JP5292823B2 - Power converter - Google Patents

Power converter Download PDF

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JP5292823B2
JP5292823B2 JP2008011141A JP2008011141A JP5292823B2 JP 5292823 B2 JP5292823 B2 JP 5292823B2 JP 2008011141 A JP2008011141 A JP 2008011141A JP 2008011141 A JP2008011141 A JP 2008011141A JP 5292823 B2 JP5292823 B2 JP 5292823B2
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terminal member
chamber
power converter
capacitor element
element body
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JP2009177872A (en
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知也 今津
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Nissan Motor Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/02Mountings
    • H01G2/04Mountings specially adapted for mounting on a chassis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/08Cooling arrangements; Heating arrangements; Ventilating arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02TCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00Road transport of goods or passengers
    • Y02T10/60Other road transportation technologies with climate change mitigation effect
    • Y02T10/70Energy storage systems for electromobility, e.g. batteries

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inverter Devices (AREA)

Description

本発明は、電気自動車等に用いられる電力変換装置および電力変換装置の製造方法に関する。   The present invention relates to a power conversion device used in an electric vehicle or the like and a method for manufacturing the power conversion device.

この種の電力変換装置として、従来、ヒートシンクの表面にIGBTや電解コンデンサ等の電気部品を装着し、これら電気部品をヒートシンクによって冷却するようにしたものがある(例えば特許文献1参照)。電解コンデンサは、表面に酸化皮膜が形成されたコンデンサ素子本体を電解液に浸して構成されるものであり、特許文献1記載の装置では、電解コンデンサのケースをヒートシンクにマウントしている。   As this type of power conversion device, there is a conventional device in which electrical components such as IGBTs and electrolytic capacitors are mounted on the surface of a heat sink, and these electrical components are cooled by the heat sink (see, for example, Patent Document 1). The electrolytic capacitor is configured by immersing a capacitor element body having an oxide film formed on the surface thereof in an electrolytic solution. In the apparatus described in Patent Document 1, the case of the electrolytic capacitor is mounted on a heat sink.

特開平11−18429号公報Japanese Patent Laid-Open No. 11-18429

しかしながら、上記特許文献1記載の装置では、電解コンデンサのケースをヒートシンクにマウントするため、電解コンデンサの内部を効率よく冷却することができない。   However, in the apparatus described in Patent Document 1, since the electrolytic capacitor case is mounted on a heat sink, the inside of the electrolytic capacitor cannot be efficiently cooled.

本発明による電力変換装置は、電力変換用の半導体素子と、半導体素子が収容される第1の室および電解液が封入される第2の室が設けられた電気絶縁性を有するケース部材と、第2の室内に収容され、電解液に浸漬されたコンデンサ素子本体と、第1の室および第2の室を密閉する蓋体と、半導体素子およびコンデンサ素子本体を冷却するヒートシンクと、半導体素子に接続される導電性の第1の端子部材と、コンデンサ素子本体に接続される導電性の第2の端子部材と、第1の端子部材と第2の端子部材を接続する接続手段と、ケース部材の底面に設けられたベースプレートを備え、第1の端子部材及び第2の端子部材は、ベースプレートの表面に沿って延設される延設部と、延設部から折れ曲がり前記ベースプレートの表面に対して立ち上がる立ち上げ部を、それぞれ有し、第1の端子部材の立ち上げ部と第2の端子部材の立ち上げ部は、互いに向かい合い、接続手段は、第1の端子部材の立ち上げ部と第2の端子部材の立ち上げ部を接続することを特徴とする。
A power conversion device according to the present invention includes an electrically insulating case member provided with a semiconductor element for power conversion, a first chamber in which the semiconductor element is accommodated, and a second chamber in which an electrolytic solution is enclosed. A capacitor element body housed in the second chamber and immersed in the electrolyte, a lid for sealing the first chamber and the second chamber, a heat sink for cooling the semiconductor element and the capacitor element body, and a semiconductor element a first terminal member electrically conductive to be connected, and a second terminal member electrically conductive to be connected to the capacitor element body, a first terminal member and connecting to the connecting means the second terminal member, A base plate is provided on the bottom surface of the case member, and the first terminal member and the second terminal member extend along the surface of the base plate, and are bent from the extended portion to the surface of the base plate. Against The rising portions of the first terminal member and the rising portion of the second terminal member face each other, and the connecting means includes the rising portion of the first terminal member and the second rising portion. The rising portion of the terminal member is connected .

本発明によれば、電解コンデンサのケースを介さずにコンデンサ素子本体を電力変換装置のケース部材内に収容することができ、電解コンデンサの内部を効率よく冷却することができる。   ADVANTAGE OF THE INVENTION According to this invention, a capacitor | condenser element main body can be accommodated in the case member of a power converter device without passing through the case of an electrolytic capacitor, and the inside of an electrolytic capacitor can be cooled efficiently.

