JP5913535B1 - Component built-in substrate and manufacturing method thereof - Google Patents

Abstract

Provided are a component-embedded substrate capable of reducing the overall thickness while simplifying the manufacturing process and preventing an increase in impedance and inductance between electrodes, and a method for manufacturing the same. A component-embedded substrate 1 having a multilayer structure includes a first wiring layer 12, a first interlayer conductive layer 13 and a first electronic component 91 or a second electronic component 90 formed on both surfaces of a first insulating layer 11. The double-sided substrates 10a and 10b having the opening 19 in which the first insulating layer 21 is accommodated, and the intermediate substrate 20 having the first adhesive layer 22 and the second interlayer conductive layer 23 provided on both sides of the second insulating layer 21. The double-sided substrates 10a and 10b are respectively disposed on the upper layer and the lower layer of the substrate 20, and the electrode 91a of the first electronic component 91 located on the upper layer of the intermediate substrate 20 and the electrode of the second electronic component 90 located on the lower layer. 90 a is directly connected through the second interlayer conductive layer 23. [Selection] Figure 1

Description

  The present invention relates to a component-embedded substrate that incorporates an electronic component and a method for manufacturing the same.

  In order to meet the demand for further miniaturization and higher performance centered on recent small precision electronic devices, semiconductor devices mounted on a substrate are also required to be miniaturized and highly integrated. In response to such demands, there is a need to cope with high integration while miniaturizing semiconductor devices by using three-dimensional package technology such as CoC (Chip on Chip) and PoP (Package on Package) and component-embedded substrate technology. It is increasing.

  A multilayer printed wiring board disclosed in the following Patent Document 1 is known as one using the component-embedded substrate technology. This multilayer printed wiring board is formed by laminating a plurality of printed wiring boards each having a wiring layer formed on an insulating substrate via insulating spacers having adhesive layers formed on both sides, and between the printed wiring boards formed by the insulating spacers. Electronic components are built into the space.

JP 2007-80857 A

  However, in the multilayer printed wiring board of the prior art disclosed in Patent Document 1 described above, an insulating spacer thicker than the thickness of the built-in electronic component is disposed between the printed wiring boards, so Are stacked in multiple layers in a state where gaps for incorporating electronic components are formed. For this reason, the manufacturing process becomes complicated and it is difficult to reduce the thickness of the entire multilayer printed wiring board, and further, the conductor distance connecting the electrodes of each electronic component becomes longer, and the impedance and inductance between the electrodes increase. There's a problem.

  The present invention eliminates the problems caused by the above-described prior art, can reduce the overall thickness while simplifying the manufacturing process, and can prevent increase in impedance and inductance between electrodes, and It aims at providing the manufacturing method.

  A component-embedded substrate according to the present invention is a component-embedded substrate having a multilayer structure in which a first electronic component and a second electronic component are embedded in a stacking direction, the first wiring layer formed on both surfaces of the first insulating layer, A first interlayer conductive layer penetrating the first insulating layer and connected to the first wiring layer; a double-sided substrate having an opening accommodating the first electronic component or the second electronic component; and a second insulating layer An intermediate substrate having a first adhesive layer provided on both sides and a second interlayer conductive layer penetrating the second insulating layer together with the first adhesive layer, and the double-sided substrates on the upper layer and the lower layer of the intermediate substrate, respectively. The electrode of the first electronic component located in the upper layer of the intermediate substrate and the electrode of the second electronic component located in the lower layer are directly connected via the second interlayer conductive layer. Features.

  According to the component-embedded substrate according to the present invention, in the component-embedded substrate having a multilayer structure in which the first electronic component and the second electronic component are embedded in the stacking direction, the first wiring layer formed on both surfaces of the first insulating layer. A double-sided substrate having a first interlayer conductive layer penetrating the first insulating layer and connected to the first wiring layer, and an opening accommodating the first electronic component or the second electronic component; and a second insulation A first adhesive layer provided on both sides of the layer, and an intermediate substrate having a second interlayer conductive layer penetrating the second insulating layer together with the first adhesive layer, and the double-sided substrate on an upper layer and a lower layer of the intermediate substrate Are arranged, and the electrode of the first electronic component located in the upper layer of the intermediate substrate and the electrode of the second electronic component located in the lower layer are directly connected via the second interlayer conductive layer. This simplifies the manufacturing process and reduces the overall thickness. It is possible to prevent the impedance and inductance between the electrodes is increased it is possible to achieve reduction.

  In the component-embedded substrate, one of the first electronic component and the second electronic component is a semiconductor chip in which an electrode is formed only on one side, and the semiconductor chip has an electrode facing the intermediate substrate. Also good.

