JP5963213B2 - 蒸着およびエピタキシャルリフトオフプロセスのためのタイル状基板 - Google Patents
蒸着およびエピタキシャルリフトオフプロセスのためのタイル状基板 Download PDFInfo
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- JP5963213B2 JP5963213B2 JP2014110180A JP2014110180A JP5963213B2 JP 5963213 B2 JP5963213 B2 JP 5963213B2 JP 2014110180 A JP2014110180 A JP 2014110180A JP 2014110180 A JP2014110180 A JP 2014110180A JP 5963213 B2 JP5963213 B2 JP 5963213B2
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- gallium arsenide
- layer
- epitaxial
- substrate
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- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 210000004127 vitreous body Anatomy 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Description
Claims (23)
- タイル状成長基板の形成方法であって、
ホスト基板上に配置される犠牲層上にガリウムヒ素を有するエピタキシャル材料を形成するステップと、
前記ホスト基板から前記エピタキシャル材料を取り除きながら前記犠牲層をエッチングして、エピタキシャルリフトオフプロセス中にガリウムヒ素成長基板を形成するステップと、
少なくとも2のガリウムヒ素成長基板を支持基板上に固着するステップと、
前記支持基板上に配置された前記ガリウムヒ素成長基板を更なる蒸着およびエピタキシャルリフトオフプロセスに曝すステップとを備えることを特徴とする方法。 - 請求項1に記載の方法において、
前記支持基板が、5×10−6℃−1から9×10−6℃−1までの範囲内の熱膨張係数を有することを特徴とする方法。 - 請求項2に記載の方法において、
前記熱膨張係数が、5.2×10−6℃−1から8.5×10−6℃−1までの範囲内であることを特徴とする方法。 - 請求項1に記載の方法において、
前記支持基板が、ニオブ、ニオブ合金、炭化チタン、ケイ酸マグネシウム、ステアタイト、炭化タングステン、炭化タングステンサーメット、イリジウム、アルミナ、アルミナセラミックス、ジルコニウム、ジルコニウム合金、ジルコニア、炭化ジルコニウム、オスミウム、タンタル、ハフニウム、モリブデン、モリブデン合金、それらの酸化物、それらのケイ酸塩、それらの合金、それらの誘導体およびそれらの組合せからなる群から選択される材料を備えることを特徴とする方法。 - 請求項1に記載の方法において、
前記支持基板が、孔を有していないことを特徴とする方法。 - 請求項1に記載の方法において、
前記支持基板がフッ化水素またはフッ化水素酸に対する耐性を有することを特徴とする方法。 - 請求項1に記載の方法において、
前記支持基板上に接着層を形成するステップと、
前記接着層上に前記ガリウムヒ素成長基板を配置するステップとをさらに備えることを特徴とする方法。 - 請求項7に記載の方法において、
前記接着層が、光学接着剤または紫外線硬化接着剤を含むことを特徴とする方法。 - 請求項8に記載の方法において、
前記接着層が、メルカプトエステル化合物を含むことを特徴とする方法。 - 請求項9に記載の方法において、
前記接着層が、フタル酸ブチルオクチル、メタクリル酸テトラヒドロフルフリル、アクリレート単量体、それらの誘導体およびそれらの組合せからなる群から選択される材料をさらに含むことを特徴とする方法。 - 請求項7に記載の方法において、
前記接着層が、シリコーンまたはケイ酸ナトリウムを含むことを特徴とする方法。 - 請求項1に記載の方法において、
前記ガリウムヒ素成長基板がガリウムヒ素合金またはその誘導体を含むことを特徴とする方法。 - 請求項1に記載の方法において、
前記支持基板が、4またはそれ以上のガリウムヒ素成長基板を含むことを特徴とする方法。 - 請求項13に記載の方法において、
前記支持基板が、12またはそれ以上のガリウムヒ素成長基板を含むことを特徴とする方法。 - 請求項1に記載の方法において、
前記エピタキシャル材料が、ガリウムヒ素、アルミニウムガリウムヒ素、インジウムガリウムリン化物、それらの合金、それらの誘導体およびそれらの組合せからなる群から選択される材料を含むことを特徴とする方法。 - 請求項15に記載の方法において、
前記エピタキシャル材料が、ガリウムヒ素を含む層と、アルミニウムガリウムヒ素を含む別の層とを備えることを特徴とする方法。 - 請求項15に記載の方法において、
前記エピタキシャル材料が、ガリウムヒ素緩衝層と、少なくとも1のアルミニウムガリウムヒ素不動態化層と、ガリウムヒ素活性層とを備えることを特徴とする方法。 - 請求項17に記載の方法において、
前記ガリウムヒ素緩衝層が、100nmから500nmまでの範囲内の厚さを有し、前記アルミニウムガリウムヒ素不動態化層の各々が、10nmから50nmまでの範囲内の厚さを有し、前記ガリウムヒ素活性層が、500nmから2,000nmまでの範囲内の厚さを有することを特徴とする方法。 - 請求項15に記載の方法において、
前記エピタキシャル材料が、複数の層を有する太陽電池構造を備え、この太陽電池構造が、ガリウムヒ素、nドープされたガリウムヒ素、pドープされたガリウムヒ素、アルミニウムガリウムヒ素、nドープされたアルミニウムガリウムヒ素、pドープされたアルミニウムガリウムヒ素、インジウムガリウムリン化物、それらの合金、それらの誘導体、およびそれらの組合せからなる群から選択される少なくとも2の材料を含むことを特徴とする方法。 - 請求項1に記載の方法において、
前記犠牲層が、アルミニウムヒ素、その合金、その誘導体およびそれらの組合せからなる群から選択される材料を含むことを特徴とする方法。 - 請求項20に記載の方法において、
前記犠牲層が、1nmから20nmまでの範囲内の厚さを有するアルミニウムヒ素層を含むことを特徴とする方法。 - タイル状成長基板の形成方法であって、
エピタキシャルリフトオフプロセス中に複数のガリウムヒ素成長基板を形成するステップと、
前記複数のガリウムヒ素成長基板を支持基板上に固着するステップと、
前記支持基板上に配置された前記複数のガリウムヒ素成長基板に対して、蒸着プロセスおよび更なるエピタキシャルリフトオフプロセスを実行するステップとを備えることを特徴とする方法。 - 請求項22に記載の方法において、
前記支持基板が、5×10−6℃−1から9×10−6℃−1までの範囲内の熱膨張係数を有することを特徴とする方法。
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US9178105B2 (en) * | 2010-09-21 | 2015-11-03 | Amberwave Inc. | Flexible monocrystalline thin silicon cell |
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CN102414837A (zh) | 2012-04-11 |
WO2010099544A3 (en) | 2011-01-13 |
EP2401768A4 (en) | 2013-07-17 |
KR20110125655A (ko) | 2011-11-21 |
JP2012519381A (ja) | 2012-08-23 |
US20100219509A1 (en) | 2010-09-02 |
JP5607081B2 (ja) | 2014-10-15 |
CN102414837B (zh) | 2016-04-20 |
CA2756857A1 (en) | 2010-09-02 |
JP2014222755A (ja) | 2014-11-27 |
CA2756857C (en) | 2015-08-11 |
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