JP5953246B2 - Power converter - Google Patents

Description

  The present invention relates to a power conversion device using a film capacitor used in a power conversion device such as an inverter device.

  In recent years, environmental and resource issues on a global scale have been highlighted. In order to effectively use resources, promote energy conservation, and suppress global warming gas emissions, power conversion devices such as inverter devices are used in various types of electricity. In addition to equipment and industrial equipment, it is applied and deployed to automobile equipment such as hybrid vehicles (HEV) and electric vehicles (EV).

  In recent years, in particular, the HEV and EV markets have rapidly spread and developed, and technological development relating to energy saving and high efficiency in this field has been activated. Inverter devices used in these HEVs and EVs are required to have higher voltage, smaller size, and higher density in order to reduce fuel consumption, reduce power consumption, and reduce space.

  The inverter device includes components such as a power module including a power semiconductor element such as an IGBT, a bus bar, a coil, and a capacitor for smoothing DC power. In particular, as a capacitor for HEV and EV inverter devices, the voltage used is as high as several hundred volts, so a high withstand voltage film capacitor is mainly used in many cases.

  In addition to having the characteristics of high withstand voltage, film capacitors have the advantages that other capacitors do not have, such as low loss, maintenance-free, long life, self-healing property (self-healing property) at the time of film dielectric breakdown, and high safety. It is also cited as a reason why it is often used for HEV and EV.

  As shown in the processing procedure of FIG. 8, this film capacitor is generally formed of an organic dielectric film (processing step S1), metal film deposition (processing step S2), element winding (processing step S3), metallicon. It is manufactured by a series of processing procedures including formation (processing step S4), lead attachment (processing step S5), element sealing (processing step S6), and capacitor completion (processing step S7).

  In the element winding (processing step S3) in the processing procedure example of FIG. 8, a metal such as aluminum is vapor-deposited on at least one surface of the organic dielectric film 1 such as PET (polyethylene terephthalate) or PP (polypropylene). A metallized film 3 is formed by forming a deposited metal film 2. Further, two metallized films 3 are stacked and wound to obtain a capacitor element 4.

  Further, in the metallicon formation (processing step S4) in the processing procedure example of FIG. 8, in order to use it as an electric circuit element, a metal such as aluminum or zinc is sprayed on the end face 4a of the wound capacitor element 4 to form an electrode. It is manufactured by forming a metallicon 5 for drawing out.

  However, the relative dielectric constant ε of an organic dielectric film capacitor that is currently in practical use is as small as about 2 to 3, and the film capacitor has a disadvantage that its capacitance per unit volume is smaller than other capacitors. For this reason, in the manufacturing process of the film capacitor, conventionally, in order to reduce the space as much as possible, after winding the metallized film (processing step S3) and before forming the metallicon (processing step S4), The cylindrical capacitor element 4 was crushed into an oval shape to have a flat shape as shown in FIG.

  Recently, in order to achieve a further reduction in space, technological development has been advanced to form an ultra-flat capacitor as shown in FIG.

  Patent Document 1 is known as a technique for forming an ultra-flat capacitor. Patent Document 1 states that “a / b = 3 or more, a = 60 mm or more, and from the winding core to the element outer peripheral surface, where a is the major axis of the capacitor element that is flattened and has an oval cross section, and b is the minor axis. Even if it is intended to increase the capacity by increasing the flatness ratio by using a core in which a PP film having a thickness up to 14 mm or less and a PP film having a thickness of 3 to 10 times the dielectric film is wound for 5 to 10 turns is used. Because the core strength can be set to an optimum value, it is possible to realize a metallized film capacitor with high capacity, small size and thinness to improve volumetric efficiency, and excellent productivity, heat dissipation, and reliability. '' ing.

JP 2007-81007 A

  However, in the metallized film capacitor of Patent Document 1, when trying to obtain a capacitor element having a large flatness, a force Fb that the capacitor element 4 tries to return to the original after flattening works as shown in FIG. There is a problem that a predetermined capacity value cannot be obtained because a gap is formed between the metallized films that are overlapped to form a gap.

  In addition, when a film capacitor having a large flattening ratio is incorporated in an inverter device, especially in an inverter for HEV and EV, since the temperature difference is large depending on the environmental temperature and the operating temperature where the device is placed, the thermal expansion of the material Due to the heat shrinkage, the film capacitor element is easily deformed. As a result, there is a problem that a gap is partially generated between the films and the capacitance value is easily changed.