  In the component-embedded substrate, the second wiring layer formed on one surface of the third insulating layer, the second adhesive layer provided on the other surface, and the second adhesive layer pass through the third insulating layer and pass through the third insulating layer. A single-sided substrate having a third interlayer conductive layer connected to the second wiring layer, wherein one of the first electronic component and the second electronic component is an electronic component having electrodes formed on both sides thereof; The third interlayer conductive layer of the substrate is connected to an electrode on a surface opposite to the intermediate substrate in the electronic component having electrodes formed on both surfaces, and the single-sided substrate and the intermediate substrate are formed with electrodes on the both surfaces. The electronic components thus obtained may be stacked with a double-sided board accommodated in the opening.

  In the component-embedded substrate, the first electronic component is a first semiconductor chip in which an electrode is formed only on one side, and the second electronic component is a second semiconductor chip in which an electrode is formed only on one side. Each electrode of the first semiconductor chip and the second semiconductor chip may face the intermediate substrate.

  In the component-embedded substrate, the second wiring layer formed on one surface of the third insulating layer, the second adhesive layer provided on the other surface, and the second adhesive layer pass through the third insulating layer and pass through the third insulating layer. A single-sided substrate having a third interlayer conductive layer connected to the second wiring layer is provided, and electrodes are formed on both sides in either one of the openings of the double-sided substrate arranged on the upper layer or lower layer of the intermediate substrate A third electronic component is accommodated, and the third interlayer conductive layer of the single-sided substrate is connected to an electrode on a surface opposite to the intermediate substrate in the third electronic component, and the single-sided substrate and the intermediate substrate are The third electronic component may be stacked with a double-sided substrate accommodated in the opening.

  The component-embedded substrate may include a plurality of the second interlayer conductive layers, and the first second interlayer conductive layer and the second second interlayer conductive layer may have different diameters.

  According to another aspect of the present invention, there is provided a method of manufacturing a component-embedded substrate, wherein the first electronic component and the second electronic component are embedded in the stacking direction. Forming a layer, forming a first interlayer conductive layer that penetrates the first insulating layer and is connected to the first wiring layer, and has an opening for accommodating the first electronic component or the second electronic component Forming a double-sided substrate and providing a first adhesive layer on both sides of the second insulating layer, and forming a second interlayer conductive layer penetrating the second insulating layer together with the first adhesive layer; A step of producing a substrate; a double-sided substrate in which the first electronic component is housed in an upper layer of the intermediate substrate; and a double-sided substrate in which the second electronic component is housed in a lower layer of the intermediate substrate. And laminating so that the laminating step The electrodes of the first electronic component located in the upper layer of the intermediate substrate and the electrodes of the second electronic component located in the lower layer are laminated so as to be directly connected via the second interlayer conductive layer. It is characterized by that.

  According to the method for manufacturing a component-embedded substrate according to the present invention, the method for manufacturing a component-embedded substrate according to the present invention includes a multilayer-structured component-embedded substrate in which the first electronic component and the second electronic component are embedded in the stacking direction. In the manufacturing method, a first wiring layer is formed on both surfaces of the first insulating layer, and a first interlayer conductive layer that penetrates the first insulating layer and is connected to the first wiring layer is formed. Forming a double-sided substrate by forming an opening for accommodating a component or the second electronic component; providing a first adhesive layer on both sides of the second insulating layer; and providing the second insulating layer together with the first adhesive layer Forming an intermediate substrate by forming a second interlayer conductive layer penetrating the layer; a double-sided substrate containing the first electronic component disposed in an upper layer of the intermediate substrate; and a lower layer of the intermediate substrate A double-sided board containing the second electronic component is disposed. And laminating, wherein in the laminating step, the electrode of the first electronic component located in the upper layer of the intermediate substrate and the electrode of the second electronic component located in the lower layer are the second interlayer conductive layer By laminating so as to be directly connected via each other, it is possible to reduce the overall thickness while simplifying the manufacturing process, and it is possible to manufacture a component-embedded substrate that prevents an increase in impedance and inductance between electrodes. .

  In the method for manufacturing a component-embedded substrate, one of the first electronic component and the second electronic component is a semiconductor chip having an electrode formed on only one side, and the electrode faces the intermediate substrate. You may arrange so that.

  In the method for manufacturing a component-embedded substrate, the second wiring layer is formed on one surface of the third insulating layer, the second adhesive layer is provided on the other surface, and the third insulating layer is formed together with the second adhesive layer. A step of forming a single-sided substrate by forming a third interlayer conductive layer that penetrates and is connected to the second wiring layer, wherein either one of the first electronic component and the second electronic component has electrodes on both sides In the stacking step, the third interlayer conductive layer of the single-sided substrate is connected to an electrode on the surface opposite to the intermediate substrate in the electronic component on which the electrodes are formed on both sides. In addition, the single-sided substrate and the intermediate substrate may be laminated so as to sandwich a double-sided substrate in which an electronic component having electrodes formed on both sides is accommodated in an opening.

  In the method for manufacturing a component-embedded substrate, the first electronic component is a first semiconductor chip in which an electrode is formed only on one side, and the second electronic component is a second semiconductor in which an electrode is formed only on one side. It may be a chip, and the first semiconductor chip and the second semiconductor chip may be arranged such that each electrode faces the intermediate substrate.

  In the method for manufacturing a component-embedded substrate, the second wiring layer is formed on one surface of the third insulating layer, the second adhesive layer is provided on the other surface, and the third insulating layer is formed together with the second adhesive layer. A step of forming a single-sided substrate by forming a third interlayer conductive layer that penetrates and is connected to the second wiring layer, and includes either one of the openings of the double-sided substrate disposed in the upper layer or the lower layer of the intermediate substrate In the step, the third electronic component having electrodes formed on both sides is housed, and in the step of laminating, the third interlayer conductive layer of the single-sided substrate is a surface opposite to the intermediate substrate in the third electronic component. The single-sided board and the intermediate board may be laminated so as to sandwich the double-sided board in which the third electronic component is accommodated in the opening.

  In the method for manufacturing a component-embedded substrate, the plurality of second interlayer conductive layers may be provided, and the first second interlayer conductive layer and the second second interlayer conductive layer may have different diameters.

  According to the present invention, it is possible to reduce the thickness of the entire component-embedded substrate while simplifying the manufacturing process, and to prevent an increase in impedance and inductance between the electrodes.

It is sectional drawing which shows the component built-in board | substrate which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the single-sided board with which the same component built-in board is provided. It is a flowchart which shows the manufacturing process of the single-sided board with which the component built-in board is provided. It is sectional drawing which shows the manufacturing process of the double-sided board with which the component built-in board | substrate is provided. It is a flowchart which shows the manufacturing process of the double-sided board with which the same component built-in board is provided. It is sectional drawing which shows the manufacturing process of the intermediate board with which the same component built-in board is provided. It is a flowchart which shows the manufacturing process of the intermediate board with which the same component built-in board is provided. It is sectional drawing which shows the manufacturing process of the batch lamination | stacking included in the manufacturing process of the same component built-in substrate. It is a flowchart which shows the manufacturing process of the collective lamination | stacking included in the manufacturing process of the same component built-in substrate. It is sectional drawing which shows the component built-in board | substrate which concerns on the 2nd Embodiment of this invention.

  Hereinafter, a component-embedded substrate and a manufacturing method thereof according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is a cross-sectional view showing a component-embedded substrate according to the first embodiment of the present invention. As shown in FIG. 1, the component-embedded substrate 1 is formed by laminating a plurality of unit substrates and incorporating electronic components 90 to 92 in the stacking direction, and includes double-sided substrates 10a and 10b as unit substrates, and an intermediate substrate. 20 and single-sided substrates 30a and 30b are collectively laminated by thermocompression bonding. In the component built-in substrate 1, the electronic component 90 is built in the opening 19 formed in the double-sided substrate 10b while being sandwiched between the intermediate substrate 20 and the single-sided substrate 30b, and the electronic components 91 and 92 are double-sided. In the opening 19 formed in the board | substrate 10a, it is incorporated in the state pinched | interposed into the intermediate board | substrate 20 and the single-sided board | substrate 30a.

  The double-sided board 10a includes a resin base material 11 as a film-like first insulating layer, wirings 12 as first wiring layers formed on both sides of the resin base material 11, wirings 12 and resin bases on the intermediate board side. A via 13 serving as a first interlayer conductive layer is formed by plating in the via hole 2 penetrating the material 11 and connecting each wiring 12. Moreover, the double-sided board 10a includes an opening 19 from which the resin base material 11 and the wiring 12 are removed at a predetermined location. The structure of the double-sided substrate 10b is the same.

  The intermediate substrate 20 includes a resin base material 21 as a film-like second insulating layer, a first adhesive layer 22 provided on both surfaces of the resin base material 21, and the first adhesive layer 22 and the resin base material 21. And a via 23 as a second interlayer conductive layer made of a conductive paste filled in the penetrating via hole 3.

  The single-sided substrate 30 a is provided on the opposite surface of the resin base 31, the resin base 31 as a film-like third insulating layer, the wiring 32 as the second wiring layer formed on one side of the resin base 31 And a via 33 serving as a third interlayer conductive layer made of a conductive paste filled in the via hole 4 penetrating the second adhesive layer 22a and the resin base material 31. The configuration of the single-sided substrate 30b is the same.

  The resin base materials 11, 21, and 31 are each composed of a resin film of a low dielectric constant material having a thickness of about 25 μm. As the resin film, polyimide, polyolefin, liquid crystal polymer (LCP), or the like can be used.

  The wirings 12 and 32 are formed on the resin base materials 11 and 31. The electronic components 90 to 92 include active components such as transistors, integrated circuits (ICs), and diodes, and passive components such as resistors, capacitors, relays, and piezoelectric elements. The electronic component 90 shown in FIG. 1 is a semiconductor chip. Electrodes 90 a and 90 b are provided on the electrode forming surface of the electronic component 90. The electronic components 91 and 92 are active components or passive components having electrodes formed at both ends, and can be connected to any one of the interlayer conductive layers of the single-sided substrate and the double-sided substrate.

  The vias 23 and 33 are made of conductive paste filled in the via holes 3 and 4, respectively. The conductive paste is at least one metal particle selected from nickel, gold, silver, copper, aluminum, iron, etc., and at least one low melting metal particle selected from tin, bismuth, indium, lead, etc. Including. The conductive paste is made of a paste obtained by mixing these metal particles with a binder component mainly composed of epoxy, acrylic, urethane or the like.

  The conductive paste thus configured has a metal-sintering-type characteristic in which the curing temperature is about 150 ° C. to 200 ° C. and the melting point after curing is about 260 ° C. or more. It can be melted at 200 ° C. or lower to form an alloy, and particularly has the property of forming an intermetallic compound with copper, silver, or the like. Therefore, the connection portions between the vias 23 and 33 and the wirings 12 and 32 are alloyed by an intermetallic compound at the time of batch lamination thermocompression bonding.

  The conductive paste can be composed of a nanopaste in which fillers such as gold, silver, copper, and nickel having a nanometer particle size are mixed with the binder component as described above. In addition, the conductive paste can also be configured by a paste in which metal particles such as nickel are mixed with the binder component as described above.

  In this case, the conductive paste has a characteristic that electrical connection is made when the metal particles come into contact with each other. As a method for filling the conductive paste into the via holes 3 and 4, it is possible to use a printing method, a spin coating method, a spray coating method, a dispensing method, a laminating method, and a method using these in combination.

  In the component-embedded substrate 1 according to the first embodiment, the double-sided boards 10a and 10b and the single-sided boards 30a and 30b are arranged such that the double-sided boards 10a and 10b are disposed across the intermediate board 20, and the single-sided boards 30a and 30b are further arranged. Are stacked in 5 layers in the order shown. The electronic component 90 housed in the opening 19 of the double-sided board 10b is arranged so that the electrode forming surface faces the intermediate board 20. Further, the electrodes 91a and 92a on the intermediate substrate side of the electronic components 91 and 92 accommodated in the opening 19 of the double-sided substrate 10a are connected to the electrodes 90a and 90b of the electronic component 90 through the vias 23 of the intermediate substrate 20. .

  Further, the single-sided board 30b is arranged so that the via 33 is connected to the wiring 12 of the double-sided board 10b, and the wiring 32 is located in the outermost layer of the component built-in board 1. In the single-sided board 30a, a part of the via 33 is connected to the wiring 12 of the double-sided board 10a, and the other part is connected to the electrodes 91b and 92b on the single-sided board side of the electronic components 91 and 92. It arrange | positions so that it may be located in the outermost layer of the other side of the board | substrate 1. FIG. The intermediate substrate 20 and the double-sided substrates 10a and 10b are bonded by the first adhesive layer 22 of the intermediate substrate 20, respectively. The double-sided substrates 10a and 10b and the single-sided substrates 30a and 30b are bonded by the second adhesive layer 22a of the single-sided substrates 30a and 30b. Each is glued. The first and second adhesive layers 22 and 22a are made of an organic adhesive material containing a volatile component such as epoxy or acrylic.

  According to this embodiment, in the component-embedded substrate 1 having a multilayer structure in which the electronic components 90 to 92 are built in the stacking direction, the wiring 12 formed on both surfaces of the resin base material 11, the resin base material 11 is penetrated. A double-sided board 10a having an opening 19 in which the via 13 connected to the wiring 12 and the electronic components 91 and 92 are accommodated, the wiring 12 formed on both surfaces of the resin base 11, and the resin base 11 are penetrated. The double-sided substrate 10b having the vias 13 connected to the wirings 12 and the openings 19 in which the electronic components 90 are accommodated, the first adhesive layer 22 and the first adhesive layer provided on both surfaces of the resin base 21 22 and an intermediate substrate 20 having a via 23 penetrating through the resin base material 21, the double-sided substrate 10 a is disposed in the upper layer of the intermediate substrate 20, and the double-sided substrate 10 b is disposed in the lower layer. The electrodes of the electronic components 91 and 92 located on the upper layer of the plate 20 and the electrodes of the electronic component 90 located on the lower layer are directly connected via the vias 23, thereby simplifying the manufacturing process. The overall thickness can be reduced, and the impedance and inductance between the electrodes can be prevented from increasing.

  In addition, since the double-sided substrates 10a and 10b, the intermediate substrate 20 and the single-sided substrates 30a and 30b having a simple structure are manufactured and the electronic components 90 to 92 are accommodated, they can be collectively laminated and manufactured by thermocompression bonding. The manufacturing process can be simplified. Further, the electronic components 90 to 92 housed in the opening 19 are built in a state surrounded by the first and second adhesive layers 22 and 22 a, and the electronic components 90 and the electronic components 91 and 92 are interposed between them. Since the resin base material 21 of the board | substrate 20 is interposing, insulation reliability can be improved, ensuring the mechanical strength of a lamination direction. Furthermore, the position where each of the electronic components 90 to 92 is accommodated is not limited to the above embodiment, and may be accommodated such that the positions of the electronic component 90 and the electronic component 91 are replaced with each other.

  Furthermore, the metal used for any terminal of the electronic components 90 to 92 may be a metal that forms a strong alloy with the material of the vias 23 and 33 to be connected.

  Here, the roles of the plurality of electrodes formed on the electronic component 90, which is a semiconductor chip, vary, and include power supply, grounding, control signal, and high-frequency signal. The electrodes for control signals and high-frequency signals are connected to the electrodes of other electronic components via wiring, and various signals are communicated with other electronic components to which the electrodes are connected. In the present invention, when it is intended to realize the connection form for communication as described above, the via 23 is one of the wirings connecting the electronic component 90 which is a semiconductor chip and each electrode of the other electronic component. Parts.

  Since the via 23 constituting a part of the wiring itself has a parasitic resistance and a parasitic capacitance, depending on the type of signal that is communicated between the electronic component 90 and another electronic component, the parasitic resistance or Due to the parasitic capacitance, the signal waveform may be affected. That is, a parasitic resistance exists in the via 23 and a parasitic capacitance exists between the via 23 and the ground, so that an RC equivalent circuit is formed and functions as a low-pass filter for a signal. However, this low-pass filter may not only have an adverse effect but also have a favorable effect.

  For example, in order for the electronic component 90 to communicate control signals with other electronic components, the control signal is mostly a low-frequency digital signal in the first place. Therefore, the wiring connecting the electrodes corresponds to the high-frequency signal. There is no need to be. In such a case, since high frequency noise included in the control signal is removed by functioning as a low-pass filter, it is preferable that a parasitic resistance and a parasitic capacitance exist. On the other hand, in order for the electronic component 90 to communicate high frequency signals with other electronic components, the low-pass filter is naturally a hindrance to communication.

  In addition, there may be a plurality of vias 23, and the values of parasitic resistance and parasitic capacitance required for each may be different. That is, one via 23 is for communication of control signals, and another via 23 is for communication of high-frequency signals. In the present invention, when the values of the parasitic resistance and the parasitic capacitance of the via 23 are made different, it is efficient to make the value of the parasitic resistance different by changing the diameter of the via 23. Because the thickness of the intermediate substrate is common, it is difficult to vary the value of the parasitic resistance by changing the length of the via 23, and the value of the parasitic capacitance greatly depends on the distance from the ground. This is because the degree of freedom of design is significantly limited when the value of the parasitic capacitance is adjusted. That is, the control signal communication via 23 has a relatively smaller diameter than the high-frequency signal communication via 23, and the parasitic resistance can be increased. The reverse is true.

  Next, a manufacturing method of the component built-in substrate 1 according to the first embodiment will be described. 2, 4, 6, and 8 are cross-sectional views showing the component-embedded substrate for each manufacturing process. 3, FIG. 5, FIG. 7, and FIG. 9 are flowcharts showing the component-embedded substrate for each manufacturing process.

  First, the manufacturing process of the single-sided substrate 30a will be described with reference to FIGS. The same applies to the manufacturing process of the single-sided substrate 30b.

  As shown in FIG. 2A, an etching resist is formed by photolithography on one side CCL conductor layer in which a conductor layer made of copper foil or the like is formed on one side of a resin base material 31, and etching is performed. Is formed (step S100 in FIG. 3).

  The single-sided CCL used here has a structure in which a conductor layer made of a copper foil having a thickness of about 12 μm is bonded to a resin base material 31 having a thickness of about 25 μm. As this single-sided CCL, what was produced by applying a polyimide varnish to a copper foil and curing the varnish by a known casting method can be used.

