JP5951589B2 - 光導波路素子 - Google Patents
光導波路素子 Download PDFInfo
- Publication number
- JP5951589B2 JP5951589B2 JP2013245782A JP2013245782A JP5951589B2 JP 5951589 B2 JP5951589 B2 JP 5951589B2 JP 2013245782 A JP2013245782 A JP 2013245782A JP 2013245782 A JP2013245782 A JP 2013245782A JP 5951589 B2 JP5951589 B2 JP 5951589B2
- Authority
- JP
- Japan
- Prior art keywords
- ridge portion
- thin layer
- optical waveguide
- ridge
- tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims description 60
- 239000010410 layer Substances 0.000 claims description 71
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 27
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 238000001039 wet etching Methods 0.000 claims description 15
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 14
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 13
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 10
- 230000000630 rising effect Effects 0.000 claims description 8
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 7
- COQOFRFYIDPFFH-UHFFFAOYSA-N [K].[Gd] Chemical compound [K].[Gd] COQOFRFYIDPFFH-UHFFFAOYSA-N 0.000 claims description 7
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 7
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052744 lithium Inorganic materials 0.000 claims description 6
- LXRWZZFNYNSWPB-UHFFFAOYSA-N potassium yttrium Chemical compound [K].[Y] LXRWZZFNYNSWPB-UHFFFAOYSA-N 0.000 claims description 6
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 6
- 239000011247 coating layer Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- -1 KOH and NaOH Chemical class 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AAQNGTNRWPXMPB-UHFFFAOYSA-N dipotassium;dioxido(dioxo)tungsten Chemical compound [K+].[K+].[O-][W]([O-])(=O)=O AAQNGTNRWPXMPB-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- OMRRUNXAWXNVFW-UHFFFAOYSA-N fluoridochlorine Chemical compound ClF OMRRUNXAWXNVFW-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
- G02F1/3503—Structural association of optical elements, e.g. lenses, with the non-linear optical device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013245782A JP5951589B2 (ja) | 2013-11-28 | 2013-11-28 | 光導波路素子 |
| US14/534,373 US10564513B2 (en) | 2013-11-28 | 2014-11-06 | Optical waveguide devices |
| TW103140004A TWI693438B (zh) | 2013-11-28 | 2014-11-19 | 光波導元件 |
| CN201410705957.6A CN104678494B (zh) | 2013-11-28 | 2014-11-27 | 光波导器件 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013245782A JP5951589B2 (ja) | 2013-11-28 | 2013-11-28 | 光導波路素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015102844A JP2015102844A (ja) | 2015-06-04 |
| JP2015102844A5 JP2015102844A5 (enExample) | 2015-07-16 |
| JP5951589B2 true JP5951589B2 (ja) | 2016-07-13 |
Family
ID=53182748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013245782A Active JP5951589B2 (ja) | 2013-11-28 | 2013-11-28 | 光導波路素子 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10564513B2 (enExample) |
| JP (1) | JP5951589B2 (enExample) |
| CN (1) | CN104678494B (enExample) |
| TW (1) | TWI693438B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106154426A (zh) * | 2016-06-30 | 2016-11-23 | 派尼尔科技(天津)有限公司 | 一种用于铌酸锂薄膜波导的耦合方式及其实现方法 |
| JP7037287B2 (ja) * | 2017-06-01 | 2022-03-16 | 株式会社フジクラ | 光導波路素子 |
| CN107505736B (zh) * | 2017-10-13 | 2019-11-08 | 上海交通大学 | 基于周期性极化铌酸锂脊型波导结构的电光偏振旋转器 |
| US10589255B1 (en) | 2018-10-11 | 2020-03-17 | Imam Abdulrahman Bin Faisal University | Tantalum vanadate nanorods and methods of their make and use |
| JP7160194B2 (ja) * | 2019-05-30 | 2022-10-25 | 日本電信電話株式会社 | 波長変換素子 |
| US12282214B2 (en) | 2019-11-27 | 2025-04-22 | HyperLight Corporation | Thin film lithium niobate optical device having an engineered substrate for heterogeneous integration |
| CN114981694B (zh) | 2019-11-27 | 2025-09-16 | 超光公司 | 具有工程化电极的电光器件 |
| CN115885208A (zh) * | 2020-06-02 | 2023-03-31 | 超光公司 | 高性能光调制器和驱动器 |
| CN112099286B (zh) * | 2020-09-29 | 2021-09-03 | 清华大学 | 光学谐波产生器及其制备方法 |
| US11940713B2 (en) * | 2020-11-10 | 2024-03-26 | International Business Machines Corporation | Active electro-optic quantum transducers comprising resonators with switchable nonlinearities |
| CN115145062A (zh) * | 2021-03-30 | 2022-10-04 | Tdk株式会社 | 光学器件 |
| CN114878505A (zh) * | 2022-07-11 | 2022-08-09 | 中国科学院长春光学精密机械与物理研究所 | 一种基于平面弯曲光波导的芯片式微型气室 |
