JP6012602B2 - 半導体加工シート用基材フィルム、半導体加工シート及び半導体装置の製造方法 - Google Patents
半導体加工シート用基材フィルム、半導体加工シート及び半導体装置の製造方法 Download PDFInfo
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- JP6012602B2 JP6012602B2 JP2013525608A JP2013525608A JP6012602B2 JP 6012602 B2 JP6012602 B2 JP 6012602B2 JP 2013525608 A JP2013525608 A JP 2013525608A JP 2013525608 A JP2013525608 A JP 2013525608A JP 6012602 B2 JP6012602 B2 JP 6012602B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Description
〔第1の実施形態〕
図1は、本発明の第1の実施形態に係る半導体加工シートの断面図の一例である。図1に示すように、本実施形態に係る半導体加工シート1は、基材フィルム2と、基材フィルム2の片面(図1では上面)に積層された接着剤層3とを備えている。なお、半導体加工シート1の使用前には、接着剤層3を保護するために、接着剤層3の露出面(図1では上面)に剥離可能な剥離シートを積層しておくことが好ましい。この半導体加工シート1は、テープ状、ラベル状など、あらゆる形状をとりうる。
図2は、本発明の第2の実施形態に係る半導体加工シート10の断面図である。
オレフィン系樹脂Dとして、超低密度ポリエチレン(住友化学社製,エクセレンEUL731,密度:0.895g/cm3,融解ピークにおける熱流量:1.4W/g,融解熱量:69.5J/g)10質量部と、オレフィン系樹脂Eとして、低密度ポリエチレン(住友化学社製,スミカセンL705,密度0.918g/cm3,融解ピークにおける熱流量:5.5W/g,融解熱量ΔH:126.0J/g)90質量部とを、二軸混練機(東洋精機製作所社製,ラボプラストミル)にて溶融混練し、樹脂層(A)用の押出用原材料を得た。
[アクリル重合体(a)]
・n−ブチルアクリレートを主体とするアクリル系共重合体(日本合成化学工業社製,製品名「コーポニールN2359−6」,Mw:約80万,固形分濃度34質量%):14質量%
[エポキシ系樹脂(b)]
・ビスフェノールA型エポキシ樹脂(三菱化学社製,製品名「JER828」,エポキシ当量189g/eq):18質量%
・DCPD型エポキシ樹脂(大日本インキ化学社製,製品名「EPICLON HP−7200HH」,エポキシ当量265〜300g/eq,軟化点75〜90℃):55質量%
[硬化剤(c)]
・ジシアンジアミド(旭電化社製,製品名「アデカハードナー3636AS」:1.6質量%
[硬化促進剤]
・2−フェニル−4,5−ジ(ヒドロキシメチル)イミダゾール(四国化成工業社製,製品名「キュアゾール2PHZ」):1.5質量%
[シランカップリング剤]
・γ−グリシドキシプロピルトリメトキシシランを付加させたシリケート化合物(三菱化学社製,製品名「MKCシリケートMSEP2」):0.5質量%
[エネルギー線重合性化合物]
・ジシクロペンタジエンジメトキシジアクリレート(日本化薬社製,製品名「カラヤッドR684」):9.1質量%
[光重合開始剤]
・α−ヒドロキシシクロヘキシルフェニルケトン(チバ・スペシャルティ・ケミカルズ社製,製品名「イルガキュア184」):0.3質量%
実施例1において、樹脂層(A)の押出用原材料中のオレフィン系樹脂Dの配合量を30質量部、オレフィン系樹脂Eの配合量を70質量部に変更する以外は、実施例1と同様にして半導体加工シートを製造した。
実施例1において、樹脂層(A)の押出用原材料中のオレフィン系樹脂Dの配合量を50質量部、オレフィン系樹脂Eの配合量を50質量部に変更する以外は、実施例1と同様にして半導体加工シートを製造した。
実施例3において、押出用原材料中のオレフィン系樹脂Dを、超低密度ポリエチレン(住友化学社製,エクセレンVL−200,密度0.900g/cm3,融解ピークにおける熱流量:2.0W/g,融解熱量ΔH79.1J/g)に変更する以外は、実施例3と同様にして半導体加工シートを製造した。
