JP6082032B2 - 封止膜を堆積するための方法 - Google Patents

封止膜を堆積するための方法 Download PDF

Info

Publication number
JP6082032B2
JP6082032B2 JP2014557847A JP2014557847A JP6082032B2 JP 6082032 B2 JP6082032 B2 JP 6082032B2 JP 2014557847 A JP2014557847 A JP 2014557847A JP 2014557847 A JP2014557847 A JP 2014557847A JP 6082032 B2 JP6082032 B2 JP 6082032B2
Authority
JP
Japan
Prior art keywords
gas
substrate
sealing film
layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014557847A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015513609A5 (enExample
JP2015513609A (ja
Inventor
ジュリヤン ジェリー チェン
ジュリヤン ジェリー チェン
タエ キュング ウォン
タエ キュング ウォン
ベオム スー パク
ベオム スー パク
ヤング ジン チョイ
ヤング ジン チョイ
スー ヤング チョイ
スー ヤング チョイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2015513609A publication Critical patent/JP2015513609A/ja
Publication of JP2015513609A5 publication Critical patent/JP2015513609A5/ja
Application granted granted Critical
Publication of JP6082032B2 publication Critical patent/JP6082032B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2014557847A 2012-02-15 2013-02-15 封止膜を堆積するための方法 Active JP6082032B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261599364P 2012-02-15 2012-02-15
US61/599,364 2012-02-15
PCT/US2013/026492 WO2013123431A1 (en) 2012-02-15 2013-02-15 Method for depositing an encapsulating film

Publications (3)

Publication Number Publication Date
JP2015513609A JP2015513609A (ja) 2015-05-14
JP2015513609A5 JP2015513609A5 (enExample) 2015-06-25
JP6082032B2 true JP6082032B2 (ja) 2017-02-15

Family

ID=48945906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014557847A Active JP6082032B2 (ja) 2012-02-15 2013-02-15 封止膜を堆積するための方法

Country Status (6)

Country Link
US (1) US8901015B2 (enExample)
JP (1) JP6082032B2 (enExample)
KR (1) KR101539635B1 (enExample)
CN (1) CN104115300B (enExample)
TW (1) TWI506162B (enExample)
WO (1) WO2013123431A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101842586B1 (ko) * 2011-04-05 2018-03-28 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
US9299956B2 (en) * 2012-06-13 2016-03-29 Aixtron, Inc. Method for deposition of high-performance coatings and encapsulated electronic devices
US9810963B2 (en) 2013-03-07 2017-11-07 Switch Materials, Inc. Seal and seal system for a layered device
KR102036327B1 (ko) * 2013-03-27 2019-11-27 삼성디스플레이 주식회사 유기발광장치 및 그 제조방법
US10254617B2 (en) * 2013-12-19 2019-04-09 Switch Materials Inc. Switchable objects and methods of manufacture
WO2015174318A1 (ja) 2014-05-16 2015-11-19 シャープ株式会社 封止フィルム、有機ｅｌ素子、及び有機ｅｌ表示装置
TWI545827B (zh) * 2014-05-23 2016-08-11 群創光電股份有限公司 有機發光二極體顯示面板
KR20160036722A (ko) * 2014-09-25 2016-04-05 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP6584162B2 (ja) * 2015-06-22 2019-10-02 東京エレクトロン株式会社 積層封止膜形成方法および形成装置
US10163859B2 (en) 2015-10-21 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method for chip package
US11751426B2 (en) * 2016-10-18 2023-09-05 Universal Display Corporation Hybrid thin film permeation barrier and method of making the same
US10546748B2 (en) * 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US20190097175A1 (en) * 2017-09-28 2019-03-28 Applied Materials, Inc. Thin film encapsulation scattering layer by pecvd
US10957543B2 (en) 2017-09-29 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Device and method of dielectric layer
JP7407121B2 (ja) * 2018-04-09 2023-12-28 アプライド マテリアルズ インコーポレイテッド パターニング用途のためのカーボンハードマスク及び関連方法
CN118448237A (zh) 2018-05-03 2024-08-06 应用材料公司 用于基座的rf接地配置
US11180847B2 (en) * 2018-12-06 2021-11-23 Applied Materials, Inc. Atomic layer deposition coatings for high temperature ceramic components
CN118251042A (zh) * 2019-04-25 2024-06-25 应用材料公司 具有低折射率和低水蒸气穿透率的湿气阻挡膜
CN114365263A (zh) * 2019-09-10 2022-04-15 应用材料公司 用于显示封装应用的高密度等离子体cvd
CN111029479A (zh) * 2019-11-13 2020-04-17 武汉华星光电半导体显示技术有限公司 显示面板、显示装置以及显示面板的制造方法
KR102882467B1 (ko) * 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
US11538677B2 (en) * 2020-09-01 2022-12-27 Applied Materials, Inc. Systems and methods for depositing high density and high tensile stress films
EP4295404B1 (en) * 2021-02-22 2024-09-18 Applied Materials, Inc. Apparatus, system and method for curing ink printed on a substrate
TWI782762B (zh) * 2021-10-21 2022-11-01 天虹科技股份有限公司 擴散機構及應用該擴散機構的薄膜沉積機台
TWI843325B (zh) * 2022-12-09 2024-05-21 元太科技工業股份有限公司 顯示裝置及其製作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090191342A1 (en) * 1999-10-25 2009-07-30 Vitex Systems, Inc. Method for edge sealing barrier films
US6743524B2 (en) 2002-05-23 2004-06-01 General Electric Company Barrier layer for an article and method of making said barrier layer by expanding thermal plasma
CN1259710C (zh) 2002-09-11 2006-06-14 联华电子股份有限公司 在低介电材料层与内连线间形成阻障层的方法
US7086918B2 (en) * 2002-12-11 2006-08-08 Applied Materials, Inc. Low temperature process for passivation applications
WO2006007313A2 (en) 2004-06-25 2006-01-19 Applied Materials, Inc. Improving water-barrier performance of an encapsulating film
US7220687B2 (en) * 2004-06-25 2007-05-22 Applied Materials, Inc. Method to improve water-barrier performance by changing film surface morphology
JP2007030387A (ja) * 2005-07-28 2007-02-08 Fujifilm Corp バリア性フィルム基板およびそれを用いた有機電界発光素子
US20080006819A1 (en) * 2006-06-19 2008-01-10 3M Innovative Properties Company Moisture barrier coatings for organic light emitting diode devices
US7993700B2 (en) * 2007-03-01 2011-08-09 Applied Materials, Inc. Silicon nitride passivation for a solar cell
JP2009221541A (ja) * 2008-03-17 2009-10-01 Fujifilm Corp 無機層の真空成膜法、バリア性積層体、デバイスおよび光学部材
KR20100087514A (ko) * 2009-01-28 2010-08-05 한국산업기술대학교산학협력단 유기 전기 발광 다이오드의 제조장치 및 제조방법
KR101097321B1 (ko) * 2009-12-14 2011-12-23 삼성모바일디스플레이주식회사 유기 발광 장치 및 이의 제조 방법
KR101106173B1 (ko) * 2010-06-16 2012-01-20 한국기계연구원 유기태양전지용 다층박막봉지 및 이의 제조방법

Also Published As

Publication number Publication date
CN104115300B (zh) 2017-02-22
CN104115300A (zh) 2014-10-22
TW201341580A (zh) 2013-10-16
KR20140129075A (ko) 2014-11-06
KR101539635B1 (ko) 2015-07-27
TWI506162B (zh) 2015-11-01
JP2015513609A (ja) 2015-05-14
WO2013123431A1 (en) 2013-08-22
US20130210199A1 (en) 2013-08-15
US8901015B2 (en) 2014-12-02

Similar Documents

Publication Publication Date Title
JP6082032B2 (ja) 封止膜を堆積するための方法
JP5848862B2 (ja) カプセル化膜の遮水性能の改善
JP5544086B2 (ja) 多層型封止フィルムを形成するための方法、及び装置
US7183197B2 (en) Water-barrier performance of an encapsulating film
US9449809B2 (en) Interface adhesion improvement method
JP5410978B2 (ja) 有機電子デバイスの製造方法および制御プログラムが記憶された記憶媒体
CN104736336A (zh) 气体阻隔性膜的制造方法、气体阻隔性膜和电子设备
KR102333217B1 (ko) 개선된 박막 캡슐화
CN1961095A (zh) 用以沉积低温无机膜层至大型塑胶基板上的方法及其设备
WO2015008708A1 (ja) 電子デバイス

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150414

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150414

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20150504

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20150525

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150623

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150916

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20151021

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20151118

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160308

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160607

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20160808

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160908

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161004

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161114

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161227

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170119

R150 Certificate of patent or registration of utility model

Ref document number: 6082032

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250