JP6054034B2 - ガリウムで汚染された層の電子ビーム誘起エッチング方法 - Google Patents
ガリウムで汚染された層の電子ビーム誘起エッチング方法 Download PDFInfo
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- JP6054034B2 JP6054034B2 JP2011522428A JP2011522428A JP6054034B2 JP 6054034 B2 JP6054034 B2 JP 6054034B2 JP 2011522428 A JP2011522428 A JP 2011522428A JP 2011522428 A JP2011522428 A JP 2011522428A JP 6054034 B2 JP6054034 B2 JP 6054034B2
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- 238000005530 etching Methods 0.000 title claims description 70
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims description 50
- 229910052733 gallium Inorganic materials 0.000 title claims description 47
- 238000010894 electron beam technology Methods 0.000 title claims description 39
- 238000000034 method Methods 0.000 claims description 62
- 150000002366 halogen compounds Chemical class 0.000 claims description 29
- 239000000460 chlorine Substances 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 17
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 9
- 229910052801 chlorine Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims description 4
- 238000000682 scanning probe acoustic microscopy Methods 0.000 claims description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- 229910018503 SF6 Inorganic materials 0.000 claims description 2
- 238000004630 atomic force microscopy Methods 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 238000000386 microscopy Methods 0.000 claims description 2
- 238000004574 scanning tunneling microscopy Methods 0.000 claims description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 38
- 230000008569 process Effects 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- -1 gallium ions Chemical class 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 150000002258 gallium Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
Claims (8)
- ガリウムで汚染された層(120,220)の電子ビーム誘起エッチング方法であって、
a.エッチングガスとして、少なくとも1種類の第1ハロゲン化合物を、電子ビームが前記層(120,220)に衝突する位置に、供給するステップであって、前記少なくとも1種類の第1ハロゲン化合物が、二フッ化キセノン(XeF2)、及び六フッ化硫黄(SF6)の少なくとも1つを含むステップ、および
b.前記位置において、前記ガリウムを除去する前駆体ガスとして、少なくとも1種類の第2ハロゲン化合物を供給するステップであって、前記少なくとも1種類の第2ハロゲン化合物が、塩素(Cl2)、臭素(Br2)、及びヨウ素(I2)の少なくとも1つを含むステップ、
を含む電子ビーム誘起エッチング方法。 - 請求項1に記載の電子ビーム誘起エッチング方法であって、前記エッチングを行う間、前記第2ハロゲン化合物を継続的に供給することを特徴とする、電子ビーム誘起エッチング方法。
- 請求項2に記載の電子ビーム誘起エッチング方法であって、前記第2ハロゲン化合物を0.1標準立方センチメートル/分のガス流量で供給することを特徴とする、電子ビーム誘起エッチング方法。
- 請求項1〜3のいずれか一項記載の電子ビーム誘起エッチング方法であって、前記エッチングを行う間、前記第1ハロゲン化合物を経時変化させて供給することを特徴とする、電子ビーム誘起エッチング方法。
- 請求項4に記載の電子ビーム誘起エッチング方法であって、前記第1ハロゲン化合物を、30秒のクロックレートでチョップした1:5のデューティサイクルで供給することを特徴とする、電子ビーム誘起エッチング方法。
- 請求項1〜5のいずれか一項に記載の電子ビーム誘起エッチング方法であって、ガリウムで汚染された少なくとも1つの層(220)を含む多層系(200)にわたりビア(300)をエッチングする際、前記ガリウムで汚染された少なくとも1つの層(220)をエッチングするときの前記第2ハロゲン化合物のガス流量は、ガリウムで汚染されていない層(210,230,240,250,260,270,280)をエッチングするときよりも多いことを特徴とする、電子ビーム誘起エッチング方法。
- 請求項1〜6のいずれか一項に記載の電子ビーム誘起エッチング方法であって、コールドトラップ(60)および/または紫外線ランプ(70)を用いて、真空チャンバ(10)内の水蒸気分圧を減少させることを特徴とする、電子ビーム誘起エッチング方法。