  Next, as shown in FIG. 2B, an adhesive is attached to the surface opposite to the wiring 32 side of the resin base material 31 to form the second adhesive layer 22a (step S102 in FIG. 3). As the second adhesive layer 22a, an epoxy thermosetting film having a thickness of about 25 μm can be used. Note that the adhesive does not necessarily have to be in the form of a film, and may be one in which a varnish-like resin is applied.

  And as shown in FIG.2 (c), it irradiates with a laser beam using the UV-YAG laser apparatus toward the wiring 32 from the 2nd contact bonding layer 22a side, and the 2nd contact bonding layer 22a and the resin base material 31 are shown. A via hole 4 penetrating through is formed at a predetermined location (step S104 in FIG. 3). The formed via hole 4 is subjected to a plasma desmear process at the time of formation.

In addition, the via hole 4 may be formed by a carbon dioxide laser (CO ₂ laser), an excimer laser, or the like, or may be formed by drilling or chemical etching. The plasma desmear treatment can be performed with a mixed gas of CF ₄ and O ₂ (tetrafluoromethane + oxygen), but other inert gas such as Ar (argon) can also be used, so-called dry treatment. Instead, it may be wet desmear treatment using a chemical solution.

  After forming the via hole 4, as shown in FIG. 2D, a via 33 is formed by filling the formed via hole 4 with a conductive paste by screen printing or the like (step S106 in FIG. 3), and the second adhesion A single-sided substrate 30a made of the resin base material 31 provided with the layer 22a is manufactured.

  Next, a manufacturing process of the double-sided substrates 10a and 10b will be described with reference to FIGS. First, a double-sided CCL having a conductor layer formed on both sides of the resin substrate 11 is prepared (step S200 in FIG. 5), a via hole 2 is formed at a predetermined location (step S202 in FIG. 5), and plasma desmear processing is performed. .

  Next, the entire surface of the resin base material 11 is plated (step S204 in FIG. 5) to form a plating layer on the conductor layer and in the via hole 2. Then, as shown in FIG. 12 and vias 13 are formed (step S206 in FIG. 5).

  Thereafter, as shown in FIG. 4 (b), the resin base material 11 in the part in which the electronic components 90 to 92 are incorporated is removed by irradiating the laser beam to form an opening 19 having a predetermined opening diameter. (Step S208 in FIG. 5), the double-sided boards 10a and 10b having the openings 19 in which the electronic components 90 to 92 are accommodated are manufactured.

  Next, the manufacturing process of the intermediate substrate 20 will be described with reference to FIGS.

  First, as shown to Fig.6 (a), an adhesive material is affixed on both surfaces of the resin base material 21, and the 1st contact bonding layer 22 is formed (step S300 of FIG. 7).

  Next, as shown in FIG. 6B, laser light is irradiated to form a via hole 3 penetrating the first adhesive layer 22 and the resin base material 21 at a predetermined location (step S302 in FIG. 7), and plasma Apply desmear treatment. Further, as shown in FIG. 6C, the via 23 is formed by filling the formed via hole 3 with a conductive paste (step S304 in FIG. 7), and the first adhesive layer 22 is provided on both surfaces. The intermediate substrate 20 made of the resin base material 21 is manufactured. Here, as described above, when the value of the parasitic resistance is varied by changing the diameter of the via 23, the diameter of the via 23 formed in steps S302 and S304 in FIG. 7 is changed.

  Thereafter, as shown in FIG. 6D, the electrodes 90a and 90b of the electronic component 90 are positioned below the vias 23 formed in the intermediate substrate 20 using an electronic component mounting machine (not shown). Similarly, the electrodes 91 a and 92 a of the electronic components 91 and 92 are aligned with the upper side of the via 23. Then, the electronic components 90 to 92 are temporarily bonded and mounted by heating at a temperature lower than the curing temperature of the conductive paste of the first adhesive layer 22 and the via 23 of the intermediate substrate 20 (step S306 in FIG. 7). . In this way, the intermediate substrate 20 on which the electronic components 90 to 92 are mounted is prepared. Further, instead of mounting the electronic components 90 to 92 on the intermediate substrate 20, the electronic component 90 may be mounted on the single-sided substrate 30b, or the electronic components 91 and 92 may be mounted on the single-sided substrate 30a.

  Finally, referring to FIGS. 8 and 9, the manufacturing process of batch lamination will be described. As shown in FIG. 8, the double-sided boards 10a and 10b, the single-sided boards 30a and 30b, and the intermediate board 20 produced as described above are connected to the electronic components 90 to 92 mounted on the intermediate board 20 and the double-sided boards 10a and 10b. The openings 19 are aligned, and the vias 33, the wirings 12, and the electrodes 91b and 92b of the electronic components 91 and 92 are aligned and positioned (step S400 in FIG. 9).

