201006609 六、發明說明： 【發明所屬之技術領域】 系統之增加 本發明之實施例大體上關於化學機械研磨 產能及降低操作成本的方法和設備。 【先前技術】 在積體電路和其他電子裝置的製造t，多層導電、半 導體、及介電材料係沈積在一基板上並由此處移除。在 積趙電路製造期間’必須研磨基板表面以移除高表面構 形、表面缺陷、擦痕或嵌入粒子。化學機械研磨（cMp) 為用來研磨基板表面以移除這類特徵結構的常見製程。 典型地，CMP包含在研磨製程期間引入化學漿，以幫助 基板表面上之特徵結構間的高移除率和選擇性。一般而 言，CMP包含當化學漿存在時於受控壓力、溫度及墊旋 轉速度下固持基板緊靠研磨墊。 CMP之一重要目標為實現基板表面的均勻平坦性。均 勻平坦性包含從基板表面均勻移除材料和移除已沈積在 基板上的不均勻層。成功的CMP亦需要由一基板至下一 基板之製程可重複性。因此，不僅為了單一基板，同時 也為了批次處理的一連串基板而必須實現均勻性。 基板平坦性在很大程度上受到CMP設備的結構和消 耗品(例如’化學漿以及研磨墊）的組成物所支配。一較 佳結構容許研磨裝置，尤其是研磨塾，之剛性和順應性 201006609 間的適虽平衡。一般而言，需要硬度以確保晶粒内部的 均勻性，而足夠的順應性提供基板内部的均勻性。基板 内部的均勻性指的是不管基板形狀及/或基板表面各處 的表面構形，CMP設備跨基板直徑移除特徵結構的能 力晶粒内部的均勻性指的是不管特徵結構的尺寸和密 度，CMP設備在晶粒内部移除特徵結構的能力。 此外，成功的CMP系統必須最大化基板各處之特徵結 構的移除率。在不相應減少消耗品壽命的情況下，增加 的移除率導致増加的產量。此外，CMP系統的操作成本 可藉由減少系統停機時間而降低，其包含最大化墊壽命 以及準確預報及排程墊的更換間隔。 因此，必須要有一種CMP系統能提供增加的特徵結構 移除率、良好的均勻性、最大的研磨墊壽命及減少的系 統停機時間，以增加系統產量並降低系統的總操作成本。 【發明内容】 在本發明之一實施例中，一基板研磨設備包含一平 臺，其具有一研磨墊，該研磨墊包含：一辨識構件其 附接至或嵌入該研磨墊；及一辨識構件讀取器，其配置 為凟取來自該辨識構件的資訊，並傳送由該辨識構件讀 取到的該資訊至一系統控制器，其t該系統控制器係程 式化以基於由該辨識構件讀取到的該資訊，從系統控制 器記憶體擷取該研磨墊特有的資訊。 201006609 在另一實施例中，一用以選擇性改善一複合研磨墊之 性質的方法包含：選擇性測試一複合研磨墊的參數，該 複合研磨墊具有一上部墊和一下部墊，其中該研磨墊具 有一初始總厚度、一初始上部墊厚度及一初始下部墊厚 度，且其中該參數係選擇性測試，同時變化該下部墊厚 .度直到實現所需的參數改善為止；辨識由選擇性測試該 複合研磨墊參數所導致的一改善下部墊厚度；計算一第 二複合研磨墊厚度，其包含該初始上部墊厚度和該改善 下部墊厚度的總和；計算一厚度比例，其中該厚度比例 包含該初始上部墊厚度對該改善下部墊厚度的比例；及 使用該計算所得的厚度比例重縮放該初始上部墊厚度和 該改善下部墊厚度，以實現一最終複合墊厚度，該最終 複σ塾厚度係本質上等於該初始複合塾厚度。 在另一實施例中，一用以選擇性改善一複合研磨墊之 性質的方法包含：選擇性測試一複合研磨墊的參數，該 複合研磨墊具有一上部墊和一下部墊，其中該研磨墊具 有一初始總厚度、一初始上部墊厚度及一初始下部墊厚 度，且其中該參數係選擇性測試，同時變化該上部墊厚 度直到實現所需的參數改善為止；辨識由選擇性測試該 複合研磨墊參數所導致的一改善上部墊厚度；計算一第 一複合研磨墊厚度，其包含該初始下部墊厚度和該改善 上部塾厚度的總和；計算一厚度比例，其十該厚度比例 包含該改善上部墊厚度對該初始下部墊厚度的比例；及 使用該計算所得的厚度比例重縮放該初始下部墊厚度和 201006609 該改善上部墊厚度，以實現一最終複合墊厚度，該最終 複合墊厚度係本質上等於該初始複合墊厚度。 在本發明之尚有另一實施例中，一研磨裝置包含：一 研磨墊，其具有一研磨側和一非研磨側；及一辨識構件， 其附接至或喪入該研磨塾的該非研磨侧。 【實施方式】 ❿ 本發明係關於改善化學機械研磨（CMP)製程之產能及 降低CMP系統之操作成本的方法和設備。本發明之實施 例提供用以改善複合研磨墊之層厚度比例以改善移除率 的方法。本發明之實施例亦提供特定的研磨墊辨識，以 監控及控制針對特定墊發展的製程，以改善總產能並減 少CMP系統的停機時間。 第1圖為CMP系統1〇〇的示意圖，其可合併本發明之 實施例。CMP系統100可包含下部機械基底122，連同 • 裝配在其上之桌面128和可移除的外部蓋（未顯示卜桌 面128支撐一連串研磨站，其可包含第一研磨站ι25、 第二研磨站125、第三研磨站i25及移送站127。移送站 127可適用多種功能，包含：從一裝載設備（未顯示）接收 個別的基板110、洗滌基板11〇、裝載基板110至承载頭 180、從承載頭18〇接收基板11〇、以及移送基板11〇至 裝載設備。 201006609 各研磨站125可包含可旋轉的平臺13〇,其具 墊120附接至其上。各平臺13〇可為沾、 j馮可旋轉的鋁或不鏽 鋼平臺’其附接至一平臺驅動馬達（未顯示卜在一實施 例中，第一研磨站125具有配置在平臺13〇上之第一研 磨墊可適於研磨基UG以本質上移除 配置在基板110上之塊狀含銅材料。第二研磨站125可201006609 VI. Description of the Invention: [Technical Field of the Invention] System Additions Embodiments of the present invention generally relate to methods and apparatus for chemical mechanical polishing throughput and reduced operating costs. [Prior Art] In the fabrication of integrated circuits and other electronic devices, a plurality of layers of conductive, semiconducting, and dielectric materials are deposited on and removed from a substrate. The substrate surface must be ground during fabrication of the product to remove high surface features, surface defects, scratches or embedded particles. Chemical mechanical polishing (cMp) is a common process used to polish the surface of a substrate to remove such features. Typically, CMP involves the introduction of a chemical slurry during the polishing process to aid in high removal rates and selectivity between features on the surface of the substrate. In general, CMP involves holding the substrate against the polishing pad at a controlled pressure, temperature, and pad rotation speed in the presence of the chemical slurry. One of the important goals of CMP is to achieve uniform flatness of the substrate surface. Uniform flatness involves uniform removal of material from the surface of the substrate and removal of uneven layers that have been deposited on the substrate. Successful CMP also requires process repeatability from one substrate to the next. Therefore, uniformity must be achieved not only for a single substrate but also for a series of substrates processed in batches. Substrate flatness is largely governed by the structure of the CMP apparatus and the composition of the consumables (e.g., 'chemical pulp and polishing pad). A better structure allows the grinding device, especially the grinding boring, to be balanced and balanced between the stiffness and compliance 201006609. In general, hardness is required to ensure uniformity within the die, while sufficient compliance provides uniformity within the substrate. Uniformity within the substrate refers to the ability of the CMP apparatus to remove features across the substrate diameter regardless of the shape of the substrate and/or the surface configuration throughout the surface of the substrate, meaning uniformity within the die, regardless of the size and density of the feature. The ability of the CMP device to remove features within the die. In addition, successful CMP systems must maximize the removal rate of features throughout the substrate. The increased removal rate results in increased production without a corresponding reduction in consumable life. In addition, the operating cost of the CMP system can be reduced by reducing system downtime, including maximizing pad life and accurate forecasting and scheduling pad replacement intervals. Therefore, there must be a CMP system that provides increased feature removal, good uniformity, maximum pad life, and reduced system downtime to increase system throughput and reduce overall system operating costs. SUMMARY OF THE INVENTION In one embodiment of the present invention, a substrate polishing apparatus includes a platform having a polishing pad, the polishing pad comprising: an identification member attached to or embedded in the polishing pad; and an identification member read a device configured to retrieve information from the identification member and transmit the information read by the identification member to a system controller, wherein the system controller is programmed to be read based on the identification member The information obtained, the information specific to the polishing pad is retrieved from the system controller memory. 201006609 In another embodiment, a method for selectively improving the properties of a composite polishing pad includes: selectively testing parameters of a composite polishing pad having an upper pad and a lower pad, wherein the polishing The pad has an initial total thickness, an initial upper pad thickness, and an initial lower pad thickness, and wherein the parameter is a selective test while varying the lower pad thickness until the desired parameter improvement is achieved; the identification is determined by the selectivity test An improved polishing pad thickness caused by the composite polishing pad parameter; calculating a second composite polishing pad thickness comprising a sum of the initial upper pad thickness and the improved lower pad thickness; calculating a thickness ratio, wherein the thickness ratio comprises the The ratio of the initial upper pad thickness to the improved lower pad thickness; and the calculated initial upper pad thickness and the improved lower pad thickness using the calculated thickness ratio to achieve a final composite pad thickness, the final complex σ thickness Essentially equal to the initial composite crucible thickness. In another embodiment, a method for selectively improving the properties of a composite polishing pad includes: selectively testing parameters of a composite polishing pad having an upper pad and a lower pad, wherein the polishing pad Having an initial total