実施例2において、樹脂層(B)の押出用原材料を、エチレン−メタクリル酸共重体(三井デュポンポリケミカル社製,ニュクレルAN4225C,メタクリル酸含有量:5.0質量%)に変更する以外は、実施例2と同様にして半導体加工シートを製造した。
実施例2において、樹脂層(B)の押出用原材料を、エチレン−メタクリル酸共重体(三井デュポンポリケミカル社製,ニュクレルN1207C,メタクリル酸含有量:12.0質量%)に変更する以外は、実施例2と同様にして半導体加工シートを製造した。
実施例1において、樹脂層(A)の押出用原材料中のオレフィン系樹脂Dの配合量を60質量部、オレフィン系樹脂Eの配合量を40質量部に変更する以外は、実施例1と同様にして半導体加工シートを製造した。
実施例2において、樹脂層(B)の押出用原材料を、エチレン−メタクリル酸共重体(三井デュポンポリケミカル社製,ニュクレルAN4214C,メタクリル酸含有量:4.0質量%)に変更する以外は、実施例2と同様にして半導体加工シートを製造した。
実施例2において、樹脂層(B)の押出用原材料を、エチレン−メタクリル酸共重体(三井デュポンポリケミカル社製,ニュクレルN1525,メタクリル酸含有量:15.0質量%)に変更する以外は、実施例2と同様にして半導体加工シートを製造した。
実施例2において、樹脂層(B)を押し出さず、樹脂層(A)単層のみで厚み100μmの基材フィルムを形成し、次いで、この基材フィルム上に実施例1と同様にして接着剤層を形成し、半導体加工シートを製造した。
実施例1において、樹脂層(A)の押出用原材料中のオレフィン系樹脂Dの配合量を0質量部、オレフィン系樹脂Eの配合量を100質量部に変更する以外は、実施例1と同様にして半導体加工シートを製造した。
実施例1において、樹脂層(A)の押出用原材料中のオレフィン系樹脂Dの配合量を5質量部、オレフィン系樹脂Eの配合量を95質量部に変更する以外は、実施例1と同様にして半導体加工シートを製造した。
実施例2において、オレフィン系樹脂Dとして、超低密度ポリエチレン(東ソー社製,ルミタック43−1,密度0.905g/cm3,融解ピークにおける熱流量:2.4W/g,融解熱量ΔH88.9J/g)を使用する以外は、実施例2と同様にして半導体加工シートを製造した。
実施例2において、オレフィン系樹脂Dとして、超低密度ポリエチレン(プライムポリマー社製,エボリューSP90100,密度0.890g/cm3,融解ピークにおける熱流量:2.8W/g,融解熱量ΔH87.8J/g)を使用する以外は、実施例2と同様にして半導体加工シートを製造した。
比較例1において、樹脂層(B)の押出用原材料を、エチレン−メタクリル酸共重体(三井デュポンポリケミカル社製,ニュクレルN4214C,メタクリル酸含有量:4.0質量%)に変更する以外は、比較例1と同様にして半導体加工シートを製造した。
実施例及び比較例で製造した半導体加工シートを25mm×250mmに裁断し、試験片を作製した。この試験片を#2000シリコンウェハ(200mm径,厚さ350μm)の研削面に貼り付けて、2kgのゴムロールを1往復することにより両者を圧着した。この状態で23℃、50%RHの条件下に20分以上放置した後、万能型引張試験機(オリエンテック社製,テンシロン)を使用して300mm/minの速度で180°剥離を行い、接着剤層と基材フィルム間の剥離力を測定し、その値を(初期値:f1(mN/25mm))とした。
R=(f2−f1)×100/f1
実施例1に示す二軸混練機(東洋精機製作所社製,ラボプラストミル)にて溶融混練した樹脂層(A)用の押出用原材料について、軟化温度の測定を行った。具体的には、高化式フローテスター(株式会社島津製作所社製,型番:CFT−100D)を用いて、穴形状がφ2.0mm、長さ5.0mmのダイを使用し、サンプル量4g、荷重9.81N、昇温速度10℃/分の条件で測定を行い、ストロークに変化が生じ始めた温度を軟化温度とした。結果を表1に示す。
実施例及び比較例で製造した半導体加工シートの接着剤層に6インチウェハを貼付した後、当該半導体加工シートをフラットフレームに装着し、20μm厚のダイヤモンドブレードにより、ウェハを5mm角のチップにフルカットした。次に、エキスパンディング冶具(NECマシナリー社製,ダイボンダーCSP−100VX)を用いて、半導体加工シートを速度300mm/分で10mm引き落とした。このときのウェハ全体の拡張状態を目視で確認した。その結果、問題なく拡張でき、チップが全体的に均一に並んでいる場合は○、拡張はできるが、チップの並びに不均一な部分がある場合は△、拡張時に半導体加工シートが破断した場合には×と判定した。結果を表1に示す。
