JP5932634B2 - 基板処理技術 - Google Patents
基板処理技術 Download PDFInfo
- Publication number
- JP5932634B2 JP5932634B2 JP2012504865A JP2012504865A JP5932634B2 JP 5932634 B2 JP5932634 B2 JP 5932634B2 JP 2012504865 A JP2012504865 A JP 2012504865A JP 2012504865 A JP2012504865 A JP 2012504865A JP 5932634 B2 JP5932634 B2 JP 5932634B2
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- Prior art keywords
- mask
- apertures
- substrate
- ion beam
- row
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/303—Electron or ion optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
- H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
Description
を含むことができる。
本実施形態において、基板500及びマスク650を、イオン注入システム内に設けることができる。その後、イオンビーム30を基板500に向けて指向させることができる。本実施形態において、イオンビーム30に対する基板500の平行移動を不要とし得るように、矢印510で示す方向に沿ったイオンビーム30の高さを、十分に大きくすることができる。言い換えれば、注入されるべき基板500内の領域をイオンビーム30の高さにより包囲し得るとともに、基板500及びイオンビーム30の一方を他方に対して平行移動させる必要が無いほど、イオンビーム30の高さは、十分に大きい。
Claims (8)
- 基板の処理方法において、
イオン源と前記基板との間にマスクを設けるステップであって、前記マスクは、第1行に設けられた1つ以上の第1アパーチャ、第2行に設けられた1つ以上の第2アパーチャ、及び第3行に設けられた1つ以上の第3アパーチャを備え、各行は前記マスクの幅方向に延在している、ステップと、
イオンビームを前記マスクの上部に向けて指向させて、前記イオンビームの第1部を、前記1つ以上の第1アパーチャの少なくとも一部分及び前記1つ以上の第2アパーチャの少なくとも一部分とオーバーラップさせるステップと、
前記基板に前記1つ以上の第1アパーチャ又は前記1つ以上の第2アパーチャを通過するイオンを注入することにより第1の注入を実行するステップと、
前記第1の注入の間に前記マスク及び前記基板のうち少なくともいずれか一方を、該マスク及び該基板のうち他方に対して、平行移動させるステップと、
前記イオンビームを前記マスクの下部に向けて指向させて、前記イオンビームを、前記1つ以上の第2アパーチャの少なくとも一部分及び前記1つ以上の第3アパーチャの少なくとも一部分とオーバーラップさせるステップと、
前記基板に前記1つ以上の第2アパーチャ又は前記1つ以上の第3アパーチャを通過するイオンを注入することにより第2の注入を実行するステップと、
前記第2の注入の間に前記マスク及び前記基板のうち少なくともいずれか一方を、該マスク及び該基板のうち他方に対して、平行移動させるステップと、
を含む方法。 - 請求項1に記載の方法において、
前記イオンビームを前記マスクに対して固定配置するステップをさらに含む方法。 - 請求項1に記載の方法において、
前記1つ以上の第1アパーチャ及び前記1つ以上の第2アパーチャを、前記マスクの高さ方向に整列させない方法。 - 請求項3に記載の方法において、
前記1つ以上の第1アパーチャ及び前記1つ以上の第2アパーチャを、前記高さ方向にオーバーラップさせて、オーバーラップ領域を規定する方法。 - 請求項1に記載の方法において、
前記イオン注入中に、前記マスクに対する前記イオンビームの位置を、前記マスクの上部から前記マスクの前記下部へ変化させる方法。 - 請求項1に記載の方法において、
前記第1行の前記1つ以上の第1アパーチャを、前記第2行の前記1つ以上の第2アパーチャに対して、前記マスクの高さ方向に整列させない方法。 - 請求項6に記載の方法において、
前記第1行に設けられた前記1つ以上の第1アパーチャ及び前記第2行に設けられた前記1つ以上の第2アパーチャは、前記マスクの高さ方向にオーバーラップさせて、オーバーラップ領域を規定する方法。 - 請求項6に記載の方法において、
前記第1行に設けられた前記1つ以上の第1アパーチャ及び前記第2行に設けられた前記1つ以上の第2アパーチャを、オーバーラップ領域を有しないように配置する方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16755009P | 2009-04-08 | 2009-04-08 | |
US61/167,550 | 2009-04-08 | ||
US12/756,036 | 2010-04-07 | ||
US12/756,036 US8900982B2 (en) | 2009-04-08 | 2010-04-07 | Techniques for processing a substrate |
PCT/US2010/030395 WO2010118234A2 (en) | 2009-04-08 | 2010-04-08 | Techniques for processing a substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012523707A JP2012523707A (ja) | 2012-10-04 |
JP2012523707A5 JP2012523707A5 (ja) | 2013-05-30 |
JP5932634B2 true JP5932634B2 (ja) | 2016-06-08 |
Family
ID=42936874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012504865A Expired - Fee Related JP5932634B2 (ja) | 2009-04-08 | 2010-04-08 | 基板処理技術 |
Country Status (8)
Country | Link |
---|---|
US (2) | US8900982B2 (ja) |
EP (1) | EP2417623B1 (ja) |
JP (1) | JP5932634B2 (ja) |
KR (1) | KR101732446B1 (ja) |
CN (1) | CN102428542B (ja) |
ES (1) | ES2573089T3 (ja) |
TW (2) | TWI467620B (ja) |
WO (1) | WO2010118234A2 (ja) |
Families Citing this family (13)
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US9006688B2 (en) | 2009-04-08 | 2015-04-14 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate using a mask |
US8330128B2 (en) | 2009-04-17 | 2012-12-11 | Varian Semiconductor Equipment Associates, Inc. | Implant mask with moveable hinged mask segments |
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2010
- 2010-04-07 US US12/756,036 patent/US8900982B2/en not_active Expired - Fee Related
- 2010-04-08 EP EP10762439.7A patent/EP2417623B1/en not_active Not-in-force
- 2010-04-08 KR KR1020117026147A patent/KR101732446B1/ko active IP Right Grant
- 2010-04-08 TW TW99110886A patent/TWI467620B/zh not_active IP Right Cessation
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- 2010-04-08 TW TW103140413A patent/TWI567776B/zh not_active IP Right Cessation
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ES2573089T3 (es) | 2016-06-06 |
US9863032B2 (en) | 2018-01-09 |
WO2010118234A2 (en) | 2010-10-14 |
WO2010118234A3 (en) | 2011-01-20 |
JP2012523707A (ja) | 2012-10-04 |
TWI567776B (zh) | 2017-01-21 |
KR20120011026A (ko) | 2012-02-06 |
US20150102237A1 (en) | 2015-04-16 |
TWI467620B (zh) | 2015-01-01 |
CN102428542B (zh) | 2015-09-09 |
US8900982B2 (en) | 2014-12-02 |
TW201521074A (zh) | 2015-06-01 |
TW201101365A (en) | 2011-01-01 |
KR101732446B1 (ko) | 2017-05-04 |
EP2417623A2 (en) | 2012-02-15 |
EP2417623A4 (en) | 2012-12-26 |
EP2417623B1 (en) | 2016-04-06 |
US20110092059A1 (en) | 2011-04-21 |
CN102428542A (zh) | 2012-04-25 |
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