JP6041304B2 - Ｅｕｖマイクロリソグラフィ用の照明光学系、この種の照明光学系用のｅｕｖ減衰器、及びこの種の照明光学系を有する照明系及び投影露光装置 - Google Patents

Ｅｕｖマイクロリソグラフィ用の照明光学系、この種の照明光学系用のｅｕｖ減衰器、及びこの種の照明光学系を有する照明系及び投影露光装置 Download PDF

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JP6041304B2
JP6041304B2 JP2012501137A JP2012501137A JP6041304B2 JP 6041304 B2 JP6041304 B2 JP 6041304B2 JP 2012501137 A JP2012501137 A JP 2012501137A JP 2012501137 A JP2012501137 A JP 2012501137A JP 6041304 B2 JP6041304 B2 JP 6041304B2
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Japan
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attenuator
euv
illumination
optical system
facet
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JP2012501137A
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JP2012522358A5 (enExample
JP2012522358A (ja
Inventor
ニコラス シュミット
ニコラス シュミット
ヨアキム ハーティエス
ヨアキム ハーティエス
ウルリッヒ ビンゲル
ウルリッヒ ビンゲル
ボアツ プニニ
ボアツ プニニ
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Microscoopes, Condenser (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
JP2012501137A 2009-03-27 2009-03-27 Ｅｕｖマイクロリソグラフィ用の照明光学系、この種の照明光学系用のｅｕｖ減衰器、及びこの種の照明光学系を有する照明系及び投影露光装置 Expired - Fee Related JP6041304B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2009/002247 WO2010108516A1 (en) 2009-03-27 2009-03-27 Illumination optical system for euv microlithography and euv attenuator for an illumination optical system of this kind, illumination system and projection exposure installation having an illumination optical system of this kind

Publications (3)

Publication Number Publication Date
JP2012522358A JP2012522358A (ja) 2012-09-20
JP2012522358A5 JP2012522358A5 (enExample) 2016-09-15
JP6041304B2 true JP6041304B2 (ja) 2016-12-07

Family

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Family Applications (1)

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JP2012501137A Expired - Fee Related JP6041304B2 (ja) 2009-03-27 2009-03-27 Ｅｕｖマイクロリソグラフィ用の照明光学系、この種の照明光学系用のｅｕｖ減衰器、及びこの種の照明光学系を有する照明系及び投影露光装置

Country Status (4)

Country Link
US (1) US9482959B2 (enExample)
JP (1) JP6041304B2 (enExample)
CN (1) CN102365587B (enExample)
WO (1) WO2010108516A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012207377A1 (de) * 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
DE102012210174A1 (de) * 2012-06-18 2013-06-06 Carl Zeiss Smt Gmbh Optisches Bauelement
KR102219069B1 (ko) 2013-06-18 2021-02-23 에이에스엠엘 네델란즈 비.브이. 리소그래피 방법 및 시스템
DE102013218131A1 (de) * 2013-09-11 2015-03-12 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie Beleuchtungssystem für die EUV-Projektionslithographie
DE102013218749A1 (de) * 2013-09-18 2015-03-19 Carl Zeiss Smt Gmbh Beleuchtungssystem sowie Beleuchtungsoptik für die EUV-Projektionslithografie
US9575412B2 (en) * 2014-03-31 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing pole imbalance by adjusting exposure intensity
DE102017211443A1 (de) 2017-07-05 2019-01-10 Carl Zeiss Smt Gmbh Metrologiesystem mit einer EUV-Optik
DE102019202868A1 (de) * 2019-03-04 2020-09-10 Carl Zeiss Smt Gmbh Aktuatoreinrichtung und Verfahren zur Ausrichtung eines optischen Elements, optische Baugruppe sowie Projektionsbelichtungsanlage
DE102019206868A1 (de) 2019-05-13 2019-07-04 Carl Zeiss Smt Gmbh Feldfacettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage
DE102019206867A1 (de) 2019-05-13 2019-07-11 Carl Zeiss Smt Gmbh Optisches Element für eine Projektionsbelichtungsanlage
CN118151351A (zh) * 2024-03-25 2024-06-07 上海镭望光学科技有限公司 一种照明系统远心度补偿方法及补偿装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
DE19955984A1 (de) 1999-11-20 2001-05-23 Zeiss Carl Optische Abbildungsvorrichtung, insbesondere Objektiv mit wenigstens einer Systemblende
US7333178B2 (en) * 2002-03-18 2008-02-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121762A1 (en) * 2002-03-18 2006-05-26 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
JP3809817B2 (ja) 2002-12-19 2006-08-16 株式会社村田製作所 誘電体フィルタ、誘電体デュプレクサおよび通信装置
AU2003296167A1 (en) * 2002-12-26 2004-08-23 Nikon Corporation Illumination optical system, illuminating device, projection exposure apparatus and exposure method
US7636149B2 (en) * 2003-05-09 2009-12-22 Nikon Corporation Optical systems that correct optical irregularities, and projection-exposure systems and methods comprising same
WO2005015314A2 (en) 2003-07-30 2005-02-17 Carl Zeiss Smt Ag An illumination system for microlithography
US7023524B2 (en) 2003-12-18 2006-04-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006128321A (ja) * 2004-10-27 2006-05-18 Nikon Corp 照明光学系、露光装置及びマイクロデバイスの製造方法
WO2006136353A1 (en) * 2005-06-21 2006-12-28 Carl Zeiss Smt Ag A double-facetted illumination system with attenuator elements on the pupil facet mirror
WO2007093433A1 (de) * 2006-02-17 2007-08-23 Carl Zeiss Smt Ag Beleuchtungssystem für die mikro-lithographie, projektionsbelichtungsanlage mit einem derartigen beleuchtungssystem
WO2007138805A1 (ja) 2006-05-25 2007-12-06 Nikon Corporation 照明光学装置、露光装置、およびデバイス製造方法
US7990520B2 (en) * 2006-12-18 2011-08-02 Carl Zeiss Smt Gmbh Microlithography illumination systems, components and methods
DE102007061194A1 (de) * 2006-12-18 2008-06-19 Carl Zeiss Smt Ag Beleuchtungssystem für die EUV-Mikro-Lithografie, Projektionsbelichtungsanlage für die EUV-Mikro-Lithografie, Verfahren zur Korrektur der Elliptizität und/oder der Uniformität innerhalb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie mit dem Herstellungsverfahren hergestelltes Bauteil
JP4962203B2 (ja) 2007-08-08 2012-06-27 株式会社ニコン Ｅｕｖ露光装置、露光方法およびデバイス製造方法

Also Published As

Publication number Publication date
US9482959B2 (en) 2016-11-01
JP2012522358A (ja) 2012-09-20
CN102365587A (zh) 2012-02-29
WO2010108516A1 (en) 2010-09-30
US20120069313A1 (en) 2012-03-22
CN102365587B (zh) 2015-07-22

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