JP6023060B2 - 光散乱特徴を有する光源、光散乱特徴を有する光源を備える装置及び/又はこれらの製造方法 - Google Patents
光散乱特徴を有する光源、光散乱特徴を有する光源を備える装置及び/又はこれらの製造方法 Download PDFInfo
- Publication number
- JP6023060B2 JP6023060B2 JP2013532785A JP2013532785A JP6023060B2 JP 6023060 B2 JP6023060 B2 JP 6023060B2 JP 2013532785 A JP2013532785 A JP 2013532785A JP 2013532785 A JP2013532785 A JP 2013532785A JP 6023060 B2 JP6023060 B2 JP 6023060B2
- Authority
- JP
- Japan
- Prior art keywords
- led
- light
- substrate
- layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 238000000149 argon plasma sintering Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 104
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 83
- 238000000034 method Methods 0.000 description 50
- 239000011521 glass Substances 0.000 description 45
- 239000000463 material Substances 0.000 description 34
- 239000000243 solution Substances 0.000 description 30
- 238000000576 coating method Methods 0.000 description 27
- 239000010936 titanium Substances 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 19
- 229920000642 polymer Polymers 0.000 description 18
- 229910052719 titanium Inorganic materials 0.000 description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 16
- 239000002243 precursor Substances 0.000 description 14
- 239000013522 chelant Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 239000011147 inorganic material Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000004049 embossing Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- -1 titanium alkoxide Chemical class 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 4
- 239000004408 titanium dioxide Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000009877 rendering Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical group N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012050 conventional carrier Substances 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 210000002837 heart atrium Anatomy 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000005309 stochastic process Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- JUWGUJSXVOBPHP-UHFFFAOYSA-B titanium(4+);tetraphosphate Chemical compound [Ti+4].[Ti+4].[Ti+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O JUWGUJSXVOBPHP-UHFFFAOYSA-B 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
前記及び他の特徴及び利点は、図面と併せて以下の例示的な実施態様例の詳細な説明を参照することで、更に好ましくかつ更に完全に理解することができる。
Claims (4)
- LED装置の製造方法であって、
基板を供給する工程と、
前記基板上に複数のLEDを形成する工程と、
前記LED上に及び/又は1層以上の前記LEDの層内にランダムなパターンを作製する工程と、
を含み、
前記ランダムなパターンがLEDによって発せられる光に、1mAの注入電流に対する総発光が0.2mW以上となるように光散乱効果を与え、
前記ランダムなパターンを作製する工程が、
フラクタルパターンを発生させる工程であって、前記フラクタルパターンがランダムなフラクタルパターンであるか又はそこにランダム性が導入されたものである工程と、
前記発生したフラクタルパターンを1層以上の前記LEDの層へ移動させる移動工程と、を含み、
前記フラクタルパターンがテンプレート内で発生し、前記テンプレートを前記移動工程中に1層以上の前記LEDの層へ移動し、
前記テンプレートを移動した時点で1層以上の前記LEDの層内の前記フラクタルパターンをエッチングする工程を更に含み、前記テンプレートがエッチング後に除去される
LED装置の製造方法。 - フラクタルパターンを発生させる工程であって、前記フラクタルパターンが、ランダムなフラクタルパターンであるか、又はフラクタルパターンにランダム性が導入されたものである工程と、
前記発生したフラクタルパターンを用いて1層以上の前記LEDの層をフォトリソグラフィーパターンニングする工程と、
を更に含む請求項1に記載のLED装置の製造方法。 - 前記LED上に前記ランダムなパターンを作製する前記工程が、最外表面から10〜300nmエッチングすることを含む、先行する請求項1又は2に記載のLED装置の製造方法。
- 前記LED上に前記ランダムなパターンを作製する前記工程が、その半導体層を10〜300nmエッチング除去することを含む、請求項1から3のいずれか1項に記載のLED装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/923,834 US9293653B2 (en) | 2010-10-08 | 2010-10-08 | Light source with light scattering features, device including light source with light scattering features, and/or methods of making the same |
US12/923,834 | 2010-10-08 | ||
PCT/US2011/001608 WO2012047254A1 (en) | 2010-10-08 | 2011-09-16 | Light source with light scattering features, device including light source with light scattering features, and/or methods of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013540335A JP2013540335A (ja) | 2013-10-31 |
JP6023060B2 true JP6023060B2 (ja) | 2016-11-09 |
Family
ID=44721055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013532785A Expired - Fee Related JP6023060B2 (ja) | 2010-10-08 | 2011-09-16 | 光散乱特徴を有する光源、光散乱特徴を有する光源を備える装置及び/又はこれらの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9293653B2 (ja) |
EP (1) | EP2625723B1 (ja) |
JP (1) | JP6023060B2 (ja) |
KR (1) | KR20140030096A (ja) |
CN (1) | CN103299438B (ja) |
TW (1) | TWI581457B (ja) |
WO (1) | WO2012047254A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101828152B1 (ko) * | 2016-05-27 | 2018-02-12 | 연세대학교 산학협력단 | 광학 기판 구조체, 이의 제조 방법, 및 이를 포함하는 광학 소자 패키지 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2967682B1 (fr) * | 2010-11-23 | 2012-12-21 | Michelin Soc Tech | Composition contenant un elastomere dienique particulier et un noir de carbone de surface specifique particuliere |
US10819955B2 (en) * | 2011-04-01 | 2020-10-27 | Latecoere | Aircraft provided with a surveillance system |
WO2013134432A1 (en) * | 2012-03-06 | 2013-09-12 | Soraa, Inc. | Light emitting diodes with low refractive index material layers to reduce light guiding effects |
US10145026B2 (en) | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
US8608525B1 (en) | 2012-06-05 | 2013-12-17 | Guardian Industries Corp. | Coated articles and/or devices with optical out-coupling layer stacks (OCLS), and/or methods of making the same |
CN103268883A (zh) * | 2012-06-29 | 2013-08-28 | 上海天马微电子有限公司 | Oled显示器及其制造方法 |
JP2014022508A (ja) * | 2012-07-17 | 2014-02-03 | Konica Minolta Inc | Led装置及びその製造方法 |
US9651231B2 (en) | 2012-10-04 | 2017-05-16 | Guardian Industries Corp. | Laminated LED array and/or products including the same |
US9696012B2 (en) | 2012-10-04 | 2017-07-04 | Guardian Industries Corp. | Embedded LED assembly with optional beam steering optical element, and associated products, and/or methods |
US9956752B2 (en) * | 2012-10-04 | 2018-05-01 | Guardian Glass, LLC | Methods of making laminated LED array and/or products including the same |
US20140151721A1 (en) * | 2012-11-30 | 2014-06-05 | Corning Incorporated | Phase transition cooling in led lighting devices |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US9263701B2 (en) | 2013-03-14 | 2016-02-16 | Guardian Industries Corp. | Coated article and/or device with optical out-coupling layer stack (OCLS) including vacuum deposited index match layer over scattering matrix, and/or associated methods |
EP3655718A4 (en) | 2017-07-17 | 2021-03-17 | Alexander Poltorak | SYSTEM AND PROCESS FOR MULTI-FRACTAL HEAT SINK |
US20220155504A1 (en) * | 2020-11-19 | 2022-05-19 | Visera Technologies Company Limited | Optical structure |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4918487A (en) | 1989-01-23 | 1990-04-17 | Coulter Systems Corporation | Toner applicator for electrophotographic microimagery |
US5657607A (en) | 1989-08-23 | 1997-08-19 | University Of Sydney | Thermally insulating glass panel and method of construction |
US5309001A (en) | 1991-11-25 | 1994-05-03 | Sharp Kabushiki Kaisha | Light-emitting diode having a surface electrode of a tree-like form |
SG44580A1 (en) | 1992-01-31 | 1997-12-19 | Univ Sydney | Improvements to thermally insulating glass panels |
AU673610B2 (en) | 1993-06-30 | 1996-11-14 | University Of Sydney, The | Methods of construction of evacuated glazing |
US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
KR20010012719A (ko) | 1998-03-20 | 2001-02-26 | 마쓰무라 미노루 | 유리패널 |
KR100700993B1 (ko) | 1999-12-03 | 2007-03-30 | 크리, 인코포레이티드 | 향상된 광 적출 구조체를 갖는 발광 다이오드 및 그 제조 방법 |
WO2002052191A1 (de) | 2000-12-22 | 2002-07-04 | Thomas Emde | Fensterelement |
US7419912B2 (en) * | 2004-04-01 | 2008-09-02 | Cree, Inc. | Laser patterning of light emitting devices |
DE102004039883B3 (de) | 2004-08-17 | 2006-06-14 | Schott Ag | Transparentes Element, insbesondere Verbundglaselement, und Verfahren zum Tausch eines Verbrauchers darin |
US7291864B2 (en) | 2005-02-28 | 2007-11-06 | The Regents Of The University Of California | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate |
JP2009500872A (ja) | 2005-07-11 | 2009-01-08 | ルミネイション リミテッド ライアビリティ カンパニー | 光抽出が改善したレーザリフトオフled |
JP2007324411A (ja) * | 2006-06-01 | 2007-12-13 | Toshiba Corp | 半導体発光素子及びその製造方法、並びに半導体発光素子を用いた照明装置 |