以下、図1〜図5を参照して本発明による電力変換装置の一実施の形態について説明する。
図1は、本実施の形態に係る電力変換装置の内部構成を示す平面図であり、図2は、側面図、図3は、電力変換装置の電気回路図である。この電力変換装置は電気自動車に搭載される3相インバータを構成し、IGBTとダイオードを用いて直流P,Nを交流U,V,Wに変換する。なお、図1〜図3は3相インバータの一部(例えばU相インバータ)の構成を示しており、V相、W相のインバータもこれと同様に構成される。本実施の形態では各相毎に半導体モジュールを構成するが、U相,V相,W相を一体の半導体モジュールとしてもよい。
Hereinafter, with reference to FIGS. 1-5, one Embodiment of the power converter device by this invention is described.
FIG. 1 is a plan view showing the internal configuration of the power converter according to the present embodiment, FIG. 2 is a side view, and FIG. 3 is an electric circuit diagram of the power converter. This power conversion device constitutes a three-phase inverter mounted on an electric vehicle, and converts direct currents P and N into alternating currents U, V, and W using an IGBT and a diode. 1 to 3 show a configuration of a part of a three-phase inverter (for example, a U-phase inverter), and V-phase and W-phase inverters are configured in the same manner. In the present embodiment, a semiconductor module is configured for each phase, but the U phase, the V phase, and the W phase may be integrated into a single semiconductor module.

図3に示すようにIGBT1のコレクタ(ドレイン)はP極用ブスバー5に接続され、IGBT2のエミッタ(ソース)はN極用ブスバー6に接続されている。IGBT1のエミッタおよびIGBT2のコレクタはそれぞれU相出力用ブスバー7に接続されている。IGBT1,2には、それぞれダイオード3,4が並列に接続され、ブスバー5,6には電解コンデンサ8が接続されている。なお、IGBT1,2とダイオード3,4の代わりに、トランジスタやサイリスタ等の半導体素子を用いることもできる。   As shown in FIG. 3, the collector (drain) of the IGBT 1 is connected to the P-pole bus bar 5, and the emitter (source) of the IGBT 2 is connected to the N-pole bus bar 6. The emitter of IGBT1 and the collector of IGBT2 are connected to U-phase output bus bar 7, respectively. Diodes 3 and 4 are connected in parallel to the IGBTs 1 and 2, respectively, and electrolytic capacitors 8 are connected to the bus bars 5 and 6. A semiconductor element such as a transistor or a thyristor can be used in place of the IGBTs 1 and 2 and the diodes 3 and 4.

図3に示した各部品は、樹脂モールドにより形成されたケース10内に収容される。図1,2に示すように、ケース10は、中央の隔壁11によって半導体室12Aとコンデンサ室12Bの2室に分割されている。ケース10の底面には、熱伝導性のよい金属製のベースプレート19(例えば銅板)が設けられている。ベースプレート19はケース10に一体成形されている。   Each component shown in FIG. 3 is accommodated in a case 10 formed of a resin mold. As shown in FIGS. 1 and 2, the case 10 is divided into two chambers, a semiconductor chamber 12 </ b> A and a capacitor chamber 12 </ b> B, by a central partition wall 11. A metal base plate 19 (for example, a copper plate) having good thermal conductivity is provided on the bottom surface of the case 10. The base plate 19 is integrally formed with the case 10.

半導体室12Aの床面には、一体成型により導電性の金属板(例えば銅板)13A〜13Cが配設されている。金属板13Bと金属板13Cはケース10の長さ方向に並設され、金属板13Aと金属板13B,13Cはケース10の幅方向に並設されている。金属板13A〜13Cの側方にはそれぞれブスバー5〜7が設けられ、ブスバー5〜7の一端部はそれぞれ金属板13A〜13Cに接続されている。ブスバー5,6の他端部は、ケース10の隔壁11を上下方向に貫通し、ブスバー7の他端部はケース10の側壁を水平方向に貫通している。   Conductive metal plates (for example, copper plates) 13A to 13C are disposed on the floor surface of the semiconductor chamber 12A by integral molding. The metal plate 13B and the metal plate 13C are juxtaposed in the length direction of the case 10, and the metal plate 13A and the metal plates 13B and 13C are juxtaposed in the width direction of the case 10. Bus bars 5 to 7 are provided on the sides of the metal plates 13A to 13C, respectively, and one ends of the bus bars 5 to 7 are connected to the metal plates 13A to 13C, respectively. The other ends of the bus bars 5 and 6 penetrate the partition wall 11 of the case 10 in the vertical direction, and the other ends of the bus bars 7 penetrate the side walls of the case 10 in the horizontal direction.