実施例及び比較例で製造した基材フィルムを、3インチ径、330mm幅のプラスチック管に100m巻き取り、評価サンプルを作製した。このサンプルを40℃雰囲気下で1週間保管した後、再度巻き返しを行った際の状態を、下記の基準で評価した。結果を表1に示す。
○:抵抗なく巻き出すことができる。
△:巻き出すことができるが、部分的にブロッキングが生じており、シート表面に跡が残る。
×:部分的又は全体的にブロッキングが生じ、巻き出すことができない。
2,20…基材フィルム
3…接着剤層
Claims (13)
- 単層又は複層の樹脂層からなる半導体加工シート用基材フィルムであって、
前記樹脂層の少なくとも1層が、樹脂密度が0.870〜0.900g/cm3、融解ピークにおける熱流量が2.5W/g以下のオレフィン系樹脂を10〜70質量%含有する樹脂組成物からなる樹脂層(A)であり、
基材フィルムと、前記基材フィルムの片面に積層された接着剤層とを備える半導体加工用シートの、前記基材フィルムに用いられる
ことを特徴とする半導体加工シート用基材フィルム。 - 前記樹脂層(A)と、
前記樹脂層(A)を構成する前記樹脂組成物以外の材料からなる樹脂層(B)と
の2層からなることを特徴とする請求項1に記載の半導体加工シート用基材フィルム。 - 前記オレフィン系樹脂の融解熱量ΔHが、85.0J/g以下であることを特徴とする請求項1又は2に記載の半導体加工シート用基材フィルム。
- 前記樹脂層(A)を構成する前記樹脂組成物は、前記オレフィン系樹脂と、前記オレフィン系樹脂以外のオレフィン系樹脂とからなることを特徴とする請求項1〜3のいずれか一項に記載の半導体加工シート用基材フィルム。
- 前記樹脂層(A)の軟化温度は、90〜120℃であることを特徴とする請求項1〜4のいずれか一項に記載の半導体加工シート用基材フィルム。
- 前記樹脂層(B)は、エチレン−(メタ)アクリル酸共重体を主成分とする樹脂組成物からなることを特徴とする請求項2〜5のいずれか一項に記載の半導体加工シート用基材フィルム。
- 前記樹脂層(B)のエチレン−(メタ)アクリル酸共重体における構成成分としての(メタ)アクリル酸の含有量は、5〜20質量%であることを特徴とする請求項6に記載の半導体加工シート用基材フィルム。
- 前記接着剤層は、アクリル重合体、エポキシ樹脂及び硬化剤を含有する接着剤組成物から構成されることを特徴とする請求項1〜7のいずれか一項に記載の半導体加工シート用基材フィルム。
- 請求項1〜8のいずれか一項に記載の半導体加工シート用基材フィルムと、
前記半導体加工シート用基材フィルムの片面に積層された接着剤層と
を備えた半導体加工シート。 - 前記接着剤層は、アクリル重合体、エポキシ樹脂及び硬化剤を含有する接着剤組成物から構成されることを特徴とする請求項9に記載の半導体加工シート。
- 前記半導体加工シート用基材フィルムにおける前記樹脂層(A)は、前記接着剤層と接していることを特徴とする請求項9又は10に記載の半導体加工シート。
- 基材フィルムと、前記基材フィルムの片面に積層された接着剤層とを備えた半導体加工シートの前記接着剤層を介して、前記半導体加工シートを半導体ウェハに貼付した後、前記半導体ウェハを半導体チップに切断する工程と、
前記半導体加工シート用基材フィルムと前記接着剤層との界面で両者を剥離し、前記接着剤層付きのチップにする工程と、
前記接着剤層付きのチップを、前記接着剤層を介して回路付き基板に接着する工程と
を含む半導体装置の製造方法に用いられる半導体加工シートであって、
前記基材フィルムが、請求項1〜8のいずれか一項に記載の半導体加工シート用基材フィルムであることを特徴とする半導体加工シート。 - 請求項9〜11のいずれか一項に記載の半導体加工シートを、前記接着剤層を介して半導体ウェハに貼付した後、前記半導体ウェハを半導体チップに切断する工程と、
前記半導体加工シート用基材フィルムと前記接着剤層との界面で両者を剥離し、前記接着剤層付きのチップにする工程と、
前記接着剤層付きのチップを、前記接着剤層を介して回路付き基板に接着する工程と
を含むことを特徴とする半導体装置の製造方法。
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