JP5975120B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention relates to an electro-optical device and an electronic apparatus that prevent deterioration in display quality.

  In recent years, various electro-optical devices using light-emitting elements such as organic light emitting diodes (hereinafter referred to as “OLEDs”) have been proposed. In such an electro-optical device, a pixel circuit is provided corresponding to the intersection of the scanning line and the data line. The pixel circuit generally has a configuration including the light emitting element, a switching transistor, and a driving transistor (see Patent Document 1).

JP 2007-310311 A

By the way, as the electro-optical device is miniaturized and the display definition is increased, the data line and the driving transistor approach each other and the degree of capacitive coupling increases. For this reason, when the potential of the data line fluctuates, the potential fluctuation changes the holding potential of each part of the driving transistor, particularly the gate, via the parasitic capacitance. Therefore, it has been pointed out that the target current cannot be supplied to the light emitting element, and the display quality is deteriorated.
The present invention has been made in view of the above-described problems, and one of its purposes is to prevent display quality from being deteriorated due to potential fluctuations in data lines.

In order to solve the above problems, in the electro-optical device according to the present invention, a scanning line and a data line intersecting each other, and a pixel circuit provided corresponding to the intersection between the scanning line and the data line, The pixel circuit is electrically connected between a driving transistor for passing a current corresponding to a voltage between a gate and a source from a drain to the source, and between the gate of the driving transistor and the data line. A switching transistor, a first capacitor that holds a voltage between the gate and source of the driving transistor, and a light emitting element that has an anode connected to the source of the driving transistor and emits light in response to a current flowing from the anode toward the cathode And a second capacitor having one end connected to the source of the driving transistor and the other end connected to a power supply line, and the power supply line An electrode that is formed between a wiring layer that forms a gate of the driving transistor and a wiring layer that forms the data line, and is located between the data line and the gate of the driving transistor when viewed in plan It is characterized by including a part.
In the present invention, when viewed in a plan view, an electrode portion extending from the power supply line is located between the data line and the gate of the driving transistor. Since the power supply line and its electrode portion are composed of a wiring layer between the wiring layer constituting the gate of the driving transistor and the wiring layer constituting the data line, the gate of the driving transistor is shielded from the data line. Therefore, according to the present invention, it is possible to prevent the display quality from being deteriorated due to the potential fluctuation of the data line.

In the present invention, the electrode portion of the feeder line includes a first relay electrode that overlaps a part of a gate electrode constituting the gate of the drive transistor when viewed in plan and is electrode-connected to the source of the drive transistor. Is overlapped with a part of the first relay electrode when seen in a plan view, and the first capacitor has a first interlayer insulating film sandwiched between the gate electrode and the first relay electrode, and the second capacitor In a preferred embodiment, a second interlayer insulating film is sandwiched between the first relay electrode and the electrode portion of the feeder line. According to this aspect, the influence due to the potential fluctuation of the data line is difficult to reach not only the gate of the driving transistor but also the source of the driving transistor connected to the first relay electrode.
In this aspect, the data line includes a wiring layer constituting the data line, and includes a second relay electrode provided between the data line and the gate electrode when seen in a plan view, and the second relay electrode includes a contact hole. The structure electrically connected to the electrode part of the said feeder via via is preferable. According to this configuration, the data line is formed in the same layer as the data line, and is shielded by the second relay electrode having substantially the same potential as that of the power supply line. be able to.

In the above configuration, the third relay electrode is formed in the same layer as the first relay electrode and overlaps the second relay electrode when seen in a plan view, and the third relay electrode is connected to the feeder line via a contact hole. The aspect electrically connected to the electrode part of this is preferable. According to this aspect, the driving transistor electrically connects the third relay electrode formed in the same layer as the first relay electrode, the electrode portion of the feeder line, and the second relay electrode formed in the same layer as the data line. The structure shields from the data line not only in the plane direction but also in the cross-sectional direction.
In the present invention, during the initialization period, the drain potential of the driving transistor is set to the first power supply potential, and the initialization potential is supplied to the gate of the driving transistor via the data line and the switching transistor, so that the driving The potential of the source of the transistor is initialized, and in the set period, the potential of the power supply line is set to the second power supply potential, and the light emitting element does not emit light, and the drive transistor has a potential between the gate and the source of the drive transistor. A voltage corresponding to the threshold voltage is held, and in the writing period, a potential corresponding to the gray level is supplied to the gate of the driving transistor via the data line and the switching transistor, and at least the first period to the writing period. A configuration in which a set current flows in two capacitors is preferred. .
The electro-optical device according to the invention can be applied to various electronic apparatuses. Typically, it is a display device, and examples of the electronic device include a personal computer and a mobile phone. In particular, the present invention makes it difficult for fluctuations in the potential of the data line to affect the gate (source) potential of the driving transistor in the pixel circuit, thereby preventing deterioration in display quality. It is suitable for a small display device such as a projector. However, the use of the electro-optical device according to the invention is not limited to the display device. For example, the present invention can also be applied to an exposure apparatus (optical head) for forming a latent image on an image carrier such as a photosensitive drum by irradiation of light.

1 is a block diagram illustrating a configuration of an electro-optical device according to an embodiment. It is a figure which shows the equivalent circuit of the pixel circuit in an electro-optical apparatus. It is a figure which shows the display operation of an electro-optical apparatus. It is a principal part top view which shows the structure of the pixel circuit which concerns on embodiment. It is a fragmentary sectional view which shows the structure fractured | ruptured by the DD line | wire in FIG. It is a fragmentary sectional view which shows the structure fractured | ruptured by the EE line | wire in FIG. It is a principal part top view which shows the structure of the pixel circuit which concerns on an application form (the 1). It is a fragmentary sectional view which shows the structure fractured | ruptured by the FF line | wire in FIG. It is a principal part top view which shows the structure of the pixel circuit which concerns on an application form (the 2). It is a principal part top view which shows the structure of the pixel circuit which concerns on an application form (the 3). It is a figure which shows the electronic device (the 1) to which an electro-optical apparatus is applied. It is a figure which shows the electronic device (the 2) to which an electro-optical apparatus is applied. It is a figure which shows the electronic device (the 3) to which an electro-optical apparatus is applied. It is a principal part top view which shows the structure of the pixel circuit which concerns on a comparative example. It is a fragmentary sectional view which shows the structure fractured | ruptured by the KK line | wire in FIG.

Hereinafter, an electro-optical device according to an embodiment of the invention will be described with reference to the drawings.
FIG. 1 is a block diagram illustrating a configuration of the electro-optical device according to the embodiment.
As shown in this figure, the electro-optical device 1 includes a display unit 100, a scanning line driving circuit 210, a power line driving circuit 220, and a data line driving circuit 230.
Among them, the display unit 100 is provided with m rows of scanning lines 112 along the horizontal (X) direction in the drawing, and n columns of data lines 114 along the vertical (Y) direction and each scanning. The wires 112 are provided so as to be electrically insulated from each other.
The pixel circuit 110 represents one pixel of an image to be displayed, and is provided corresponding to the intersection of the m rows of scanning lines 112 and the n columns of data lines 114. Therefore, in the present embodiment, the pixel circuits 110 are arranged in a matrix and an image of horizontal n pixels × vertical m pixels is displayed. Note that m and n are both natural numbers.

The display unit 100 is provided with individual power supply lines 116 and power supply lines 117 for each row. Although omitted in FIG. 1, a common electrode is provided over each pixel circuit 110 as will be described later, and the lower potential Vct of the element power supply is supplied.
In order to distinguish rows such as the scanning lines 112 and the pixel circuits 110 for the sake of convenience, they may be referred to as 1, 2, 3,..., (M−1), m-th rows in order from the top in FIG. Similarly, in order to distinguish the columns of the data lines 114 and the pixel circuits 110 for convenience, they may be referred to as 1, 2, 3,..., (N−1), nth column in order from the left in FIG.

In the electro-optical device 1, a control circuit 200, a scanning line driving circuit 210, a power line driving circuit 220, and a data line driving circuit 230 are provided around the display unit 100 in which the pixel circuits 110 are arranged in a matrix.
The control circuit 200 controls the operations of the scanning line driving circuit 210, the power supply line driving circuit 220, and the data line driving circuit 230, and also specifies gradation data that specifies the gradation (luminance) of the pixel to be represented by each pixel circuit 110 Is supplied to the data line driving circuit 230.

  The scanning line driving circuit 210 applies scanning signals Gw (1), Gw (2), Gw (3),..., Gw to the scanning lines 112 of 1, 2, 3,. (m-1) and Gw (m) are supplied to sequentially scan the 1st to mth rows in each frame. In this description, the frame means a period required to display an image for one cut (frame) on the electro-optical device 1, and if the vertical scanning frequency is 60 Hz, 16.67 for one cycle. A period of milliseconds.

The power line driver circuit 220 supplies signals Vel (1), Vel (2), Vel (3),..., Vel (1, 2) to the power lines 116 of 1, 2, 3,. m-1) and Vel (m) are supplied, and the potentials of these signals are switched between a lower potential Vel_L and a higher potential Vel_H in synchronization with scanning by the scanning line driving circuit 210. In addition, the power supply line driving circuit 220 supplies ramp signals Vrmp (1), Vrmp (2), Vrmp (3), ..., Vrmp (m-1), Vrmp (m) are supplied in synchronization with scanning by the scanning line driving circuit 210.
Note that this embodiment can be applied to a mode in which a fixed potential is supplied to the power supply line 117 for at least a certain period depending on a driving method of the pixel circuit.

  The data line driver circuit 230 supplies an initialization potential or a data signal having a potential corresponding to the gradation data of the pixel circuit 110 to the pixel circuit 110 located in the row scanned by the scanning line driver circuit 210. It is supplied via the line 114. For convenience, the data signals supplied to each of the data lines 114 of 1, 2, 3,..., (N−1) and the n-th column are represented by Vd (1), Vd (2), Vd (3), respectively. , ..., Vd (n-1), Vd (n).

  An equivalent circuit of the pixel circuit 110 will be described with reference to FIG. In FIG. 2, the (i + 1) -th row scanning line 112 adjacent to the i-th row and the i-th row, and the (j + 1) -th column data line 114 adjacent to the j-th column and the j-th row are shown. A pixel circuit 110 corresponding to a total of 4 pixels of 2 × 2 corresponding to the intersections is shown. Here, i and (i + 1) are symbols for generally indicating the rows in which the pixel circuits 110 are arranged, and are integers of 1 or more and m or less. Similarly, j and (j + 1) are symbols for generally indicating a column in which the pixel circuit 110 is arranged, and are integers of 1 or more and n or less.

As shown in FIG. 2, each pixel circuit 110 includes N-channel transistors 130 and 140, capacitor elements 135 and 137, and a light emitting element 150. Here, since each pixel circuit 110 has the same configuration when viewed electrically, the pixel circuit 110 is representatively described as being located in i rows and j columns.
In the pixel circuit 110 in the i row and j column, the transistors 130 and 140 are thin film transistors formed by, for example, a low-temperature polysilicon process. Among these, the transistor 130 functions as a switching transistor, and the gate is electrically connected to the scanning line 112 in the i-th row, while the drain is electrically connected to the data line 114 in the j-th column, The source is connected to one end of the capacitive element 135 and the gate of the transistor 140. The other end of the capacitor 135 is electrically connected to the source of the transistor 140, one end of the capacitor 137, and the anode of the light emitting element 150. The capacitor 135 functions as a first capacitor that holds a voltage between the gate and the source of the transistor 140.
On the other hand, the drain of the transistor 140 is connected to the i-th power line 116. The other end of the capacitive element 137 is connected to the i-th feeder line 117. The capacitor 137 functions as a second capacitor that is electrically interposed between the source of the transistor 140 and the power supply line 117.