thickness, an initial upper pad thickness, and an initial lower pad thickness, and wherein the parameter is a selective test while varying the upper pad thickness until a desired parameter improvement is achieved; identifying the composite grinding by selective testing An improvement of the upper pad thickness caused by the pad parameters; calculating a first composite polishing pad thickness comprising a sum of the initial lower pad thickness and the improved upper crucible thickness; calculating a thickness ratio, wherein the thickness ratio comprises the improved upper portion a ratio of the thickness of the pad to the thickness of the initial lower pad; and re-scaling the initial lower pad thickness using the calculated thickness ratio and the improved upper pad thickness of 201006609 to achieve a final composite pad thickness, the final composite pad thickness being essentially Equal to the initial composite pad thickness. In still another embodiment of the present invention, a polishing apparatus includes: a polishing pad having a polishing side and a non-abrasive side; and an identification member attached to or immersed in the non-abrasive of the polishing pad side. [Embodiment] The present invention relates to a method and apparatus for improving the productivity of a chemical mechanical polishing (CMP) process and reducing the operating cost of a CMP system. Embodiments of the present invention provide methods for improving the layer thickness ratio of a composite polishing pad to improve the removal rate. Embodiments of the present invention also provide specific pad identification to monitor and control processes developed for a particular pad to improve overall throughput and reduce downtime of the CMP system. Figure 1 is a schematic illustration of a CMP system, which may incorporate embodiments of the present invention. The CMP system 100 can include a lower mechanical substrate 122, along with a table top 128 and a removable outer cover that are mounted thereon (a table 128 is not shown to support a series of polishing stations, which can include a first polishing station ι25, a second polishing station 125. The third polishing station i25 and the transfer station 127. The transfer station 127 can be applied to various functions including: receiving an individual substrate 110 from a loading device (not shown), washing the substrate 11A, loading the substrate 110 to the carrier head 180, and The carrier head 18 〇 receives the substrate 11 〇 and transfers the substrate 11 〇 to the loading device. 201006609 Each polishing station 125 can include a rotatable platform 13 附 with a pad 120 attached thereto. Each platform 13 〇 can be dip, a von rotatable aluminum or stainless steel platform 'attached to a platform drive motor (not shown). In one embodiment, the first polishing station 125 has a first polishing pad disposed on the platform 13 可 that can be adapted to a grinding base The UG essentially removes the bulk copper-containing material disposed on the substrate 110. The second polishing station 125 can
具有配置在平* 130上之第二研㈣12〇，以研磨基板 110來移除配置在基板110上殘餘的含銅材料。第三研磨 站125可具有配置在平4 13〇上之研磨塾12〇，以研磨 基板110來移除配置在基板110上的阻障層材料。 在一實施例中，研磨站125各自包含墊調節器設備 140。墊調節器設備140可具有可旋轉的臂14〇，其固持 獨立旋轉的調節器頭144和關聯的洗滌盆146。墊調節 器設備140維持研磨墊120的狀態，以便其將有效研磨 基板110。 在一實施例中’研磨站125各自具有組成物傳送/潤洗 臂152,其包含二或多個供給管以提供一或多種cMp組 成物、清潔組成物及/或水給研磨墊12〇的表面。組成物 傳送/潤洗臂152以足夠的量傳送一或多種化學漿以覆蓋 及濕潤整個研磨墊》各組成物傳送/潤洗臂152亦包含數 個喷嘴（未顯示），其可在各研磨及調節循環結束時於研 磨墊120上提供高壓流體潤洗。此外，中間洗滌站155 可放置在鄰接的研磨站125間，以在基板11〇由一站通 過至下一站時清潔基板11〇。 7 201006609 在一實施例中，可旋轉的多頭旋轉料架16〇係放置在 下部機械基底122上方。旋轉料架160可包含四個承載 頭系統1?〇。三個承載頭系統170接收或固持基板11〇， 並按壓使之緊靠配置在研磨站125上之研磨墊12〇。承 載頭系統170之一接收來自移送站127的基板11〇，並 傳送基板至移送站127。