JP5929398B2 - 不揮発性半導体メモリ装置、及び、その制御方法 - Google Patents

不揮発性半導体メモリ装置、及び、その制御方法 Download PDF

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JP5929398B2
JP5929398B2 JP2012068748A JP2012068748A JP5929398B2 JP 5929398 B2 JP5929398 B2 JP 5929398B2 JP 2012068748 A JP2012068748 A JP 2012068748A JP 2012068748 A JP2012068748 A JP 2012068748A JP 5929398 B2 JP5929398 B2 JP 5929398B2
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data
memory
writing
semiconductor memory
nonvolatile semiconductor
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JP2013200919A5 (enrdf_load_stackoverflow
JP2013200919A (ja
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翼 田中
翼 田中
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Buffalo Inc
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Melco Holdings Inc
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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
JP2012068748A 2012-03-26 2012-03-26 不揮発性半導体メモリ装置、及び、その制御方法 Active JP5929398B2 (ja)

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JP2013200919A JP2013200919A (ja) 2013-10-03
JP2013200919A5 JP2013200919A5 (enrdf_load_stackoverflow) 2015-01-15
JP5929398B2 true JP5929398B2 (ja) 2016-06-08

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KR102250423B1 (ko) 2015-01-13 2021-05-12 삼성전자주식회사 불휘발성 메모리 시스템 및 그것의 동작 방법
WO2018163258A1 (ja) * 2017-03-06 2018-09-13 株式会社日立製作所 フラッシュメモリモジュール、ストレージシステム、及びフラッシュメモリの制御方法
CN115410641B (zh) * 2022-11-02 2023-03-14 合肥康芯威存储技术有限公司 一种存储系统及其测试方法

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JPH09204367A (ja) * 1996-01-25 1997-08-05 Mitsubishi Electric Corp フラッシュディスクカードにおけるフラッシュメモリデータのリフレッシュ方法
JP4775969B2 (ja) * 2007-09-03 2011-09-21 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
WO2009110142A1 (en) * 2008-03-07 2009-09-11 Kabushiki Kaisha Toshiba Information processing apparatus and non-volatile semiconductor memory drive
JP2012048770A (ja) * 2010-08-24 2012-03-08 Toshiba Corp 不揮発性半導体記憶装置、及び、メモリシステム

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