For the sake of convenience, in the pixel circuit 110 of i row and j column, the drain of the transistor 130 is represented by a capital letter D, and the gate of the transistor 140 (the source of the transistor 130 and one end of the capacitor 135) is represented by a small letter g. Yes.
In addition, the drain (power supply line 116) of the transistor 140 is represented by a lowercase letter d, and the source (one end of the capacitor 137 and the anode of the light emitting element 150) of the transistor 140 is represented by a lowercase letter s.

  The cathode of the light emitting element 150 is commonly connected across the pixel circuit 110 to the common electrode 118 maintained at the potential Vct. The light-emitting element 150 is an OLED having a structure in which a light-emitting layer made of an organic EL material is sandwiched between an anode and a cathode facing each other, and emits light with a luminance corresponding to a current flowing from the anode toward the cathode. Note that due to the above structure, a capacitance component 152 is generated between the anode and the cathode of the light-emitting element 150.

In FIG. 2, Gw (i) and Gw (i + 1) indicate scanning signals supplied to the scanning lines 112 in the i and (i + 1) th rows, respectively. Vel (i) and Vel (i + 1) indicate signals supplied to the power line 116 in the i and (i + 1) th rows, respectively, and Vrmp (i) and Vrmp (i + 1) are i and ( The ramp signal supplied to the power supply line 117 in the (i + 1) th row is shown. Vd (j) and Vd (j + 1) represent data signals supplied to the data lines 114 in the j and (j + 1) th columns, respectively.
In the present embodiment, the gate and source of the transistor 140 are shielded from the adjacent data line 114. Details of this structure will be described later.

The operation of the electro-optical device 1 will be described with reference to FIG. FIG. 3 is a diagram for explaining the operation of each unit in the electro-optical device 1.
As shown in this figure, the scanning line driving circuit 210 switches the potentials of the scanning signals Gw (1) to Gw (m) under the control of the control circuit 200, thereby scanning the 1st to mth rows in one frame. The line 112 is sequentially scanned every horizontal scanning period (H).
The operation in one horizontal scanning period (H) is common to the pixel circuits 110 in each row. Therefore, the following description will be made focusing on the pixel circuit 110 in the j-th column of the i-th row when the i-th scanning line 112 is scanned.

  In the present embodiment, the scanning period of each scanning line 112 is roughly divided into an initialization period, a set period, and a writing period in order of time. Among these, the initialization period and the set period are continuous in time, and the set period and the writing period are discontinuous in time.

  Here, the scanning line driving circuit 210 outputs the following scanning signal Gw (i) under the control of the control circuit 200. That is, the scanning line driving circuit 210 sets the scanning signal Gw (i) to the H level in the initialization period and the set period in the scanning period of the i-th scanning line 112, and starts the writing period from the end of the set period. It is set to L level in the period up to the time, H level is again set in the writing period, and L level is set from the end of the writing period to the initial period of the i-th row in the next frame.

The power line drive circuit 220 outputs the following signal Vel (i) and ramp signal Vrmp (i) according to the control by the control circuit 200, respectively.
That is, the power supply line driving circuit 220 sets the signal Vel (i) supplied to the power supply line 116 in the i-th row to the potential Vel_L that is the first power supply potential in the initialization period, and the second power supply potential after the set period. A certain potential Vel_H is set. Note that the timing at which the potential Vel (i) transitions from the potential Vel_H to the potential Vel_L is at the start of the initialization period in FIG. 3, but for the purpose of shortening the light emission period of the light-emitting element 150, In some cases, the potential Vel_L may be shifted to the previous timing.

  Further, the power supply line driving circuit 220 applies the ramp signal Vrmp (i) supplied to the i-th power supply line 117 from the potential Vx to the potential from the start to the end of the scanning period of the i-th scanning line 112. Decrease linearly to Vref (Vx> Vref). Note that the difference between the potential Vx and the potential Vref is actually very small, and the influence of the potential decrease of the ramp signal Vrmp (i) on each part of the pixel circuit 110 is so small that it can be ignored.

The data line driving circuit 230 supplies the following data signals Vdl (1) to Vd (n) to the corresponding data lines 114 according to control by the control circuit 200, respectively.
That is, the data line driving circuit 230 outputs the data signals Vdl (1) to Vd (n) over the initialization period, the set period, and the period from the end of the set period to the timing Ts when the time T has elapsed. The initialization potential Vofs is set all at once, and the pixel corresponding to the intersection of the i-th row and the first to n-th columns is designated from the timing Ts until the scanning period of the next (i + 1) -th scanning line 112 starts. The potential is set according to the gradation data.
Therefore, for example, the data signal Vd (j) supplied to the data line 114 in the j-th column becomes the initialization potential Vofs over the period from the start of the initialization period to the timing Ts, as shown in FIG. The potential Vsig corresponds to the gradation data specified for the pixel circuit 110 in the i row and j column over the period from the timing Ts until the scanning period of the next (i + 1) th scanning line 112 starts.

Now, in the initialization period of the i-th row, the potential Gw (i) of the scanning signal transitions to the H level and the transistor 130 is turned on, so that the gate g of the transistor 140 is electrically connected to the data line 114. It becomes a state. Since the data signal Vd (j) supplied to the data line 114 in the initial period is at the potential Vofs, the gate g is also at the potential Vofs.
On the other hand, the signal Vel (i) supplied to the i-th power line 116 is at the potential Vel_L. In the present embodiment, the difference voltage (Vofs−Vel_L) obtained by subtracting the potential Vel_L from the potential Vofs is set to sufficiently exceed the threshold voltage Vth_tr of the transistor 140.
Therefore, since the transistor 140 is in a driving state in the initialization period, the source s of the transistor 140 (the anode of the light-emitting element 150) is initialized to the potential Vel_L.

Therefore, the voltage between the gate g and the source s of the transistor 140, that is, the voltage held by the capacitor 135 is initialized to a differential voltage between the potential Vofs and the potential Vel_L.
Note that since the potential Vel_L is set so that the potential difference between the potential Vel_L and the potential Vct of the common electrode 118 is less than the light emission threshold voltage Vth_oled of the light emitting element 150, the light emitting element 150 in the initialization period It is an off state (non-light emitting state).

Next, in the set period of the i-th row, since the scanning signal Gw (i) is continuously at the H level, the transistor 130 continues to be on, so that the gate g of the transistor 140 maintains the initialization potential Vofs.
Since the signal Vel (i) transitions to the higher potential Vel_H at the start of the set period, current flows from the power supply line 116 through the drain d and the source s of the transistor 140, so that the potential of the source s starts to rise. In the transistor 140, since the gate g is maintained at the initialization potential Vofs, the voltage between the gate and the source gradually decreases.
At this time, since the potential of the ramp signal Vrmp (i) changes with time, the current flowing between the drain d and the source s of the transistor 140 is on both sides of the light emitting element 150 side and the capacitor element 137 side. Branch to

Among these, the current flowing to the light emitting element 150 side flows into the capacitive component 152 of the light emitting element 150 and starts to charge the capacitive component 152. When this charging is completed soon, the current flowing between the drain d and source s of the transistor 140 does not flow to the light emitting element 150 side, but flows only to the capacitor element 137 side.
On the other hand, if the current flowing to the capacitive element 137 side is called a set current, in this embodiment, the potential of the ramp signal Vrmp (i) decreases linearly and the reduction rate is constant. For this reason, after the charging of the capacitive component 152 is completed, the set current flowing through the path of the power supply line 116 → the drain d → the source s → the capacitive element 137 becomes substantially constant.

  At the end of the set period, the voltage between the gate and the source of the transistor 140 becomes substantially equal to the voltage Vgs1 required for the set current to flow through the transistor 140. Therefore, the source s of the transistor 140 is set to a potential (Vofs−Vgs1) that is lower than the initialization potential Vofs (the potential of the gate g) by the voltage Vgs1. In the present embodiment, the difference between the potential (Vofs−Vgs1) and the potential Vct, that is, the voltage across the light emitting element 150 is set to be lower than the light emission threshold voltage Vth_oled of the light emitting element 150. Accordingly, the light-emitting element 150 is in a non-light-emitting state even during the set period.

The voltage Vgs1 is expressed by the following equation (1).
Vgs1 = Vth_tr + Va (1)
In Expression (1), Vth_tr is a threshold voltage of the transistor 140, and Va is a voltage corresponding to the set current. Therefore, it can be said that the voltage between the gate and the source of the transistor 140 is set to a voltage corresponding to the threshold voltage of the transistor 140 in the set period.

Subsequently, when the set period of the i-th row is completed, the scanning signal Gw (i) transitions to the L level, so that the transistor 140 is turned off, and the gate g of the transistor 140 is in a floating (high impedance) state. Become.
On the other hand, even if the set period is completed, the potential of the ramp signal Vrmp (i) decreases linearly, so that the set current continues to flow through the capacitive element 137.
Here, as the mobility μ of the transistor 140 increases, the value of the current flowing through the transistor 140 increases and the amount of increase in the source potential also increases. Conversely, the smaller the mobility μ, the smaller the value of the current flowing through the transistor 140. In other words, as the mobility μ increases, the amount of decrease in the voltage between the gate and the source of the transistor 140 (negative feedback amount) increases. On the other hand, as the mobility μ decreases, the amount of decrease in the voltage between the gate and source (negative feedback). Amount) becomes smaller. Thereby, even if the mobility μ of the transistor 140 is different for each pixel circuit 110, the difference is compensated.

  In the present embodiment, as shown in FIG. 3, the data signal Vd (j) supplied to the j-th data line 114 at the timing Ts when the time T has elapsed from the end of the set period is the initialization potential Vofs. To the potential Vsig corresponding to the gradation data.

In the writing period of the i-th row, the potential Gw (i) of the scanning signal again changes to the H level and the transistor 130 is turned on, so that the gate g of the transistor 140 is electrically connected to the data line 114. As a result, the potential Vsig of the data signal Vd (j) is obtained. For this reason, since a current corresponding to the potential Vsig flows from the drain d to the source s of the transistor 140, the potential of the source s rises.
On the other hand, since the potential of the ramp signal Vrmp (i) continues to decrease, a current flows through the capacitive element 137. Then, the current that flows from the drain d to the source s in the transistor 140 branches and flows to the capacitive element 135 and the capacitive element 137.
At this time, the larger the current flowing through the transistor 140 in accordance with the potential Vsig, the larger the current flowing into the capacitor element 135. As a result, the potential increase amount of the source s of the transistor 140 (that is, the decrease amount of the gate-source voltage). ) Also increases.

Further, as described above, the operation for compensating the mobility μ of the transistor 140 is continuously executed in this writing period.
At the end of the writing period, the voltage between the gate and the source of the transistor 140 (the holding voltage of the capacitor 135) reflects the potential Vsig of the data signal Vd (j) and the characteristics (mobility μ) of the transistor 140. Is set to the specified value. Specifically, the gate-source voltage Vgs2 of the transistor 140 at the end of the writing period is expressed by the following equation (2).
Vgs2 = Vgs1 + ΔV = Vth_tr + Va + ΔV (2)
ΔV in Expression (2) is a value corresponding to the potential Vsig and the characteristics (mobility μ) of the transistor 140.
At the end of the writing period, the difference between the potential of the source s of the transistor 140 and the potential Vct, that is, the voltage across the light emitting element 150 is set to be lower than the light emission threshold voltage Vth_oled of the light emitting element 150. Accordingly, the light-emitting element 150 is in a non-light-emitting state even during the writing period.