| JPWO2024069952A1 (enExample) * | 2022-09-30 | 2024-04-04 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3874782A (en) * | 1973-10-01 | 1975-04-01 | Bell Telephone Labor Inc | Light-guiding switch, modulator and deflector employing antisotropic substrate |
| JP3848093B2 (ja) * | 2000-03-21 | 2006-11-22 | 松下電器産業株式会社 | 光導波路素子、光波長変換素子および光導波路素子の製造方法 |
| US6631231B2 (en) * | 2000-03-21 | 2003-10-07 | Matsushita Electric Industrial Co., Ltd. | Optical waveguide elements, optical wavelength conversion elements, and process for producing optical waveguide elements |
| US7469558B2 (en) * | 2001-07-10 | 2008-12-30 | Springworks, Llc | As-deposited planar optical waveguides with low scattering loss and methods for their manufacture |
| JP2003131182A (ja) | 2001-10-25 | 2003-05-08 | Mitsui Chemicals Inc | 光導波路型光素子およびその製造方法 |
| US7295742B2 (en) | 2002-05-31 | 2007-11-13 | Matsushita Electric Industrial Co., Ltd. | Optical element and method for producing the same |
| CN1936629A (zh) | 2002-05-31 | 2007-03-28 | 松下电器产业株式会社 | 光学元件的制造方法 |
| US8989523B2 (en) * | 2004-01-22 | 2015-03-24 | Vescent Photonics, Inc. | Liquid crystal waveguide for dynamically controlling polarized light |
| EP1801625B1 (en) * | 2004-10-12 | 2019-11-20 | NGK Insulators, Ltd. | Optical waveguide substrate and harmonics generating device |
| EP1873583B1 (en) | 2006-06-28 | 2009-11-04 | JDS Uniphase Corporation | A wafer scale method of manufacturing optical waveguide devices and the waveguide devices made thereby |
| JP5133571B2 (ja) * | 2007-01-25 | 2013-01-30 | 住友大阪セメント株式会社 | 放射モード光モニタ付導波路型光変調器 |
| ATE536565T1 (de) * | 2009-02-03 | 2011-12-15 | Optisense B V | Integrierter optischer sensor beruhend auf einem lichtwellenleiter-interferometer |
| JP5313198B2 (ja) * | 2010-03-30 | 2013-10-09 | 住友大阪セメント株式会社 | 導波路型偏光子 |
| JP2012078375A (ja) * | 2010-09-30 | 2012-04-19 | Sumitomo Osaka Cement Co Ltd | 光導波路素子 |
| CN103430084A (zh) * | 2011-03-17 | 2013-12-04 | 日本碍子株式会社 | 光调制元件 |
| TW201344265A (zh) | 2012-04-27 | 2013-11-01 | Hon Hai Prec Ind Co Ltd | 脊型y分支光波導結構的製作方法 |
| CN103383478A (zh) * | 2012-05-02 | 2013-11-06 | 鸿富锦精密工业(深圳)有限公司 | 脊型y分支光波导结构的制作方法 |
| US8900899B2 (en) * | 2012-07-02 | 2014-12-02 | Payam Rabiei | Method for production of optical waveguides and coupling and devices made from the same |
-
2013
- 2013-11-28 JP JP2013245782A patent/JP5951589B2/ja active Active
-
2014
- 2014-11-06 US US14/534,373 patent/US10564513B2/en active Active
- 2014-11-19 TW TW103140004A patent/TWI693438B/zh active
- 2014-11-27 CN CN201410705957.6A patent/CN104678494B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201535001A (zh) | 2015-09-16 |
| CN104678494B (zh) | 2019-05-21 |
| US10564513B2 (en) | 2020-02-18 |
| CN104678494A (zh) | 2015-06-03 |
| JP2015102844A (ja) | 2015-06-04 |
| US20150147038A1 (en) | 2015-05-28 |
| TWI693438B (zh) | 2020-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5951589B2 (ja) | 光導波路素子 | |
| US7372621B2 (en) | Wavelength converting devices | |
| US9298025B2 (en) | Electrode structure for an optical waveguide substrate | |
| JP2009217009A (ja) | 高調波発生素子 | |
| JP4646333B2 (ja) | 高調波発生装置 | |
| JP5155385B2 (ja) | 波長変換素子 | |
| US20120077003A1 (en) | Method of nonlinear crystal packaging and its application in diode pumped solid state lasers | |
| US8917443B2 (en) | Wavelength converting devices | |
| JP4576438B2 (ja) | 高調波発生素子の製造方法 | |
| JP4806424B2 (ja) | 高調波発生素子 | |
| JP2009237325A (ja) | 波長変換素子およびその製造方法 | |
| JP2008209449A (ja) | 波長変換素子 | |
| JP5855229B2 (ja) | レーザ装置 | |
| JP4657228B2 (ja) | 波長変換素子 | |
| JP2000266951A (ja) | 導波路型偏光子及びその形成方法 | |
| US20250328036A1 (en) | Optical Modulator and Optical Transmission Device Using Same | |
| JP6144770B2 (ja) | 光学部品 | |
| JP2009198651A (ja) | 波長変換素子およびその製造方法 | |
| US20080160329A1 (en) | Multilayer coating for quasi-phase-matching element | |
| JP2016024423A (ja) | 波長変換素子の製造方法および波長変換素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150519 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150819 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151030 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151102 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151221 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160606 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160608 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5951589 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |