JP6082655B2 - 半導体製造装置およびその使用方法 - Google Patents

半導体製造装置およびその使用方法 Download PDF

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JP6082655B2
JP6082655B2 JP2013108286A JP2013108286A JP6082655B2 JP 6082655 B2 JP6082655 B2 JP 6082655B2 JP 2013108286 A JP2013108286 A JP 2013108286A JP 2013108286 A JP2013108286 A JP 2013108286A JP 6082655 B2 JP6082655 B2 JP 6082655B2
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slit
antenna
semiconductor manufacturing
radial direction
manufacturing apparatus
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JP2014229752A5 (enrdf_load_stackoverflow
JP2014229752A (ja
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小野　哲郎
哲郎 小野
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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  • Drying Of Semiconductors (AREA)
JP2013108286A 2013-05-22 2013-05-22 半導体製造装置およびその使用方法 Expired - Fee Related JP6082655B2 (ja)

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JP2013108286A JP6082655B2 (ja) 2013-05-22 2013-05-22 半導体製造装置およびその使用方法

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JP2013108286A JP6082655B2 (ja) 2013-05-22 2013-05-22 半導体製造装置およびその使用方法

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JP2014229752A JP2014229752A (ja) 2014-12-08
JP2014229752A5 JP2014229752A5 (enrdf_load_stackoverflow) 2016-01-21
JP6082655B2 true JP6082655B2 (ja) 2017-02-15

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102748017B1 (ko) 2021-12-28 2024-12-31 세메스 주식회사 기판 처리 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343334A (ja) * 1992-06-09 1993-12-24 Hitachi Ltd プラズマ発生装置
JP4203028B2 (ja) * 1996-07-08 2008-12-24 株式会社東芝 プラズマ処理装置
JP4107736B2 (ja) * 1998-11-16 2008-06-25 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP4263338B2 (ja) * 2000-05-10 2009-05-13 宏之 新井 プラズマ処理装置
JP3830814B2 (ja) * 2001-12-21 2006-10-11 シャープ株式会社 プラズマプロセス装置およびプラズマ制御方法
US7097782B2 (en) * 2002-11-12 2006-08-29 Micron Technology, Inc. Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly
JP2011150943A (ja) * 2010-01-22 2011-08-04 Tokyo Electron Ltd プラズマ処理装置およびこの装置を用いた基板の処理方法

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