- 請求項1〜7のいずれか一項に記載の電子ビーム誘起エッチング方法であって、電子ビーム装置(30)の前記電子ビームを用いて、電子ビーム顕微鏡法、または、並行して、オージェ電子分光法(AES)、X線光電子分光法(XPS)、走査トンネル顕微鏡法、および/または走査型力顕微鏡法により、エッチング対象層(110,120,130,140,150,160,210,220,230,240,250,260,270,280)の表面および/または層(110,120,130,140,150,160,210,220,230,240,250,260,270,280)のエッチングした表面を検査することを特徴とする、電子ビーム誘起エッチング方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008037951.4 | 2008-08-14 | ||
DE102008037951.4A DE102008037951B4 (de) | 2008-08-14 | 2008-08-14 | Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten |
PCT/EP2009/005823 WO2010017963A1 (de) | 2008-08-14 | 2009-08-11 | Verfahren zum elektronenstrahlinduzierten ätzen von mit gallium verunreinigten schichten |
Related Child Applications (1)
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JP2016032382A Division JP2016146491A (ja) | 2008-08-14 | 2016-02-23 | ガリウムで汚染された層の電子ビーム誘起エッチング方法 |
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JP2011530821A JP2011530821A (ja) | 2011-12-22 |
JP6054034B2 true JP6054034B2 (ja) | 2016-12-27 |
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JP2011522428A Active JP6054034B2 (ja) | 2008-08-14 | 2009-08-11 | ガリウムで汚染された層の電子ビーム誘起エッチング方法 |
JP2016032382A Pending JP2016146491A (ja) | 2008-08-14 | 2016-02-23 | ガリウムで汚染された層の電子ビーム誘起エッチング方法 |
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Country Status (7)
Country | Link |
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US (1) | US8632687B2 (ja) |
EP (1) | EP2313913B1 (ja) |
JP (2) | JP6054034B2 (ja) |
KR (1) | KR101584835B1 (ja) |
DE (1) | DE102008037951B4 (ja) |
TW (1) | TWI501312B (ja) |
WO (1) | WO2010017963A1 (ja) |
Families Citing this family (11)
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DE102008037943B4 (de) | 2008-08-14 | 2018-04-26 | Nawotec Gmbh | Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens |
DE102012001267A1 (de) | 2012-01-23 | 2013-07-25 | Carl Zeiss Microscopy Gmbh | Partikelstrahlsystem mit Zuführung von Prozessgas zu einem Bearbeitungsort |
US9123506B2 (en) | 2013-06-10 | 2015-09-01 | Fei Company | Electron beam-induced etching |
US9799490B2 (en) * | 2015-03-31 | 2017-10-24 | Fei Company | Charged particle beam processing using process gas and cooled surface |
US10103008B2 (en) * | 2016-01-12 | 2018-10-16 | Fei Company | Charged particle beam-induced etching |
KR102292077B1 (ko) | 2016-12-09 | 2021-08-23 | 에이에스엠 아이피 홀딩 비.브이. | 열적 원자층 식각 공정 |
US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
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JP2021019201A (ja) | 2019-07-18 | 2021-02-15 | エーエスエム アイピー ホールディング ビー.ブイ. | 半導体処理システム用シャワーヘッドデバイス |
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KR20110045049A (ko) | 2011-05-03 |
EP2313913B1 (de) | 2013-01-09 |
TW201013777A (en) | 2010-04-01 |
KR101584835B1 (ko) | 2016-01-12 |
US20110183523A1 (en) | 2011-07-28 |
JP2016146491A (ja) | 2016-08-12 |
JP2011530821A (ja) | 2011-12-22 |
DE102008037951A1 (de) | 2010-02-25 |
EP2313913A1 (de) | 2011-04-27 |
WO2010017963A1 (de) | 2010-02-18 |
DE102008037951B4 (de) | 2018-02-15 |
TWI501312B (zh) | 2015-09-21 |
US8632687B2 (en) | 2014-01-21 |
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