旋轉料架160可以中心柱162 支撐，並藉由位於機械基底122内部之一馬達組件（未顯 不）繞旋轉料架軸164旋轉。中心柱162亦可支撐旋轉料 架支撐平板166及蓋188。 在一實施例中’四個承載頭系統17〇繞旋轉料架軸164 以相等的角間隔裝配在旋轉料架支撐平板166上。中心 柱162允許旋轉料架馬達旋轉旋轉料架支撐平板166， 並使承載頭系統170繞行旋轉料架軸164。各承載頭系 統170包含一個承載頭18〇。承載驅動軸178連接承載 頭旋轉馬達176(藉由移除四分之一的蓋188來顯示）至承 載頭180，以便承載頭18〇可繞其自有的轴獨立旋轉。 此外，各承載頭180可在形成於旋轉料架支撐平板ι66 中的徑向狹槽172内獨立地橫向振盈。 承載頭180可執行數種功能。承載頭18〇可包含一真 空機構以夾持基板11 〇。在操作期間，承載頭丨8〇在基 板110的表面背後產生負壓以吸引並固持基板11〇。此 外’承載頭180固持基板11〇使之緊靠研磨墊ι2〇，以 在基板110的背面各處平均分配向下壓力。承載頭18〇 201006609 進一步由驅動轴178傳送扭矩至基板11〇,並確保在cMP 操作期間’基板110不會從承載頭18〇下方滑落。 在實施例中’ CMP.系統1 〇〇配備系統控制器1 9〇， 其係程式化以控制及實行不同的方法和序列。系統控制 器190通常幫助總系統的控制與自動化，並可包含中央There is a second (four) 12 turns disposed on the flat plate 130 to polish the substrate 110 to remove residual copper-containing material disposed on the substrate 110. The third polishing station 125 may have a polishing crucible 12配置 disposed on the flat surface to polish the substrate 110 to remove the barrier layer material disposed on the substrate 110. In an embodiment, the polishing stations 125 each include a pad conditioner device 140. The pad conditioner device 140 can have a rotatable arm 14 固 that holds the independently rotating regulator head 144 and associated wash basin 146. The pad conditioner device 140 maintains the state of the polishing pad 120 so that it will effectively polish the substrate 110. In one embodiment, the polishing stations 125 each have a composition transfer/rinsing arm 152 that includes two or more supply tubes to provide one or more cMp compositions, cleaning compositions, and/or water to the polishing pad 12 surface. The composition transfer/rinsing arm 152 delivers one or more chemical slurries in a sufficient amount to cover and wet the entire polishing pad. Each of the composition transfer/rinsing arms 152 also includes a plurality of nozzles (not shown) that can be used in each of the grinds. A high pressure fluid rinse is provided on the polishing pad 120 at the end of the conditioning cycle. In addition, an intermediate washing station 155 can be placed between adjacent grinding stations 125 to clean the substrate 11 when the substrate 11 passes from one station to the next. 7 201006609 In one embodiment, a rotatable multi-head rotating carriage 16 is tethered over the lower mechanical base 122. The rotating rack 160 can include four carrier systems 1?. The three carrier head systems 170 receive or hold the substrate 11A and press against the polishing pad 12A disposed on the polishing station 125. One of the carrier head systems 170 receives the substrate 11 from the transfer station 127 and transports the substrate to the transfer station 127. The rotating rack 160 can be supported by the center post 162 and rotated about the rotating rack shaft 164 by a motor assembly (not shown) located inside the mechanical base 122. The center post 162 can also support the rotating rack support plate 166 and cover 188. In one embodiment, the four carrier head systems 17 are mounted on the rotating rack support plate 166 at equal angular intervals around the rotating rack shaft 164. The center post 162 allows the rotating rack motor to rotate the rotating rack support plate 166 and causes the carrier head system 170 to rotate the rack shaft 164. Each carrier head system 170 includes a carrier head 18A. The load bearing shaft 178 is coupled to the carrier head rotation motor 176 (shown by removing a quarter of the cover 188) to the carrier head 180 so that the carrier head 18 can independently rotate about its own axis. Additionally, each carrier head 180 can independently vibrate laterally within a radial slot 172 formed in the rotating rack support plate ι 66. The carrier head 180 can perform several functions. The carrier