JP6080563B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP6080563B2 JP6080563B2 JP2013009852A JP2013009852A JP6080563B2 JP 6080563 B2 JP6080563 B2 JP 6080563B2 JP 2013009852 A JP2013009852 A JP 2013009852A JP 2013009852 A JP2013009852 A JP 2013009852A JP 6080563 B2 JP6080563 B2 JP 6080563B2
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- film
- transistor
- oxide semiconductor
- insulating film
- oxide
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Landscapes
- Liquid Crystal (AREA)
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
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| JP6345544B2 (ja) * | 2013-09-05 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9455349B2 (en) * | 2013-10-22 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor with reduced impurity diffusion |
| JP6444745B2 (ja) | 2015-01-22 | 2018-12-26 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
| US11024725B2 (en) * | 2015-07-24 | 2021-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including metal oxide film |
| WO2017023253A1 (en) * | 2015-07-31 | 2017-02-09 | Intel Corporation | Functional metal oxide based microelectronic devices |
| US9911861B2 (en) * | 2015-08-03 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method of the same, and electronic device |
| CN110226219B (zh) * | 2017-02-07 | 2023-12-08 | 株式会社半导体能源研究所 | 半导体装置以及半导体装置的制造方法 |
| JP7237822B2 (ja) * | 2017-05-19 | 2023-03-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102824388B1 (ko) | 2017-05-19 | 2025-06-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치, 및 반도체 장치의 제작 방법 |
| US20220285362A1 (en) * | 2021-03-05 | 2022-09-08 | Applied Materials, Inc. | Methods and structures for three-dimensional dynamic random-access memory |
| EP4286339B1 (en) * | 2022-05-31 | 2025-01-29 | Imec VZW | Mixed metal oxides |
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| US7378286B2 (en) * | 2004-08-20 | 2008-05-27 | Sharp Laboratories Of America, Inc. | Semiconductive metal oxide thin film ferroelectric memory transistor |
| JP5415001B2 (ja) * | 2007-02-22 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR101496148B1 (ko) * | 2008-05-15 | 2015-02-27 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
| JP5708910B2 (ja) * | 2010-03-30 | 2015-04-30 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
| WO2011132591A1 (en) * | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN102859703B (zh) * | 2010-04-23 | 2015-12-02 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| JP2012015436A (ja) * | 2010-07-05 | 2012-01-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
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