  Furthermore, when a gap is formed between the metallized films, when a high voltage is applied between the films, a partial discharge (corona discharge) occurs in the gaps, causing the metallized film to break down, and the capacitor There was a possibility that the problem of a decrease in capacity occurred.

  In view of the above, the object of the present invention is to provide a compact and high-capacity film that prevents a gap from opening between films of a film capacitor and suppresses a decrease in capacity when a film capacitor element having a large flattening ratio is applied to a power converter. An object of the present invention is to provide a small and highly reliable power converter using a film capacitor having a high capacity and high reliability.

  In order to solve the above problems, for example, the configuration described in the claims is adopted.

  The present application includes a plurality of means for solving the above-mentioned problems. To give an example, a power semiconductor module that converts direct current and alternating current is accommodated in a first chamber of a housing in which a plurality of rooms are formed. In the second chamber, a wound flat film capacitor for smoothing the DC voltage is accommodated, the power semiconductor module and the film capacitor are electrically connected by the conductor plate, and the conductor plate is fixed to the housing. The flat film capacitor is placed on the base member of the second room with the flat surface up and down, the upper flat surface is in contact with the conductive plate, and the conductive plate is fixed to the housing to fix the conductive plate and the pedestal. The power conversion device is characterized by being pressed and fixed between members.

  According to the present invention, when a film capacitor having a high aspect ratio is applied to a power conversion device such as an inverter device, the film capacitor is disposed between the base member and the conductor plate, and the film capacitor is formed by the base member and the conductor plate. Since the pressing force is formed on the flat top and bottom surfaces of the film, even if the force that the flattened film capacitor tries to return to works, the gap between the films can be prevented from opening, and the capacity of the film capacitor is reduced. The occurrence of discharge can be prevented, and a highly reliable film capacitor and a power conversion device using the same can be obtained.

The figure which shows the cross-section of the power converter device of Example 1 which uses a film capacitor with a high aspect ratio. The figure which looked at the capacitor | condenser part 102 of FIG. 1 from the direction of arrow A. FIG. The figure which shows the cross-section of the power converter device of Example 2 which uses a film capacitor with a high aspect ratio. The figure which shows the cross-section of the power converter device of the other example of Example 2 which uses a film capacitor with a high flat rate. The figure which shows the cross-section of the power converter device of Example 3 which uses a film capacitor with a high aspect ratio. The figure which shows the cross-section of the power converter device which made the film capacitor with a high flat rate the non-pressing state. The figure which shows the capacity | capacitance change of the film capacitor by a temperature cycle test. The figure which shows an example of the manufacturing method of the conventional general film capacitor. The figure which shows an example of a flat type (oval type) film capacitor. The figure which shows an example of a film capacitor with a high aspect ratio. The figure for demonstrating the problem of a capacitor with a high aspect ratio.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 is a diagram illustrating a cross-sectional structure of a power conversion device using a film capacitor having a high flatness ratio according to Example 1 of the present invention.

  The configuration of the power conversion device 100 in FIG. 1 is roughly divided into a conversion device unit 101, a capacitor unit 102, and a cooling unit 103. Among them, the conversion device unit 101 is mainly configured by the power semiconductor module 20, and the power semiconductor module 20 itself is fixedly arranged with its periphery covered in a space formed by the base 11 and the support member 12. Further, power semiconductor module leads 21 and 29 connected to electrodes (not shown) of the power semiconductor module 20 are taken out from the upper portion of the power semiconductor module 20.

  The capacitor unit 102 is mainly composed of a film capacitor 10 having a high flatness. The film capacitor 10 is disposed with the flat surface up and down with the periphery covered in a space formed by the base 11 at the bottom, the support member 12 at the side, and the upper conductor plate 6.

  The upper conductor plate 6 is composed of three layers of a P-pole conductor 8, a conductor fixing material 7, and an N-pole conductor 9. The conductor fixing material 7 insulates the P-pole conductor 8 and the N-pole conductor 9 from each other. Yes. The upper conductor plate 6 has a part of the conductor fixing member 7 fixed to the support member 12 at several points by a fixing member 13 such as a screw and a spring member 14, whereby the conductor plate 6 presses the film capacitor 10 from above. doing. In the example shown in the drawing, the surface of the conductor plate 6 on the N-pole conductor 9 side is in contact with the exterior insulating material 16 of the film capacitor 10, and the film capacitor 10 is prevented from being peeled off by a pressing force when screwed.

