JP5917285B2 - 半導体装置の駆動方法 - Google Patents

半導体装置の駆動方法 Download PDF

Info

Publication number
JP5917285B2
JP5917285B2 JP2012109004A JP2012109004A JP5917285B2 JP 5917285 B2 JP5917285 B2 JP 5917285B2 JP 2012109004 A JP2012109004 A JP 2012109004A JP 2012109004 A JP2012109004 A JP 2012109004A JP 5917285 B2 JP5917285 B2 JP 5917285B2
Authority
JP
Japan
Prior art keywords
transistor
power gating
semiconductor device
node
period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012109004A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013236344A5 (https=
JP2013236344A (ja
Inventor
貴浩 福留
貴浩 福留
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2012109004A priority Critical patent/JP5917285B2/ja
Publication of JP2013236344A publication Critical patent/JP2013236344A/ja
Publication of JP2013236344A5 publication Critical patent/JP2013236344A5/ja
Application granted granted Critical
Publication of JP5917285B2 publication Critical patent/JP5917285B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2012109004A 2012-05-11 2012-05-11 半導体装置の駆動方法 Expired - Fee Related JP5917285B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012109004A JP5917285B2 (ja) 2012-05-11 2012-05-11 半導体装置の駆動方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012109004A JP5917285B2 (ja) 2012-05-11 2012-05-11 半導体装置の駆動方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016074881A Division JP6231603B2 (ja) 2016-04-04 2016-04-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2013236344A JP2013236344A (ja) 2013-11-21
JP2013236344A5 JP2013236344A5 (https=) 2015-06-25
JP5917285B2 true JP5917285B2 (ja) 2016-05-11

Family

ID=49762074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012109004A Expired - Fee Related JP5917285B2 (ja) 2012-05-11 2012-05-11 半導体装置の駆動方法

Country Status (1)

Country Link
JP (1) JP5917285B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015030150A1 (en) * 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage circuit and semiconductor device
JP2015180994A (ja) * 2014-03-06 2015-10-15 株式会社半導体エネルギー研究所 半導体装置
WO2015193777A1 (en) * 2014-06-20 2015-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20240161234A (ko) * 2014-10-10 2024-11-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로, 처리 유닛, 전자 부품, 전자 기기, 및 반도체 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05110392A (ja) * 1991-10-16 1993-04-30 Hitachi Ltd 状態保持回路を具備する集積回路
JP2000077982A (ja) * 1998-08-27 2000-03-14 Kobe Steel Ltd 半導体集積回路
JP2006050208A (ja) * 2004-08-04 2006-02-16 Denso Corp 電源瞬断対応論理回路
WO2009063542A1 (ja) * 2007-11-12 2009-05-22 Fujitsu Microelectronics Limited 半導体装置
WO2011070905A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR102459005B1 (ko) * 2009-12-25 2022-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치, 반도체 장치, 및 전자 장치
JP5859839B2 (ja) * 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子

Also Published As

Publication number Publication date
JP2013236344A (ja) 2013-11-21

Similar Documents

Publication Publication Date Title
JP7504964B2 (ja) 半導体装置
US10511309B1 (en) Method and device to speed-up leakage based PUF generators under extreme operation conditions
US8436431B2 (en) Semiconductor device including gate and three conductor electrodes
JP2008521249A (ja) スケーラブル集積論理および不揮発性メモリ
US20200220024A1 (en) Charge trap layer in back-gated thin-film transistors
US20130148243A1 (en) Esd protecting circuit and semiconductor device including the same
JP2011514657A (ja) ボディ制御ダブルチャネルトランジスタおよびこれを備える回路
TW201519231A (zh) 半導體裝置
JP5917285B2 (ja) 半導体装置の駆動方法
US8928056B2 (en) Nonvolatile semiconductor memory device
TW201543669A (zh) 有袋部的ｐ穿隧場效電晶體裝置
JP2004288978A (ja) 半導体集積装置
TW201729353A (zh) 非揮發性記憶體及其製造方法
US20250192075A1 (en) Active protection circuits for semiconductor devices
CN111989865B (zh) 半导体装置
CN105609562A (zh) 背栅连接有负电容的半导体器件及其制造方法及电子设备
US9406673B2 (en) Semiconductor component with transistor
US20170125402A1 (en) Semiconductor device
US20160218112A1 (en) Non-volatile memory (nvm) cell and device structure integration
JP6231603B2 (ja) 半導体装置
TW200950059A (en) Semiconductor device
KR100540404B1 (ko) 반도체 장치
KR102655329B1 (ko) 커패시터 구조물
JP3998098B2 (ja) 半導体記憶装置
CN110491874B (zh) 静电保护电路及面板

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150501

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150501

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160224

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160322

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160406

R150 Certificate of patent or registration of utility model

Ref document number: 5917285

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees