JP6007011B2 - レジスト組成物、レジストパターン形成方法及び化合物 - Google Patents

レジスト組成物、レジストパターン形成方法及び化合物 Download PDF

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Publication number
JP6007011B2
JP6007011B2 JP2012160049A JP2012160049A JP6007011B2 JP 6007011 B2 JP6007011 B2 JP 6007011B2 JP 2012160049 A JP2012160049 A JP 2012160049A JP 2012160049 A JP2012160049 A JP 2012160049A JP 6007011 B2 JP6007011 B2 JP 6007011B2
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Japan
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substituent
atom
component
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JP2012160049A
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English (en)
Japanese (ja)
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JP2014021286A (ja
Inventor
晃也 川上
晃也 川上
内海　義之
義之 内海
直人 本池
直人 本池
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Priority to JP2012160049A priority Critical patent/JP6007011B2/ja
Priority to KR1020130084712A priority patent/KR102049120B1/ko
Publication of JP2014021286A publication Critical patent/JP2014021286A/ja
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Publication of JP6007011B2 publication Critical patent/JP6007011B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2012160049A 2012-07-18 2012-07-18 レジスト組成物、レジストパターン形成方法及び化合物 Active JP6007011B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012160049A JP6007011B2 (ja) 2012-07-18 2012-07-18 レジスト組成物、レジストパターン形成方法及び化合物
KR1020130084712A KR102049120B1 (ko) 2012-07-18 2013-07-18 레지스트 조성물, 레지스트 패턴 형성 방법 및 화합물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012160049A JP6007011B2 (ja) 2012-07-18 2012-07-18 レジスト組成物、レジストパターン形成方法及び化合物

Publications (2)

Publication Number Publication Date
JP2014021286A JP2014021286A (ja) 2014-02-03
JP6007011B2 true JP6007011B2 (ja) 2016-10-12

Family

ID=50143601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012160049A Active JP6007011B2 (ja) 2012-07-18 2012-07-18 レジスト組成物、レジストパターン形成方法及び化合物

Country Status (2)

Country Link
JP (1) JP6007011B2 (ko)
KR (1) KR102049120B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6202000B2 (ja) * 2012-09-21 2017-09-27 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP2009025723A (ja) 2007-07-23 2009-02-05 Fujifilm Corp ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法
TWI417274B (zh) 2008-12-04 2013-12-01 Shinetsu Chemical Co 鹽、酸發生劑及使用其之抗蝕劑材料、空白光罩，及圖案形成方法
JP5436174B2 (ja) * 2009-12-02 2014-03-05 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
JP5557657B2 (ja) * 2010-09-02 2014-07-23 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物及び酸発生剤
JP5940455B2 (ja) * 2010-10-15 2016-06-29 Jsr株式会社 レジストパターン形成方法
WO2012053527A1 (ja) * 2010-10-22 2012-04-26 Jsr株式会社 パターン形成方法及び感放射線性組成物
JP5564402B2 (ja) * 2010-10-29 2014-07-30 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物、酸発生剤
JP5961363B2 (ja) * 2010-11-15 2016-08-02 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト
JP5846889B2 (ja) * 2011-12-14 2016-01-20 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物
JP5783111B2 (ja) * 2012-03-29 2015-09-24 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法

Also Published As

Publication number Publication date
KR20140011293A (ko) 2014-01-28
KR102049120B1 (ko) 2019-11-26
JP2014021286A (ja) 2014-02-03

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