JP5917285B2 - 半導体装置の駆動方法 - Google Patents

半導体装置の駆動方法 Download PDF

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JP5917285B2
JP5917285B2 JP2012109004A JP2012109004A JP5917285B2 JP 5917285 B2 JP5917285 B2 JP 5917285B2 JP 2012109004 A JP2012109004 A JP 2012109004A JP 2012109004 A JP2012109004 A JP 2012109004A JP 5917285 B2 JP5917285 B2 JP 5917285B2
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transistor
power gating
semiconductor device
node
period
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JP2013236344A (ja
JP2013236344A5 (enExample
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貴浩 福留
貴浩 福留
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2012109004A 2012-05-11 2012-05-11 半導体装置の駆動方法 Active JP5917285B2 (ja)

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JP2012109004A JP5917285B2 (ja) 2012-05-11 2012-05-11 半導体装置の駆動方法

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JP2012109004A JP5917285B2 (ja) 2012-05-11 2012-05-11 半導体装置の駆動方法

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JP2016074881A Division JP6231603B2 (ja) 2016-04-04 2016-04-04 半導体装置

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JP2013236344A JP2013236344A (ja) 2013-11-21
JP2013236344A5 JP2013236344A5 (enExample) 2015-06-25
JP5917285B2 true JP5917285B2 (ja) 2016-05-11

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015030150A1 (en) 2013-08-30 2015-03-05 Semiconductor Energy Laboratory Co., Ltd. Storage circuit and semiconductor device
JP2015180994A (ja) * 2014-03-06 2015-10-15 株式会社半導体エネルギー研究所 半導体装置
DE112015002911T5 (de) * 2014-06-20 2017-03-09 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
CN112671388B (zh) * 2014-10-10 2024-07-05 株式会社半导体能源研究所 逻辑电路、处理单元、电子构件以及电子设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05110392A (ja) * 1991-10-16 1993-04-30 Hitachi Ltd 状態保持回路を具備する集積回路
JP2000077982A (ja) * 1998-08-27 2000-03-14 Kobe Steel Ltd 半導体集積回路
JP2006050208A (ja) * 2004-08-04 2006-02-16 Denso Corp 電源瞬断対応論理回路
WO2009063542A1 (ja) * 2007-11-12 2009-05-22 Fujitsu Microelectronics Limited 半導体装置
IN2012DN04871A (enExample) * 2009-12-11 2015-09-25 Semiconductor Energy Laoboratory Co Ltd
WO2011078373A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
JP5859839B2 (ja) * 2011-01-14 2016-02-16 株式会社半導体エネルギー研究所 記憶素子の駆動方法、及び、記憶素子

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