JP5981786B2 - 集積回路チップ上にセンサを垂直に積み重ねるためのシステムおよび方法 - Google Patents

集積回路チップ上にセンサを垂直に積み重ねるためのシステムおよび方法 Download PDF

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JP5981786B2
JP5981786B2 JP2012145725A JP2012145725A JP5981786B2 JP 5981786 B2 JP5981786 B2 JP 5981786B2 JP 2012145725 A JP2012145725 A JP 2012145725A JP 2012145725 A JP2012145725 A JP 2012145725A JP 5981786 B2 JP5981786 B2 JP 5981786B2
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circuit board
printed circuit
chip
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sensor
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JP2013012743A (ja
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チア−ミーン・リウ
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Honeywell International Inc
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Description

[0001]従来の手法は、プリント回路板（ＰＣＢ）において、加速度計またはジャイロスコープなどの微小電気機械システム（ＭＥＭＳ）センサが配置される側と反対側に特定用途向け集積回路（アナログＡＳＩＣ）チップを配置するものであった。アナログＡＳＩＣチップは、ＭＥＭＳセンサの温度を検知するように設計された温度センサを含むが、この手法では、ＭＥＭＳセンサによって生成された熱がＰＣＢを通って伝えられる必要があるので、検知される温度値が大幅に損失される。したがって、検知されるＭＥＭセンサ温度の精度が大幅に低下される。
[0002]Ａｃａｒに対する米国特許出願公開第２００９／０２８２９１７号は、マルチアクセスの角速度センサおよび加速度センサを有する一体型の微細機械加工された慣性検知装置を提供する。Ａｃａｒは、図１〜図３に示されるように、ＡＳＩＣチップの上部に１つまたは複数のセンサを配置することを開示する。しかし、Ａｃａｒは、センサとＡＳＩＣチップの間に適切な熱伝導もたらすことには無関心である。Ａｃａｒは、センサが金属バイアを介してＡＳＩＣチップに電気的に取り付けられることを示す。このＡＳＩＣチップは、センサによって生成された信号を受け取って増幅／処理するためのパターンおよび信号調整回路を含む。センサとＡＳＩＣチップの間に物理的間隙があると思われるので、センサとＡＳＩＣチップの間の熱伝導性能は、センサがＰＣＢの１つの側に配置されてＡＳＩＣチップがＰＣＢの反対側に配置される設計より劣るはずである。
米国特許出願公開第２００９／０２８２９１７号
[0003]本発明は、サイズが縮小され、熱検知性能が改善された検知装置パッケージを提供する。例示的パッケージは、複数のパターン、アナログの特定用途向け集積回路（アナログＡＳＩＣ）チップ、および微小電気機械システム（ＭＥＭＳ）のダイ上に形成された微細機械加工されたセンサを有するプリント回路板を含む。アナログＡＳＩＣチップは、プリント回路板に電気的かつ機械的に取り付けられる。ＭＥＭＳのダイは、プリント回路板のパターンの一部分とのみ直接的に電気通信し、アナログＡＳＩＣチップに機械的かつ熱的に直接取り付けられる。
[0004]本発明の一態様では、センサは、加速度計または角速度センサのうち少なくとも１つを含む。
[0005]本発明の別の態様では、ＭＥＭＳのダイは、無鉛のチップキャリアパッケージまたはウェーハレベルのチップスケールパッケージ（ＷＬＣＳＰ）である。
[0006]本発明のさらに別の態様では、ＭＥＭＳのダイとアナログＡＳＩＣチップの間に、熱伝導性の化合物／エポキシ樹脂が配置される。
[0007]本発明のさらに別の態様では、１つまたは複数のはんだボールが、アナログＡＳＩＣチップをプリント回路板に電気的に取り付け、１つまたは複数のはんだパターンが、ＭＥＭＳのダイをプリント回路板に電気的に取り付ける。
[0008]本発明の好ましい実施形態および代替実施形態が、以下の図面を参照しながら下記で詳細に説明される。
[0009]本発明の一実施形態によって形成されたセンサパッケージの側断面図である。 [0010]図１に示されたセンサパッケージの斜視図である。 [0011]図１に示されたパッケージで使用されるアナログＡＳＩＣチップの概略ブロック図である。 [0012]本発明の一実施形態によって形成された３軸加速度計またはジャイロスコープの概略上面図である。
[0013]図１−１および図１−２は、本発明の一実施形態によって形成されたパッケージ２０を示す。パッケージ２０は、プリント回路板（ＰＣＢ）２４に実装されたアナログの特定用途向け集積回路（アナログＡＳＩＣ）チップ２６に実装されたセンサ２８を含む。
[0014]アナログＡＳＩＣチップ２６は、１つまたは複数のはんだボール３２を使用してＰＣＢ ２４に電気的に取り付けられる。ＰＣＢ ２４は、はんだボールを受け取るように前もってパターニングされた回路を含み、それによってアナログＡＳＩＣチップ２６内の構成要素とＰＣＢ ２４上の回路の間の電気的接続を作製する。
[0015]一実施形態では、アナログＡＳＩＣチップ２６とＰＣＢ ２４の間のコーナーに、非導電性エポキシ樹脂３４が注射器で注入される。アナログＡＳＩＣチップ２６の下の領域は、毛管作用によって充填される。アナログＡＳＩＣチップ２６がＰＣＢ ２４に取り付けられた後に、アナログＡＳＩＣチップ２６の上側に、Ｍａｓｔｅｒ Ｂｏｎｄ ＥＰ３０ＬＴＥ−ＬＯまたは熱的化合物などの熱伝導性で熱膨張率（ＣＴＥ）の低いエポキシ樹脂３６が塗布される。次いで、アナログＡＳＩＣチップ２６の上部にセンサ２８が置かれ、エポキシ硬化の段階中に摩滅予防先端を有する金属クリップを用いて適当な場所に固定される。センサ２８は、無鉛のチップキャリア（ＬＣＣ）パッケージまたはウェーハレベルのチップスケールパッケージ（ＷＬＣＳＰ）など、複数の別々の方法で前もってパッケージ化されていてよい。
[0016]次いで、センサ２８は、ＰＣＢ ２４の表面に配置された電気的パッドまたはパターンに電気的に接続される。一実施形態では、センサ２８をＰＣＢ ２４に電気的に接続するのに、１つまたは複数のはんだリード３８が使用される。一実施形態では、センサ２８をＰＣＢ ２４に電気的に接続するのにワイヤボンディングが用いられ得る。
[0017]図２は、図１に示されたアナログＡＳＩＣチップ２６のブロック図を示す。アナログＡＳＩＣチップ２６は、プロセッサ４０、温度センサ４２、メモリデバイス４４、および通信デバイス４６を含む。プロセッサ４０は、温度センサ４２、メモリ４４、および通信デバイス４６と信号通信する。通信デバイス４６が、ＰＣＢ ２４上の回路パターン、はんだリード３８、およびはんだボール３２を介して、取り付けられたセンサ２８とデジタルＡＳＩＣ（図示せず）の間を行き来する信号を受け取る。温度センサ４２は、熱伝導性の化合物／エポキシ樹脂３６を介してセンサ２８の温度を検知する。
[0018]図３は、センサパッケージ１００の上面図を示す。センサパッケージ１００は、ＰＣＢ １０２、図１に示されたものに類似の３つのセンサ／アナログＡＳＩＣチップのパッケージ１２０、デジタルＡＳＩＣ １２２、およびコネクタデバイス１０４を含む。デジタルＡＳＩＣ １２２は、ＰＣＢ １０２上の回路パターンを介してセンサパッケージ１００（すなわちパッケージ１２０のすべて）につながる。コネクタデバイス１０４により、デジタルＡＳＩＣ １２２は、データの処理および管理のための中央処理装置（ＣＰＵ）を有するマイクロボードなどの外部構成要素に電気的に接続することが可能になる。ＰＣＢ １０２は、センサのアナログＡＳＩＣチップパッケージ１２０と、デジタルＡＳＩＣ １２２と、コネクタデバイス１０４との間のパターンを含む。
[0019]排他的な所有権または特権が主張される本発明の実施形態が、特許請求の範囲に記載のように定義される。
２０ パッケージ
２４ プリント回路板（ＰＣＢ）
２６ ＡＳＩＣチップ
２８ センサ
３２ はんだボール
３４ 非導電性エポキシ樹脂
３６ エポキシ樹脂
３８ はんだリード
４０ プロセッサ
４２ 温度センサ
４４ メモリデバイス
４６ 通信デバイス
１００ センサパッケージ
１０２ ＰＣＢ
１０４ コネクタデバイス
１２０ パッケージ
１２２ デジタルＡＳＩＣ

Claims (3)

  1. 検知装置であって、
    複数のパターンを備えるプリント回路板と、
    前記プリント回路板に電気的かつ機械的に取り付けられた特定用途向け集積回路（ＡＳＩＣ）チップと、
    微小電気機械システム（ＭＥＭＳ）のダイ上に形成された微細機械加工されたセンサであって、前記プリント回路板の前記複数のパターンの一部分のみと直接的に電気通信し、前記ＡＳＩＣチップに対して機械的かつ熱的に直接取り付けられる、センサと、
    前記ＡＳＩＣチップ及び前記プリント回路板に結合される非導電性エポキシ樹脂と、
    １つまたは複数のはんだボールであって、前記ＡＳＩＣチップが前記１つまたは複数のはんだボールを使用して前記プリント回路板に電気的に取り付けられ、前記非導電性エポキシ樹脂が囲む前記１つまたは複数のはんだボールと、
    前記ＭＥＭＳのダイを前記プリント回路板の１又は複数のパッドまたはパターンに電気的に取り付けるように構成された１又は複数のはんだリードまたはワイヤボンディングと、
    を備える、
    検知装置。
  2. 請求項１に記載の検知装置において、前記ＭＥＭＳのダイが、無鉛のチップキャリア（ＬＣＣ）パッケージまたはウェーハレベルのチップスケールパッケージ（ＷＬＣＳＰ）を備え、前記検知装置がさらに、
    前記ＭＥＭＳのダイと前記ＡＳＩＣチップの間に配置された熱伝導化合物を備える検知装置。
  3. 非導電性エポキシ樹脂によって囲まれるはんだボールを使用して、プリント回路板に特定用途向け集積回路（ＡＳＩＣ）チップを電気的かつ機械的に直接取り付けるステップと、
    微小電気機械システム（ＭＥＭＳ）のダイ上に形成された微細機械加工されたセンサを、前記ＡＳＩＣチップに対して機械的かつ熱的にのみ取り付けるステップと、
    前記ＭＥＭＳのダイの前記ＡＳＩＣに最も近い側と前記プリント回路板とから延びる１または複数のはんだリードまたはワイヤボンディングを使用して、前記センサを、前記プリント回路板上に配置された電気的パターンまたはパッドの一部分にのみ電気的に直接取り付けるステップと
    を含み、前記ＡＳＩＣチップを取り付けるステップは、前記ＡＳＩＣチップが前記プリント回路板に取り付けられた後、非導電性エポキシ樹脂を注入することを含む、方法。
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