IGBT1,2のチップ裏面側(ケース床面側)にはそれぞれコレクタ用電極が形成され、チップ表面側にはそれぞれエミッタ用電極およびゲート用電極が形成されている。また、ダイオード3,4のチップ裏面側にはそれぞれカソード用電極が形成され、チップ表面側にはそれぞれアノード用電極が形成されている。図2に示すようにIGBT1とダイオード3は、導電性の接合材(例えばはんだや導電性接着剤)を介してそれぞれ金属板13Aに面接合され、IGBT2とダイオード4は、同じく導電性の金属板を介してそれぞれ板部材13Cに面接合されている。   Collector electrodes are formed on the back side (case floor side) of the IGBTs 1 and 2 respectively, and an emitter electrode and a gate electrode are formed on the chip front side. In addition, a cathode electrode is formed on the chip back surface side of each of the diodes 3 and 4, and an anode electrode is formed on each chip surface side. As shown in FIG. 2, the IGBT 1 and the diode 3 are surface-bonded to the metal plate 13A via a conductive bonding material (for example, solder or conductive adhesive), and the IGBT 2 and the diode 4 are similarly conductive metal plates. Are respectively joined to the plate member 13C.

IGBT1とダイオード3は、それぞれボンディングワイヤにより金属板13C(ブスバー7)に接続され、IGBT2とダイオード4は、それぞれボンディングワイヤにより金属板13B(ブスバー6)に接続されている。図1に示すように半導体室12Aの周縁には段部10aが形成され、段部10aにケース床面を覆うように制御基板9が支持されている。制御基板9にはそれぞれIGBT1,2とダイオード3,4が接続され、制御基板9とこれら半導体素子1〜4の間の空間には、シリコンゲルやエポキシ樹脂等の絶縁封止材21が封入されている。   The IGBT 1 and the diode 3 are respectively connected to the metal plate 13C (bus bar 7) by a bonding wire, and the IGBT 2 and the diode 4 are respectively connected to the metal plate 13B (bus bar 6) by a bonding wire. As shown in FIG. 1, a step portion 10a is formed at the periphery of the semiconductor chamber 12A, and a control substrate 9 is supported by the step portion 10a so as to cover the case floor surface. IGBTs 1 and 2 and diodes 3 and 4 are connected to the control board 9, respectively, and an insulating sealing material 21 such as silicon gel or epoxy resin is sealed in the space between the control board 9 and these semiconductor elements 1 to 4. ing.

ケース10の上面には、半導体室12Aを覆うようにボルト14Aによって蓋体15Aが装着されるとともに、コンデンサ室12Bを覆うようにボルト14Bによって蓋体15Bが装着されている。図2に示すようにケース10の縁部および中央部には、それぞれケース取付用の貫通孔10bが開口され、この貫通孔10bを介して図1に示すようにケース10はボルト16によってヒートシンク17に装着されている。ヒートシンク17の内部には冷却水用の流路(不図示)が形成され、冷却水の流れによってケース内の半導体素子1〜4と電解コンデンサ8がそれぞれ冷却される。   A lid 15A is attached to the upper surface of the case 10 with bolts 14A so as to cover the semiconductor chamber 12A, and a lid 15B is attached with bolts 14B so as to cover the capacitor chamber 12B. As shown in FIG. 2, through-holes 10b for attaching the case are respectively opened at the edge and the center of the case 10, and the case 10 is heat-sinked 17 by bolts 16 through the through-holes 10b as shown in FIG. It is attached to. A flow path (not shown) for cooling water is formed inside the heat sink 17, and the semiconductor elements 1 to 4 and the electrolytic capacitor 8 in the case are cooled by the flow of the cooling water.

本実施の形態では、電解コンデンサ8を効率よく冷却するために以下のように構成する。図4(a)は、電解コンデンサ8の要部構成を示す斜視図である。電解コンデンサ8はアルミニウム電解コンデンサであり、酸化皮膜が形成されたアルミ箔をロール状に巻き取ってコンデンサ素子本体80を形成し、このコンデンサ素子本体80を電解液81が充填されたコンデンサ室12Bに収容して構成される。   In the present embodiment, the following configuration is provided in order to efficiently cool the electrolytic capacitor 8. FIG. 4A is a perspective view showing a main configuration of the electrolytic capacitor 8. The electrolytic capacitor 8 is an aluminum electrolytic capacitor, and an aluminum foil on which an oxide film is formed is rolled up to form a capacitor element body 80. The capacitor element body 80 is placed in a capacitor chamber 12B filled with an electrolyte solution 81. Contained and configured.

コンデンサ室12Bの床面には樹脂材を介して導電性の金属板82が配設されている。金属板82の上面には、扁平形状のコンデンサ素子本体80が設置され、その上面に導電性の金属板83が設置され、コンデンサ素子本体80は金属板82,83により挟まれている。コンデンサ素子本体80の端部からは、それぞれプラスおよびマイナスのリード線84a、84bが突設され、このリード線84a、84bの端部が金属板82,83にそれぞれ接続されている。   A conductive metal plate 82 is disposed on the floor surface of the capacitor chamber 12B via a resin material. A flat capacitor element body 80 is installed on the upper surface of the metal plate 82, and a conductive metal plate 83 is installed on the upper surface thereof. The capacitor element body 80 is sandwiched between the metal plates 82 and 83. Positive and negative lead wires 84a and 84b project from the end portion of the capacitor element body 80, and the end portions of the lead wires 84a and 84b are connected to the metal plates 82 and 83, respectively.