  In the case of FIG. 1, the front surface of the film capacitor 10 shown in FIG. 1 shows a surface including the major axis a and the minor axis b of the capacitor element that is flattened and has a cross section as shown in FIG. The surface is a surface on which the metallicon 5 for drawing out the electrode of FIG. 8 is formed. In the example shown in the figure, four capacitor leads 15 are taken out from the surface (electrode surface) on which the metallicon 5 is formed, and these are connected to the P-pole conductor 8 among the three-layer members of the upper conductor plate 6, for example. ing. The P-pole conductor 8 is connected to the power semiconductor module lead 29 of the power semiconductor module 20.

  Although not shown in FIG. 1, the opposite surface is also a surface (electrode surface) on which the metallicon 5 for drawing out the electrode is formed, and from here also the three-layer member of the upper conductor plate 6 by the capacitor lead 15 Are connected to the N-pole conductor 9. The N-pole conductor 9 is connected to the power semiconductor module lead 21 of the power semiconductor module 20.

  FIG. 2 is a view of the capacitor portion 102 as viewed from the direction of arrow A, and the film capacitor 10 is pressed against the upper conductor plate 6 and has a base 11 at the bottom, a support member 12 at the side, and an upper portion. A space formed by the conductor plate 6 is covered and fixedly arranged. A first electrode 22 is formed on the right side of the film capacitor 10, and a second electrode 23 is formed on the left side. The first electrode 22 is connected to the P-pole conductor 8 by the capacitor lead 15, and the second electrode 23 is connected to the N-pole conductor 9 by the capacitor lead 15. Further, the outer sides of the first electrode 22 and the second electrode 23 are sealed with a sealing member 24.

  Of the above-described configuration of the film capacitor 10, the electrode formation is performed in the metallicon formation process in the process step S4 of FIG. 8, and the capacitor lead 15 connection is performed in the lead attachment process in the process step S5 of FIG. The outer sealing is performed in the blocking sealing process in the process step S6 of FIG.

  Returning to FIG. 1, the cooling unit 103 is formed by the first flow path 17 and the second flow path 18. Of these, the first flow path 17 is formed in contact with the capacitor section 102, for example, a cooling air ventilation flow path is formed in the lower portion of the capacitor section 102 to remove the heat generation amount of the film capacitor 10 from the outside and cool it. The second flow path 18 is formed in the conversion device unit 101. For example, by forming a ventilation flow path for cooling air around the power semiconductor module 20, the heat generation amount of the power semiconductor module 20 is externally removed and cooled. . In addition, the 1st flow path 17 and the 2nd flow path 18 may be connected as shown in FIG.

The film capacitor 10 having a high flatness that can be used in the above-described Example 1 can be obtained as follows. For example, after forming a metallized film by depositing aluminum on one side of a polypropylene (PP) film having a thickness of 3.0 μm with a vacuum vapor deposition machine so that the film thickness resistance is about 15 Ω / m ² , the metallized film A film having a length capable of obtaining a predetermined capacitance value is wound by stacking two sheets to form a cylindrical capacitor element. Thereafter, the capacitor element is crushed into a flat shape by a hot press machine to form a capacitor element having a high flatness ratio in which the ratio of the major axis a to the minor axis b is 5. Then, metal spraying is performed on both end faces of the capacitor element to form a current collecting metallicon, and a capacitor lead for electrical connection to the conductor plate of the power converter is connected to the metallicon with solder. Then, the capacitor element is wound around the capacitor element with an adhesive polyimide tape on one side to form an exterior insulation coating. Finally, in order to protect the capacitor element from moisture, both ends of the capacitor element are bonded with epoxy resin. The film capacitor with a high aspect ratio is completed.

  In the first embodiment, the film capacitor 10 having a high flatness is disposed on the base 11 in the case of the power conversion device 100, the power semiconductor module 20 is disposed in the opening 19 of the flow path 18, and the conductor plate is placed on the film capacitor 10. 6, and the film capacitor 10 was fixed to the support frame 12, which is a part of the case, with a spring member 14 and a screw as the fixing member 13 so that a pressing force is applied to the film capacitor 10.

  Finally, the conductor plate 6 and the leads 21 and 29 of the power semiconductor module 20 and the lead 15 of the film capacitor 10 are electrically connected to each other by welding, and other circuit boards and components necessary for the circuit are attached. Completed the converter.

  The power conversion device 100 of the present invention shown in the first embodiment is itself formed in a single box, housing, case, unit or block, but here they are collectively referred to as a power conversion device unit. I will decide. The power converter unit 100 is divided into a plurality of rooms by a pedestal portion 11 and a support frame 12, and this room is a converter unit 101 and a capacitor unit 102. Each room houses a power semiconductor module 20 and a film capacitor 10 as power devices, and the power devices are connected by a bus bar above the power converter unit. The bus bar is a conductor plate 6 formed of three layers of a P-pole conductor 8, a conductor fixing material 7, and an N-pole conductor 9. The bus bar is attached to the power converter unit by the conductor fixing member 7 and fixes the film capacitor 10 while pressing it in the flat direction.

  FIG. 1 shows that one power semiconductor module 20 and one film capacitor 10 are housed. This is because the power semiconductor module 20 for three phases and the power for three phases are contained in one box. The film capacitor 10 can be laid out to accommodate it. In any case, it is important that the conductor plate 6 (bus bar) connecting the power semiconductor module 20 and the film capacitor 10 is used to fix the film capacitor 10 while pressing it in the flat direction. .

  3 and 4 are diagrams showing a cross-sectional structure of a power conversion device using a film capacitor having a high flatness ratio according to a second embodiment which is an embodiment of the present invention. In the first embodiment, the conductor plate 6 is in direct contact with the outer insulating material 16 of the film capacitor 10, whereas in the second embodiment, the conductive plate 6 is indirectly connected to the outer insulating material 16 of the film capacitor 10 through the inclusions 30. It is configured to touch.

  More specifically, in FIG. 3, the inclusion is an elastic member, and is in indirect contact with the silicone rubber sheet 30 having a thickness of 3 mm, for example. In FIG. 4, the inclusion is a heat insulating material 31, and is suppressed from being heated by heat generated by the film capacitor 10. In other respects, Example 1 and Example 2 have the same structure and function.

  The specification and manufacturing method of the film capacitor 10 having a high flatness ratio according to the second embodiment are the same as those of the first embodiment, and the assembly process of the power conversion device 100 is performed as follows.

  In the assembly process, the film capacitor 10 having a high flatness is disposed on the base 11 in the case of the power converter, the power semiconductor module 20 is disposed in the opening 19 of the flow path 18, and the elastic member 30 is formed on the film capacitor 10. A silicone rubber sheet having a thickness of 3 mm (in the case of FIG. 3) or a heat insulating material 31 (in the case of FIG. 4) was placed, and the conductor plate 6 was disposed thereon. And it fixed to the support frame 12 which is a part of case so that a pressing force might be applied to the film capacitor 10 with the spring member 14 and the screw which is the fixing member 13.

  Finally, the conductor plate 6 and the power semiconductor module leads 21 and 29 and the film capacitor 10 lead 15 are electrically connected by welding, and other circuit boards and components necessary for the circuit are attached to convert the power. The device was completed.

  FIG. 5 is a diagram showing a cross-sectional structure of a power conversion device 100 using the film capacitor having a high flatness ratio according to the third embodiment which is an embodiment of the present invention. In Example 3, the film capacitor 10 is configured to indirectly contact the pedestal 11 via the high thermal conductive sheet 27.

  The specifications and manufacturing method of the film capacitor having a high flatness ratio are the same as those in the first embodiment and the description thereof is omitted. However, the assembly process of the power conversion device 100 is as follows.

  A silicone-based high thermal conductive sheet 27 having a thickness of 2 mm and a thermal conductivity of 1.0 W / mK is previously laid on the pedestal portion 11 where the film capacitor 10 in the case of the power converter 100 is disposed, and a high flatness ratio is provided thereon. A film capacitor 10 is disposed. The power semiconductor module 101 is disposed in the opening 19 of the flow path 18, the conductor plate 6 is disposed on the film capacitor 10, and the spring frame 14 and the screws 13 are attached to the film capacitor 10 on the support frame 12 that is a part of the case. Fix so that the pressing force is applied.

  Finally, the conductor plate 6 and the lead of the power semiconductor module and the lead of the film capacitor were electrically connected to each other by welding, and other circuit boards and components necessary for the circuit were attached to complete the power conversion device. .