When the writing period of the i-th row ends, the potential Gw (i) of the scanning signal transitions to the L level, so that the transistor 140 is turned off and the gate g is in a floating state. Further, since the potential decrease of the ramp signal Vrmp (i) is also completed, the set current flowing through the capacitor element 137 becomes zero.
Here, since the voltage across the capacitor 135 (the voltage between the gate and the source of the transistor 140) is maintained at the voltage Vgs2 at the end of the writing period, a current corresponding to the voltage Vgs2 flows through the transistor 140. The potential of the source s rises with time. Since the gate g of the transistor 140 is in a floating state, the potential of the gate g rises in conjunction with the potential of the source s.
As a result, the voltage between the gate and the source in the transistor 140 is maintained at the voltage Vgs2 set at the end of the writing period, and the potential of the source s rises with time.
When the voltage across the light emitting element 150, which is the difference between the potential of the source s and the potential Vct, exceeds the light emission threshold voltage Vth_oled of the light emitting element 150, current starts to flow through the light emitting element 150, and the luminance according to the current is increased. Light emission starts.

Assuming that the transistor 140 operates in the saturation region, the current Iel flowing through the light emitting element 150 is expressed by the following equation (3). Note that β is a gain coefficient of the transistor 140 transistor.
Iel = (β / 2) (Vgs2−Vth_tr) ² (3)
By substituting equation (2), equation (3) can be modified as follows.
Iel = (β / 2) (Vth_tr + Va + ΔV−Vth_tr) ²
= (Β / 2) (Va + ΔV) ²
Eventually, the current Iel flowing through the light emitting element does not depend on the threshold voltage Vth_tr of the transistor 140. Therefore, even if the threshold voltage Vth_tr is different for each pixel circuit 110, the difference is compensated and luminance unevenness is suppressed. become.

By the way, in this embodiment, in the scanning period of the i-th row, the scanning signal Gw (i) is at the L level from the end of the set period to the start of the writing period, and the transistor 130 is turned off. The gate of is floating.
Here, since the data line 114 changes from the initialization potential Vofs to the potential Vsig at the timing Ts, the potential change propagates to the gate g and the source s of the transistor 140 via the parasitic capacitance (not shown), and the set period At the end, the voltage Vgs1 set between the gate and source of the transistor 140 is changed. For this reason, the occurrence of display spots, vertical stripes, etc. is caused, and this becomes a factor of greatly reducing the display quality.
Therefore, in the present embodiment, the pixel circuit 110 is configured as follows so that the pixel circuit 110 is less affected by potential fluctuations in the data line 114.

The structure of the pixel circuit 110 will be described with reference to FIGS.
4 is a plan view showing a configuration of four pixel circuits 110 adjacent to each other in the vertical and horizontal directions, FIG. 5 is a partial cross-sectional view taken along line D-d in FIG. 4, and FIG. It is the fragmentary sectional view fractured | ruptured by the EE line | wire in FIG.
Note that FIG. 4 shows a wiring structure when the pixel circuit 110 having the top emission structure is viewed in plan from the observation side, but for simplification, it is formed after the pixel electrode (anode) in the light emitting element 150. The structure is omitted. 5 and FIG. 6, only the pixel electrode of the light emitting element 150 is shown, and the subsequent structures are omitted. In addition, in each of the following drawings, the scales may be varied in order to make each layer, each member, each region, etc., recognizable.

  First, as shown in FIG. 5, semiconductors 130 a and 140 a are provided on the base substrate body 2 by patterning a polysilicon layer in an island shape. The semiconductor 130 a is a base that constitutes the transistor 130, and the semiconductor 140 a is a base that constitutes the transistor 140. Here, the semiconductor 130a is formed in a rectangular shape whose longitudinal length extends in the horizontal direction along the scanning line 112 to be formed later, as shown in FIG. On the other hand, the semiconductor 140a is formed in a rectangular shape whose length extends in the vertical direction along the data line 114 formed later when viewed in plan.

As shown in FIGS. 5 and 6, the gate insulating film 10 is provided so as to cover almost the entire surface of the semiconductors 130a and 140a. On the surface of the gate insulating film 10, a scanning line 112 and a gate electrode 21 are provided by patterning a gate wiring layer made of molybdenum, polysilicon, or the like.
The scanning line 112 extends in the horizontal direction in FIG. 4, and has a portion branched downward in the drawing for each pixel circuit 110, and the branched portion overlaps the central portion of the semiconductor 130 a. . Of the semiconductor 130a, a region overlapping with the branch portion of the scanning line 112 is a channel region 130c (see FIG. 5). Note that in the semiconductor 130a, the left direction in FIG. 5 is the drain region 130d and the right direction is the source region 130s with respect to the channel region 130c.
On the other hand, as shown in FIG. 4 when viewed in plan, the gate electrode 21 has a shape in which the upper side, the right side, and the lower side of the square frame are integrated without having the left side. Among these, the lower side overlaps with the central portion of the semiconductor 140a. Of the semiconductor 140a, a region overlapping with the lower side of the gate electrode 21 is a channel region 140c (see FIG. 5). Of the semiconductor 140a, the left direction in FIG. 5 is the source region 140s and the right direction is the drain region 140d with respect to the channel region 140c.

5 and 6, the first interlayer insulating film 11 is formed so as to cover the scanning line 112, the gate electrode 21 or the gate insulating film 10. Relay electrodes 41, 42, 43, 44 a, 44 b and a power supply line 116 are formed on the surface of the first interlayer insulating film 11 by patterning a conductive wiring layer such as aluminum.
Among these, the relay electrode 41 is connected to the drain region 130d through a contact hole (via) 31 that opens the first interlayer insulating film 11 and the gate insulating film 10, respectively.
In FIG. 4, a portion where different wiring layers overlap each other and a portion where “□” is attached to “□” is a contact hole.

  In FIG. 5, one end of the relay electrode 42 is connected to the source region 130 s through the contact hole 32 that opens the first interlayer insulating film 11 and the gate insulating film 10, while the other end of the relay electrode 42 is It is connected to the gate electrode 21 through a contact hole 33 that opens the first interlayer insulating film 11.