head 18 can include a vacuum mechanism to hold the substrate 11 〇. During operation, the carrier head 8 turns a negative pressure behind the surface of the substrate 110 to attract and hold the substrate 11A. Further, the carrier head 180 holds the substrate 11 against the polishing pad 〇2〇 to evenly distribute the downward pressure throughout the back surface of the substrate 110. The carrier head 18〇 201006609 further transfers torque to the substrate 11A by the drive shaft 178 and ensures that the substrate 110 does not slip under the carrier head 18 during cMP operation. In the embodiment, the CMP. System 1 is equipped with a system controller 19 that is programmed to control and implement different methods and sequences. System controller 190 typically assists in the control and automation of the overall system and can include a central
處理單元（CPU) 192、記憶體194及支持電路196。CPU 192可為用在工業設定中之任何電腦處理器的其中一 % 種’以控制不同的系統功能及製程。 在—實施例中’研磨墊丨2〇可包含兩個墊，其共同組 裝為堆疊，稱為一複合研磨墊。第2圖為研磨設備 2〇〇,例如，研磨站125,的概略橫剖面圖。研磨設備2〇〇 包含金屬平臺230,例如，平臺130,其具有複合研磨墊 220裝配至其上。複合研磨墊22〇和平臺23〇兩者通常 為碟I，並具有本質上相等的直徑。複合研磨塾220包 含上部墊260及下部墊280。黏著劑250，例如，感壓黏 ® I劑（PSA)，係設在墊26G、28G的背面以使塾彼此黏合 並分別黏合至平臺230。 一般而言，較佳的是上部墊26〇比下部墊28〇更硬且 更少順應性，以提供足夠剛性的研磨表面。典型地硬 墊提供較佳的晶粒内部均勻性，而為了確保基板内部均 勻生則而要更多順應性。在一實施例中，上部墊26〇包 含鑄造聚胺基甲酸酯。在—實施例中，下部墊28〇包含 以聚氨基甲酸醋樹脂加硬的聚醋範。具有適當比例的硬 201006609 度及順應性之墊260、280的組合在基板表面上方實現良 好的平坦性.和均勻性。 吾人已發現，在不改變密度、可壓性或其他個別墊 260、280之性質的情況下，CMp製程之改善可藉由改變 上部墊260厚度相對下部墊28〇厚度的比例來實現。在 一實施例中，當複合墊220結合一特定配方的化學漿使 用時，複合墊220的厚度比例可修改以最大化基板上之 籲 特定薄膜或特徵結構的移除率。一旦決定’複合塾22〇 的厚度比例可用於重縮放用在現存的CMP系統中之複 合墊220的總厚度。 第3圖為一流程圖’其說明製程3〇〇，其用於改善一 複合研磨墊的厚度比例以改善一特定效能參數，並用於 重縮放用在現存CMP系統中的墊。在310，提供一具有 硬上部墊（例如’墊260)和順應下部墊（例如，墊28〇)並 具有一初始總厚度的複合墊（例如，複合墊22〇)，其具有 Φ 針對一給定配方之化學漿的基線效能參數。在32〇,於 不改變下部墊或上部墊之個別物理性質的情況下，複合 墊的下部墊厚度係增加及/或減少，同時維持上部墊的固 定厚度’直到針對一給定配方的化學漿實現所需範圍的 結果為止。在一實施例中，上部墊厚度可改變同時維持 下部墊厚度。在另一實施例中’上部及下部墊厚度兩者 皆可改變。一旦找到所需範圍的結果，則上部墊厚度對 下部墊厚度的比例在3 3 0.計算。在3 4 0 複合墊的總厚 .度重縮放至310中之初始總厚度的厚度，其位.於在現存 201006609 CMP系統中使用該墊所需的指定許可差内，同時保持在 330中計算所得之上部對下部墊厚度的比例。 第4a、4b及4c圖繪示製程3〇〇 .的簡化範例。如第私 圖所示，具有約13 mm之初始總厚度4〇〇a的複合墊 具有上部墊460，其具有約8 mm的初始上部厚度46〇a ; 及下部墊480，其具有約5 mm的初始下部厚度。下 部墊480的厚度在測試期間選擇性地增加，以在不影響 基板均勻性的情況下增加移除率。如第4b圖所示，吾人 發現在不影響基板均勻性的情況下，介於約6瓜瓜至約9 mm間的下部塾厚度增加48〇b產生介於約6%至約15% 間的移除率增加。因此，上部墊46〇厚度對下部墊48〇 厚度的比例介於約〇.73至約G.57。第4e圖繪示重縮放 的複。墊400，其具有本質上和初始總厚度相同的 最終總厚度40〇c，且厚度範圍由約4mm的最終上部墊厚 度460c及約7mm的最終下部墊厚度48〇c至約5 8 的最、上部墊厚度460c及約8 mm的最終下部塾厚度 480c。 此外’ CMP之產能和操作成本的改善可藉由將關於特 疋研磨墊的資訊提供給CMp設備的系統控制器來實 現。在不於帛5圖之一實施例中，辨識構件523係附接 至或嵌入研磨墊520。辨識構件523將關於研磨墊52〇 的特定資訊經由辨識讀取器595提供給CMp設備5〇〇的 系統控制器590。在操作中’辨識讀取器595藉由讀取 儲存在辨識構件523中的資訊來辨識特定研磨墊52〇。 11 201006609 以關於特疋研磨墊之資訊預先程式化的系統控制器· 擷取辨識構件523所辨識之關於研磨墊520的資訊，以 用在具有特定研磨墊520的CMP製程中。 在-實施例中，辨識構件523為製造期間堡印在研磨 》520上的條碼’且辨識讀取胃595為掃描器，其掃描 冑碼並將關於特定研磨墊52〇的資訊經由電路系統別 傳達給系統控制器59Ge在―實施例中’辨識構件⑵ • 為麗印在研磨墊520之非研磨側上的條碼。在另一實施 例中，辨識構件523為射頻辨識（RFID)標籤，且辨識讀 取器595為RFID標籤讀取器。在一實施例中辨識構 件523為附接至研磨墊52〇之非研磨側的rfid標籤。 在一實施例中，辨識構件523為嵌入研磨墊52〇之非研 磨側内部的RFID標籤。在一實施例中，在安裝辨識構 件523後、和在將之安裝於CMP設備500中前，研磨墊 520遭受旋轉平衡。 ® 在一實施例中，一旦系統控制器59〇辨識出特定研磨 墊520，則存取關於所辨識之研磨墊52〇的特定資訊以 用在CMP製程中。在一實施例中’存取關於特定研磨墊 之「燒入」製程和配方的資訊，其導致增加的總產能和 研磨墊520的壽命。在一實施例中，存取關於適當的义河^ 製程和配方的資訊，其特定用於最大化產能及特定研磨 墊520的壽命。在一實施例中，存取關於特定研磨墊的 特定磨耗率和壽命，以控制CMP製程，例如，平臺旋轉 速度、化學漿傳送速率以及墊調節參數。在—實施例中， 12 201006609 追蹤特定研磨墊520的磨耗率和墊壽命，並因而使維修 及/或更換排程更為完善以減少CMP設備的停機時間。 在一實施例中’針對特定研磨墊520監控墊壽命對基板 數目的關係，以使CMP程序和化學漿配方更為完善。在 一實施例中’追蹤特定研磨墊520的磨耗率和其他操作 資訊’並將之用於辨識及偵錯過度的墊磨耗情形。 雖然以上内容已揭示本發明之數個實施例，但可在不 偏離本發明基本範圍的情況下做出本發明的其他及進一 步實施例’且本發明範圍當由後附申請專利範圍決定。 【圖式簡單說明】 參照某些繪示於附圖中的實施例來提供於上文扼要總 結之本發明的更具體敘述，以詳細了解本發明之上述的 特徵結構。不過，須注意附圖僅說明此發明的典型實施 例’且因此不應視為對本發明範圍之限制，因為本發明 可容許其他等效實施例。 第1圖為一化學機械研磨（CMP)系統的示意圖，其可 合併本發明之實施例。 第2圖為一研磨設備的概略橫刮面圖。 第3圖為一流程圖，其說明根據本發明之一製程，其 用於改善一複合研磨墊的厚度比例以改善一特定效能參 數，並用於重縮放用在現存cMP系統中的墊。 第4a、4b和4c圖繪示製程3〇〇之一簡化範例。 