JP5987546B2 - ナノ構造物の製造方法、および、ナノ構造物 - Google Patents
ナノ構造物の製造方法、および、ナノ構造物 Download PDFInfo
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- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 3
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 claims description 3
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052739 hydrogen Inorganic materials 0.000 description 5
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- 150000001875 compounds Chemical class 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910017464 nitrogen compound Inorganic materials 0.000 description 3
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- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- -1 silicon (Si) Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 150000001495 arsenic compounds Chemical class 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 150000001247 metal acetylides Chemical class 0.000 description 2
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- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
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- 229920000642 polymer Polymers 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
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- 239000011800 void material Substances 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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Description
図1は、第1の実施形態にかかるナノ構造物の製造方法の処理の流れを説明するためのフローチャートであり、図2は、第1の実施形態にかかるナノ構造物の製造方法の処理の流れを説明するための図である。本実施形態の図2では、垂直に交わるX軸、Y軸、Z軸(鉛直方向)を図示の通り定義している。
ナノ構造層成膜工程S110では、プラズマCVD(Chemical Vapor Deposition)法、MOCVD(Metal Organic CVD)法等を利用して、図2(a)に示すように、複数のナノ構造体220(図2中、黒い塗り潰しで示す)を、基板210の表面に対して垂直方向(図2中、Z軸方向)に延伸するように、基板210の表面に成長させてナノ構造層230を成膜する。なお、ナノ構造層230は、基板210の表面に対して実質的に垂直方向に延伸していればよく、垂直方向を0°としたとき、±10°程度まで傾いていてもよい。
図1に戻って説明すると、照射工程S120では、レーザ光を照射して、ナノ構造体220を加熱するとともに、ナノ構造体220に反応ガスを接触させる。照射工程S120において、YAGレーザ、YLFレーザ、エキシマレーザ等のパルスレーザや、半導体レーザ等のCW(Continuous Wave)レーザを採用することができるが、パルスレーザを用いる方がより好ましい。パルスレーザを走査して照射させることで、CWレーザと比較して、ナノ構造層230の面積(図2中、XY平面における面積)が大きい場合であっても、実質的に均一にナノ構造体220を加熱することが可能である。また、レーザ光を照射する際には大気雰囲気であっても、真空であってもよい。
上述した第1の実施形態では、ナノ構造体220に半導体分子を成膜する技術について説明した。しかし、反応ガスを工夫することで、ナノ構造体220をエッチングすることもできる。第2の実施形態では、ナノ構造体220をエッチングするナノ構造物の製造方法について説明する。
S120 …照射工程
210 …基板
220 …ナノ構造体
230 …ナノ構造層
260 …機能層
300、400 …ナノ構造物
Claims (2)
- 基板の表面に対して垂直方向に延伸するように、複数のナノ構造体を該基板の表面に成長させてナノ構造層を成膜する工程と、
レーザ光を照射して、前記ナノ構造体を加熱するとともに、該ナノ構造体に反応ガスを接触させる工程と、
を含み、
前記レーザ光の波長は、前記ナノ構造体が該レーザ光を吸収する波長であり、
前記反応ガスは、シラン、アンモニア、モノメチルヒドラジン、ヒドラジン、アルシン、ホスフィン、トリメチルガリウム、トリエチルガリウム、トリメチルインジウム、トリエチルインジウム、トリメチルアルミニウム、および、トリエチルアルミニウムの群から選択される1または複数であることを特徴とするナノ構造物の製造方法。 - 前記ナノ構造体は、グラフェンシートの単層体または多層体であるカーボンナノウォールであることを特徴とする請求項1に記載のナノ構造物の製造方法。
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JP2003077388A (ja) * | 2001-09-05 | 2003-03-14 | Canon Inc | 電子放出素子の製造方法及び画像形成装置 |
CN1301212C (zh) * | 2002-09-17 | 2007-02-21 | 清华大学 | 一维纳米材料方向及形状调整方法 |
JP2004362919A (ja) * | 2003-06-04 | 2004-12-24 | Hitachi Zosen Corp | カーボンナノチューブを用いた電子放出素子の製造方法 |
US7504136B2 (en) * | 2003-12-15 | 2009-03-17 | California Institute Of Technology | Method and system for forming a film of material using plasmon assisted chemical reactions |
JP5054896B2 (ja) * | 2005-03-28 | 2012-10-24 | 勝 堀 | カーボンナノウォールの処理方法、カーボンナノウォール、カーボンナノウォールデバイス |
JP2012524402A (ja) * | 2009-04-14 | 2012-10-11 | イルミネックス コーポレイション | 光起電力デバイス用途の半導体ナノワイヤアレイ及びその製造方法 |
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