JP6000960B2 - 化学機械研磨消耗品のばらつきを補償する装置及び方法 - Google Patents

化学機械研磨消耗品のばらつきを補償する装置及び方法 Download PDF

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JP6000960B2
JP6000960B2 JP2013534908A JP2013534908A JP6000960B2 JP 6000960 B2 JP6000960 B2 JP 6000960B2 JP 2013534908 A JP2013534908 A JP 2013534908A JP 2013534908 A JP2013534908 A JP 2013534908A JP 6000960 B2 JP6000960 B2 JP 6000960B2
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polishing
conditioner
sensor
coupled
metric
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Japanese (ja)
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JP2013540369A (ja
Inventor
シヴァクマール ダンダパーニ,
シヴァクマール ダンダパーニ,
アシェシュ シェイン,
アシェシュ シェイン,
チャールズ シー. ギャレットソン,
チャールズ シー. ギャレットソン,
グレゴリー イー. メンク,
グレゴリー イー. メンク,
スタン, ディー. ツァイ,
スタン, ディー. ツァイ,
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Applied Materials Inc
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Applied Materials Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/007Cleaning of grinding wheels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
JP2013534908A 2010-10-21 2011-09-12 化学機械研磨消耗品のばらつきを補償する装置及び方法 Active JP6000960B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40564010P 2010-10-21 2010-10-21
US61/405,640 2010-10-21
US13/178,126 US8758085B2 (en) 2010-10-21 2011-07-07 Method for compensation of variability in chemical mechanical polishing consumables
US13/178,126 2011-07-07
PCT/US2011/051251 WO2012054149A2 (fr) 2010-10-21 2011-09-12 Appareil et procédé permettant la compensation de la variabilité des consommables de polissage chimico-mécanique

Publications (2)

Publication Number Publication Date
JP2013540369A JP2013540369A (ja) 2013-10-31
JP6000960B2 true JP6000960B2 (ja) 2016-10-05

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JP2013534908A Active JP6000960B2 (ja) 2010-10-21 2011-09-12 化学機械研磨消耗品のばらつきを補償する装置及び方法

Country Status (6)

Country Link
US (1) US8758085B2 (fr)
JP (1) JP6000960B2 (fr)
KR (1) KR101526845B1 (fr)
CN (1) CN102725832B (fr)
TW (1) TWI483807B (fr)
WO (1) WO2012054149A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10011109B2 (en) 2016-05-23 2018-07-03 Fuji Xerox Co., Ltd. Image forming apparatus, non-transitory computer readable medium, and image forming method

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TWI381904B (zh) * 2009-12-03 2013-01-11 Nat Univ Chung Cheng The method of detecting the grinding characteristics and service life of the polishing pad
US20130196572A1 (en) * 2012-01-27 2013-08-01 Sen-Hou Ko Conditioning a pad in a cleaning module
JP5973883B2 (ja) * 2012-11-15 2016-08-23 株式会社荏原製作所 基板保持装置および研磨装置
US9089949B2 (en) * 2012-12-04 2015-07-28 General Electric Company Automated polishing systems and methods
US9673113B2 (en) 2014-06-05 2017-06-06 Applied Materials, Inc. Method and system for real-time polishing recipe control
KR102333209B1 (ko) 2015-04-28 2021-12-01 삼성디스플레이 주식회사 기판 연마 장치
JP2017121672A (ja) * 2016-01-05 2017-07-13 不二越機械工業株式会社 ワーク研磨方法および研磨パッドのドレッシング方法
SG10201600301SA (en) * 2016-01-14 2017-08-30 3M Innovative Properties Co CMP Pad Conditioner, Pad Conditioning System And Method
JP6357260B2 (ja) 2016-09-30 2018-07-11 株式会社荏原製作所 研磨装置、及び研磨方法
US10571069B2 (en) * 2017-09-14 2020-02-25 Applied Materials, Inc. Gimbal assembly for heater pedestal
US11292101B2 (en) * 2017-11-22 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing apparatus and method
JP6970601B2 (ja) * 2017-12-06 2021-11-24 株式会社荏原製作所 半導体製造装置の設計方法
US11806833B2 (en) * 2018-08-31 2023-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical planarization system and a method of using the same
US20200130136A1 (en) * 2018-10-29 2020-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing apparatus and method