13 201006609 第5圖為根據本發明之實施例之包含墊辨識部件之 CMP設備的示意圖。 【主要元件符號說明】 100 系統 110 基板 120 研磨墊Processing unit (CPU) 192, memory 194 and support circuit 196. The CPU 192 can be one of the type of any computer processor used in an industrial setting to control different system functions and processes. In the embodiment, the polishing pad 2 can comprise two pads which are collectively assembled as a stack, referred to as a composite polishing pad. Fig. 2 is a schematic cross-sectional view of a polishing apparatus 2, for example, a polishing station 125. The grinding apparatus 2A includes a metal platform 230, such as a platform 130, having a composite polishing pad 220 mounted thereto. Both the composite polishing pad 22 and the platform 23 are generally discs I and have substantially equal diameters. The composite abrasive crucible 220 includes an upper pad 260 and a lower pad 280. Adhesive 250, for example, a pressure sensitive adhesive (PSA), is attached to the back of pads 26G, 28G to bond the turns to each other and to the platform 230, respectively. In general, it is preferred that the upper pad 26 turns harder and less compliant than the lower pad 28〇 to provide a sufficiently rigid abrasive surface. Typically, the hard mat provides better internal grain uniformity and more compliance to ensure uniformity within the substrate. In one embodiment, the upper pad 26 〇 comprises a cast polyurethane. In the embodiment, the lower pad 28A contains a polyacetate which is hardened with a polyurethane resin. The combination of pads 260, 280 with a suitable ratio of hard 201006609 degrees and compliance achieves good flatness and uniformity over the surface of the substrate. It has been found that the improvement of the CMp process can be achieved by varying the ratio of the thickness of the upper pad 260 to the thickness of the lower pad 28 without changing the density, compressibility or properties of the individual pads 260, 280. In one embodiment, when the composite pad 220 is used in conjunction with a particular formulation of chemical pulp, the thickness ratio of the composite pad 220 can be modified to maximize the removal rate of the particular film or feature on the substrate. Once determined, the thickness ratio of the composite 塾22〇 can be used to rescale the total thickness of the composite pad 220 used in existing CMP systems. Figure 3 is a flow chart 'Illustration Process 3' for improving the thickness ratio of a composite polishing pad to improve a particular performance parameter and for rescaling the pads used in existing CMP systems. At 310, a composite pad (eg, composite pad 22) having a hard upper pad (eg, 'pad 260) and a compliant lower pad (eg, pad 28) having an initial total thickness is provided having a The baseline performance parameters of the formulated chemical pulp. At 32 Torr, the thickness of the lower pad of the composite pad is increased and/or decreased without changing the individual physical properties of the lower or upper pad, while maintaining the fixed thickness of the upper pad until the chemical slurry for a given formulation Achieve the results of the required range. In one embodiment, the thickness of the upper pad can be varied while maintaining the thickness of the lower pad. In another embodiment, both the upper and lower pad thicknesses may vary. Once the desired range of results is found, the ratio of the thickness of the upper pad to the thickness of the lower pad is calculated at 3 3 0. The total thickness of the composite pad at 3 4 0 is re-scaled to the thickness of the initial total thickness in 310, which is within the specified tolerance difference required to use the pad in the existing 201006609 