JP6083049B2 - 蛍光体及び発光装置 - Google Patents
蛍光体及び発光装置 Download PDFInfo
- Publication number
- JP6083049B2 JP6083049B2 JP2013557358A JP2013557358A JP6083049B2 JP 6083049 B2 JP6083049 B2 JP 6083049B2 JP 2013557358 A JP2013557358 A JP 2013557358A JP 2013557358 A JP2013557358 A JP 2013557358A JP 6083049 B2 JP6083049 B2 JP 6083049B2
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- JP
- Japan
- Prior art keywords
- phosphor
- light emitting
- sialon
- emitting device
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 114
- 150000004767 nitrides Chemical class 0.000 claims description 26
- 238000002156 mixing Methods 0.000 claims description 19
- 230000005284 excitation Effects 0.000 claims description 6
- 238000009877 rendering Methods 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- TVGGZXXPVMJCCL-UHFFFAOYSA-N [Si].[La] Chemical compound [Si].[La] TVGGZXXPVMJCCL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- FZTPSPNAZCIDGO-UHFFFAOYSA-N barium(2+);silicate Chemical compound [Ba+2].[Ba+2].[O-][Si]([O-])([O-])[O-] FZTPSPNAZCIDGO-UHFFFAOYSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- -1 lutetium aluminum Chemical compound 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0838—Aluminates; Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Description
<測定法>
1)試料セット:石英製セルに測定試料又は標準試料をそれぞれ充填し、測定機に交互にセットして測定した。充填は、相対充填密度35%程度になるようにしてセル高さの3/4程度まで充填した。
2)測定:455nmの光で励起し、300nmから800nmの最大ピークの高さを読み取った。測定を5回行ない、最大値、最小値を除いて残りの3点の平均値とした。
表2の初期評価として、演色性の評価を採用した。演色性の評価には色再現範囲を採用し、色座標におけるNTSC規格比の面積(%)で表した。数字が大きいほど演色性が高い。評価の合格条件は70%以上である。一般的に、72%以上は優れた色再現性、68%未満は色再現性に劣るとされ、これは一般的なLED−TV向けに採用されている条件である。
比較例1、3、5、6、7、8、9は色再現性に劣り、比較例2、4、10では光束値が小さい。また、シリケート系蛍光体(表1のP7)を酸窒化物蛍光体(A)又は窒化物蛍光体(B)の配合量を超えて多量に用いた比較例1、2、7、8では、高温特性、長期信頼性に劣り、信頼性の低いLEDパッケージとなって、テレビやモニターなどの製品に適用することは到底望めない。
Claims (5)
- 波長455nmの光励起でのピーク波長585nm以上604nm以下、蛍光強度185%以上210%以下の酸窒化物蛍光体(A)としてαサイアロンと、
440nm以上460nm以下の波長で光励起したときに生じるピーク波長625nm以上635nm以下の窒化物蛍光体(B)としてSCASNと、を有し、
前記αサイアロンと前記SCASNとの配合割合が各々4質量%以上12質量%以下、前記αサイアロン及び前記SCASNの合計の配合量が10質量%以上24質量%以下である、白色発光装置用蛍光体。 - 請求項1記載の前記蛍光体の配合比が、前記αサイアロン及び前記SCASNの配合割合をa及びbとしたときに、0.33≦a/b≦3である白色発光装置用蛍光体。
- 残部として波長440nm以上460nm以下の光で励起される緑色蛍光体及び/又は黄色蛍光体を含む請求項1又は2に記載の白色発光装置用蛍光体。
- 前記緑色蛍光体はEuを付活したβサイアロンである請求項3に記載の白色発光装置用蛍光体。
- 請求項1乃至4のいずれか1項に記載の蛍光体と、当該蛍光体を発光面に搭載したLEDとを有する白色発光装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012026608 | 2012-02-09 | ||
JP2012026608 | 2012-02-09 | ||
PCT/JP2012/070397 WO2013118334A1 (ja) | 2012-02-09 | 2012-08-09 | 蛍光体及び発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013118334A1 JPWO2013118334A1 (ja) | 2015-05-11 |
JP6083049B2 true JP6083049B2 (ja) | 2017-02-22 |
Family
ID=48922717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013557358A Expired - Fee Related JP6083049B2 (ja) | 2012-02-09 | 2012-08-09 | 蛍光体及び発光装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6083049B2 (ja) |
CN (1) | CN103242835B (ja) |
TW (1) | TWI572065B (ja) |
WO (1) | WO2013118334A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101467808B1 (ko) * | 2014-07-14 | 2014-12-03 | 엘지전자 주식회사 | 황색 발광 형광체 및 이를 이용한 발광 소자 패키지 |
KR102261952B1 (ko) * | 2014-08-26 | 2021-06-08 | 엘지이노텍 주식회사 | 형광체 조성물 및 이를 포함하는 발광 소자 패키지 |
JP6524860B2 (ja) * | 2014-09-30 | 2019-06-05 | 日亜化学工業株式会社 | 発光装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4104013B2 (ja) * | 2005-03-18 | 2008-06-18 | 株式会社フジクラ | 発光デバイス及び照明装置 |
JP2007070445A (ja) * | 2005-09-06 | 2007-03-22 | Sharp Corp | 発光装置 |
JP2007291352A (ja) * | 2006-03-27 | 2007-11-08 | Mitsubishi Chemicals Corp | 蛍光体及びそれを使用した発光装置 |
JP2008019407A (ja) * | 2006-06-12 | 2008-01-31 | Sharp Corp | 蛍光体の製造方法、蛍光体、半導体発光装置および画像表示装置 |
DE102008038249A1 (de) * | 2008-08-18 | 2010-02-25 | Osram Gesellschaft mit beschränkter Haftung | alpha-Sialon-Leuchtstoff |
DE102009010705A1 (de) * | 2009-02-27 | 2010-09-02 | Merck Patent Gmbh | Co-dotierte 2-5-8 Nitride |
JP5540322B2 (ja) * | 2009-03-26 | 2014-07-02 | 独立行政法人物質・材料研究機構 | 蛍光体、その製造方法、発光器具および画像表示装置 |
JP2011228344A (ja) * | 2010-04-15 | 2011-11-10 | Hitachi Ltd | Led発光装置 |
-
2012
- 2012-08-09 JP JP2013557358A patent/JP6083049B2/ja not_active Expired - Fee Related
- 2012-08-09 WO PCT/JP2012/070397 patent/WO2013118334A1/ja active Application Filing
- 2012-09-06 TW TW101132442A patent/TWI572065B/zh not_active IP Right Cessation
- 2012-11-26 CN CN201210487684.3A patent/CN103242835B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2013118334A1 (ja) | 2013-08-15 |
JPWO2013118334A1 (ja) | 2015-05-11 |
TWI572065B (zh) | 2017-02-21 |
CN103242835B (zh) | 2015-04-29 |
TW201334236A (zh) | 2013-08-16 |
CN103242835A (zh) | 2013-08-14 |
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