JP5946318B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5946318B2
JP5946318B2 JP2012105425A JP2012105425A JP5946318B2 JP 5946318 B2 JP5946318 B2 JP 5946318B2 JP 2012105425 A JP2012105425 A JP 2012105425A JP 2012105425 A JP2012105425 A JP 2012105425A JP 5946318 B2 JP5946318 B2 JP 5946318B2
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JP
Japan
Prior art keywords
transistor
potential
switch
layer
oxide semiconductor
Prior art date
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Expired - Fee Related
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JP2012105425A
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English (en)
Japanese (ja)
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JP2013236126A (ja
JP2013236126A5 (enrdf_load_stackoverflow
Inventor
竹村　保彦
保彦 竹村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2012105425A priority Critical patent/JP5946318B2/ja
Publication of JP2013236126A publication Critical patent/JP2013236126A/ja
Publication of JP2013236126A5 publication Critical patent/JP2013236126A5/ja
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Publication of JP5946318B2 publication Critical patent/JP5946318B2/ja
Expired - Fee Related legal-status Critical Current
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  • Electroluminescent Light Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
JP2012105425A 2012-05-02 2012-05-02 半導体装置 Expired - Fee Related JP5946318B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012105425A JP5946318B2 (ja) 2012-05-02 2012-05-02 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012105425A JP5946318B2 (ja) 2012-05-02 2012-05-02 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016108724A Division JP6293818B2 (ja) 2016-05-31 2016-05-31 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2013236126A JP2013236126A (ja) 2013-11-21
JP2013236126A5 JP2013236126A5 (enrdf_load_stackoverflow) 2015-06-18
JP5946318B2 true JP5946318B2 (ja) 2016-07-06

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ID=49761929

Family Applications (1)

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JP2012105425A Expired - Fee Related JP5946318B2 (ja) 2012-05-02 2012-05-02 半導体装置

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JP (1) JP5946318B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015136413A1 (en) * 2014-03-12 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2017153882A1 (en) * 2016-03-11 2017-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
US10756118B2 (en) 2016-11-30 2020-08-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device
US12100747B2 (en) * 2018-11-02 2024-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4521619B2 (ja) * 1996-11-21 2010-08-11 ルネサスエレクトロニクス株式会社 低電力プロセッサ
JP4401621B2 (ja) * 2002-05-07 2010-01-20 株式会社日立製作所 半導体集積回路装置
JP5027471B2 (ja) * 2006-10-06 2012-09-19 パナソニック株式会社 半導体集積回路装置
WO2011034012A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device

Also Published As

Publication number Publication date
JP2013236126A (ja) 2013-11-21

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