CMP system, while remaining at 330 The ratio of the upper portion to the lower pad thickness obtained. Figures 4a, 4b and 4c illustrate a simplified example of a process. As shown in the private figure, a composite mat having an initial total thickness of 4 〇〇a of about 13 mm has an upper pad 460 having an initial upper thickness 46 〇a of about 8 mm; and a lower pad 480 having about 5 mm The initial lower thickness. The thickness of the lower pad 480 is selectively increased during the test to increase the removal rate without affecting the uniformity of the substrate. As shown in Figure 4b, we have found that the increase in the thickness of the lower crucible between about 6 melons to about 9 mm, without affecting the uniformity of the substrate, is between about 6% and about 15%. The removal rate has increased. Therefore, the ratio of the thickness of the upper pad 46 to the thickness of the lower pad 48 介于 is from about 〇.73 to about G.57. Figure 4e shows the complex of the rescaling. Pad 400 having a final total thickness 40 〇c that is essentially the same as the initial total thickness, and a thickness ranging from a final upper pad thickness 460c of about 4 mm and a final lower pad thickness of 48 〇c to about 5 8 of about 7 mm. The upper pad thickness 460c and the final lower jaw thickness 480c of about 8 mm. In addition, the improvement in capacity and operating costs of the CMP can be achieved by providing information about the special polishing pad to the system controller of the CMp device. In one embodiment of the Figure 5, the identification member 523 is attached to or embedded in the polishing pad 520. The identification member 523 supplies specific information about the polishing pad 52A to the system controller 590 of the CMp device 5A via the recognition reader 595. In operation, the recognition reader 595 recognizes the particular polishing pad 52 by reading the information stored in the identification member 523. 11 201006609 A system controller pre-programmed with information about the special polishing pad. The information about the polishing pad 520 identified by the identification member 523 is captured for use in a CMP process having a particular polishing pad 520. In an embodiment, the identification member 523 is a bar code printed on the grinding 520 during manufacture and identifies the reading stomach 595 as a scanner that scans the weight and communicates information about the particular polishing pad 52〇 via the circuitry. It is communicated to the system controller 59Ge in the "invention" that the identification member (2) is a bar code printed on the non-abrasive side of the polishing pad 520. In another embodiment, the identification member 523 is a radio frequency identification (RFID) tag and the identification reader 595 is an RFID tag reader. In one embodiment, the identification member 523 is an rfid tag attached to the non-abrasive side of the polishing pad 52A. In one embodiment, the identification member 523 is an RFID tag that is embedded within the non-grinding side of the polishing pad 52A. In one embodiment, the polishing pad 520 is subjected to rotational balance after the identification member 523 is installed and before being installed in the CMP apparatus 500. In one embodiment, once the system controller 59 identifies a particular polishing pad 520, access to specific information about the identified polishing pad 52A is used in the CMP process. In one embodiment, information regarding the "burn-in" process and formulation of a particular polishing pad is accessed, which results in increased total throughput and life of the polishing pad 520. In one embodiment, information regarding the