下側の金属板82の側方には、ブスバー5の水平方向延長上において、ブスバー5と略同一幅のブスバー85が設けられ、金属板82にブスバー85が接続されている。なお、金属板82とブスバー85を一体に設けることもできる。ブスバー85は、ケース隔壁11に向けて延設された後、上方に向けて折り曲げられ、その端部はブスバー5に対向して立ち上がっている。   On the side of the lower metal plate 82, a bus bar 85 having substantially the same width as the bus bar 5 is provided on the horizontal extension of the bus bar 5, and the bus bar 85 is connected to the metal plate 82. Note that the metal plate 82 and the bus bar 85 may be provided integrally. The bus bar 85 extends toward the case partition wall 11, and then is bent upward, and an end portion of the bus bar 85 is opposed to the bus bar 5.

上側の金属板83の側方には、ブスバー6の水平方向延長上において、ブスバー6と略同一幅のブスバー86が設けられ、金属板83にブスバー86が接続されている。なお、金属板83とブスバー86を一体に設けることもできる。ブスバー86は、下方に向けて延設された後、略水平に折り曲げられてケース隔壁11に向けて延設され、さらに上方に折り曲げられて、その端部はブスバー6に対向して立ち上がっている。   On the side of the upper metal plate 83, a bus bar 86 having substantially the same width as the bus bar 6 is provided on the horizontal extension of the bus bar 6, and the bus bar 86 is connected to the metal plate 83. Note that the metal plate 83 and the bus bar 86 may be provided integrally. After extending downward, the bus bar 86 is bent substantially horizontally, extended toward the case partition wall 11, and further bent upward. The end of the bus bar 86 stands up against the bus bar 6. .

図4(b)はケース隔壁11の断面図である。図4(b)に示すようにブスバー5,6およびブスバー85,86はそれぞれ隔壁11を上下方向に貫通し、その端部は隔壁11の上端部から突出している。隔壁11の内部では、ブスバー5,6とブスバー85,86は互いに離間し、隔壁11の上方では、ブスバー5,6とブスバー85,86の間に電気絶縁材であるスペーサ87が挟持されて、ブスバー5,6とブスバー85,86は絶縁されている。   FIG. 4B is a cross-sectional view of the case partition wall 11. As shown in FIG. 4B, the bus bars 5, 6 and the bus bars 85, 86 penetrate the partition wall 11 in the vertical direction, and their end portions protrude from the upper end portion of the partition wall 11. Inside the partition wall 11, the bus bars 5, 6 and the bus bars 85, 86 are separated from each other, and above the partition wall 11, a spacer 87 that is an electrical insulating material is sandwiched between the bus bars 5, 6 and the bus bars 85, 86, The bus bars 5 and 6 and the bus bars 85 and 86 are insulated.

ブスバー5,6,85,86の上端部にはそれぞれ貫通孔hが開口されている。各貫通孔hにボルト88が挿通され、ボルト88にナット89が螺合して、ブスバー5,6とブスバー85,86が互いに締結されている。これによりブスバー5,6とブスバー85,86が、ボルト88、ナット89を介して電気的に接続される。   Through holes h are opened at the upper ends of the bus bars 5, 6, 85, 86, respectively. Bolts 88 are inserted into the respective through holes h, nuts 89 are screwed into the bolts 88, and the bus bars 5, 6 and the bus bars 85, 86 are fastened to each other. Thereby, the bus bars 5 and 6 and the bus bars 85 and 86 are electrically connected via the bolts 88 and the nuts 89.

本実施の形態に係る電力変換装置の製造方法、とくに電解コンデンサ8の製造方法について説明する。
(1)エッチング
まず、コンデンサ素子本体80の素材であるアルミ箔の表面積を増加させるためにエッチングを行う。エッチングは、例えば塩化物水溶液中で電流を印可してアルミ箔表面を溶解する工程であり、これによりアルミ箔の表面を粗面化し、表面積を増加させる。
A method for manufacturing the power conversion device according to the present embodiment, in particular, a method for manufacturing the electrolytic capacitor 8 will be described.
(1) Etching First, etching is performed to increase the surface area of the aluminum foil that is the material of the capacitor element body 80. Etching is a process of applying an electric current in an aqueous chloride solution to dissolve the surface of the aluminum foil, thereby roughening the surface of the aluminum foil and increasing the surface area.