  As described above in detail, Example 1 is a direct pressing example, Examples 2 and 3 are indirect pressing examples, and Example 2 is an example in which an inclusion is interposed above the film capacitor 10, Example 3. Shows an example in which inclusions are interposed under the film capacitor 10. In addition, inclusions can be selected according to the purpose, such as vibration prevention (FIG. 3 of the second embodiment), heat transfer prevention to the conductor plate 6 side (FIG. 4, second embodiment, heat insulating material), For example, positive heat dissipation to the two flow paths (Example 3).

  As described below, in the present invention, the effect of reducing the capacitance of the capacitor is obtained by using the film capacitor 10 in a pressed state, and further, the effect of inclusions can be obtained while maintaining this performance.

  The effect of the present invention will be clarified by comparing the present invention, which is characterized in that the film capacitor 10 is used in a pressed state, with a comparative example in which the film capacitor 10 is not used in a pressed state. This comparative example is shown in FIG.

  FIG. 6 is a diagram showing a cross-sectional structure of a power conversion device using a film capacitor having a high flatness ratio as a comparative example. As can be seen, the film capacitor is not pressed. The specification and manufacturing method of the film capacitor having a high flatness are the same as those in the first embodiment, and the description thereof is omitted.

  In manufacturing the power conversion device 100 in the comparative example, first, the film capacitor 10 having a high flatness is arranged at a predetermined position of the conductor plate 6, and the lead 15 of the film capacitor 10 and the conductor plate 6 are electrically connected by welding. did. And the power semiconductor module 20 is arrange | positioned in the opening part 19 of the flow path 18 of the power converter device 100, the conductor board 6 which attached the film capacitor 10 on it is arrange | positioned, and the conductor board 6 is supported by the power converter device 100. The member 11 was fixed with a screw which is a fixing member 13.

  Finally, the conductor plate 6 and the leads 19 and 21 of the power semiconductor module 20 are electrically connected by welding, and other circuit boards and parts necessary for the circuit are attached to complete the power conversion device.

  In the comparative example of FIG. 6, a space is formed between the flat upper surface of the film capacitor 10 having a high flatness ratio and the conductor plate 6, and between the flat lower surface and the pedestal member 11, and unlike the first to third embodiments, The film capacitor is not pressed.

  In order to verify the effect of the present invention with respect to Examples 1 to 3 and the comparative example, the following temperature cycle test was performed, and the change in the capacity of the film capacitor 10 was measured. Specifically, the effect of the present invention was verified by the following method.

  First, after the power conversion device 100 was manufactured and completed, the measurement leads of the LCR meter were connected to both the leads 15 forming the pair of the film capacitors 10 to measure the initial capacitance value.

  Then, the power conversion device 100 is placed in a temperature cycle test tank, and the temperature cycle test conditions are as follows: 1 hour for the low temperature side (−40 ° C.) and 1 hour for the high temperature side (125 ° C.). The bath was set and a temperature cycle test was performed.

  And the power converter 100 was taken out from the test tank for every predetermined number of temperature cycle tests, and the measurement of the capacity of the film capacitor 10 was repeated with an LCR meter.

  The temperature cycle test results will be described below. FIG. 7 shows the results of performing a temperature cycle test on Example 1 to Example 3 and the comparative example, and measuring the capacitance of the capacitor every predetermined cycle. In FIG. 7, the horizontal axis represents the number of temperature cycle tests, and the vertical axis represents the capacitor capacity at each temperature cycle, which is the ratio when the predetermined (target) capacity value of the capacitor used in this test is 1. displayed.

  As can be seen from FIG. 7, the comparative example had a capacity of only 90% of the predetermined capacity at the initial stage before the temperature cycle test (when the number of cycles in FIG. 7 was 0). This is because the flattened flat portion of the film capacitor having a high flatness acts to return to the original, and a gap is formed between the overlapping films, resulting in a decrease in capacity.

  On the other hand, in Example 1 to Example 3, since the flat part of the film capacitor is sandwiched between the pedestal and the conductor plate with a pressing force, there is no gap between the overlapping films. (1.0) can be obtained.

  Next, looking at the change in capacity at each cycle of the temperature cycle test, in the comparative example, as the number of temperature cycles increases, the capacity tends to decrease. The capacity was reduced to%. This is because the thermal expansion and contraction of the material was repeated by the temperature cycle test, and as a result, the gap between the films further expanded compared to the initial stage, and there was a gap between the films. The partial discharge occurred at 600 V, and the film partially repeated dielectric breakdown and self-healing to reduce the capacity.