appropriate Yihe process and formulation is accessed, which is specifically used to maximize throughput and the life of a particular pad 520. In one embodiment, the specific wear rate and lifetime for a particular polishing pad are accessed to control the CMP process, e.g., platform rotational speed, chemical slurry transfer rate, and pad adjustment parameters. In an embodiment, 12 201006609 tracks the wear rate and pad life of a particular polishing pad 520, and thus completes the repair and/or replacement schedule to reduce downtime of the CMP apparatus. In one embodiment, the relationship of pad life to the number of substrates is monitored for a particular polishing pad 520 to complete the CMP process and chemical slurry formulation. In one embodiment, 'the wear rate and other operational information of a particular polishing pad 520' is tracked and used to identify and detect the missed wear of the pad. While the invention has been described in terms of the various embodiments of the present invention, it is intended to BRIEF DESCRIPTION OF THE DRAWINGS A more specific description of the present invention, which is summarized above, is provided with reference to certain embodiments illustrated in the accompanying drawings in which It is to be understood, however, that the appended claims Figure 1 is a schematic illustration of a chemical mechanical polishing (CMP) system incorporating embodiments of the present invention. Figure 2 is a schematic cross-sectional view of a polishing apparatus. Figure 3 is a flow diagram illustrating a process for improving the thickness ratio of a composite polishing pad to improve a particular performance parameter and for rescaling a pad for use in an existing cMP system, in accordance with one aspect of the present invention. Figures 4a, 4b, and 4c illustrate a simplified example of one of the processes. 13 201006609 Figure 5 is a schematic illustration of a CMP apparatus including a pad identification component in accordance with an embodiment of the present invention. [Main component symbol description] 100 system 110 substrate 120 polishing pad
122 下部機械基底 125 研磨站 127 移送站 128 桌面 130 平臺 140 墊調節器設備 142 可旋轉臂 144 旋轉的調節器頭 146 關聯的洗務盆 152 成分傳送/潤洗臂 155 中間洗滌站 160 旋轉料架 162 中心柱 164 旋轉料架軸 166 旋轉料架支撐平板 14 201006609 170 172 176 178 180 188 190 φ 192 194 196 200 220 230 250 • 260 280 300 310 320 330 340 400 承載頭系統 徑向狹槽 承載頭旋轉馬達 驅動軸 承載頭 蓋 系統控制器 中央處理單元 記憶體 支持電路 研磨設備 複合研磨墊 金屬单臺 黏著劑 上部墊 下部墊 製程 步驟 步驟 步驟 步驟 複合墊 201006609 400a 400c 460 460a 460c 480 480a Φ 480b 480c 480c 500 520 523 590 • 595 596 厚度 厚度 上部墊 初始上部厚度 最終上部墊厚度 下部墊 厚度 下部墊厚度 最終下部墊厚度 厚度 設備 研磨墊 辨識構件 系統控制器 辨識讀取器 電路系統 16122 Lower mechanical base 125 Grinding station 127 Transfer station 128 Table top 130 Platform 140 Pad adjuster device 142 Rotatable arm 144 Rotating adjuster head 146 Associated wash basin 152 Component transfer / Rinse arm 155 Intermediate wash station 160 Rotary rack 162 Center post 164 Rotating rack shaft 166 Rotating rack support plate 14 201006609 170 172 176 178 180 188 190 φ 192 194 196 200 220 230 250 • 260 280 300 310 320 330 340 400 Carrier head system radial slot carrier rotation Motor drive shaft bearing head cover system controller central processing unit memory support circuit grinding equipment composite polishing pad metal single adhesive upper pad lower pad process steps steps step composite pad 201006609 400a 400c 460 460a 460c 480 480a Φ 480b 480c 480c 500 520 523 590 • 595 596 Thickness Thickness Upper Pad Initial Upper Thickness Final Upper Pad Thickness Lower Pad Thickness Lower Pad Thickness Final Lower Pad Thickness Thickness Device Abrasive Pad Identification Member System Controller Identification Reader Circuit System 16