(2)化成
エッチングされたアルミ箔を所定の電解液(例えばホウ酸やリン酸等のアンモニウム水溶液)に浸漬し、エッチング箔をプラス、水溶液をマイナスとした電気分解を行う。これにより電気化学的にアルミ箔の表面に誘電体となる酸化アルミの被膜を形成する。
(2) Chemical conversion The etched aluminum foil is immersed in a predetermined electrolytic solution (for example, an aqueous ammonium solution such as boric acid or phosphoric acid), and electrolysis is performed using the etching foil as a plus and the aqueous solution as a minus. Thus, an aluminum oxide film serving as a dielectric is electrochemically formed on the surface of the aluminum foil.

(3)巻き取り
化成処理した陽極用のアルミ箔および化成処理していない陰極用のアルミ箔にそれぞれリード線84a,84bを接続し、セパレータ紙を介して各アルミ箔を円筒形に巻回する。これによりコンデンサ素子本体80が形成される。
(3) Winding Connect lead wires 84a and 84b to the aluminum foil for the anode subjected to chemical conversion treatment and the aluminum foil for the cathode not subjected to chemical conversion treatment, respectively, and wind each aluminum foil into a cylindrical shape via a separator paper. . Thereby, the capacitor element body 80 is formed.

(4)組立
コンデンサ素子本体80をプレス機によりプレスして扁平形状とする。その後、コンデンサ素子本体80を金属板82上に設置し、リード端子84aと接続するとともに、コンデンサ素子本体80の上面に金属板83を設置し、リード端子84bと接続する。さらに、コンデンサ素子本体80をコンデンサ室12Bに収容し、金属板82,83とブスバー85,86を接続する。なお、金属板82,83とブスバー85,86を先に接続してからコンデンサ素子本体80をコンデンサ室12Bに収容することもできる。
(4) Assembly The capacitor element body 80 is pressed into a flat shape by a press. Thereafter, the capacitor element body 80 is placed on the metal plate 82 and connected to the lead terminal 84a, and the metal plate 83 is placed on the upper surface of the capacitor element body 80 and connected to the lead terminal 84b. Further, the capacitor element body 80 is accommodated in the capacitor chamber 12B, and the metal plates 82 and 83 and the bus bars 85 and 86 are connected. The capacitor element body 80 can be accommodated in the capacitor chamber 12B after the metal plates 82 and 83 and the bus bars 85 and 86 are connected first.

(5)含浸
以上のように構成されたコンデンサ素子本体80に、真空含浸、減圧含浸、ディップ含浸等により電解液81をしみこませる。電解液81は、化成処理で用いた電解液とは異なり、例えばエチレングリコール、グリセリン等の多価アルコール類を主溶媒とし、これにホウ酸アンモニウム、有機酸アンモニウム等を溶質としたものを用いる。
(5) Impregnation The electrolytic solution 81 is soaked into the capacitor element body 80 configured as described above by vacuum impregnation, reduced pressure impregnation, dip impregnation or the like. Unlike the electrolytic solution used in the chemical conversion treatment, the electrolytic solution 81 uses, for example, a polyhydric alcohol such as ethylene glycol or glycerin as a main solvent and a solute of ammonium borate, organic acid ammonium, or the like.

(6)密封
コンデンサ室12Bに電解液81を満たした状態で、ケース10に蓋体15Bを取り付け、コンデンサ室12Bを密封する。図2に示すように金属板83と蓋体15Bの間には板ばね18が介装され、蓋体15Bを取り付けると、板ばね18によってコンデンサ素子本体80が下方に押圧され、コンデンサ素子本体80がケース10の床面を介してベースプレート19に密着する。これにより電解コンデンサ8が完成する。
(6) Sealing With the capacitor chamber 12B filled with the electrolytic solution 81, a lid 15B is attached to the case 10 to seal the capacitor chamber 12B. As shown in FIG. 2, a leaf spring 18 is interposed between the metal plate 83 and the lid body 15B. When the lid body 15B is attached, the capacitor element body 80 is pressed downward by the leaf spring 18, and the capacitor element body 80 Adheres to the base plate 19 through the floor of the case 10. Thereby, the electrolytic capacitor 8 is completed.

(7)再化成
ボルト88の取付前、すなわちブスバー5,6とブスバー85,86を開離した状態で、ブスバー85,86間に所定の電圧を印可し、電解コンデンサ8の再化成を行う。これにより酸化皮膜の欠陥部分を修復し、電解コンデンサ8の特性を安定化させる。同時に耐電圧の確認を行い、初期不良をチェックする。
(7) Re-forming Before the bolt 88 is attached, that is, in a state where the bus bars 5 and 6 and the bus bars 85 and 86 are separated, a predetermined voltage is applied between the bus bars 85 and 86 to re-form the electrolytic capacitor 8. As a result, the defective portion of the oxide film is repaired, and the characteristics of the electrolytic capacitor 8 are stabilized. At the same time, withstand voltage is checked to check for initial failure.

(8)ブスバーの接続
最後に、ブスバー5,6とブスバー85,86をボルト88、ナット89で締結し、これらを電気的に接続する。以上で、電解コンデンサ8の製造、取付が完了する。
(8) Busbar connection Finally, the busbars 5 and 6 and the busbars 85 and 86 are fastened with bolts 88 and nuts 89 to electrically connect them. Thus, the manufacture and attachment of the electrolytic capacitor 8 are completed.

本実施の形態によれば以下のような作用効果を奏することができる。
(1)ケース10のコンデンサ室12Bに電解液81を封入してコンデンサ素子本体80を収容するようにした。すなわち電力変換装置の樹脂ケース10を電解コンデンサの金属ケースの代わりに用いるようにした。これにより電解コンデンサの金属ケースを省略することができ、金属ケースを介さずにコンデンサ素子本体80を冷却することができるため、金属ケースに収容された電解コンデンサを樹脂ケース内に設ける場合に比べ、電解コンデンサの冷却効率を高めることができる。
According to the present embodiment, the following operational effects can be achieved.
(1) The electrolytic solution 81 is sealed in the capacitor chamber 12B of the case 10 so that the capacitor element body 80 is accommodated. That is, the resin case 10 of the power converter is used instead of the metal case of the electrolytic capacitor. As a result, the metal case of the electrolytic capacitor can be omitted, and the capacitor element body 80 can be cooled without going through the metal case. The cooling efficiency of the electrolytic capacitor can be increased.

(2)半導体素子1〜4に接続されたブスバー5,6とコンデンサ素子本体80に接続されたブスバー85,86をボルト88、ナット89により締結するので、ブスバー5,6とブスバー85,86を容易に接続、開離することができる。このため、電解コンデンサ8を完成させた状態で電解コンデンサ8のみに電圧を印可する工程、つまり電解コンデンサ8の再化成が可能になる。すなわちブスバー5,6と85,86を開離できない場合には、電解コンデンサ8だけでなく半導体素子1〜4にも電圧が印可されるため、電解コンデンサ8の再化成が困難であるが、本実施の形態のようにブスバー5,6と85,86を開離可能とすることで、電解コンデンサ8の再化成が容易になる。 (2) Since the bus bars 5 and 6 connected to the semiconductor elements 1 to 4 and the bus bars 85 and 86 connected to the capacitor element body 80 are fastened by bolts 88 and nuts 89, the bus bars 5 and 6 and the bus bars 85 and 86 are connected. Can be easily connected and disconnected. For this reason, the process of applying a voltage only to the electrolytic capacitor 8 with the electrolytic capacitor 8 completed, that is, the electrolytic capacitor 8 can be re-formed. That is, when the bus bars 5, 6 and 85, 86 cannot be separated, voltage is applied not only to the electrolytic capacitor 8 but also to the semiconductor elements 1 to 4, so that it is difficult to re-form the electrolytic capacitor 8. By making the bus bars 5, 6 and 85, 86 separable as in the embodiment, the electrolytic capacitor 8 can be easily re-formed.

(3)電解コンデンサ8の金属ケースを省略できるので、装置全体を小型化することができる。
(4)隔壁11を貫通してブスバー5,6とブスバー85,86を互いに対向して設けるようにした。これによりブスバー5,6と85,86の電気の流れによる相互インダクタンスが互いにキャンセルされ、インダクタンスを低減することができ、インバータのようなスイッチング装置に用いて好適である。
(5)ブスバー5,6と85,86をボルト88で締結するので、再化成処理後のブスバーの接続が容易である。
(6)半導体室12Aとコンデンサ室12Bを別々の蓋15A,15Bによって密閉するので、半導体室内への絶縁封止材21の封入とコンデンサ室内への電解液81の封入を別々に行うことができ、作業が容易である。
(7)コンデンサ素子本体80を板ばね18によってヒートシンク17側に押圧するので、コンデンサ素子本体をベースプレート19を介してヒートシンク17に密着することができ、電解コンデンサ8の放熱性を高めることができる。
(8)コンデンサ素子本体80をプレス成形により扁平形状とするので、コンデンサ素子本体80をコンデンサ室12B内に効率よく収容することができる。
(3) Since the metal case of the electrolytic capacitor 8 can be omitted, the entire apparatus can be reduced in size.
(4) The bus bars 5, 6 and the bus bars 85, 86 are provided so as to face each other through the partition wall 11. As a result, the mutual inductances due to the electric flow of the bus bars 5, 6 and 85, 86 are canceled out, and the inductance can be reduced, which is suitable for use in a switching device such as an inverter.
(5) Since the bus bars 5, 6 and 85, 86 are fastened by the bolts 88, it is easy to connect the bus bars after the re-forming process.
(6) Since the semiconductor chamber 12A and the capacitor chamber 12B are sealed by separate lids 15A and 15B, the insulating sealing material 21 can be sealed in the semiconductor chamber and the electrolytic solution 81 can be sealed in the capacitor chamber separately. Easy to work.
(7) Since the capacitor element body 80 is pressed against the heat sink 17 by the leaf spring 18, the capacitor element body can be brought into close contact with the heat sink 17 via the base plate 19, and the heat dissipation of the electrolytic capacitor 8 can be improved.
(8) Since the capacitor element body 80 is flattened by press molding, the capacitor element body 80 can be efficiently accommodated in the capacitor chamber 12B.

なお、上記実施の形態では、樹脂ケース10の半導体室12AにIGBT1,2とダイオード3,4を収容固定したが、電力変換用の半導体素子の構成はこれに限らない。ケース10に半導体室12A(第1の室)とコンデンサ室12B(第2の室)を設けてパワーモジュールを構成するようにしたが、ケース部材としてのケース10の構成は上述したものに限らない。例えば図5に示すようにケース取付用の貫通孔10bの位置を変更したものであってもよい。コンデンサ室内の電解液81にコンデンサ素子本体80を浸漬するのであれば、電解コンデンサの構成はいかなるものでもよく、アルミ電解コンデンサ以外でもよい。   In the above embodiment, the IGBTs 1 and 2 and the diodes 3 and 4 are accommodated and fixed in the semiconductor chamber 12A of the resin case 10, but the configuration of the semiconductor element for power conversion is not limited to this. Although the power module is configured by providing the semiconductor chamber 12A (first chamber) and the capacitor chamber 12B (second chamber) in the case 10, the configuration of the case 10 as the case member is not limited to the above. . For example, as shown in FIG. 5, the position of the through hole 10b for attaching the case may be changed. As long as the capacitor element body 80 is immersed in the electrolytic solution 81 in the capacitor chamber, the electrolytic capacitor may have any configuration, and may be other than the aluminum electrolytic capacitor.

半導体室12Aを密閉する蓋体15A(第1の蓋体)とコンデンサ室12Bを密閉する蓋体15B(第2の蓋体)を別々に設けたが、一体に設けてもよい。半導体素子1〜4に接続されるブスバー5,6(第1の端子部材)およびコンデンサ素子本体80に接続されるブスバー85,86(第2の端子部材)の構成はいかなるものでもよい。ブスバー5,6とブスバー85,86をケース10の外側で締結部材としてのボルト88により接続するようにしたが、接続手段はこれに限らない。板ばね18によりコンデンサ素子本体80を押圧するようにしたが、他の押圧部材を用いてもよい。   The lid 15A (first lid) that seals the semiconductor chamber 12A and the lid 15B (second lid) that seals the capacitor chamber 12B are provided separately, but they may be provided integrally. The bus bars 5 and 6 (first terminal member) connected to the semiconductor elements 1 to 4 and the bus bars 85 and 86 (second terminal member) connected to the capacitor element body 80 may be of any configuration. The bus bars 5 and 6 and the bus bars 85 and 86 are connected by the bolt 88 as a fastening member outside the case 10, but the connecting means is not limited to this. Although the capacitor element body 80 is pressed by the leaf spring 18, other pressing members may be used.

以上では、電気自動車用のインバータとしての電力変換装置に適用する場合について説明したが、電解コンデンサを有する他の電力変換装置にも本発明は適用できる。すなわち本発明の特徴、機能を実現できる限り、本発明は実施の形態の電力変換装置に限定されない。   Although the case where it applies to the power converter device as an inverter for electric vehicles was demonstrated above, this invention is applicable also to the other power converter device which has an electrolytic capacitor. That is, the present invention is not limited to the power conversion device of the embodiment as long as the features and functions of the present invention can be realized.

本発明の実施の形態に係る電力変換装置の内部構成を示す平面図。The top view which shows the internal structure of the power converter device which concerns on embodiment of this invention. 本発明の実施の形態に係る電力変換装置の内部構成を示す側面図。The side view which shows the internal structure of the power converter device which concerns on embodiment of this invention. 本発明の実施の形態に係る電力変換装置の電気回路図。The electric circuit diagram of the power converter device which concerns on embodiment of this invention. (a)は図1の電解コンデンサの要部構成を示す斜視図、(b)は図4(a)の要部断面図。(A) is a perspective view which shows the principal part structure of the electrolytic capacitor of FIG. 1, (b) is principal part sectional drawing of Fig.4 (a). 図1の変形例を示す図。The figure which shows the modification of FIG.

