JP5940657B2 - 光検出器 - Google Patents
光検出器 Download PDFInfo
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- JP5940657B2 JP5940657B2 JP2014515598A JP2014515598A JP5940657B2 JP 5940657 B2 JP5940657 B2 JP 5940657B2 JP 2014515598 A JP2014515598 A JP 2014515598A JP 2014515598 A JP2014515598 A JP 2014515598A JP 5940657 B2 JP5940657 B2 JP 5940657B2
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- 230000003287 optical effect Effects 0.000 claims description 85
- 239000004065 semiconductor Substances 0.000 claims description 70
- 230000005684 electric field Effects 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 15
- 230000032258 transport Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 49
- 239000010408 film Substances 0.000 description 12
- 206010034972 Photosensitivity reaction Diseases 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 230000036211 photosensitivity Effects 0.000 description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000003574 free electron Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
図1及び図2に示されるように、光検出器1Aは、n型のInPからなる厚さ300〜500μmの矩形板状の基板2を備え、これにコンタクト層3,5と、半導体積層体4と、電極6,7と、光学素子10とが積層されている。この光検出器1Aは、半導体積層体4における量子サブバンド間遷移の光吸収を利用する光検出器である。
本発明の第2の実施形態として、光検出器の他の形態について説明する。図7に示される第2の実施形態の光検出器1Bが第1の実施形態の光検出器1Aと異なる点は、光学素子として、金からなる光学素子10に替えて、屈折率の大きな誘電体からなる光学素子20を備えている点である。
本発明の第3の実施形態として、光検出器の他の形態について説明する。図8に示される第3の実施形態の光検出器1Cが第1の実施形態の光検出器1Aと異なる点は、コンタクト層5が、半導体積層体4の表面4aの全面に設けられていることに替えて、電極6の直下のみに設けられている点、及び、これに伴い光学素子10が半導体積層体4の表面4aに直接設けられている点である。また、光学素子10に替えて、第2の実施形態における光学素子20を適用してもよい。後述する計算結果から明らかなように、所定の方向の一方側から光学素子に入射した光から生じる所定の方向の電界成分が最も強く現れるのは、光学素子における他方側の表面付近である。従って、本実施形態の光検出器1Cは、光学素子10と半導体積層体4とが直接接しているために、第1の実施形態の光検出器1Aと比べて、光感度が高い。
本発明の第4の実施形態として、光検出器の他の形態について説明する。図9及び図10に示される第4の実施形態の光検出器1Dが第3の実施形態の光検出器1Cと異なる点は、コンタクト層5と電極6との間に、光学素子10を形成している材料(ここでは金)からなる介在部材10aが配置され、且つ当該介在部材10aが、コンタクト層5の内側の側面と光学素子10との間の領域に進入し、光学素子10とコンタクト層5及び電極6とを電気的に接続している点である。これによれば、光学素子10が半導体積層体4の表面4aに直接設けられている場合であっても、直列抵抗のロスによる光感度の低下を抑制することができる。
本発明の第5の実施形態として、光検出器の他の形態について説明する。図11及び図12に示される第5の実施形態の光検出器1Eが第1の実施形態の光検出器1Aと異なる点は、基板2cとして半絶縁性タイプのInP基板を使用している点、半導体積層体4がコンタクト層3の表面3aの全面よりも小さな面積をもち、コンタクト層3の表面3aの全面ではなく中央に設けられている点、及び、電極7が、コンタクト層3の表面3aのうち半導体積層体4が設けられていない周縁の領域に、半導体積層体4を囲むように環状に形成されている点である。このような電極7は、コンタクト層3、半導体積層体4、コンタクト層5を一旦積層した後で、コンタクト層5及び半導体積層体4をエッチング除去してコンタクト層3の表面3aを露出させることにより形成可能である。電磁誘導の小さな半絶縁性タイプの基板2cを用いることにより、低ノイズ化や高速化、又はアンプ回路等との集積回路が実現しやすくなる。
本発明の第6の実施形態として、光検出器の他の形態について説明する。図13及び図14に示される第6の実施形態の光検出器1Fが第2の実施形態の光検出器1Bと異なる点は、光学素子として、形状が異なる光学素子30を使用している点、及び、半導体積層体4が、所定の方向に沿って積層された複数の量子カスケード構造を有する点である。
光学素子の厚さ…0.5μm
周期d=1.5μm
第1の領域…ゲルマニウム(屈折率4.0)、幅0.7μm
第2の領域…空気(屈折率1.0)、幅が0.8μm
Claims (9)
- 第1の領域、及び所定の方向に垂直な面に沿って前記第1の領域に対し周期的に配列された第2の領域を含む構造体を有し、前記所定の方向に沿って光が入射したときに、前記所定の方向の電界成分を有しない光を前記所定の方向の電界成分を有するように変調する光学素子と、
前記光学素子に対し前記所定の方向における一方の側とは反対側の他方の側に配置され、前記光学素子により生じさせられた前記所定の方向の電界成分によって電流を生じる量子カスケード構造を有する半導体積層体と、を備え、
前記第1の領域は、前記所定の方向に沿って前記光を透過させて当該光を変調する誘電体からなり、
前記半導体積層体は、前記所定の方向のみの電界成分によって電流を生じるものであり、
前記量子カスケード構造は、電子が励起されるアクティブ領域と、前記電子を輸送するインジェクタ領域とを含み、
前記アクティブ領域は、前記量子カスケード構造において前記インジェクタ領域に対して前記一方の側の最表面に形成されている、光検出器。 - 前記半導体積層体は、前記所定の方向に沿って積層された複数の前記量子カスケード構造を有する、請求項1記載の光検出器。
- 前記半導体積層体の前記一方の側の表面に形成された第1のコンタクト層と、
前記半導体積層体の前記他方の側の表面に形成された第2のコンタクト層と、を更に備える、請求項1又は2記載の光検出器。 - 前記第1のコンタクト層と電気的に接続された第1の電極と、
前記第2のコンタクト層と電気的に接続された第2の電極と、を更に備える、請求項3記載の光検出器。 - 前記第2のコンタクト層、前記半導体積層体、前記第1のコンタクト層及び前記光学素子が前記他方の側から順に積層された基板を更に備える、請求項3又は4記載の光検出器。
- 前記第1の領域に対する前記第2の領域の配列の周期は、0.5〜500μmである、請求項1〜5のいずれか一項記載の光検出器。
- 前記光は、赤外線である、請求項1〜6のいずれか一項記載の光検出器。
- 前記光学素子は、前記一方の側から光が入射したときに前記所定の方向の電界成分を生じさせる、請求項1〜7のいずれか一項記載の光検出器。
- 前記光学素子は、前記半導体積層体を介して前記他方の側から光が入射したときに前記所定の方向の電界成分を生じさせる、請求項1〜7のいずれか一項記載の光検出器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2014515598A JP5940657B2 (ja) | 2012-05-16 | 2013-05-10 | 光検出器 |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
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JP2012112348 | 2012-05-16 | ||
JP2012112348 | 2012-05-16 | ||
JP2012273703 | 2012-12-14 | ||
JP2012273703 | 2012-12-14 | ||
PCT/JP2013/056621 WO2013172078A1 (ja) | 2012-05-16 | 2013-03-11 | 光学素子及び光検出器 |
JPPCT/JP2013/056621 | 2013-03-11 | ||
PCT/JP2013/063192 WO2013172273A1 (ja) | 2012-05-16 | 2013-05-10 | 光検出器 |
JP2014515598A JP5940657B2 (ja) | 2012-05-16 | 2013-05-10 | 光検出器 |
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JPWO2013172273A1 JPWO2013172273A1 (ja) | 2016-01-12 |
JP5940657B2 true JP5940657B2 (ja) | 2016-06-29 |
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JP2014515598A Expired - Fee Related JP5940657B2 (ja) | 2012-05-16 | 2013-05-10 | 光検出器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20150097156A1 (ja) |
EP (1) | EP2853867A4 (ja) |
JP (1) | JP5940657B2 (ja) |
CN (1) | CN104303030A (ja) |
WO (1) | WO2013172273A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014170925A (ja) * | 2013-02-05 | 2014-09-18 | Hamamatsu Photonics Kk | 光検出器 |
JP6581024B2 (ja) | 2016-03-15 | 2019-09-25 | 株式会社東芝 | 分布帰還型半導体レーザ |
JP6818672B2 (ja) | 2017-11-16 | 2021-01-20 | 株式会社東芝 | 面発光量子カスケードレーザ |
CN115513653B (zh) * | 2022-10-24 | 2023-05-12 | 北京星英联微波科技有限责任公司 | 基于二维电调材料的可编码四波束天线、超表面模块及复合天线结构 |
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JP3776266B2 (ja) | 1998-09-14 | 2006-05-17 | 富士通株式会社 | 赤外線検知器とその製造方法 |
WO2003058327A1 (fr) * | 2002-01-07 | 2003-07-17 | Matsushita Electric Industrial Co., Ltd. | Modulateur optique du type a surface et son procede de fabrication |
US6829269B2 (en) * | 2002-05-21 | 2004-12-07 | University Of Massachusetts | Systems and methods using phonon mediated intersubband laser |
JP2005159002A (ja) * | 2003-11-26 | 2005-06-16 | Seiko Epson Corp | 受光素子、光モジュール、及び光伝送装置 |
US7282777B1 (en) * | 2004-09-27 | 2007-10-16 | California Institute Of Technology | Interband cascade detectors |
JP2012083238A (ja) * | 2010-10-13 | 2012-04-26 | Nec Corp | 赤外線検出装置 |
WO2013172078A1 (ja) * | 2012-05-16 | 2013-11-21 | 浜松ホトニクス株式会社 | 光学素子及び光検出器 |
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2013
- 2013-05-10 JP JP2014515598A patent/JP5940657B2/ja not_active Expired - Fee Related
- 2013-05-10 CN CN201380025442.5A patent/CN104303030A/zh active Pending
- 2013-05-10 US US14/390,839 patent/US20150097156A1/en not_active Abandoned
- 2013-05-10 EP EP13791390.1A patent/EP2853867A4/en not_active Withdrawn
- 2013-05-10 WO PCT/JP2013/063192 patent/WO2013172273A1/ja active Application Filing
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US20150097156A1 (en) | 2015-04-09 |
WO2013172273A1 (ja) | 2013-11-21 |
EP2853867A1 (en) | 2015-04-01 |
CN104303030A (zh) | 2015-01-21 |
EP2853867A4 (en) | 2016-01-20 |
JPWO2013172273A1 (ja) | 2016-01-12 |
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