  The relay electrode 43 is connected to the source region 140 s through a contact hole 34 that opens the first interlayer insulating film 11 and the gate insulating film 10. Here, the relay electrode 43 protrudes from the left end of the rectangular portion to the lower side, as shown in FIG. 4 when viewed in plan, and covers a rectangular portion that covers the upper side of the three sides of the gate electrode 21. It is the shape which united the electrode part 43a to perform. For this reason, the relay electrode 43 overlaps with a part of the gate electrode 21 in a plan view and functions as a first relay electrode connected to the source of the transistor 140. Further, the capacitor element 135 has a configuration in which the first interlayer insulating film 11 is sandwiched between the gate electrode 21 and the relay electrode 43 as shown in FIG.

In the j-th column, the relay electrode 44a is provided between the j-th data line 114 and the relay electrode 43, which are formed later, as shown in FIG. It is formed in a rectangle extending in the longitudinal direction.
Similarly, in the j-th column, the relay electrode 44b is provided between the data line 114 in the (j + 1) -th column and the gate electrode 21, as shown in FIG. Is formed in a rectangular shape extending.

  The power supply line 116 extends in the horizontal direction in FIG. 4 and has a portion branched upward in the drawing for each pixel circuit 110. The ends of the branched portions are connected to the drain region 140d through contact holes 35 that respectively open the first interlayer insulating film 11 and the gate insulating film 10 (see FIG. 5).

5 and 6, the second interlayer insulating film 12 is formed so as to cover the relay electrodes 41, 42, 43, 44 a, 44 b, the power supply line 116 or the first interlayer insulating film 11. By patterning a conductive wiring layer such as aluminum on the surface of the second interlayer insulating film 12, relay electrodes 61 and 62 and a power supply line 117 are formed, respectively.
Among these, the relay electrode 61 is connected to the relay electrode 41 through a contact hole 51 that opens the second interlayer insulating film 12. The relay electrode 62 is also connected to the relay electrode 43 through a contact hole 52 that opens the second interlayer insulating film 12.

The power supply line 117 extends in the horizontal direction between the transistor 140 and the power supply line 116 in FIG. 4 when viewed in a plan view, and the pixel circuit 110 has an electrode portion 117a branched upward in FIG. 117b.
Among these, the electrode portion 117a is formed so as to cover the relay electrode 44a and the electrode portion 43a, and is connected to the relay electrode 44a through a plurality of contact holes 53a that open the second interlayer insulating film 12. (See FIG. 6).
The capacitor element 137 has a configuration in which the second interlayer insulating film 12 is sandwiched between the electrode portion 43a and the electrode portion 117a of the relay electrode 43, although not particularly illustrated.
On the other hand, the electrode portion 117b is formed so as to cover the relay electrode 44b, and is connected to the relay electrode 44b through a plurality of contact holes 53b that open the second interlayer insulating film 12 (see FIG. 6). . For this reason, the relay electrode 44b is electrically connected to the feeder line 117.

5 and 6, the third interlayer insulating film 13 is formed so as to cover the relay electrodes 61 and 62, the feeder line 117, or the second interlayer insulating film 12. A data line 114 and relay electrodes 81a, 81b, and 82 are formed on the surface of the third interlayer insulating film 13 by patterning a conductive wiring layer such as aluminum.
Among these, the data line 114 is connected to the relay electrode 61 through the contact hole 71 that opens the third interlayer insulating film 13 (see FIG. 5). For this reason, the data line 114 is connected to the drain region 130d along the path of the relay electrode 61 and the relay electrode 41. Here, the data line 114 is formed along a vertical direction orthogonal to the extending direction of the scanning line 112 as shown in FIG.

In the j-th column, the relay electrode 81a includes the relay electrode 44a and the electrode portion between the j-th data line 114 and the relay electrode 43 / gate electrode 21 as shown in FIG. It is formed so as to overlap with 117a. The relay electrode 81a is connected to the electrode portion 117a through a plurality of contact holes 73a that open the third interlayer insulating film 13 as shown in FIG. For this reason, the relay electrode 81a functions as a second relay electrode.
Here, when the vicinity of the relay electrode 81a corresponding to the j-th row is viewed in cross section, the following structure is formed. That is, as shown in FIG. 6, the relay electrode 44a in the same layer as the relay electrode 43 is connected to the lower side of the electrode portion 117a via the contact hole 53a, and the data line 114 is connected to the upper side of the electrode portion 117a. Since the relay electrode 81a in the same layer as the first electrode is connected through the contact hole 73a, a structure that electrically shields the relay electrode 43 and the gate electrode 21 from the j-th data line 114 is formed. Become.

On the other hand, in the j-th column, the relay electrode 81b is connected between the data line 114 in the (j + 1) -th column and the relay electrode 42 / gate electrode 21 as shown in FIG. 44b and the electrode portion 117b. The relay electrode 81b is connected to the electrode portion 117b through a plurality of contact holes 73b that open the third interlayer insulating film 13 as shown in FIG. For this reason, the relay electrode 81b also functions as the second relay electrode.
Here, when the vicinity of the relay electrode 81b corresponding to the j-th row is viewed in cross section, the following structure is formed. That is, as shown in FIG. 6, the relay electrode 44b in the same layer as the relay electrode 42 (43) is connected to the lower side of the electrode portion 117b via the contact hole 53b, and the upper side of the electrode portion 117b is Since the relay electrode 81b in the same layer as the data line 114 is connected via the contact hole 73b, the relay electrode 42 (43) and the gate electrode 21 are electrically shielded from the data line 114 in the (j +) th column. The body is formed.

  The relay electrode 44a is made of the same wiring layer as the relay electrode 43 and overlaps with the relay electrode 81a as the second relay electrode when seen in a plan view, and thus functions as the third relay electrode. The same applies to the relay electrode 44b.

  As shown in FIG. 5, the relay electrode 82 is connected to the relay electrode 62 through a contact hole 72 that opens the third interlayer insulating film 13.

  A fourth interlayer insulating film 14 is formed so as to cover the data line 114, the relay electrodes 81 a, 81 b, 82 or the third interlayer insulating film 13. An anode of the light emitting element 150 is formed on the surface of the fourth interlayer insulating film 14 by patterning a conductive wiring layer such as aluminum or ITO (Indium Tin Oxide). The anode is an individual pixel electrode for each pixel circuit 110 and is connected to the relay electrode 82 through a contact hole 92 that opens the fourth interlayer insulating film 14. Therefore, the anode (pixel electrode) is connected to the source region 140 s through a path of the relay electrode 82, the relay electrode 62, and the relay electrode 43 that also serves as the other electrode of the capacitor 135.

Although the subsequent structure of the electro-optical device 1 is not shown, a light emitting layer made of an organic EL material is laminated on the anode for each pixel circuit 110, and a transparent electrode common to each pixel circuit 110 serves as a cathode. A common electrode 118 is provided. As a result, the light emitting element 150 becomes an OLED having a light emitting layer sandwiched between an anode and a cathode facing each other, emits light with a luminance corresponding to a current flowing from the anode toward the cathode, and is opposite to the substrate body 2. Will be observed (top emission structure). In addition, a sealing material or the like for shielding the light emitting layer from the atmosphere is provided, but the description is omitted.
In FIG. 4, the pixel electrode that is the anode of the light emitting element 150 is not shown. For this reason, only the lower layer side of the contact hole 92 in FIG. 4 is shown, so that it is expressed only by “□” in order to distinguish it from other contact holes.

In the electro-optical device 1 according to the present embodiment, before referring to the effect of providing the structure including the electrode portions 117a and 117b, problems in the comparative example having no such structure will be described.
FIG. 14 is a plan view showing a configuration of a pixel circuit according to a comparative example, and FIG. 15 is a partial cross-sectional view taken along the line KK in FIG.
As shown in FIG. 14, the comparative example does not have the relay electrode 81a (81b) and the relay electrode 44a (44b) as in the embodiment shown in FIG. 4, and the feeder line 117 is also directed upward in the figure. Has not branched.
Therefore, when the potential of the data line 114 fluctuates, the potential fluctuation propagates to the gate electrode 21 and the relay electrodes 42 and 43 as shown in FIG. The gate electrode 21 is the gate g of the transistor 140, the relay electrode 42 is connected to the gate electrode 21 through the contact hole 33, and the relay electrode 43 is connected to the source region of the transistor 140.
Therefore, when viewed in the pixel circuit 110 of a certain j column, not only the j-th column corresponding to itself but also the adjacent (j + 1) -th column data line 114 undergoes potential variation, the potential variation occurs. Or, it propagates to the relay electrodes 42 and 43, and the voltage set between the gate and source of the transistor 140 is fluctuated, which causes the display quality to be greatly reduced.

On the other hand, according to the present embodiment, as shown in FIG. 4 or FIG. 6, the gate electrode 21 and the relay electrode 43 are each planar from the data line 114 in the j-th column by the following structure. It is shielded both visually and cross-sectionally. In other words, the relay electrode 81a, the electrode portion 117a branched from the power supply line 117, and the relay electrode 44a are electrically connected through the contact holes 73a and 53a so as to have the same potential. Although any one of the relay electrode 81a, the electrode portion 117a, and the relay electrode 44a can provide a shielding effect, the shielding effect can be improved by these two or three.
Similarly, the gate electrode 21 and the relay electrodes 42 and 43 branch from the adjacent (j + 1) -th column data line 114 from the relay electrode 81b and the feeder line 117 in a plan view and a cross-sectional view, respectively. The electrode portion 117b and the relay electrode 44b are electrically connected by contact holes 73b and 53b and shielded by structures having the same potential. The shield effect can be obtained by any one of the relay electrode 81b, the electrode portion 117b, and the relay electrode 44b, but the same is true in that the shield effect is improved by these two or three parties.
Thus, in this embodiment, even if the potential of the data line 114 in the j-th column and the (j + 1) -th column varies, the potential variation is difficult to propagate to the gate electrode 21 and the relay electrodes 42 and 43. It is possible to prevent the display quality from deteriorating.

The present invention is not limited to the above-described embodiments, and the following applications and modifications are possible.
FIG. 7 is a plan view showing the configuration of the pixel circuit 110 according to the application mode (part 1), and FIG. 8 is a partial cross-sectional view taken along the line FF in FIG.
As shown in these drawings, the electrode portion 117a branched from the power supply line 117 may be extended to overlap with the gate electrode 21 when viewed in plan. With this configuration, when the pixel circuit 110 in the j column is viewed, the area for shielding the gate electrode 21 and the relay electrode 43 from the data line 114 in the j column is enlarged, so that the display quality can be more reliably reduced. Can be prevented.
In this configuration, if the electrode portion 117a is simply extended, the area where the relay electrode 43 and the electrode portion 117 overlap is enlarged, and the capacitance of the capacitor 137 is the same as that shown in FIG. Increase in comparison. Therefore, in the electrode portion 43a, the lateral width in FIG. 7 is narrower than that in FIG.

Incidentally, since the relay electrodes 81a and 81b are made of the same conductive layer as the data line 114, it is necessary to form the relay electrodes 81a and 81b electrically independent from the data line 114. On the other hand, since the power supply line 117 and the relay electrodes 44a and 44b are each made of a different conductive layer from the data line 114, as long as they are electrically independent from other relay electrodes and other wirings made of the same conductive layer, There is no problem even if it intersects the data line 114 in plan view.
For this reason, as in the application mode (No. 2) shown in FIG. 9, the feeder line 117 may be patterned without being cut out at the intersection with the data line 114. Further, the relay electrodes 44a and 44b may be integrated to form the relay electrode 44.

  In the embodiment, a plurality of contact holes 53a, 53b, 73a, 73b are used. However, for example, as in the application mode (part 3) shown in FIG. It may be formed. By forming in this way, it is possible to more reliably suppress the potential fluctuation of the data line 114 from propagating to the relay electrodes 42 and 43 and the gate electrode 21 through the gap of the contact hole.