  When batch stacking is performed by thermocompression bonding, a component-embedded substrate having a five-layer structure as shown in FIG. 1 is obtained by applying heat and pressure in a reduced pressure atmosphere of 1 kPa or less using a vacuum press machine (step S402 in FIG. 9). 1 is produced. At the time of collective lamination, the conductive paste filled in the via holes 3 and 4 is cured simultaneously with the curing of the first and second adhesive layers 22 and 22a and the resin base materials 11, 21, and 31 in the openings 19. And alloying takes place.

  Therefore, an alloy layer of an intermetallic compound is formed between the vias 23 and 33 made of a conductive paste and the wirings 12 and 32 and the electrodes 90a, 90b, 91a, 91b, 92a, and 92b. As a result, the mechanical strength of the connecting portion between the vias 23 and 33 and the wirings 12 and 32 can be increased, and the connection reliability can be increased by reliably connecting. Here, as described above, the metal used for any terminal of the electronic components 90 to 92 may be a metal that forms a strong alloy with the material of the vias 23 and 33 to be connected. Moreover, the lamination process of each board | substrate 10a and 10b, 20, 30a, and 30b is not limited to the batch lamination by thermocompression bonding.

  FIG. 10 is a cross-sectional view showing a component built-in substrate according to a second embodiment of the present invention. Compared with the component built-in substrate 1 according to the first embodiment, the component built-in substrate 1 </ b> A according to the second embodiment includes an electronic component 93 instead of the electronic component 90 and an electronic component 94 instead of the electronic component 91. Is different. The electronic components 93 and 94 are both semiconductor chips, and are arranged so that the electrode formation surface faces the intermediate substrate 20. The electrodes 93 a and 93 b are respectively connected to the electrodes 94 a and 93 via the vias 23 of the intermediate substrate 20. 94b.

  Also in the second embodiment, the value of the parasitic resistance required for each of the plurality of vias 23 may be different. That is, when one via 23 is for control signal communication and another via 23 is for high-frequency signal communication, the control signal communication via 23 is higher than the high-frequency signal communication via 23. The parasitic resistance may be increased by relatively reducing the diameter, and the via 23 for high-frequency signal communication is reversed. Thereby, the value of the parasitic resistance can be varied.

  The embodiment described above is described for facilitating the understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

DESCRIPTION OF SYMBOLS 1, 1A ... Component built-in board 10a, 10b ... Double-sided board 20 ... Intermediate board 30a, 30b ... Single-sided board 11, 21, 31 ... Resin base material 12, 32 ... Wiring 2 3, 4, ... Via holes 13, 23, 33 ... Vias 22, 22a ... Adhesive layer 19 ... Openings 90, 91, 92, 93, 94 ... Electronic components 90a, 90b, 91a 91b, 92a, 92b,
93a, 93b, 93c, 94a, 94b ... electrodes

Claims (12)

In the component-embedded substrate having a multilayer structure in which the first electronic component and the second electronic component are built in the stacking direction,
A first wiring layer formed on both surfaces of the first insulating layer; a first interlayer conductive layer penetrating the first insulating layer and connected to the first wiring layer; and the first electronic component or the second electronic component. A double-sided substrate having an accommodated opening;
A first adhesive layer provided on both surfaces of the second insulating layer, and an intermediate substrate having a second interlayer conductive layer penetrating the second insulating layer together with the first adhesive layer;
The double-sided substrates are respectively disposed on the upper layer and the lower layer of the intermediate substrate,
The first electrode of the electronic component positioned in the upper layer of the intermediate substrate, the connected second direct and upper interlayer conductive layer, the second electronic component electrode located on the lower layer, the second interlayer conductive layer a substrate having built-in components, characterized in that it is continued lower and straight Sesse'. Either one of the first electronic component or the second electronic component is a semiconductor chip in which an electrode is formed only on one side,
2. The component built-in substrate according to claim 1, wherein the semiconductor chip has an electrode facing the intermediate substrate. A second wiring layer formed on one surface of the third insulating layer, a second adhesive layer provided on the other surface, and the second adhesive layer penetrating through the third insulating layer and connected to the second wiring layer A single-sided substrate having a third interlayer conductive layer formed,
Either one of the first electronic component or the second electronic component is an electronic component having electrodes formed on both sides,
The third interlayer conductive layer of the single-sided substrate is connected to an electrode on the opposite side of the intermediate substrate in the electronic component having electrodes formed on the both sides,
3. The component-embedded substrate according to claim 1, wherein the single-sided substrate and the intermediate substrate are laminated with a double-sided substrate in which an electronic component having electrodes formed on both sides is accommodated in an opening. . The first electronic component is a first semiconductor chip in which an electrode is formed only on one side, and the second electronic component is a second semiconductor chip in which an electrode is formed only on one side,
2. The component-embedded substrate according to claim 1, wherein each of the first semiconductor chip and the second semiconductor chip has an electrode facing the intermediate substrate. A second wiring layer formed on one surface of the third insulating layer, a second adhesive layer provided on the other surface, and the second adhesive layer penetrating through the third insulating layer and connected to the second wiring layer A single-sided substrate having a third interlayer conductive layer formed,
Wherein the one opening any of the double-sided substrate disposed on a straight upper or straight lower intermediate substrate, the third electronic component having electrodes formed on both sides is accommodated,
The third interlayer conductive layer of the single-sided substrate is connected to an electrode on a surface opposite to the intermediate substrate in the third electronic component,
5. The component-embedded substrate according to claim 1, wherein the single-sided substrate and the intermediate substrate are stacked with a double-sided substrate in which the third electronic component is accommodated in an opening. 6. The component-embedded substrate according to claim 1, wherein the component-embedded substrate has a plurality of the second interlayer conductive layers, and the first second interlayer conductive layer and the second second interlayer conductive layer have different diameters. In the manufacturing method of the component-embedded substrate having a multilayer structure in which the first electronic component and the second electronic component are embedded in the stacking direction,
A first wiring layer is formed on both surfaces of the first insulating layer, and a first interlayer conductive layer that penetrates the first insulating layer and is connected to the first wiring layer is formed, and the first electronic component or the first insulating layer is formed. Forming a double-sided substrate by forming an opening for accommodating two electronic components;
Providing a first adhesive layer on both sides of the second insulating layer, and forming a second interlayer conductive layer penetrating the second insulating layer together with the first adhesive layer to produce an intermediate substrate;
The first electronic component is mounted so that the electrode is directly connected to the lower side of the second interlayer conductive layer, and the second electronic component is mounted on the upper side of the second interlayer conductive layer. A process of aligning and mounting so as to be directly connected to,
With double-sided substrate are arranged in a state where the first electronic component and the first electronic component on the upper layer of the second said intermediate substrate on which electronic parts are mounted is accommodated in the opening, the lower layer of the intermediate substrate method for manufacturing a component-embedded substrate, wherein <br/> said second electronic component and a step of laminating such that double-sided substrate is placed in a state of being accommodated in the opening. Either one of the first electronic component or the second electronic component is a semiconductor chip in which an electrode is formed only on one side,
8. The method of manufacturing a component-embedded substrate according to claim 7, wherein the semiconductor chip is disposed so that an electrode faces the intermediate substrate. A second wiring layer is formed on one surface of the third insulating layer, a second adhesive layer is provided on the other surface, and the second insulating layer is connected to the second wiring layer through the third insulating layer together with the second adhesive layer. Forming a single-sided substrate by forming a third interlayer conductive layer,
Either one of the first electronic component or the second electronic component is an electronic component having electrodes formed on both sides,
In the laminating step, the third interlayer conductive layer of the single-sided substrate is connected to an electrode on a surface opposite to the intermediate substrate in the electronic component having electrodes formed on both sides, and the single-sided substrate and the single-sided substrate 9. The method of manufacturing a component built-in substrate according to claim 7, wherein the intermediate substrate is laminated so as to sandwich the double-sided substrate in which the electronic component having electrodes formed on both sides is accommodated in the opening. The first electronic component is a first semiconductor chip in which an electrode is formed only on one side, and the second electronic component is a second semiconductor chip in which an electrode is formed only on one side,
8. The method of manufacturing a component-embedded board according to claim 7, wherein the first semiconductor chip and the second semiconductor chip are arranged so that each electrode faces the intermediate board. A second wiring layer is formed on one surface of the third insulating layer, a second adhesive layer is provided on the other surface, and the second insulating layer is connected to the second wiring layer through the third insulating layer together with the second adhesive layer. Forming a single-sided substrate by forming a third interlayer conductive layer,
Wherein the one opening any of the double-sided substrate disposed on a straight upper or straight lower intermediate substrate, the third electronic component having electrodes formed on both sides is accommodated,
In the laminating step, the third interlayer conductive layer of the single-sided substrate is connected to an electrode on the surface opposite to the intermediate substrate in the third electronic component, and the single-sided substrate and the intermediate substrate are 11. The method of manufacturing a component-embedded substrate according to claim 7, wherein the third electronic component is laminated so as to sandwich a double-sided substrate accommodated in the opening. 12. The component-embedded substrate according to claim 7, wherein a plurality of the second interlayer conductive layers are provided, and the first second interlayer conductive layer and the second second interlayer conductive layer have different diameters. Method.

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