  On the other hand, in Example 1 to Example 3, even if the material due to the temperature cycle has thermal expansion and contraction, the flat portion of the film capacitor is sandwiched between the pedestal and the conductor plate with a pressing force. The change from the predetermined capacity was suppressed to be small without causing a gap between the overlapping films.

  In the embodiment of the present invention described in detail above, a film capacitor having a high flatness ratio is arranged on the base 11 with the flat surface up and down, and the P-pole conductor 8, the conductor fixing material 7, and the N-pole conductor 9 are arranged from the upper surface. It is fixed while being pressed by a conductor plate 6 composed of three layers. Thereby, the performance is maintained by suppressing the peeling of the film capacitor having a high aspect ratio and the generation of voids.

  In this embodiment, a film capacitor with a high flatness created by winding a film is targeted. However, the pressing and fixing method using the conductor plate 6 is a flat film capacitor formed by laminating a large number of organic dielectric films. It can also be applied to. By fixing the flat film capacitor while being pressed by the conductor plate 6, it is possible to maintain the performance by suppressing the occurrence of peeling and voids.

1: Dielectric film 2: Deposition metal film 3: Metallized film 4: Capacitor element 5: Metallicon 6: Conductor plate 7: Conductor fixing material 8: P pole conductor 9: N pole conductor 10: (High flatness) film Capacitor 11: Base 12: Support member 13: Fixing member 14: Spring member 15: Capacitor lead 16: Exterior insulating material 17: Flow path (first flow path)
18: Channel (second channel)
19: opening 20: power semiconductor module 21, 29: power semiconductor module lead 22: first electrode 23: second electrode 24: sealing member 27: high heat conduction member 28: space 30: elastic member (silicone rubber sheet)
31: Insulation

Claims (9)

A power semiconductor module that converts direct current and alternating current is accommodated in a first chamber of a housing in which a plurality of rooms are formed, and a flat film capacitor that smoothes a direct current voltage is accommodated in a second chamber, and the power semiconductor The module and the flat film capacitor are electrically connected by a conductor plate, and the conductor plate is fixed to the housing,
The flat film capacitor is placed on a pedestal member in a second room with the flat surface up and down, the upper flat surface is in contact with the conductive plate, and the conductive plate is fixed to the casing, Pressed and fixed between the base members ,
The conductor plate is composed of three layers of a P-pole conductor, a conductor fixing material, and an N-pole conductor. The P-pole conductor and the N-pole conductor are insulated by the conductor fixing material, and the conductor plate is a part of the conductor fixing material. Is fixed to the support member at several points by a fixing member such as a screw and a spring member, whereby the conductor plate presses the flat film capacitor from above . A power semiconductor module that converts direct current and alternating current is housed in a first chamber of a housing having a plurality of chambers, and a wound flat film capacitor that smoothes direct current voltage is housed in a second chamber. The power semiconductor module and the flat film capacitor are electrically connected by a conductor plate, and the conductor plate is fixed to the housing,
The flat film capacitor is placed on a pedestal member in a second room with the flat surface up and down, the upper flat surface is in contact with the conductive plate, and the conductive plate is fixed to the casing, A power conversion device characterized in that it is pressed and fixed between pedestal members, and its upper surface is pressed and fixed to the conductor plate via a first inclusion. The power conversion device according to claim 1 or 2 , wherein
The flat film capacitor has a lower surface placed on the pedestal via a second inclusion, and is a power conversion device. The power conversion device according to claim 2 ,
The power converter according to claim 1, wherein the first inclusion is an elastic member. The power conversion device according to claim 2 ,
The power converter is characterized in that the first inclusion is a heat insulating material. The power conversion device according to claim 3 ,
The power converter according to claim 2, wherein the second inclusion is a high thermal conductive sheet. The power conversion device according to any one of claims 1 to 6 ,
A power conversion device, wherein a flow path through which a cooling refrigerant for removing heat generated by the power semiconductor module and the flat film capacitor housed in a room formed in the housing flows is formed. The power conversion device according to any one of claims 1 to 7 ,
The flat film capacitor is a flat film capacitor formed by laminating a large number of organic dielectric films. The power conversion device according to any one of claims 1 to 7,
  A power conversion device, wherein the flat film capacitor is a wound film capacitor.

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