critical patent/JP6088659B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2015545382A 2012-12-18 2013-12-18 基板処理装置及びヒータの温度調節方法 Active JP6088659B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020120148665A KR101375742B1 (ko) 2012-12-18 2012-12-18 기판처리장치
KR10-2012-0148665 2012-12-18
PCT/KR2013/011839 WO2014098486A1 (fr) 2012-12-18 2013-12-18 Appareil de traitement de substrat et procédé pour commander la température d'un élément chauffant

Publications (2)

Publication Number Publication Date
JP2016506070A JP2016506070A (ja) 2016-02-25
JP6088659B2 true JP6088659B2 (ja) 2017-03-01

Family

ID=50649024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015545382A Active JP6088659B2 (ja) 2012-12-18 2013-12-18 基板処理装置及びヒータの温度調節方法

Country Status (5)

Country Link
US (1) US9758870B2 (fr)
JP (1) JP6088659B2 (fr)
KR (1) KR101375742B1 (fr)
CN (1) CN104871292B (fr)
WO (1) WO2014098486A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9963782B2 (en) * 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
KR101930788B1 (ko) * 2016-11-23 2018-12-24 주식회사 조인솔루션 기판 프로세싱 챔버의 냉각기
US10801106B2 (en) * 2016-12-15 2020-10-13 Asm Ip Holding B.V. Shower plate structure for exhausting deposition inhibiting gas
CN106987808B (zh) * 2017-05-15 2019-04-09 成都西沃克真空科技有限公司 一种镀膜机用基片加热装置
JP7008602B2 (ja) * 2018-09-27 2022-01-25 東京エレクトロン株式会社 成膜装置および温度制御方法
JP7477515B2 (ja) * 2019-01-08 2024-05-01 アプライド マテリアルズ インコーポレイテッド 基板処理チャンバ用のポンピング装置及び方法
KR102315665B1 (ko) * 2019-08-19 2021-10-22 세메스 주식회사 기판 처리 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2560986B2 (ja) * 1993-07-27 1996-12-04 日本電気株式会社 タングステンｃｖｄ装置
JP3665672B2 (ja) * 1995-11-01 2005-06-29 東京エレクトロン株式会社 成膜装置及び成膜方法
KR100304971B1 (ko) * 1999-09-10 2001-11-07 김영환 반도체소자 제조를 위한 박막 증착 공정용 히터블록
JP2002198297A (ja) * 2000-12-27 2002-07-12 Kyocera Corp ウエハ加熱装置
JP2005136025A (ja) * 2003-10-29 2005-05-26 Trecenti Technologies Inc 半導体製造装置、半導体装置の製造方法及びウエハステージ
TWI574318B (zh) * 2004-06-21 2017-03-11 Tokyo Electron Ltd A plasma processing apparatus, a plasma processing method, and a computer-readable recording medium
KR20070014716A (ko) * 2005-07-29 2007-02-01 삼성전자주식회사 히터블록의 온도강하지그
CN101395705B (zh) * 2007-02-09 2011-08-10 株式会社日立国际电气 隔热构造体、加热装置、基板处理设备以及半导体器件的制造方法
JP5197030B2 (ja) * 2008-01-16 2013-05-15 株式会社東芝 エピタキシャルウェーハの製造装置及び製造方法
JP5331580B2 (ja) 2008-07-02 2013-10-30 日本碍子株式会社 ウエハ載置装置及びそれに用いる部品
CN102598217B (zh) * 2009-10-28 2015-03-25 丽佳达普株式会社 金属有机化学汽相淀积设备及其温度控制方法
JP2011096894A (ja) * 2009-10-30 2011-05-12 Toshiba Corp 半導体装置の製造方法および製造装置
US8552346B2 (en) * 2011-05-20 2013-10-08 Applied Materials, Inc. Methods and apparatus for controlling temperature of a multi-zone heater in an process chamber

Also Published As

Publication number Publication date
US9758870B2 (en) 2017-09-12
US20150299860A1 (en) 2015-10-22
CN104871292B (zh) 2017-04-26
CN104871292A (zh) 2015-08-26
WO2014098486A1 (fr) 2014-06-26
KR101375742B1 (ko) 2014-03-19
JP2016506070A (ja) 2016-02-25

Similar Documents

Publication Publication Date Title
JP6088659B2 (ja) 基板処理装置及びヒータの温度調節方法
US10145012B2 (en) Substrate processing apparatus and substrate processing method
US10287687B2 (en) Substrate processing device
JP6093860B2 (ja) 基板処理装置
US11784070B2 (en) Heat treatment apparatus, heat treatment method, and film forming method
JP2020047911A (ja) 基板処理装置、半導体装置の製造方法及びプログラム
US8968475B2 (en) Substrate processing apparatus
TWI512845B (zh) 基板處理裝置
JP6002837B2 (ja) 基板処理装置
JP6974884B2 (ja) シャワーヘッド及び基板処理装置
TWI569346B (zh) 基板處理裝置及加熱器之溫度調整方法
KR101452829B1 (ko) 히터의 온도조절방법
JP6561148B2 (ja) 基板処理装置、継手部および半導体装置の製造方法
JP5957609B2 (ja) 基板処理装置
JP7537147B2 (ja) 載置台、基板を処理する装置、及び基板を温度調節する方法
JP2010074048A (ja) 基板処理装置

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160624

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160704

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160830

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20160830

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170106

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170203

R150 Certificate of patent or registration of utility model

Ref document number: 6088659

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250