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US5908530A (en) * 1995-05-18 1999-06-01 Obsidian, Inc. Apparatus for chemical mechanical polishing
US6306008B1 (en) * 1999-08-31 2001-10-23 Micron Technology, Inc. Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization
JP2001079752A (ja) * 1999-09-08 2001-03-27 Hitachi Ltd 化学的機械研磨装置およびこれを用いた半導体集積回路装置の製造方法
US6896583B2 (en) * 2001-02-06 2005-05-24 Agere Systems, Inc. Method and apparatus for conditioning a polishing pad
US7101799B2 (en) * 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US7094695B2 (en) * 2002-08-21 2006-08-22 Micron Technology, Inc. Apparatus and method for conditioning a polishing pad used for mechanical and/or chemical-mechanical planarization
JP2004142083A (ja) 2002-10-28 2004-05-20 Elpida Memory Inc ウエハ研磨装置およびウエハ研磨方法
DE10324429B4 (de) * 2003-05-28 2010-08-19 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Betreiben eines chemisch-mechanischen Polier Systems mittels eines Sensorsignals eines Polierkissenkonditionierers
DE10345381B4 (de) * 2003-09-30 2013-04-11 Advanced Micro Devices, Inc. Verfahren und System zum Steuern des chemisch-mechanischen Polierens unter Anwendung eines Sensorsignals eines Kissenkonditionierers
JP2005131732A (ja) * 2003-10-30 2005-05-26 Ebara Corp 研磨装置
US6953382B1 (en) 2004-06-24 2005-10-11 Novellus Systems, Inc. Methods and apparatuses for conditioning polishing surfaces utilized during CMP processing
US7840305B2 (en) 2006-06-28 2010-11-23 3M Innovative Properties Company Abrasive articles, CMP monitoring system and method
JP2008258510A (ja) * 2007-04-07 2008-10-23 Tokyo Seimitsu Co Ltd Cmp装置の研磨条件管理装置及び研磨条件管理方法
JP4658182B2 (ja) * 2007-11-28 2011-03-23 株式会社荏原製作所 研磨パッドのプロファイル測定方法
US8870625B2 (en) * 2007-11-28 2014-10-28 Ebara Corporation Method and apparatus for dressing polishing pad, profile measuring method, substrate polishing apparatus, and substrate polishing method
TW201006609A (en) * 2008-06-09 2010-02-16 Applied Materials Inc CMP pad identification and layer ratio modeling
US8337279B2 (en) * 2008-06-23 2012-12-25 Applied Materials, Inc. Closed-loop control for effective pad conditioning
US8096852B2 (en) * 2008-08-07 2012-01-17 Applied Materials, Inc. In-situ performance prediction of pad conditioning disk by closed loop torque monitoring
JP5236515B2 (ja) * 2009-01-28 2013-07-17 株式会社荏原製作所 ドレッシング装置、化学的機械的研磨装置及び方法
WO2011139501A2 (fr) * 2010-04-30 2011-11-10 Applied Materials, Inc. Modélisation de couple de balayage de conditionnement de tampon pour parvenir à un taux d'élimination constant

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10011109B2 (en) 2016-05-23 2018-07-03 Fuji Xerox Co., Ltd. Image forming apparatus, non-transitory computer readable medium, and image forming method

Also Published As

Publication number Publication date
JP2013540369A (ja) 2013-10-31
US20120100779A1 (en) 2012-04-26
WO2012054149A3 (fr) 2012-06-14
KR101526845B1 (ko) 2015-06-08
US8758085B2 (en) 2014-06-24
TWI483807B (zh) 2015-05-11
KR20130122513A (ko) 2013-11-07
TW201242717A (en) 2012-11-01
CN102725832B (zh) 2016-02-24
WO2012054149A2 (fr) 2012-04-26
CN102725832A (zh) 2012-10-10

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