JP5961681B2 - メモリセル、不揮発性半導体記憶装置およびメモリセルの書き込み方法 - Google Patents
メモリセル、不揮発性半導体記憶装置およびメモリセルの書き込み方法 Download PDFInfo
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- JP5961681B2 JP5961681B2 JP2014265869A JP2014265869A JP5961681B2 JP 5961681 B2 JP5961681 B2 JP 5961681B2 JP 2014265869 A JP2014265869 A JP 2014265869A JP 2014265869 A JP2014265869 A JP 2014265869A JP 5961681 B2 JP5961681 B2 JP 5961681B2
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- memory
- gate electrode
- voltage
- selection gate
- insulating film
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 9
- 238000003860 storage Methods 0.000 claims description 133
- 125000006850 spacer group Chemical group 0.000 claims description 45
- 239000012535 impurity Substances 0.000 claims description 24
- 239000000969 carrier Substances 0.000 claims description 23
- 230000007717 exclusion Effects 0.000 claims description 21
- 238000009825 accumulation Methods 0.000 claims description 17
- 230000000694 effects Effects 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 1
- 101100081899 Arabidopsis thaliana OST48 gene Proteins 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014265869A JP5961681B2 (ja) | 2014-12-26 | 2014-12-26 | メモリセル、不揮発性半導体記憶装置およびメモリセルの書き込み方法 |
| PCT/JP2015/085783 WO2016104482A1 (ja) | 2014-12-26 | 2015-12-22 | メモリセルおよび不揮発性半導体記憶装置 |
| TW104143597A TWI597784B (zh) | 2014-12-26 | 2015-12-24 | 記憶胞、非揮發性半導體記憶裝置及記憶胞之寫入方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014265869A JP5961681B2 (ja) | 2014-12-26 | 2014-12-26 | メモリセル、不揮発性半導体記憶装置およびメモリセルの書き込み方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016127104A JP2016127104A (ja) | 2016-07-11 |
| JP5961681B2 true JP5961681B2 (ja) | 2016-08-02 |
Family
ID=56150500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014265869A Active JP5961681B2 (ja) | 2014-12-26 | 2014-12-26 | メモリセル、不揮発性半導体記憶装置およびメモリセルの書き込み方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5961681B2 (zh) |
| TW (1) | TWI597784B (zh) |
| WO (1) | WO2016104482A1 (zh) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4058232B2 (ja) * | 2000-11-29 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体装置及びｉｃカード |
| JP2005142354A (ja) * | 2003-11-06 | 2005-06-02 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置及びその駆動方法及びその製造方法 |
| JP2010278314A (ja) * | 2009-05-29 | 2010-12-09 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| JP5429305B2 (ja) * | 2009-11-26 | 2014-02-26 | 富士通セミコンダクター株式会社 | 不揮発性半導体記憶装置及びその消去方法 |
| JP2011129816A (ja) * | 2009-12-21 | 2011-06-30 | Renesas Electronics Corp | 半導体装置 |
| KR101979299B1 (ko) * | 2012-12-26 | 2019-09-03 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조방법 |
-
2014
- 2014-12-26 JP JP2014265869A patent/JP5961681B2/ja active Active
-
2015
- 2015-12-22 WO PCT/JP2015/085783 patent/WO2016104482A1/ja active Application Filing
- 2015-12-24 TW TW104143597A patent/TWI597784B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI597784B (zh) | 2017-09-01 |
| TW201635391A (zh) | 2016-10-01 |
| JP2016127104A (ja) | 2016-07-11 |
| WO2016104482A1 (ja) | 2016-06-30 |
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