  In the embodiment, the potential of the ramp signal supplied to the power supply line 117 decreases linearly, but the present invention is not limited to this, and the mode of change of the potential output to the power supply line 117 is arbitrary. For example, the waveform of the potential output to the feeder line 117 may be curved. In short, as long as the set current is supplied to the transistor 140, the potential output to the power supply line 117 only needs to change over time from the set period to the writing period. Further, if mobility compensation is not regarded as important, there is little need to flow a set current. Therefore, a configuration in which the feeder line 117 is set to a constant potential, that is, a configuration in which DC is supplied may be employed.

  When the scanning line 112 is patterned by a wiring layer constituting the pixel electrode (anode) or a wiring layer positioned on the upper layer side opposite to the substrate body 2 from the wiring layer, the scanning line and the transistor 140 The power supply line 117 may be patterned between the gate and the source so as to overlap in a plan view or a cross-sectional view. According to this configuration, it is possible to suppress the fluctuation of the potential of the scanning signal supplied to the scanning line 112 from propagating to the gate / source of the transistor 140.

  As the light emitting element 150, in addition to the OLED, an element that emits light with luminance according to current, such as an inorganic EL element or an LED (Light Emitting Diode) element, can be used.

Next, an electronic apparatus using the electro-optical device 1 according to the embodiment will be described with an example.
FIG. 11 is a diagram illustrating an appearance of a personal computer as an electronic apparatus (part 1) in which the electro-optical device 1 according to the above-described embodiment is applied to a display device. The personal computer 2000 includes the electro-optical device 1 as a display device and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002.
In the electro-optical device 1, when an OLED is used for the light emitting element 150, an easy-to-view screen display with a wide viewing angle becomes possible.

  FIG. 12 is a diagram illustrating an appearance of a mobile phone that is an electronic apparatus (part 2) in which the electro-optical device 1 according to the embodiment is applied to a display device. The cellular phone 3000 includes the electro-optical device 1 described above together with the earpiece 3003 and the mouthpiece 3004 in addition to a plurality of operation buttons 3001 and direction keys 3002. By operating the direction key 3002, the screen displayed on the electro-optical device 1 is scrolled.

  FIG. 13 is a diagram illustrating an appearance of a personal digital assistant (PDA) as an electronic apparatus (part 3) in which the electro-optical device 1 according to the embodiment is applied to a display device. The portable information terminal 4000 includes the above-described electro-optical device 1 in addition to a plurality of operation buttons 4001 and direction keys 4002. In the portable information terminal 4000, various information such as an address book and a schedule book is displayed on the electro-optical device 1 by a predetermined operation, and the displayed information is scrolled in accordance with an operation of the direction key 4002.

  The electronic apparatus to which the electro-optical device according to the present invention is applied includes, in addition to the examples shown in FIGS. 11 to 13, a television, a car navigation device, a pager, an electronic notebook, electronic paper, a calculator, a word processor, a work Stations, videophones, POS terminals, printers, scanners, copiers, video players, devices equipped with a touch panel, and the like. In particular, examples of the micro display include a head-mounted display and an electronic viewfinder of a digital still camera or a video camera.

  DESCRIPTION OF SYMBOLS 1 ... Electro-optical device, 21 ... Gate electrode, 43, 44a, 44b, 81a, 81b ... Relay electrode, 110 ... Pixel circuit, 112 ... Scan line, 114 ... Data line, 116 ... Power supply line, 117 ... Feed line, 118 ... Common electrode, 130 ... Transistor, 135, 137 ... Capacitance element, 140 ... Transistor, 150 ... Light emitting element, 210 ... Scanning line driving circuit, 220 ... Power line driving circuit, 230 ... Data line driving circuit, 2000 ... Personal computer, 3000 ... mobile phone, 4000 ... portable information terminal.

Claims (8)

Scanning lines;
Data lines,
A feeder line;
A first transistor for causing a current corresponding to a voltage between a gate and a source to flow from a drain to the source;
A second transistor electrically connected between the gate of the first transistor and the data line;
A light emitting device having an anode electrically connected to a source of the first transistor and emitting light in response to a current flowing from the anode toward the cathode;
A first capacitor having a first insulating film between the first electrode and the second electrode;
A second capacitor having a second insulating film between the first electrode and the third electrode;
Have
The first electrode is electrically connected to a source of the first transistor;
The second electrode is electrically connected to a gate of the first transistor;
The third electrode is electrically connected to the feeder line;
At least a portion of said third electrode, Ri Do weight and the second electrode when viewed in plan,
The electro-optical device , wherein the third electrode is located in a layer between the second electrode and the data line . The electro-optical device according to claim 1, wherein the first electrode is positioned between the first transistor and the second transistor when viewed in plan. The electro-optical device according to claim 1, further comprising a power line electrically connected to a drain of the first transistor. The electro-optical device according to claim 3, wherein the first transistor is positioned between the first electrode and the power supply line when viewed in plan. The electro-optical device according to claim 3, wherein the first electrode is positioned between the second transistor and the power supply line when viewed in plan. 6. The electro-optical device according to claim 1, wherein the first electrode overlaps at least a part of a gate electrode of the first transistor when seen in a plan view. An electronic apparatus comprising the electro-optical device according to claim 1. Scanning lines;
Data lines,
A power line;
A power line;
A first transistor;
A second transistor;
A light emitting element;
A first capacitor in which a first electrode and a second electrode are arranged to face each other with a first insulating film interposed therebetween;
A second capacitor in which the first electrode and the third electrode are arranged to face each other via a second insulating film;
A drain of the first transistor is connected to the power line;
A drain of the second transistor is electrically connected to the data line;
A gate of the second transistor is electrically connected to the scan line;
A gate of the first transistor is electrically connected to a source of the second transistor and the second electrode;
A source of the first transistor is electrically connected to the first electrode and the light emitting element;
The second electrode is disposed so that at least a part thereof overlaps the third electrode in plan view,
The third electrode is disposed in a layer between the second electrode and the data line.
An electro-optical device.

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