US20080008964A1 (en) | 2006-07-05 | 2008-01-10 | Chia-Hua Chan | Light emitting diode and method of fabricating a nano/micro structure |
CN100568555C (zh) | 2006-09-05 | 2009-12-09 | 武汉迪源光电科技有限公司 | 粗化电极用于高亮度正装led芯片和垂直led芯片 |
JP5284036B2 (ja) * | 2007-11-14 | 2013-09-11 | キヤノン株式会社 | 発光装置 |
US8460493B2 (en) | 2007-12-14 | 2013-06-11 | Guardian Industries Corp. | Evacuation and port sealing techniques for vacuum insulating glass units, and/or vacuum oven for accomplishing the same |
US8137494B2 (en) | 2007-12-14 | 2012-03-20 | Guardian Industries Corp. | Vacuum insulating glass unit with large pump-out port, and/or method of making the same |
US8500933B2 (en) | 2007-12-14 | 2013-08-06 | Guardian Industries Corp. | Localized heating of edge seals for a vacuum insulating glass unit, and/or unitized oven for accomplishing the same |
US8512829B2 (en) | 2007-12-14 | 2013-08-20 | Guardian Industries Corp. | Metal-inclusive edge seal for vacuum insulating glass unit, and/or method of making the same |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US8506738B2 (en) | 2007-12-17 | 2013-08-13 | Guardian Industries Corp. | Localized heating via an infrared heat source array of edge seals for a vacuum insulating glass unit, and/or unitized oven with infrared heat source array for accomplishing the same |
US7939350B2 (en) | 2008-01-03 | 2011-05-10 | E. I. Du Pont De Nemours And Company | Method for encapsulating a substrate and method for fabricating a light emitting diode device |
CN101487974B (zh) * | 2008-01-17 | 2013-06-12 | 晶元光电股份有限公司 | 一种纳米级印模结构及其在发光元件上的应用 |
JP5394717B2 (ja) * | 2008-12-15 | 2014-01-22 | 日本オクラロ株式会社 | 窒化物半導体光素子の製造方法 |
GB0902569D0 (en) | 2009-02-16 | 2009-04-01 | Univ Southampton | An optical device |
KR101134732B1 (ko) * | 2009-02-17 | 2012-04-19 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
-
2010
- 2010-10-08 US US12/923,834 patent/US9293653B2/en active Active
-
2011
- 2011-09-16 EP EP11764006.0A patent/EP2625723B1/en not_active Not-in-force
- 2011-09-16 WO PCT/US2011/001608 patent/WO2012047254A1/en active Application Filing
- 2011-09-16 KR KR1020137010828A patent/KR20140030096A/ko active IP Right Grant
- 2011-09-16 JP JP2013532785A patent/JP6023060B2/ja not_active Expired - Fee Related
- 2011-09-16 CN CN201180058471.2A patent/CN103299438B/zh not_active Expired - Fee Related
- 2011-09-23 TW TW100134353A patent/TWI581457B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101828152B1 (ko) * | 2016-05-27 | 2018-02-12 | 연세대학교 산학협력단 | 광학 기판 구조체, 이의 제조 방법, 및 이를 포함하는 광학 소자 패키지 |
Also Published As
Publication number | Publication date |
---|---|
US20120086022A1 (en) | 2012-04-12 |
US9293653B2 (en) | 2016-03-22 |
EP2625723B1 (en) | 2017-04-26 |
TWI581457B (zh) | 2017-05-01 |
WO2012047254A1 (en) | 2012-04-12 |
CN103299438B (zh) | 2017-08-11 |
JP2013540335A (ja) | 2013-10-31 |
KR20140030096A (ko) | 2014-03-11 |
TW201232812A (en) | 2012-08-01 |
CN103299438A (zh) | 2013-09-11 |
EP2625723A1 (en) | 2013-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6030559B2 (ja) | 光源を備える絶縁ガラス(ig)ユニット若しくは真空絶縁ガラス(vig)ユニット及び/又はその製造方法 | |
JP6087823B2 (ja) | 光源、光源を備える装置及び/又はこれらの製造方法 | |
JP6023060B2 (ja) | 光散乱特徴を有する光源、光散乱特徴を有する光源を備える装置及び/又はこれらの製造方法 | |
JP5959119B2 (ja) | ハイブリッドコーティングを有する光源、ハイブリッドコーティングを有する光源を備える装置及び/又はこれらの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140821 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150623 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150624 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150917 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151020 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160315 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160714 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20160722 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160913 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161006 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6023060 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
LAPS | Cancellation because of no payment of annual fees |