符号の説明Explanation of symbols

1,2 IGBT
3,4 ダイオード
5〜7 ブスバー
8 電解コンデンサ
10 樹脂ケース
11 隔壁
12A 半導体室
12B コンデンサ室
15A,15B 蓋体
17 ヒートシンク
18 板ばね
80 コンデンサ素子本体
81 電解液
85,86 ブスバー
88 ボルト
89 ナット
1, 2 IGBT
3, 4 Diode 5-7 Bus bar 8 Electrolytic capacitor 10 Resin case 11 Partition 12A Semiconductor chamber 12B Capacitor chamber 15A, 15B Lid 17 Heat sink 18 Leaf spring 80 Capacitor element body 81 Electrolytic solution 85, 86 Bus bar 88 Bolt 89 Nut

Claims (6)

電力変換用の半導体素子と、
前記半導体素子が収容される第1の室および電解液が封入される第2の室が設けられた電気絶縁性を有するケース部材と、
前記第2の室内に収容され、電解液に浸漬されたコンデンサ素子本体と、
前記第1の室および前記第2の室を密閉する蓋体と、
前記半導体素子および前記コンデンサ素子本体を冷却するヒートシンクと、
前記半導体素子に接続される導電性の第1の端子部材と、
前記コンデンサ素子本体に接続される導電性の第2の端子部材と、
前記第1の端子部材と前記第2の端子部材を接続する接続手段と、
前記ケース部材の底面に設けられたベースプレートを備え、
前記第1の端子部材及び前記第2の端子部材は、
前記ベースプレートの表面に沿って延設される延設部と、当該延設部から折れ曲がり前記ベースプレートの表面に対して立ち上がる立ち上げ部を、それぞれ有し、
前記第1の端子部材の前記立ち上げ部と前記第2の端子部材の前記立ち上げ部は、互いに向かい合い、
前記接続手段は、前記第1の端子部材の前記立ち上げ部と前記第2の端子部材の前記立ち上げ部を接続する
ことを特徴とする電力変換装置。
A semiconductor element for power conversion;
An electrically insulating case member provided with a first chamber in which the semiconductor element is accommodated and a second chamber in which an electrolytic solution is enclosed;
A capacitor element body housed in the second chamber and immersed in an electrolyte;
A lid for sealing the first chamber and the second chamber;
A heat sink for cooling the semiconductor element and the capacitor element body;
A conductive first terminal member connected to the semiconductor element;
A conductive second terminal member connected to the capacitor element body;
Said first terminal member and the second terminal member Connecting to the connecting means,
A base plate provided on the bottom surface of the case member;
The first terminal member and the second terminal member are:
An extending portion extending along the surface of the base plate, and a rising portion that is bent from the extending portion and rises with respect to the surface of the base plate,
The rising portion of the first terminal member and the rising portion of the second terminal member face each other,
The power converter according to claim 1, wherein the connecting means connects the rising portion of the first terminal member and the rising portion of the second terminal member .
請求項1に記載の電力変換装置において、
前記ケース部材は、前記第1の室と前記第2の室の間に隔壁を形成し、
前記第1の端子部材および前記第2の端子部材は、前記隔壁に沿って互いに対向して設けられる板状部材であることを特徴とする電力変換装置。
The power conversion device according to claim 1,
The case member forms a partition wall between the first chamber and the second chamber,
The power converter according to claim 1, wherein the first terminal member and the second terminal member are plate-like members provided to face each other along the partition wall.
請求項1または2に記載の電力変換装置において、
前記第1の端子部材の先端部と前記第2の端子部材の先端部は、それぞれ前記ケース部材の外側に突出して設けられ、
前記接続手段は、これら第1の端子部材の先端部と第2の端子部材の先端部を締結する締結部材を有することを特徴とする電力変換装置。
In the power converter device according to claim 1 or 2,
The distal end portion of the first terminal member and the distal end portion of the second terminal member are provided so as to protrude to the outside of the case member, respectively.
The connection means includes a fastening member that fastens the tip of the first terminal member and the tip of the second terminal member.
請求項1〜3のいずれか1項に記載の電力変換装置において、
前記蓋体は、前記第1の室を密閉する第1の蓋体と、前記第2の室を密閉する第2の蓋体とを有することを特徴とする電力変換装置。
In the power converter device according to any one of claims 1 to 3,
The said cover body has a 1st cover body which seals the said 1st chamber, and a 2nd cover body which seals the said 2nd chamber, The power converter device characterized by the above-mentioned.
請求項1〜4のいずれか1項に記載の電力変換装置において、
前記蓋体の取り付けにより、前記コンデンサ素子本体を前記ヒートシンク側に押圧する押圧部材を有することを特徴とする電力変換装置。
In the power converter device according to any one of claims 1 to 4,
A power conversion device comprising: a pressing member that presses the capacitor element body toward the heat sink by attaching the lid.
請求項1〜5のいずれか1項に記載の電力変換装置において、
前記コンデンサ素子本体は、表面に酸化皮膜が形成されたアルミニウム箔を巻回して構成されることを特徴とする電力変換装置。
In the power converter device according to any one of claims 1 to 5,
The capacitor element body is constituted by winding an aluminum foil having an oxide film formed on a surface thereof, and is a power conversion device.
JP2008011141A 2008-01-22 2008-01-22 Power converter Active JP5292823B2 (en)

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